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    CY7C106B Search Results

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    CY7C106B Price and Stock

    Rochester Electronics LLC CY7C106B-25VC

    IC SRAM 1MBIT PARALLEL 28SOJ
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    DigiKey CY7C106B-25VC Bulk 5,768 131
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    Rochester Electronics LLC CY7C106B-25VCT

    IC SRAM 1MBIT PARALLEL 28SOJ
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    DigiKey CY7C106B-25VCT Bulk 4,500 258
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    Rochester Electronics LLC CY7C106BN-15VC

    IC SRAM 1MBIT PARALLEL 28SOJ
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    DigiKey CY7C106BN-15VC Bulk 2,340 155
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    Rochester Electronics LLC CY7C106B-20VCT

    IC SRAM 1MBIT PARALLEL 28SOJ
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    DigiKey CY7C106B-20VCT Bulk 750 310
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    Rochester Electronics LLC CY7C106B-20VC

    IC SRAM 1MBIT PARALLEL 28SOJ
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    DigiKey CY7C106B-20VC Bulk 156
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    Find more CY7C106B price and stock on Findchips.com

    CY7C106B Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY7C106B Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C106B-12VC Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C106B-15VC Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C106B-15VI Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C106B-20VC Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C106B-20VI Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C106B-25VC Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C106B-25VI Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C106B-35VC Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C106B-35VI Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C106BN Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C106BN-15VC Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C106BN-15VCT Cypress Semiconductor 256K x 4 Static RAM; Density: 1 Mb; Organization: 256Kb x 4; Vcc (V): 4.5 to 5.5 V; Original PDF
    CY7C106BN-1XW14 Cypress Semiconductor 256K x 4 Static RAM; Density: 1 Mb; Organization: 256Kb x 4; Vcc (V): 4.5 to 5.5 V; Original PDF
    CY7C106BN-20VC Cypress Semiconductor 256K x 4 Static RAM Original PDF

    CY7C106B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C106B4

    Abstract: C106B CY7C1006B CY7C106B c106b1 equivalent
    Text: 006B CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.


    Original     		PDF CY7C106B CY7C1006B CY7C106B, CY7C1006B C106B4 C106B CY7C106B c106b1 equivalent

    CY7C1006D

    Abstract: CY7C106D CY7C106D-10VXI 7C106D
    Text: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA


    Original     		PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C106D CY7C1006D 83MHz, 66MHz 40MHz 100MHz, CY7C106D-10VXI 7C106D

    Untitled

    Abstract: No abstract text available
    Text: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA


    Original     		PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C106D CY7C1006D

    C106B

    Abstract: CY7C1006B CY7C106B 7C106B-12
    Text: CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. • High speed


    Original     		PDF CY7C106B CY7C1006B C106B CY7C1006B CY7C106B 7C106B-12

    C106B2

    Abstract: c106b1 equivalent C106B C106B4 C106B3 C106B TO-2
    Text: 1CY7C1006B CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.


    Original     		PDF 1CY7C1006B CY7C106B CY7C1006B CY7C106B/CY7C1006B C106B2 c106b1 equivalent C106B C106B4 C106B3 C106B TO-2

    1709 013

    Abstract: CY7C1006D CY7C106D CY7C106D-10VXI
    Text: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA


    Original     		PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C106D CY7C1006D 83MHz, 66MHz 40MHz 100MHz, 1709 013 CY7C106D-10VXI

    Untitled

    Abstract: No abstract text available
    Text: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA


    Original     		PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C106D CY7C1006D

    C106B

    Abstract: CY7C1006B CY7C106B CY7C1006B-15VC c106b1 equivalent
    Text: 1CY7C1006B CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.


    Original     		PDF 1CY7C1006B CY7C106B CY7C1006B CY7C106B, CY7C1006B C106B CY7C106B CY7C1006B-15VC c106b1 equivalent

    CY7C1006BN

    Abstract: CY7C106BN
    Text: CY7C106BN CY7C1006BN 256K x 4 Static RAM Features Functional Description The CY7C106BN and CY7C1006BN are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , an active LOW Output Enable (OE), and


    Original     		PDF CY7C106BN CY7C1006BN CY7C106BN CY7C1006BN CY7C106BN/CY7C1006BN

    Untitled

    Abstract: No abstract text available
    Text: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 60 mA @ 10 ns • Low CMOS standby power • • • •


    Original     		PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B 28-pin 400-Mil CY7C1006D 300-Mil

    C106B1

    Abstract: C106B CY7C1006B CY7C106B
    Text: 1CY7C1006B CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.


    Original     		PDF 1CY7C1006B CY7C106B CY7C1006B CY7C106B, CY7C1006B C106B1 C106B CY7C106B

    Untitled

    Abstract: No abstract text available
    Text: CY7C106D CY7C1006D 1-Mbit 256 K x 4 Static RAM 1-Mbit (256 K × 4) Static RAM Features • Pin- and function-compatible with CY7C106B/CY7C1006B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA @ 10 ns ■ Low CMOS standby power ❐ ISB2 = 3.0 mA


    Original     		PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C106D 28-pin 400-Mil CY7C1006D 300-Mil

    Untitled

    Abstract: No abstract text available
    Text: CY7C106D CY7C1006D 1-Mbit 256 K x 4 Static RAM 1-Mbit (256 K × 4) Static RAM Features • Pin- and function-compatible with CY7C106B/CY7C1006B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA @ 10 ns ■ Low CMOS standby power ❐ ISB2 = 3.0 mA


    Original     		PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C106D 28-pin 400-Mil CY7C1006D 300-Mil

    1709 013

    Abstract: CY7C1006BN CY7C106BN
    Text: CY7C106BN CY7C1006BN 256K x 4 Static RAM Features Functional Description The CY7C106BN and CY7C1006BN are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , an active LOW Output Enable (OE), and


    Original     		PDF CY7C106BN CY7C1006BN CY7C106BN CY7C1006BN CY7C106BN/CY7C1006BN 1709 013

    Untitled

    Abstract: No abstract text available
    Text: CY7C106BN 256K x 4 Static RAM Features Functional Description The CY7C106BN is a high performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , an active LOW Output Enable (OE), and tristate drivers. These devices have an


    Original     		PDF CY7C106BN CY7C106BN

    vhdl code for dice game

    Abstract: Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet
    Text: Product Selector Guide Communications Products Description Pins Part Number Freq. Range Mbps ICC (mA) Packages* 3.3V SONET/SDH PMD Transceiver 2.5V SiGe Low Power SONET/SDH Transceiver SONET/SDH Transceiver w/ 100K Logic 2.5 G-Link w/ 100K Logic OC-48 Packet Over SONET (POS) Framer


    Original     		PDF OC-48 CYS25G0101DX CYS25G0102 CYS25G01K100 CYP25G01K100 CY7C9536 CY7C955 CY7B952 CY7B951 10BASE vhdl code for dice game Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet

    K6X0808C1D-BF55

    Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
    Text: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI


    Original     		PDF CY7C128A-15VC CY7C128A-15SC CY7C167A-15PC CY7C168A-15PC 24PIN 20PIN 300MIL K6X0808C1D-BF55 HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L

    Untitled

    Abstract: No abstract text available
    Text: CY7C106D CY7C1006D PRELIMINARY 1-Mbit 256K x 4 Static RAM Functional Description[1] Features The CY7C106D and CY7C1006D are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state


    Original     		PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C1006D CY7C106D,