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    CY7B166 Search Results

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    CY7B166 Price and Stock

    Cypress Semiconductor CY7B166-8VC

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics CY7B166-8VC 1,530
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    Cypress Semiconductor CY7B166-12VC

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    Bristol Electronics CY7B166-12VC 48
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    Component Electronics, Inc CY7B166-12VC 16
    • 1 $7.69
    • 10 $7.69
    • 100 $5.77
    • 1000 $5
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    Cypress Semiconductor CY7B166-12PC

    STANDARD SRAM, 16KX4, 12NS, BICMOS, PDIP24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components CY7B166-12PC 96
    • 1 $12
    • 10 $12
    • 100 $4.8
    • 1000 $4.8
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    Cypress Semiconductor CY7B166-10VC

    Static RAM, 16Kx4, 24 Pin, Plastic, SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components CY7B166-10VC 21
    • 1 $13.5
    • 10 $6.75
    • 100 $6.75
    • 1000 $6.75
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    Cypress Semiconductor CY7B166-9VC

    7B166-9VC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components CY7B166-9VC 7
    • 1 $15
    • 10 $7.5
    • 100 $7.5
    • 1000 $7.5
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    CY7B166 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY62256LL-PC

    Abstract: VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113
    Text: Cypress Semiconductor Product Reliability 1997 Published June, 1997 CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS SEMICONDUCTOR TOTAL QUALITY MANAGEMENT SYSTEM. 1 2.0 ELECTRICAL AVERAGE OUTGOING QUALITY. 2


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    PDF PALCE22V10-JC FLASH-FL22D CY62256LL-PC VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113

    CY27S03A

    Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
    Text: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability


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    PDF CY7C122 CY27S03A 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide

    CY7C9101

    Abstract: CY7C510 CY7C190 cy7c189 G30-88 CY7c910 EA 9394 cy3341 CY6116 cy7c901
    Text: fax id: 8511 Thermal Management Thermal Management and Component Reliability One of the key variables determining the long-term reliability of an integrated circuit is the junction temperature of the device during operation. Long-term reliability of the semiconductor chip degrades proportionally with increasing temperatures following an exponential function described by the


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    PDF

    Gunn Diode symbol

    Abstract: cy202 CY7C190 WSP-109BMP3 pal22V10D cy7b166 cy7c291 CY7C371 EV film cap calculation gunn diode datasheet
    Text: CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY APPENDIX A: FAILURE RATE CALCULATION Thermal Acceleration Factors Acceleration factors AF for thermal stresses (High Temperature Operating Life, Data Retention and High Temperature Steady State Life) are calculated from the Arrhenius equation.


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    PDF 62x10-5 Gunn Diode symbol cy202 CY7C190 WSP-109BMP3 pal22V10D cy7b166 cy7c291 CY7C371 EV film cap calculation gunn diode datasheet

    Untitled

    Abstract: No abstract text available
    Text: — =Z1- CY7B164 CY7B166 ^ CYPRESS SEMICONDUCTOR Features • Ultra high speed — U a = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output Enable ÖE feature (7B166) • TTL-compatible inputs and outputs


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    PDF CY7B164 CY7B166 7B166) Y7B164 CY7B166 166only.

    7B164-15

    Abstract: 910U
    Text: _ PRELIM INARY SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • BiCMOS for optimum speed/power • High speed - 10 ns t* T he CY7B164 and CY7B166 are high-performance BiCMOS static RAMs organized as 16,384 x 4 bits. These RAMs are devel­


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    PDF CY7B164 CY7B166 7B166) 7B166 8-A-00015-A 7B164-15 910U

    Untitled

    Abstract: No abstract text available
    Text: CY7B164 CY7B166 CYPRESS SEMICONDUCTOR 16K x 4 Static RAV RAM Features Functional Description • Ultra high speed — tAA = 8 ns T h e CY7B164 an d CY 7B166 a re highp erform ance BiC M O S static R A M s org a­ nized as 16,384 x 4 bits. Easy m em ory ex­


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    PDF CY7B164 CY7B166 7B166) 7B166--12LMB 7B166--15DMB 7B166--15LMB 7B166

    i6612

    Abstract: No abstract text available
    Text: CY7B164 CY7B166 r v p p r q q SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • BiCMOS for optimum speed/power T h e CY7B164 and CY7B166 are high-per­ form ance BiCM O S static R A M s organized as 16,384 x 4 bits. Easy m em ory expansion


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    PDF CY7B164 CY7B166 7B166) i6612

    CY7B166

    Abstract: CY7B164 7B164 CY7B166-12PC a13c 12LMB CY7B16 7B166 8J45
    Text: CY7B164 CY7B166 CYPRESS SEMICONDUCTOR 16K x 4 Static R/W RAM Features Functional Description • Ultra high speed — tAA = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output enable OE feature (7B166)


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    PDF CY7B164 CY7B166 7B166) 12LMB 28-Pin CY7B166â 15DMB 7B164 CY7B166-12PC a13c CY7B16 7B166 8J45

    Untitled

    Abstract: No abstract text available
    Text: CY7B164 CY7B166 CYPRESS SEMICONDUCTOR 16K x 4 Static R/W RAM Features Functional Description • Ultra high speed T h e CY 7B164 and CY 7B166 are highperfo rm an ce B iC M O S static R A M s orga­ nized as 16,384 x 4 bits. Easy m em ory ex­ pansion is provided by an active LO W


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    PDF CY7B164 CY7B166 7B166) 7B164 7B166 166--15DM 166--15LMB --00015--G

    Untitled

    Abstract: No abstract text available
    Text: = - CY7B164 CY7B166 ^ -16,384 x 4 Static RAV RAM ¿s CYPRESS SEMICONDUCTOR Features Functional Description • Ultra high speed — tAA = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output Enable OE feature (7B166)


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    PDF CY7B164 CY7B166 7B166) CY7B164 CY7B166 7B166onIy.

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


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    PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A