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Cypress Semiconductor CY7B164-15PC Part Number Only
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Quest Components	CY7B164-15PC		364			1 $9.9 10 $9.9 100 $4.29 1000 $3.96 10000 $3.96	Buy Now

CY7B164 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CY27S03A Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide Text: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability	Original	CY7C122 CY27S03A 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide	PDF
CY7C9101 Abstract: CY7C510 CY7C190 cy7c189 G30-88 CY7c910 EA 9394 cy3341 CY6116 cy7c901 Text: fax id: 8511 Thermal Management Thermal Management and Component Reliability One of the key variables determining the long-term reliability of an integrated circuit is the junction temperature of the device during operation. Long-term reliability of the semiconductor chip degrades proportionally with increasing temperatures following an exponential function described by the	Original		PDF
Untitled Abstract: No abstract text available Text: — =Z1- CY7B164 CY7B166 ^ CYPRESS SEMICONDUCTOR Features • Ultra high speed — U a = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output Enable ÖE feature (7B166) • TTL-compatible inputs and outputs	OCR Scan	CY7B164 CY7B166 7B166) Y7B164 CY7B166 166only.	PDF
7B164-15 Abstract: 910U Text: _ PRELIM INARY SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • BiCMOS for optimum speed/power • High speed - 10 ns t* T he CY7B164 and CY7B166 are high-performance BiCMOS static RAMs organized as 16,384 x 4 bits. These RAMs are devel	OCR Scan	CY7B164 CY7B166 7B166) 7B166 8-A-00015-A 7B164-15 910U	PDF
Untitled Abstract: No abstract text available Text: CY7B164 CY7B166 CYPRESS SEMICONDUCTOR 16K x 4 Static RAV RAM Features Functional Description • Ultra high speed — tAA = 8 ns T h e CY7B164 an d CY 7B166 a re highp erform ance BiC M O S static R A M s org a nized as 16,384 x 4 bits. Easy m em ory ex	OCR Scan	CY7B164 CY7B166 7B166) 7B166--12LMB 7B166--15DMB 7B166--15LMB 7B166	PDF
i6612 Abstract: No abstract text available Text: CY7B164 CY7B166 r v p p r q q SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • BiCMOS for optimum speed/power T h e CY7B164 and CY7B166 are high-per form ance BiCM O S static R A M s organized as 16,384 x 4 bits. Easy m em ory expansion	OCR Scan	CY7B164 CY7B166 7B166) i6612	PDF
CY7B166 Abstract: CY7B164 7B164 CY7B166-12PC a13c 12LMB CY7B16 7B166 8J45 Text: CY7B164 CY7B166 CYPRESS SEMICONDUCTOR 16K x 4 Static R/W RAM Features Functional Description • Ultra high speed — tAA = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output enable OE feature (7B166)	OCR Scan	CY7B164 CY7B166 7B166) 12LMB 28-Pin CY7B166â 15DMB 7B164 CY7B166-12PC a13c CY7B16 7B166 8J45	PDF
Untitled Abstract: No abstract text available Text: CY7B164 CY7B166 CYPRESS SEMICONDUCTOR 16K x 4 Static R/W RAM Features Functional Description • Ultra high speed T h e CY 7B164 and CY 7B166 are highperfo rm an ce B iC M O S static R A M s orga nized as 16,384 x 4 bits. Easy m em ory ex pansion is provided by an active LO W	OCR Scan	CY7B164 CY7B166 7B166) 7B164 7B166 166--15DM 166--15LMB --00015--G	PDF
Untitled Abstract: No abstract text available Text: = - CY7B164 CY7B166 ^ -16,384 x 4 Static RAV RAM ¿s CYPRESS SEMICONDUCTOR Features Functional Description • Ultra high speed — tAA = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output Enable OE feature (7B166)	OCR Scan	CY7B164 CY7B166 7B166) CY7B164 CY7B166 7B166onIy.	PDF
toshiba 32k*8 sram Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464 Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258	OCR Scan	KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464	PDF
41C1000 Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258	OCR Scan	41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A	PDF