CY62157EV30LL-45BVI
Abstract: CY62157EV
Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62157DV30 • Ultra-low standby power — Typical Standby current: 2 µA
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CY62157EV30
CY62157DV30
48-ball
48-pin
44-pin
CY62157EV30LL-45BVI
CY62157EV
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Untitled
Abstract: No abstract text available
Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE1
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CY62157EV30
CY62157DV30
48-ball
44-pin
48-pin
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AN1064
Abstract: CY62157DV30 CY62157EV30
Text: CY62157EV30 MoBL 8 Mbit 512K x 16 Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512K x 16 or 1M x 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40°C to +85°C
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CY62157EV30
CY62157DV30
AN1064
CY62157DV30
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CY62157
Abstract: CY62157EV30LL-45BVXI
Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode when
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CY62157EV30
CY62157DV30
48-ball
48-pin
44-pin
CY62157
CY62157EV30LL-45BVXI
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Untitled
Abstract: No abstract text available
Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges
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CY62157EV30
CY62157DV30
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Untitled
Abstract: No abstract text available
Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges
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CY62157EV30
CY62157DV30
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Untitled
Abstract: No abstract text available
Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges
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CY62157EV30
CY62157DV30
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CY62157EV30LL-45BVXI
Abstract: TSOP 48 thermal resistance
Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges
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CY62157EV30
I/O15)
CY62157EV30LL-45BVXI
TSOP 48 thermal resistance
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AN1064
Abstract: CY62157DV30 CY62157EV30 CY62157EV30LL-55ZXE CY62157EV30Ll-45zxa
Text: CY62157EV30 MoBL 8 Mbit 512K x 16 Static RAM Features • TSOP I Package Configurable as 512K x 16 or 1M x 8 SRAM ■ High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ❐ Automotive-E: –40°C to +125°C
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CY62157EV30
CY62157DV30
48-Ball
44-Pin
AN1064
CY62157DV30
CY62157EV30LL-55ZXE
CY62157EV30Ll-45zxa
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Untitled
Abstract: No abstract text available
Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges
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CY62157EV30
I/O15)
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CY62157EV30
Abstract: CY62157EV30LL AN1064 CY62157DV30 CY62157 220V DC TEMPERATURE CONTROL
Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62157DV30 • Ultra low standby power — Typical Standby current: 2 µA
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CY62157EV30
CY62157DV30
48-ball
44-pin
48-pin
CY62157EV30LL
AN1064
CY62157DV30
CY62157
220V DC TEMPERATURE CONTROL
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CY62157EV30 MoBL
Abstract: CY62157EV30LL-45ZSXI CY62157 AN1064 CY62157DV30 CY62157EV30 CY62157EV30LL DSA0025657
Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62157DV30 • Ultra low standby power — Typical Standby current: 2 µA
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CY62157EV30
CY62157DV30
48-ball
44-pin
48-pin
CY62157EV30 MoBL
CY62157EV30LL-45ZSXI
CY62157
AN1064
CY62157DV30
CY62157EV30LL
DSA0025657
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AN66311
Abstract: 0x0003 CY62148E CY62177EV30 CY62128E CY62128EV30 CY62136EV30 CY62136FV30 CY62137EV30 CY62137FV30
Text: Timing Recommendation for Byte Enables and Chip Enables in MoBL SRAMs AN66311 Author: Anuj Chakrapani Associated Project: No Associated Part Family: CY62126EV30, CY62126ESL, CY62128E, CY62128EV30, CY62136ESL, CY62136EV30, CY62136FV30, CY62137EV30, CY62137FV18, CY62137FV30, CY62138EV30,
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AN66311
CY62126EV30,
CY62126ESL,
CY62128E,
CY62128EV30,
CY62136ESL,
CY62136EV30,
CY62136FV30,
CY62137EV30,
CY62137FV18,
AN66311
0x0003
CY62148E
CY62177EV30
CY62128E
CY62128EV30
CY62136EV30
CY62136FV30
CY62137EV30
CY62137FV30
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CY62157EV30
Abstract: CY62157EV30 MoBL CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI
Text: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM Functional Description [2] Features • Very high speed: 45 ns The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current.
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CY62158EV30
1024K
CY62157EV30
CY62157EV30 MoBL
CY62158DV30
CY62158EV30LL
CY62158EV30LL-45BVXI
CY62158EV30LL-45ZSXI
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CY62157EV
Abstract: No abstract text available
Text: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM Functional Description[2] Features • Very high speed: 45 ns The CY62158EV30 is a high-performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.
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CY62158EV30
1024K
CY62158DV30
48-ball
44-pin
48-pin
CY62157EV30
CY62157EV
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CY62126EV30
Abstract: CY62136EV30 CY62136FV30 CY62137EV30 CY62137FV18 CY62137FV30 CY62146E CY62146EV30 CY62147EV30 CY62157EV30
Text: Recommended Usage of Byte Enables in Standby Mode for 90 nm x16 MoBL SRAMs AN13842 Author: Anuj Chakrapani Associated Project: No Associated Part Family: 90 nm x16 MoBL® SRAMs Software Version: None Associated Application Notes: None Application Note Abstract
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AN13842
AN13842.
CY62126EV30)
CY62136EV30,
CY62137EV30,
CY62136FV30,
CY62137FV30,
CY62137FV18)
CY62146E,
CY62146EV30,
CY62126EV30
CY62136EV30
CY62136FV30
CY62137EV30
CY62137FV18
CY62137FV30
CY62146E
CY62146EV30
CY62147EV30
CY62157EV30
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CY62157EV30
Abstract: 90 nm CMOS CY62147EV18 CY62147EV30 CY62126EV30 CY62136EV30 CY62136FV30 CY62137EV30 CY62137FV18 CY62137FV30
Text: Clarification on Byte Enable Operation in Standby Mode for 90 nm x16 MoBL SRAMs AN13842 Author: Anuj Chakrapani Associated Project: No Associated Part Family: 90 nm x16 MoBL SRAMs GET FREE SAMPLES HERE Software Version: None Associated Application Notes: None
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AN13842
CY62126EV30)
CY62136EV30,
CY62137EV30,
CY62136FV30,
CY62137FV30,
CY62137FV18)
CY62146E,
CY62146EV30,
CY62147EV30,
CY62157EV30
90 nm CMOS
CY62147EV18
CY62147EV30
CY62126EV30
CY62136EV30
CY62136FV30
CY62137EV30
CY62137FV18
CY62137FV30
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Untitled
Abstract: No abstract text available
Text: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM 8-Mbit (1024K x 8) Static RAM Features Functional Description [2] • Very high speed: 45 ns ❐ Wide voltage range: 2.20V–3.60V ■ Pin compatible with CY62158DV30 ■ Ultra low standby power ❐ Typical standby current: 2 A
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CY62158EV30
1024K
CY62158DV30
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7688 memory chip
Abstract: CY62157EV30 CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI
Text: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM 8-Mbit (1024K x 8) Static RAM Features Functional Description [2] • Very high speed: 45 ns ❐ Wide voltage range: 2.20V–3.60V ■ Pin compatible with CY62158DV30 ■ Ultra low standby power ❐ Typical standby current: 2 A
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CY62158EV30
1024K
CY62158DV30
7688 memory chip
CY62157EV30
CY62158DV30
CY62158EV30LL
CY62158EV30LL-45BVXI
CY62158EV30LL-45ZSXI
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48-TSOPI
Abstract: No abstract text available
Text: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM Functional Description[1] Features • Very high speed: 45 ns The CY62158EV30 is a high-performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.
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CY62158EV30
1024K
CY62158DV30
48-ball
48-pin
48-TSOPI
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Untitled
Abstract: No abstract text available
Text: CY62158EV30 MoBL 8-Mbit 1024 K x 8 Static RAM 8-Mbit (1024 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62158DV30 ■ Ultra low standby power ❐ Typical standby current: 2 A
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PDF
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CY62158EV30
1024K
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Untitled
Abstract: No abstract text available
Text: CY62158EV30 MoBL 8-Mbit 1024 K x 8 Static RAM 8-Mbit (1024 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62158DV30 ■ Ultra low standby power ❐ Typical standby current: 2 A
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PDF
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CY62158EV30
CY62158DV30
48-ball
44-pin
1024K
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Untitled
Abstract: No abstract text available
Text: CY62158EV30 MoBL 8-Mbit 1024 K x 8 Static RAM 8-Mbit (1024 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V–3.60 V The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features
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CY62158EV30
1024K
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CY62158EV30LL-45ZSXI
Abstract: No abstract text available
Text: CY62158EV30 MoBL 8-Mbit 1024 K x 8 Static RAM 8-Mbit (1024 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62158DV30 ■ Ultra low standby power ❐ Typical standby current: 2 A
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CY62158EV30
1024K
CY62158EV30LL-45ZSXI
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