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    CY62146 Price and Stock

    Flip Electronics CY62146EV30LL-45ZSXI

    IC SRAM 4MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62146EV30LL-45ZSXI Tray 14,258 100
    • 1 -
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    • 100 $5.47
    • 1000 $5.47
    • 10000 $5.47
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    Flip Electronics CY62146GN30-45BVXI

    IC SRAM 4MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62146GN30-45BVXI Tray 6,141 40
    • 1 -
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    • 100 $16.54
    • 1000 $16.54
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    Flip Electronics CY62146G-45ZSXA

    IC SRAM 4MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62146G-45ZSXA Tray 5,166 150
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    • 1000 $5
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    Flip Electronics CY62146ELL-45ZSXAT

    IC SRAM 4MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62146ELL-45ZSXAT Reel 4,000 200
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    • 100 -
    • 1000 $6.2
    • 10000 $6.2
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    Flip Electronics CY62146G30-45BVXI

    IC SRAM 4MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62146G30-45BVXI Tray 3,833 150
    • 1 -
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    • 1000 $4.65
    • 10000 $4.65
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    Find more CY62146 price and stock on Findchips.com

    CY62146 Datasheets (96)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY62146BV18LL-70BAI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146CV18 Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146CV18LL-55BAI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146CV18LL-55BVI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146CV18LL-70BAI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146CV18LL-70BVI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146CV30 Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62146CV30LL-55BAI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62146CV30LL-55BAI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146CV30LL-55BVI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62146CV30LL-55BVI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146CV30LL-70BAI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62146CV30LL-70BAI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146CV30LL-70BVI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62146CV30LL-70BVI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146DV30 Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62146DV30L Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62146DV30L-55BVI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62146DV30L-55BVXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62146DV30L-55ZSXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF

    CY62146 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    00107

    Abstract: No abstract text available
    Text: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when


    Original     		PDF CY62146E 44-pin 00107

    Untitled

    Abstract: No abstract text available
    Text: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH).


    Original     		PDF CY62146E 44-pin I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features cations such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when


    Original     		PDF CY62146E 44-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when


    Original     		PDF CY62146EV30 CY62146DV30 48-ball 44-pin 48-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62146E MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE


    Original     		PDF CY62146E I/O15)

    925501

    Abstract: No abstract text available
    Text: CY62146EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular


    Original     		PDF CY62146EV30 CY62146DV30 48-ball 44-pin 925501

    Untitled

    Abstract: No abstract text available
    Text: CY62146ESL MoBL 4-Mbit 256K x 16 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when


    Original     		PDF CY62146ESL 44-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down


    Original     		PDF CY62146EV30 CY62146DV30 48-ball 44-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down


    Original     		PDF CY62146EV30 CY62146DV30 48-ball 44-pin 727-CY46EV30LL45ZSXI CY62146EV30LL-45ZSXI

    Untitled

    Abstract: No abstract text available
    Text: 47V CY62146BV18 MoBL2TM 256K x 16 Static RAM Features • Low voltage range: — CY62146BV18: 1.65V–1.95V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected


    Original     		PDF CY62146BV18 CY62146BV18:

    CY62146VLL-70ZI

    Abstract: CY62146V
    Text: 1*CY62146V MoBL CY62146V MoBL™ 256K x 16 Static RAM Features • Low voltage range: — CY62146V: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected


    Original     		PDF CY62146V CY62146V CY62146V: CY62146VLL-70ZI

    CY62146EV30LL-45ZSXI

    Abstract: CY62146EV30 CY62146EV30LL CY62146DV30
    Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through


    Original     		PDF CY62146EV30 CY62146DV30 48-ball CY62146EV30LL-45ZSXI CY62146EV30LL CY62146DV30

    CY62146V18

    Abstract: No abstract text available
    Text: CY62146V18 MoBL2 256K x 16 Static RAM Features • Low voltage range: — CY62146V18: 1.75V–1.95V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected


    Original     		PDF CY62146V18 CY62146V18:

    Untitled

    Abstract: No abstract text available
    Text: 1*CY62147V MoBL CY62146CV25/30/33 ADVANCE INFORMATION MoBLTM 256K x 16 Static RAM Features through I/O15 are placed in a high-impedance state when: deselected CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write


    Original     		PDF CY62147V CY62146CV25/30/33 CY62146CV25: CY62146CV30: CY62146CV33: I/O15)

    VDR 0047

    Abstract: AN1064 CY62146E
    Text: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Deselected (CE HIGH)


    Original     		PDF CY62146E VDR 0047 AN1064

    CY62146V

    Abstract: CY62146VLL
    Text: CY62146V MoBL 4M 256K x 16 Static RAM Features • • • • • • • Wide voltage range: 2.7V–3.6V Ultra-low active, standby power Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected


    Original     		PDF CY62146V 44-Pin CY62146CV30. CY62146VLL

    CY62146CV18

    Abstract: No abstract text available
    Text: CY62146CV18 MoBL2 256K x 16 Static RAM Features • High Speed — 55 ns and 70 ns availability • Low voltage range: — 1.65V–1.95V • Pin Compatible with CY62146BV18 • Ultra-low active power — Typical Active Current: 0.5 mA @ f = 1 MHz • •


    Original     		PDF CY62146CV18 CY62146BV18

    CY62146CV30

    Abstract: CY62146DV30 CY62146DV30L
    Text: CY62146DV30 4-Mbit 256K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH). The input/output pins (I/O0 through


    Original     		PDF CY62146DV30 I/O15) CY62146CV30 CY62146DV30 45-ns 44-lead CY62146CV30 CY62146DV30L

    CY62146CV18

    Abstract: No abstract text available
    Text: CY62146CV18 MoBL2 256K x 16 Static RAM Features • High Speed — 55 ns and 70 ns availability • Low voltage range: — 1.65V–1.95V • Pin Compatible with CY62146BV18 • Ultra-low active power — Typical Active Current: 0.5 mA @ f = 1 MHz • •


    Original     		PDF CY62146CV18 CY62146BV18

    CY62146EV30LL-45ZSXI

    Abstract: CY62146DV30 CY62146EV30 CY62146EV30LL 925501
    Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through


    Original     		PDF CY62146EV30 CY62146DV30 48-ball CY62146EV30LL-45ZSXI CY62146DV30 CY62146EV30LL 925501

    CY62146E-45LL

    Abstract: CY62146
    Text: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 45 ns


    Original     		PDF CY62146E 44-pin CY62146E-45LL CY62146

    46321

    Abstract: No abstract text available
    Text: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Deselected (CE HIGH)


    Original     		PDF CY62146E 44-pin 46321

    Untitled

    Abstract: No abstract text available
    Text: A D V A N C E D CY62146V MoBL TM IN F O R M A T IO N 2 5 6 K x 16 Static RAM disabled BHE, BLE HIGH , or during a write operation (CE LOW, and WE LOW). Features • Low voltage range: -1 .8 V - 3 .3 V • • • • • Ultra low active, standby power Easy memory expansion with CE and OE features


    OCR Scan     		PDF CY62146V

    Untitled

    Abstract: No abstract text available
    Text: V CYPRESS ADVANCED INFORMATION CY62146V MoBL T M 256K x 16 Static RAM disabled B H E , BLE HIG H , o r during a w rite op era tion (CE LOW, and W E LOW ). Features • Low vo ltag e range: -1 .8 V -3 .6 V • U ltra-lo w active, s ta n d b y p o w er • Easy m e m o ry e x p a n sio n w ith C E and O E fe a tu re s


    OCR Scan     		PDF CY62146V