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    CY10E422 Price and Stock

    Rochester Electronics LLC CY10E422L-7DC

    IC SRAM 1KBIT PARALLEL 24SBDIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY10E422L-7DC Bulk 4,972 18
    • 1 -
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    • 100 $17.19
    • 1000 $17.19
    • 10000 $17.19
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    Rochester Electronics LLC CY10E422L-7KCQ

    IC SRAM 1KBIT PARALLEL 24CFLATPK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY10E422L-7KCQ Bulk 460 27
    • 1 -
    • 10 -
    • 100 $11.38
    • 1000 $11.38
    • 10000 $11.38
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    Rochester Electronics LLC CY10E422-7DC

    IC SRAM 1KBIT PARALLEL 24SBDIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY10E422-7DC Bulk 35
    • 1 -
    • 10 -
    • 100 $8.6
    • 1000 $8.6
    • 10000 $8.6
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    Rochester Electronics LLC CY10E422L-7JCQ

    IC SRAM 1KBIT PARALLEL 28PLCC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY10E422L-7JCQ Bulk 27
    • 1 -
    • 10 -
    • 100 $11.38
    • 1000 $11.38
    • 10000 $11.38
    		Buy Now

    Cypress Semiconductor CY10E422L-5JC

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    Bristol Electronics CY10E422L-5JC 2
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    Quest Components CY10E422L-5JC 105
    • 1 $19.5
    • 10 $19.5
    • 100 $18
    • 1000 $18
    • 10000 $18
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    CY10E422 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY62256LL-PC

    Abstract: VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113
    Text: Cypress Semiconductor Product Reliability 1997 Published June, 1997 CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS SEMICONDUCTOR TOTAL QUALITY MANAGEMENT SYSTEM. 1 2.0 ELECTRICAL AVERAGE OUTGOING QUALITY. 2


    Original     		PDF PALCE22V10-JC FLASH-FL22D CY62256LL-PC VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113

    CY27S03A

    Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
    Text: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability


    Original     		PDF CY7C122 CY27S03A 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide

    CY7C9101

    Abstract: CY7C510 CY7C190 cy7c189 G30-88 CY7c910 EA 9394 cy3341 CY6116 cy7c901
    Text: fax id: 8511 Thermal Management Thermal Management and Component Reliability One of the key variables determining the long-term reliability of an integrated circuit is the junction temperature of the device during operation. Long-term reliability of the semiconductor chip degrades proportionally with increasing temperatures following an exponential function described by the


    Original     		PDF

    Gunn Diode symbol

    Abstract: cy202 CY7C190 WSP-109BMP3 pal22V10D cy7b166 cy7c291 CY7C371 EV film cap calculation gunn diode datasheet
    Text: CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY APPENDIX A: FAILURE RATE CALCULATION Thermal Acceleration Factors Acceleration factors AF for thermal stresses (High Temperature Operating Life, Data Retention and High Temperature Steady State Life) are calculated from the Arrhenius equation.


    Original     		PDF 62x10-5 Gunn Diode symbol cy202 CY7C190 WSP-109BMP3 pal22V10D cy7b166 cy7c291 CY7C371 EV film cap calculation gunn diode datasheet

    Untitled

    Abstract: No abstract text available
    Text: ^ CY10E422 CY100E422 » ss f^YPPP’^c; • 256 x 4-bit organization • Ultra high speed/standard power — tAA = 3.5 ns — U : e = 220 niA • Low-power version — tAA = 5 ns — I e e " 150 inA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version


    OCR Scan     		PDF CY10E422 CY100E422 10KH/10K- 100K-compatible 10K/10KH CY10E422L-7LC CY10E422Lâ CY100E422â CY100E422Lâ

    TR10E

    Abstract: CY100E422L5DC C4221
    Text: CY10E422 _CY100E422 SEMCONDtCTOR • Open emitter output for ease of memory expansion Features • 256 x 4-bit organization • Industry-standard pinout • Ultra high speed/standard power — tA A = 3 ns, tA B S = 2 ns — IEE = 220 mA


    OCR Scan     		PDF CY10E422 CY100E422 10KH/10K 10K/10KH 100Kcompatible. CY100E422-31X' CYI00E422- CY100E422-3YC CY100E422-5YC TR10E CY100E422L5DC C4221

    Untitled

    Abstract: No abstract text available
    Text: CY10E422 CY100E422 i s ^ Y p p p c ;< ^ • ■ ■ ^ s \ # f SEMICONDUCTOR Features • Open em itter output for ease of memory expansion • Ultra high speed/standard power — tAA = 3.5 ns • Industry-standard pinout — Iee = 220 mA Functional Description


    OCR Scan     		PDF CY10E422 CY100E422 10KH/10K- 10K/10KH 10E422L--7LC 10E422L--7KM 100E422--3 100E422--5D

    DIC20

    Abstract: CY10E422L-5DMB
    Text: CY10E422 S i - ~ CY1 = SL- SEMICONDUCTOR Features 256 x 4 ECL Static RAM • On-chip voltage compensation for improved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout • 256 x 4-bit organization • Ultra high speed/standard power


    OCR Scan     		PDF CY10E422 CY10E422L-- 10E422L-- DIC20 CY10E422L-5DMB

    CY10E422L-5KMB

    Abstract: CY10E422L-5DMB CY100E422L5DC CY10E422L7DC CY10E422 CY100E422 CY10E422L5JC CY10E422L-5DC CY100E42235KC 10e422
    Text: _ CY10E422 CY100E422 "-• 256 x 4 ECL Static RAM CYPRESS SEMICONDUCTOR Features — t^A ~ 3*5 ns • On-ehip voltage compensation for improved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout — I e e = 220 mA


    OCR Scan     		PDF CY10E422 CY100E422 10KH/10K- 10K/10KH CY100E422â 24-Lead 400-Mil) CY10E422L-5KMB CY10E422L-5DMB CY100E422L5DC CY10E422L7DC CY10E422L5JC CY10E422L-5DC CY100E42235KC 10e422

    Untitled

    Abstract: No abstract text available
    Text: CY10E422 CY100E422 : J P ' CYPRESS — — SEMICONDUCTOR 256 x 4 ECL Static RAM • Open em itter output for ease of memory expansion Features • 256 x 4 -b it organization • • Ultra high speed/standard power Industry-standard pinout F unctional D escrip tion


    OCR Scan     		PDF CY10E422 CY100E422 10E422L-7K 10E422L-7D 10E422L-7YM 100E422-3LC CY100E422-3Y CY100E422-3K 100E422-5LC

    Untitled

    Abstract: No abstract text available
    Text: ^ ^' 3 w ' SEm!cONDUCTOR 256 x 4 ECL Static RAM The four independent active LOW block select B inputs control memory selection and allow for memory expansion and re­ configuration. Each block select (Bi through B 4 ), when active, turns off the cor­ responding output and memory block. The


    OCR Scan     		PDF 10KH/10K- 100K-compatibie 10K/10KH CY10E422 CY100E422 CY10E422L-- 10E422L--

    IR 10e

    Abstract: No abstract text available
    Text: Preview llllìììlll I v T M DATA SHEET September 1989 M M 1 0 E422/M M 10 0 E422 256 x 4 ECL STATIC RAM FEATURES . . . 256 X 4 BITS ORGANIZATION ULTRA HIGH SPEED/STANDARD POWER - tA A = 3 ns, tA B S = 2 ns - 1EE = 220 mA LOW POWER VERSION - tAA = 5 ns - 1EE = 150 mA


    OCR Scan     		PDF KH/10 MM10E422 MM100E422 MM10E422/100E422 10E422 10E422 100E422 IR 10e

    CY7C2901

    Abstract: No abstract text available
    Text: ÌB Ìcy p ress • Table 10. Die Sizes of Cypress Devices continued P a rt N um ber Size (mil2) P a rt N um ber Size (mil2) ECL Logic CY 2909A 7968 CY100E301L 14875 CY2910A 21750 CY100E302L 14875 CY2911A 7968 CY100E422 6960 11800 CY100E474 10830 CY7C510


    OCR Scan     		PDF CY100E301L CY2910A CY100E302L CY2911A CY100E422 CY100E474 CY7C510 CY100E494 CY7C516 CY10E301L CY7C2901