J1926
Abstract: 4-pin Mini DIN down hole intrinsically safe pressure transducer
Text: PSIBAR CVD types 2200 Series / 2600 Series – General Purpose Industrial Pressure Transducers Series 2200 Gauge, Absolute, Vacuum and Compound Pressure Models Available Submersible, General Purpose and Wash Down Enclosures High Stability Achieved by CVD Sensing Element
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unjf
Abstract: unjf-3A Gems Sensors 33656E4
Text: PRESSURE SENSORS 6700 Series-Stable Industrial Transmitters with Turndown Capabilities CVD TECHNOLOGY PRESSURE TRANSDUCERS Ī Gauge and absolute pressure models Ī Submersible, general purpose and wash down enclosures Ī High stability achieved by CVD sensing element
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400bar;
000psi)
200mWG
33656E4
unjf
unjf-3A
Gems Sensors
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f 6267
Abstract: J514 "Pressure Transducers" 16-20UNF IEC 68-2-32 DIN 43650 Pressure Transducers
Text: 2200 Series / 2600 Series Universal Industrial Pressure Transducers Gauge, absolute, vacuum and compound pressure models available Submersible, general purpose and wash down enclosures High stability achieved by CVD sensing element Millivolt, voltage and current output models
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Pressure Transducers
Abstract: No abstract text available
Text: 2200 Series / 2600 Series Universal Industrial Pressure Transducers Gauge, absolute, vacuum and compound pressure models available Submersible, general purpose and wash down enclosures High stability achieved by CVD sensing element Millivolt, voltage and current output models
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UNJF-3A
Abstract: unjf MS33656-E4 Pressure Transducers gems 6700 33656E4 IEC 68-2-32 unjf insert CONDUIT UNF
Text: PRESSURE SENSORS 6700 Series-Stable Industrial Transmitters with Turndown Capabilities CVD TECHNOLOGY PRESSURE TRANSDUCERS Ī Gauge and absolute pressure models Ī Submersible, general purpose and wash down enclosures Ī High stability achieved by sputtered sensing element
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200mWG
33656E4
UNJF-3A
unjf
MS33656-E4
Pressure Transducers gems 6700
33656E4
IEC 68-2-32
unjf insert
CONDUIT UNF
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laser diode 905nm
Abstract: CVD 40 laser diode ldi 905 905nm rangefinding CVD 165 CVD-195 CVD-197 Laser Diode Specifications 1550nm CVD 65
Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 LDI High Power Pulsed Laser Diodes Revised 1-04 “NEW” LDI High Power Pulsed Laser Diodes Laser Diode Incorporated’s LDI CVD series lasers are strained layer
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850nm
905nm.
850nm,
905nm,
1550nm
laser diode 905nm
CVD 40
laser diode ldi 905
905nm
rangefinding
CVD 165
CVD-195
CVD-197
Laser Diode Specifications 1550nm
CVD 65
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TRANSDUCER BK
Abstract: gems pressure transducer
Text: PSIBAR CVD types 1200 Series / 1600 Series – OEM Transducers Featuring Exceptional Proof Pressure and Stability Specifications Gauge, Vacuum, and Compound Pressure Models General Purpose and Wash down Enclosures High Proof Pressure Achieved by Thicker Diaphragm Construction
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24AWG,
TRANSDUCER BK
gems pressure transducer
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Untitled
Abstract: No abstract text available
Text: Gauge, vacuum, and compound pressure models General purpose and wash down enclosures High proof pressure achieved by thicker diaphragm construction Voltage and current output models The features stability and toughness via its CVD and ASIC design coupled with a thicker diaphragm. The thicker diaphragm enables
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MIL-C-0026482
Abstract: unjf ZENER A16 6600-Series UNJF-3A L-12 L-13 33656E4 DIN 43650 MS33656E4
Text: -43 L-12 6600 Series-Stable Industrial Transmitters with Turndown Capabilities Ī Gauge and Absolute Pressure Models Ī Submersible, General Purpose and Wash down Enclosures Ī High Stability Achieved by CVD Sensing Element The 6600 series features customer accessible 5:1 turndown via a switch and
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33656E4
MIL-C-0026482
unjf
ZENER A16
6600-Series
UNJF-3A
L-12
L-13
33656E4
DIN 43650
MS33656E4
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power combiner broadband transformers
Abstract: 4 port circulator high power duplexer HIGH POWER HIGH FREQUENCY CVD DIAMOND CHIP RESISTORS footprint X-band Gan Hemt resistor parasitic capacitance DIAMOND TECHNOLOGIES DUAL JUNCTION CIRCULATOR CT1310D RFTM 9926 transistor
Text: Diamond Rf Resistives: The Answer to High Power and Low Capacitance | Novembe. Page 1 of 6 November 2011 issue: Technical Feature Diamond Rf™ Resistives: The Answer to High Power and Low Capacitance A single 0402 resistor, manufactured on a CVD diamond substrate, can dissipate 20 W of continuous
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8-4 BENDIX
Abstract: 2200BG pressure oil gauge sensor Gems Sensors Gems Sensors 2200
Text: The Strength of Gems Psibar Pressure Transducers Starts with the Science of CVD Gems Sensors provides the most stable pressure sensor on the market today by combining advanced sensing technology with highly automated and revolutionary manufacturing methods. The result is a sensing element comprised of silicon,
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Vac-15
Vac-24
Vac-39
8-4 BENDIX
2200BG
pressure oil gauge sensor
Gems Sensors
Gems Sensors 2200
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laser diode 905nm
Abstract: CVD 65 CVD 165 Tyco diodes CVD 67 CVD-90 laser diode ldi 905 rangefinding CVD 166 905nm
Text: Catalog 1307895 Revised 9-04 Fiber Optic Products Catalog High Power Pulsed Laser Diodes The CVD series lasers are strained layer quantum well devices fabricated by the MOCVD process. These pulsed lasers are available with up to 140W of peak power and either 850nm or 905nm.
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850nm
905nm.
850nm,
905nm,
1550nm
laser diode 905nm
CVD 65
CVD 165
Tyco diodes
CVD 67
CVD-90
laser diode ldi 905
rangefinding
CVD 166
905nm
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Untitled
Abstract: No abstract text available
Text: CVD-4200 Project Base FreeScale MPC8360 , 4T1/ E1, 1 WAN & 4 LAN ports FEATURE Powered by FreeScale MPC 8360 On board 128MB system memory, expandable up to 256MB Five 10/100 BASE-T interfaces for WAN/LAN connection 4 TDM/PCM channels for T1/E1 connection
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CVD-4200
MPC8360)
128MB
256MB
128MB
256MB
RJ45/SFP
12VDC
CVD-4200-1200
68/UL
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Untitled
Abstract: No abstract text available
Text: 600V 架橋ポリエチレン絶縁ビニルシ ースケーブル（CVDCVT、CVQ） 規格 定格 JIS C 3605 600V、 90℃ ●特長及び用途 ●識別 シース表面に施す色別ラインによる。 CVD：黒（色別ラインなし） 、白 CVT ：黒（色別ラインなし）
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IN4002 diode
Abstract: DIODE IN4002 CVD 60 CVD 67 15X16 CVD 167
Text: Laser Diode Incorporated 2 Olsen Avenue, Edison, New Jersey 08820 USA Voice: 732-549-9001, Fax: 732-906-1559 Internet: www.laserdiode.com E-mail: sales@laserdiode.com HIGH POWER Pulsed Laser Diodes High Efficiency and Low Drive Currents Stable Output from -50°C to +100°C
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10-32Thd
IN4002
2N3439
IN4002 diode
DIODE IN4002
CVD 60
CVD 67
15X16
CVD 167
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laser diode 905nm
Abstract: laser diode ldi 905 pin diodes radiation detector CVD-197 CVD 68 CVD 166 905nm CVD 165 850nm laser diode CVD 67
Text: Fiber Optic Business Unit Tyco Electronics/LDI 2 Olsen Avenue Edison, New Jersey 08820 USA Voice: 732-549-9001 Fax: 732-906-1559 Internet: www.laserdiode.com E-mail: sales@laserdiode.com Laser Diode Incorporated High Power Pulsed Laser Diodes High reliability and long life
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850nm,
905nm,
1550nm
905nm
laser diode 905nm
laser diode ldi 905
pin diodes radiation detector
CVD-197
CVD 68
CVD 166
905nm
CVD 165
850nm laser diode
CVD 67
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laser diode 905nm
Abstract: CVD 65 DIODE BY 339 CVD 163 15X16 CVD167 905nm
Text: Fiber Optic Business Unit Tyco Electronics/LDI 2 Olsen Avenue Edison, New Jersey 08820 USA Voice: 732-549-9001 Fax: 732-906-1559 Internet: www.laserdiode.com E-mail: sales@laserdiode.com Laser Diode Incorporated High Power Pulsed Laser Diodes High reliability and long life
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850nm,
905nm,
1550nm
905nm
laser diode 905nm
CVD 65
DIODE BY 339
CVD 163
15X16
CVD167
905nm
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pic18f MCU Family Reference Manual
Abstract: No abstract text available
Text: Enhanced mTouch Capacitive Touch Evaluation Kit and Accessory Boards User’s Guide 2009-2012 Microchip Technology Inc. DS41385F Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.
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DS41385F
DS41385F-page
pic18f MCU Family Reference Manual
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schematic dvd
Abstract: capacitor 0.1uf h1ld tcscs dvd circuit diagram Transistor Data sl 100 TMS320VC33 MCP130-315 0.1uf capacitor TMS320VC33, instruction set
Text: SL811HS + TMS320VC33 APPLICATION NOTE 1. 1.1. 1.2 1.3. 1.4. 1.5. General Notes: The attached schematic contains only the circuitry relevant to the operation of the SL811HS in conjunction with the TMS320VC33 microprocessor. Many of the microprocessor pins were left unconnected. It is up to the designing engineer to
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SL811HS
TMS320VC33
SL811HS
TMS320VC33
SL811HS.
74AHC32
74AHC04
vc33app
schematic dvd
capacitor 0.1uf
h1ld
tcscs
dvd circuit diagram
Transistor Data sl 100
MCP130-315
0.1uf capacitor
TMS320VC33, instruction set
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DIN 43650
Abstract: ph meter circuit gems pressure transducer 4-pin Mini DIN J1926 16ft
Text: 1200 Series / 1600 Series – OEM Transducers Featuring Exceptional Proof Pressure and Stability Specifications Gauge, Vacuum, and Compound Pressure Models General Purpose and Wash down Enclosures High Proof Pressure Achieved by Thicker Diaphragm Construction
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24AWG,
DIN 43650
ph meter circuit
gems pressure transducer
4-pin Mini DIN
J1926
16ft
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rcr32
Abstract: ITE 7831 lzl 60 c TIL 143 UPD66006 UPD6600G m8288 cdb 838
Text: IC dependence of oscillating characteristics UPD66006.OSO7 FCR32.0M2G - STD N. ItM ICHO t. m V1H/V1L LLL 4.8 CCC 4.7 HHH 4.4 b. m V2H/V2L 4.9 , -.4 .4 4.8 . .5 -.4 4.6 -.4 .5 Room Temp. Vdd CVD 5 Item a^e CL1/CL2 CpFD 10 / 10 e. CMHz] d. CuSl •. CX3 f.
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osci11
UPD6600G
FCR32
UPD66006
F066886
rcr32
ITE 7831
lzl 60 c
TIL 143
m8288
cdb 838
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MC68hc785
Abstract: hc68hc705 mc68hc705bd7b 9948 P 181 YE 98994
Text: MC68HC705BD7B - 1 FCR4.0MC5 Fig .a- e Vdd- 5 CVD * a. V1H/V1L 7 5 1 -1 7 VJL VZH ! c. Fosc .3 .1 -.1 -.3 -.5 800 600 400 4*9 — -.4 3.2 5;3 - - r- 2 f s - 8 -.2 - f i 1 « • d . Trtse -« ■ CuS] 90B 368 2 * _ - I 368 • e. Duty i 1 1X1 - 53.1
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MC68HC705BD7B
MC68HC785BD7B
MG68HC785BD7B
HC68HC785BD7B
HC68HC785BB7B
MC68hc785
hc68hc705
9948
P 181 YE
98994
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7815 CT
Abstract: TBA 480 7815 st 7815 CXP885F60 CXP885F68 CXP885F6B FCR16
Text: IC dependence of oscillating characteristics CXP885F60 FCR16.0M2G - STD Room Temp. Vdd CV] 5 item CL1/CL2 CpF] 10 / 10 a~e CXP885F60 - 25 FCR16.0H2G Vdd- 5 CV] (Fig.a~d> Ta- 20 Cdeg] — — * Typical ? 5 3 1 -1 7 5 3 1 -1 .5 .3 a. V1H/V1L CVD J- 1- 1- 1- 1- 1_ I_ I_ L
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CXP885F60
FCR16
CXP885F6B
7815 CT
TBA 480
7815
st 7815
CXP885F68
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SGH5002F
Abstract: HEM 152
Text: SGH5002F SONY. AIGaAs/GaAs Low Noise Microwave HEMT Preliminary D escription Package Outline U n it : mm S G H 5 0 0 2 F is an AIG aAs/G aAs HEM T fabricated by M O CVD M e ta l O rga n ic C hem ical Vapor D e p o s itio n . T h is 0 .5 m ic ro n ga te FET fe a ture s
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SGH5002F
SGH5002F-05
SGH5002F
HEM 152
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