16493J-001
Abstract: 16493T-002 B1520A N1300A-001 N1261A N1261A-001 N1262A-002 N1258A N1260A N1259A-010
Text: Agilent B1505A Power Device Analyzer/Curve Tracer Data Sheet Introduction The B1505A Power Device Analyzer/ Curve Tracer is a single-box solution with next-generation curve tracer functionality that can accurately evaluate and characterize power devices at up to 3000 volts and
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B1505A
B1505A
5990-3853EN
16493J-001
16493T-002
B1520A
N1300A-001
N1261A
N1261A-001
N1262A-002
N1258A
N1260A
N1259A-010
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FD3055
Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
Text: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve
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RFD3055,
RFD3055SM,
RFP3055
TA49082.
175oC
TB334
FD3055
Fp3055
IS433
4078 relay
RFP3055
TB334
AN7254
RFD3055
RFD3055SM
RFD3055SM9A
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40V 60A MOSFET
Abstract: RFG60P05E TB334
Text: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET RFG60P05E TO-247 • 60A, 50V • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve
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RFG60P05E
O-247
175oC
TB334
40V 60A MOSFET
RFG60P05E
TB334
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PC Printer Port Controls I-V Curve Tracer
Abstract: curve tracer short circuit tracer "curve tracer" V i Curve Tracer program curve tracer PC Printer Port MAX189 MAX492 "Differential Amplifier"
Text: A/D and D/A CONVERSION/SAMPLING CIRCUITS MEASUREMENT CIRCUITS Jul 01, 2001 APPLICATION NOTE 253 PC Printer Port Controls I-V Curve Tracer This article describes an I-V curve tracer circuit that uses a computer for display and control. The circuit is controlled
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MAX189:
MAX478:
MAX492:
MAX531:
MAX663:
MAX664:
PC Printer Port Controls I-V Curve Tracer
curve tracer
short circuit tracer
"curve tracer"
V i Curve Tracer
program curve tracer
PC Printer Port
MAX189
MAX492
"Differential Amplifier"
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Untitled
Abstract: No abstract text available
Text: Product data sheet Characteristics 24173 C60 - circuit breaker - C60N - 1P - 4A - C curve Commercial Status Commercialised Circuit breaker application Distribution Range of product C60 Product or component type Circuit breaker Device short name C60N Poles description
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diode c02
Abstract: diode c23 MBK441 All smd diode marking bb202 smd marking code C23 SOD523 marking c2
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB202 Low-voltage variable capacitance diode Product specification 2002 Feb 18 Philips Semiconductors Product specification Low-voltage variable capacitance diode FEATURES BB202 MARKING • Very steep C/V curve TYPE NUMBER
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M3D319
BB202
BB202
SCA74
613514/01/pp8
diode c02
diode c23
MBK441
All smd diode marking
smd marking code C23
SOD523 marking c2
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IRGPH50S
Abstract: No abstract text available
Text: Preliminary Data SheetPD - 9.760 IRGPH50S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve
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IRGPH50S
400Hz)
O-247AC
IRGPH50S
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596S
Abstract: 2SK596S 2SK596S-A A0944 2SK596SB 2SK596
Text: 2SK596S Ordering number : ENA0944 SANYO Semiconductors DATA SHEET N-channel Silicon Juncton FET 2SK596S Electret Condenser Microphone Applications Features • • • • Low output noise voltage : VNO=-110dB max VCC=4.5V, RL=1kΩ, Cin=15pF, VIN=0V, A curve
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ENA0944
2SK596S
--110dB
7524-0vement,
A0944-7/7
596S
2SK596S
2SK596S-A
A0944
2SK596SB
2SK596
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IRGB440U
Abstract: D-12 C588 C590 transistor irgb440
Text: Previous Datasheet Index Next Data Sheet PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGB440U
O-220AB
O-220
C-592
IRGB440U
D-12
C588
C590 transistor
irgb440
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IRGBC30U
Abstract: D-12
Text: Previous Datasheet Index Next Data Sheet PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGBC30U
O-220AB
C-662
IRGBC30U
D-12
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phototransistor application lux meter
Abstract: agilent application note 1587 Light Dependant Resistors APDS-9002-021 apds 9002 APDS-9002 Light Dependant Resistor PHOTO SENSOR of application HSDL-9000 lux meter
Text: Agilent APDS-9002 Miniature Surface-Mount Ambient Light Photo Sensor Data Sheet Features • Excellent responsivity which peaks in the human luminosity curve Close responsivity to the human eye Description The APDS-9002 is a low-cost analog-output ambient light
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APDS-9002
APDS-9002
HSDL-9000
5989-3051EN
phototransistor application lux meter
agilent application note 1587
Light Dependant Resistors
APDS-9002-021
apds 9002
Light Dependant Resistor
PHOTO SENSOR of application
lux meter
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SIV-3028 Data sheet
Abstract: No abstract text available
Text: SOLAR SIV-3028 Solar Curve Tracer SIV-3028 Data Sheet Features: • Automatically reads and calculates Isc, Voc and Pmpp • Monitors and displays ambient light level in W/m2 • Array, panel and individual cell measurements • Compact and rugged for field
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SIV-3028
SIV-3028
PW170KB0503B01
SIV-3028 Data sheet
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IRGPF50F
Abstract: al c269
Text: Previous Datasheet Index Next Data Sheet PD - 9.767A IRGPF50F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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IRGPF50F
10kHz)
O-247AC
C-272
IRGPF50F
al c269
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IRGPH20S
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD - 9.1138 IRGPH20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve
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IRGPH20S
400Hz)
O-247AC
IRGPH20S
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1E14
Abstract: 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3
Text: FSYC264D, FSYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs December 2000 • 34A, 250V, rDS ON = 0.080Ω • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSYC264D,
FSYC264R
36MeV/mg/cm2
MIL-PRF-19500,
MIL-PRF-19500.
1E14
2E12
FSYC264D
FSYC264D1
FSYC264D3
FSYC264R
FSYC264R1
FSYC264R3
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4 bit multiplier VERILOG
Abstract: 16 bit multiplier VERILOG ecdsa 64 bit multiplier VERILOG CRACK SEMICONDUCTOR
Text: CS256-ECC Elliptic Curve Processor CS256-ECC Data Sheet Introduction Crack Semiconductor's “performance-optimized” CS256-ECC 32-bit Device Pin-out The CS256-ECC supports a memory-like device interface to enable the system designer to easily interface the core to a processor bus interface.
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CS256-ECC
32-bit
32-bits
4 bit multiplier VERILOG
16 bit multiplier VERILOG
ecdsa
64 bit multiplier VERILOG
CRACK SEMICONDUCTOR
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1E14
Abstract: 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1
Text: FSJ260D, FSJ260R Data Sheet 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2000 • 44A, 200V, rDS ON = 0.050Ω • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSJ260D,
FSJ260R
36MeV/mg/cm2
MIL-PRF-19500,
MIL-PRF-19500.
1E14
2E12
FSJ260D
FSJ260D1
FSJ260D3
FSJ260R
FSJ260R1
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Untitled
Abstract: No abstract text available
Text: HSDL - 9000 Miniature Surface-Mount Ambient Light Photo Sensor Data Sheet Description The HSDL-9000 is a low cost, digital-output ambient light photo sensor in miniature industry-standard PLCC leadfree surface-mount package. It incorporates a photodiode, which peaks in human luminosity curve at 550 nm. Hence,
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HSDL-9000
LQ2647
LQ3147
LQ3187
5989-2300EN
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Untitled
Abstract: No abstract text available
Text: Data Sheet 100VAC Input/−12VDC 200mA Output Non-Isolated AC/DC Converter BP5090-12 Absolute Maximum Ratings 26.5MAX. Unit V °C °C °C mA 1 Max. −195 −13.2 200 0.20 0.20 0.20 − Unit V V mA V V Vp-p % 0.25±0.05 1.3±0.2 4.45MAX. 5.55MAX. Derating Curve
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100VAC
12VDC
200mA)
BP5090-12
45MAX.
55MAX.
200mA
R1010A
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10MHZ
Abstract: 16R8 GAL16V8 GAL22V10 signal path designer using use gal16v8
Text: Metastability Report state in time t than in time(t-n). In fact, the failure probability distribution follows an exponential curve. Figure 2 shows a typical failure frequency plot. Introduction The dictionary definition of metastability is “a situation
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PAL16R8-7
PAL16R8-7
TIBPAL16R6-7
TIBPAL16R6-7
SN74AS74
SN74AS74
GAL16V8B-7
10MHZ
16R8
GAL16V8
GAL22V10
signal path designer
using use gal16v8
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Light Dependent Resistor
Abstract: LIGHT DEPENDENT RESISTOR sensor IR LED and photodiode 5mm 100k light sensor Diode IR 1254 IR LED SENSOR 5MM datasheet vtl 600 hvac ISL29001 ISL29001IROZ ISL29001IROZ-T7
Text: ISL29001 Data Sheet February 8, 2007 FN6166.5 Light-to-Digital Sensor Features The ISL29001 is an integrated ambient light sensor with ADC and I2C interface. With a spectral sensitivity curve matched to that of the human eye, the ISL29001 provides 15-bit effective resolution while rejecting 50Hz and 60Hz
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ISL29001
FN6166
ISL29001
15-bit
5m-1994.
Light Dependent Resistor
LIGHT DEPENDENT RESISTOR sensor
IR LED and photodiode 5mm
100k light sensor
Diode IR 1254
IR LED SENSOR 5MM datasheet
vtl 600 hvac
ISL29001IROZ
ISL29001IROZ-T7
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672047
Abstract: 74303 47464 342637-3 8748 AN609 Si4559ADY 179502
Text: Si4559ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4559ADY
AN609
09-May-07
672047
74303
47464
342637-3
8748
179502
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Untitled
Abstract: No abstract text available
Text: FCI Semiconductor FR750.56 Series Preliminary Data Sheet 6.0 Amp MINIATURE PLASTIC SILICON RECTIFIERS_^ Description Mechanical Dimensions FR750.56 Series FR750.56 Series .245 > .220 Leads 1.00 tvp. .05 Dia. Features O O O O Forward Current Derating Curve
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FR750.
12S1SS
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UP101
Abstract: 175C UP100 UP150 UP151 UP152 UP153 UP200 UP201 UP202
Text: .LIED ELEK & SEHICOND D 6. b2E D • 0521221 0000030 ITO ■ ALLT X - C > S " ö V EPITAXIAL U LTR A -FA S T-R EC O V ER Y A X IA L —LEAD SILICON RECTIFIERS Individual Technical Data Sheets Giving Ratings and Characteristic Curve Are Available 6-1. 1 Ampere -
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Rectifier/DO-41
UP100
UP301
UP302
UP303
Rectifier/D0-201
UP600
UP601
UP602
UP603
UP101
175C
UP150
UP151
UP152
UP153
UP200
UP201
UP202
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