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    CRP 1005 Search Results

    CRP 1005 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADC1005CCJ Rochester Electronics LLC ADC1005 - A/D Converter Visit Rochester Electronics LLC Buy
    ADC1005BCJ-1 Rochester Electronics LLC ADC1005 - A/D Converter Visit Rochester Electronics LLC Buy
    100504S10Y Renesas Electronics Corporation 64KX4 ECL I/O SRAM Visit Renesas Electronics Corporation
    100504S8Y8 Renesas Electronics Corporation 64KX4 ECL I/O SRAM Visit Renesas Electronics Corporation
    100514S10Y8 Renesas Electronics Corporation 6KX4 ECL I/O SRAM Visit Renesas Electronics Corporation

    CRP 1005 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ASP AUSTIN SEMICONDUCTOR, INC. DRAM AS4LC4M4 883C 4 MEG X 4 DRAM 4 MEG x 4 DRAM 3.3V, E D O P A G E M O D E AVAILABLE IN MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 • SMD Planned - 24/28-Pin FEATURES Vcc DQ1 DQ2 WE RÄ5 NC • Industry-standard x4 pinout, timing, functions and


    OCR Scan     		PDF MIL-STD-883 24/28-Pin 150mW 048-cycle OPT067 1D02117 000017S

    NN5118160

    Abstract: No abstract text available
    Text: NN5116160A / NN5118160A series Fast Page Mode CMOS 1Mx 16bit Dynamic RAM NPN a< Preliminary Specification d e s c r ip t io n The NN5116160A/18160A series is a high performance CMOS Dynamic Random Access Memory orga­ nized as 1,048,576 words by 16 bits. The NN5116160A/18160A series is fabricated with advanced CMOS


    OCR Scan     		PDF NN5116160A NN5118160A 16bit NN5116160A/18160A NN5116 60AXX 128ms NN51181 NN5118160

    NN518128

    Abstract: nn514405 518128
    Text: NN518128 seríes Fast Page Mode CMOS 128Kx8bit Dynamic RAM NPN>a DESCRIPTION The N N 518128 is a high performance C M OS Dynamic Random Access Memory organized as 131,072 words by 8 bits. The NN 518128 is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in


    OCR Scan     		PDF NN518128 128Kx8bit NN518128L 128KX NN518128XJ nn514405 518128

    nn514406

    Abstract: No abstract text available
    Text: NN514405A / NN514405Bseries EDO Hyper Page Mode CMOS 1M x 4bit Dynamic RAM NPN)a( DESCRIPTION The NN514405A/B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4-bits. The NN514405A/B series is fabricated with advanced CMOS technology and designed with innovative design techniques


    OCR Scan     		PDF NN514405A NN514405Bseries NN514405A/B NN514405AL/BL NNS1440SA NNS1440SBaerà NN514405XXXI 128ms nn514406

    Untitled

    Abstract: No abstract text available
    Text: M D K l W N N 5 1 V 4400 B s e rie s Fast Page Mode CMOS 1Mx4bit Dynamic RAM DESCRIPTION The N N 51V4400B series is a high perform ance CMOS Dynam ic Random A ccess M em ory organized as 1,048,576 words by 4 bit. The N N 51V4400B series is fabricated with advanced C M OS technology and designed with innovative de­


    OCR Scan     		PDF 51V4400B NN51V4400B NN51V4400BL V4400BXX 128ms G13G4

    nn514260

    Abstract: No abstract text available
    Text: NN514260/ NN514260A series Fast Page Mode CMOS 256KX 16bit Dynamic RAM -y- DESCRIPTION The NN514260/A series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 16 bits. The NN514260/A series is fabricated with advanced CMOS technology and de­


    OCR Scan     		PDF NN514260/ NN514260A 256KX 16bit NN514260/A NN514260L/AL 0DD0S52 NN514260

    RL10V

    Abstract: No abstract text available
    Text: M O SEL VTTEUC PRELIMINARY V104J232 512K x 32 SIMM Features Description u 524,286 x 32 bit organizations • Utilizes 256K x 4 CM O S DRAMs ■ Fast access times 70 ns, 80 ns, 100 ns ■ Fast Page mode operation _ ■ Low power dissipation ■CAS before RAS refresh, RAS only refresh, and


    OCR Scan     		PDF V104J232 72-lead V104J232 RL10V

    Untitled

    Abstract: No abstract text available
    Text: NN51V18165B series EDO Hyper Page Mode _ _ _ _ CMOS 1M x 16bit Dynamic RAM NPNA' DESCRIPTION The NN51V18165B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18165B series is fabricated with advanced CMOS technology and designed with innovative


    OCR Scan     		PDF NN51V18165B 16bit NN51V18165BL 1005bSD NN51V181

    QML-38535

    Abstract: qml38535
    Text: REVISIONS APPROVED DATE YR-MO-DA DESCRIPTION LTR REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A 18 19 20 21


    OCR Scan     		PDF JUL94 TDD47DA 001174fl QML-38535 qml38535

    Untitled

    Abstract: No abstract text available
    Text: AUSTIN SEMICONDUCTOR, INC. AS4C4256 883C 256 X 4 DRAM 256K x 4 DRAM DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION SMD 5962-90617 MIL-STD-883 PIN ASSIGNMENT Top View 20-Pin LCC FEATURES Industry standard pinout and timing All inputs, outputs and clocks are fully TTL


    OCR Scan     		PDF AS4C4256 MIL-STD-883 20-Pin 175mW 12-cycle 4C4256 DS000014

    Untitled

    Abstract: No abstract text available
    Text: HM51W17800 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-664C Z Rev. 3.0 Feb. 24, 1997 Description The Hitachi HM51W17800 is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17800 offers Fast Page


    OCR Scan     		PDF HM51W17800 152-word ADE-203-664C 28-pin ns/60

    MT4C1024

    Abstract: MT4C1024-8
    Text: ASO MT4C1024 883C 1 MEG X 1 DRAM AUSTIN SEMICONDUCTOR, INC. 1 MEG DRAM 1 DRAM X FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 18-Pin DIP (D-6) FEATURES • Industry standard pinout and timing • All inputs, outputs and clocks are fully TTL


    OCR Scan     		PDF MT4C1024 MIL-STD-883 18-Pin 175mW 512-cycle MT4C1024-8

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-42S4000LAB32S SERIES 4 M-W ORD BY 32-BIT DYNAMIC RAM MODULE SO D IM M FAST PAGE MODE Description The MC-42S4000LAB32S series is a 4,194,304 w ords by 32 bits dynam ic RAM m odule (Small Outline DIMM) on which 8 pieces of 16 M DRAM: /ÎPD42S17800L are assembled.


    OCR Scan     		PDF MC-42S4000LAB32S 32-BIT PD42S17800L 72PIN M72S-50A2-2

    TAA 691

    Abstract: No abstract text available
    Text: HY5116400A Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116400A HY5116400A HY5116400Ato 1AD23-10-MAY94 HY5116400AJ HY5116400ASU HY5116400Ã HY5116400ASLT TAA 691

    Untitled

    Abstract: No abstract text available
    Text: NN514800 seríes Fast Page Mode CMOS 512K X 8bit Dynamic RAM NPN>a< Preliminary Specification DESCRIPTION The NN514800 series is a high performance CMOS Dynamic Random Access Memory organized as 524,288 words by 8 bits. The NN514800 series is fabricated with advanced CMOS technology and designed


    OCR Scan     		PDF NN514800 NN514800L S12KX NN514800XJ 128ms 512Kx8

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-422000A32BA, 422000A32FA 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description T h e M C -4 2 2 0 0 0 A 3 2 B A , 4 2 2 0 0 0 A 3 2 F A a re 2 ,0 9 7 ,1 5 2 w o r d s b y 32 b its d y n a m ic R A M m o d u le o n w h ic h 4


    OCR Scan     		PDF MC-422000A32BA, 422000A32FA 32-BIT M72B-S0A45

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 1M X 64-Bit EDO-DRAM Module 3.3V 1M X 72-Bit EDO-DRAM Module HYM64V1005GU-50/-60/-70 HYM72V1005GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module


    OCR Scan     		PDF 64-Bit 72-Bit HYM64V1005GU-50/-60/-70 HYM72V1005GU-50/-60/-70 168pin V1005GU-50/-60/-70 L-DIM-168-10

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3V DRAM Modules HYM64Vx005GCD L -60 144 pin SO-DIMM EDO-DRAM Modules 8MB , 16MB, 32MB & 64MB density Preliminary Information • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Modules with 8 Byte busses • Chip-on Board (COB) Assembly Technique


    OCR Scan     		PDF HYM64Vx005GCD L-DIM-144-C1 L-DIM-144-C4 2Mx64

    mcm2018a

    Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan     		PDF A16685-7 EMTR1147 mcm2018a sun hold RAS 0610 cqq 765 RT IC HX 710B U256D

    scl 1444

    Abstract: v 4005
    Text: 3.3V DRAM Modules HYM64Vx005GC L -60 144 pin SO-DIMM EDO-DRAM Modules Preliminary Information • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Modules with 8 Byte busses • Chip-on Board (COB) Assembly Technique • One bank 1M x 64, 2M x 64, 4M x 64 and 8M x 64 non-parity module organisations


    OCR Scan     		PDF HYM64Vx005GC L-DIM-144-1 L-DIM-144-4 2Mx64 scl 1444 v 4005

    qml-38535

    Abstract: 54BCT245 SMD loub
    Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 3 PMIC N/A PREPARED BY STANDARDIZED MILITARY DRAWING CHECKED BY THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE


    OCR Scan     		PDF 5962-9051401MRX SNJ54BCT245J 5962-9051401MSX SNJ54BCT245W 5962-9051401M2X SNJ54BCT245FK qml-38535 54BCT245 SMD loub

    Untitled

    Abstract: No abstract text available
    Text: AMD £ 1 R E V IS IO N S LTR DATE YR-MO-DA DESCRIPTION AiUml /Vrhpniir. «'*<|ua t i on tnr unbiased hake under marqin test K f ' l m a A, back end iM r q in te st step i. C orr ec te d m i l i t a r y ¡;fjr-t numbers for d evi ce types 01 ana 0 2 , Technical channes


    OCR Scan     		PDF --MS-904

    SMJ55161-80GBM

    Abstract: SMJ55161-75HKCM SQ1D 5962-94549 QML-38535 sq10 amplifier smd 5Gs 5962-9454901MXA 5962-9454903QYC SMJ55161-70HKCM
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED YR-MO-DA Changes in accordance with NOR 5962-R167-96. 96-07-01 M. A. Frye Changes in accordance with NOR 5962-R126-97. 96-11-19 M. A. Frye Add device type 03. Add vendor CAGE 01295 as source of supply for device type 03. Update boilerplate. Editorial changes throughout.


    OCR Scan     		PDF 5962-R167-96. 5962-R126-97. R00470Ã SMJ55161-80GBM SMJ55161-75HKCM SQ1D 5962-94549 QML-38535 sq10 amplifier smd 5Gs 5962-9454901MXA 5962-9454903QYC SMJ55161-70HKCM

    101490

    Abstract: P22n HM50464P-12 50464 ram
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY


    OCR Scan     		PDF ADE-40 101490 P22n HM50464P-12 50464 ram