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    COLLMER SEMICONDUCTOR 2DI Search Results

    COLLMER SEMICONDUCTOR 2DI Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    COLLMER SEMICONDUCTOR 2DI Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    6DI20MS-050

    Abstract: DM 100 1DI400MP-120 2DI50M-050 1DI50MA-050 1DI200MA-050 900-1200 6di50m-120 2DI50M-120 6DI15MS-050
    Text: L3E D • 22307^2 GGOlñb? G1D « C O L HIGH HFE M-SERIES DARLINGTON MODULES ^ <5 COLLMER SEMICONDUCTOR INC Ratings and Characteristics Voltage-Ratings Type Part Number DCCurrentGain C ollector C urrent cont. Thermal Resistance R t h (j -c ) tlFE Ic VcE


    OCR Scan     		1DI30MA-050 1DI50MA-050 00MA-050 1DI200MA-050 400MN-120 1DI400MP-120 2DI50M-120 2DI75M-120 2DI100M-120 2DI150M-120 6DI20MS-050 DM 100 2DI50M-050 900-1200 6di50m-120 6DI15MS-050 PDF

    6DI15S-050

    Abstract: 6DI10A-050 IC M605 6di30a-120 1DI100MA-050 6DI30A-050 EVF31H-035 2DI150M-120 M605 1DI200M-120
    Text: COLLMER SEMICONDUCTOR INC MAE D I 25307=12 DQ01574 5GÛ « C O L <& Power Darlington Modules 4 PACK/6 PACK VCEX' VCEO Device Type Vceo Volts VCEO Volts sus Volts ic Pc cont. Watts Amps (per Xstr) Switching time (Max.) ton ts tf jisec. usee. ^sec. Ic Amps.


    OCR Scan     		DQ01574 EVF31H-035 EVF31H-050 4DI30A-030 2DI50M-12Û 2DI75M-120 2DI100M-120 2DI150M-120 6DI15M-120 6DI30M-120 6DI15S-050 6DI10A-050 IC M605 6di30a-120 1DI100MA-050 6DI30A-050 M605 1DI200M-120 PDF

    1DI200A-120

    Abstract: 1si10A 1DI200Z-120 1SI100A-100 M114 1DI400A-140 1DI300ZP-120 1DI300A-120 1DI200ZP 2DI150Z-100
    Text: COLLMER SEMICONDUCTOR INC 2230712 4ÔE » 0 Q 0 1 S 7 3 b71 M C O L <S Power Darlington Modules 1000 VOLTS Device Type V c bo V ceo VCEO s u s I Volts Volts Volts I Ic Pc cont. Amps Watts (perxslr) h ra @ min Ic VcE Amps. Volts Switching time (max.) ton


    OCR Scan     		0Q01S73 EXT100A-140 2DI150A-140 1DI200Z-140 1DI300Z-140 2DI50Z-140 2DI75Z-140 2DI100Z-140 2DI150Z-140 1DI200A-120 1si10A 1DI200Z-120 1SI100A-100 M114 1DI400A-140 1DI300ZP-120 1DI300A-120 1DI200ZP 2DI150Z-100 PDF

    lbll

    Abstract: 2DI75D-055A
    Text: BIPOLAR TRANSISTORS Ratings and Specifications COLLMER SEMICONDUCTOR INC 4flE • J> 22307*12 Ü O O lbll 2GS ■ COL T-3>V3>£ 3-terminal type 600 volts class power transistor modules • • • • P o w e r tra n s is to rs and free w h e e ls are b u ilt into o ne package.


    OCR Scan     		2DI30D-050A 2DI50D-050A 2DI75D-050A 2DI100D-050 2DI150D-050 2DI200A-050 2DI300A-050 3K71-055 EVL31-055 EVL32-055 lbll 2DI75D-055A PDF

    1DI200H-055

    Abstract: 1DI200H D1200F ETN81-055 1D1200K-055 1di50e-055 1DI200h055 1di100e 1DI75E-055 D1240A
    Text: » COLLMER . - I SEMICONDUCTOR INC 2SE t Bi 2S3S712 OOOIOIS 0 • V i 33-J.f T -3 3 ' 3 5 :18 600 volts class power transistor modules Power transistors and free wheels are built into one package. All terminals are insulated from mounting plate. Best suited for m otor control applications with 2 2 0 to 2 4 0 volts inputs.


    OCR Scan     		EVK71-055 EVL31-055 EVL32-055 M203204 1DI75F-055 1DI100E-055 1DI100F-055 1D1150E-055 1D1150F-Q55 1D1150H-055 1DI200H-055 1DI200H D1200F ETN81-055 1D1200K-055 1di50e-055 1DI200h055 1di100e 1DI75E-055 D1240A PDF

    1DI200A-120

    Abstract: 1D1300A 1DI300A-120 2DI100A-120 2DI150A-120 2DI30A-120 2DI50A-120 2DI75A-120 M105 M206
    Text: BIPOLAR TRANSISTORS Ratings and Specifications COLLMER SEMICONDUCTOR INC MAE » • eaaflTTS OüOlfc.13 Oflfi ■ COL T'3>V3>5 1200 volts class power transistor modules • • • • P o w er transistors and free w h e e ls are built into one package. All te rm in a ls are insulated fro m m o u n tin g plate.


    OCR Scan     		01bl3 2DI30A-120 1DI200A-140 1DI300A-140 EVF31H-035 EVF31H-050 1DI200A-120 1D1300A 1DI300A-120 2DI100A-120 2DI150A-120 2DI50A-120 2DI75A-120 M105 M206 PDF

    1DI200H-055

    Abstract: 1DI200H055 1DI150 1di100 1di200h 1di50 1di75 1di15 1di200 2DI75D-055A
    Text: COLLMER SEMICONDUCTOR IN C BSE H • BS3 8 7 1 S DDD101S Ü ■ t - 3 i- 3 f T -3 3 '3 5 :18 600 volts class power transistor modules • Power transistors and free wheels are built into one package. • All terminals are insulated from mounting plate. ■Best suited for motor control applications with 2 2 0 to 2 4 0 volts inputs.


    OCR Scan     		DDD101S EVK71-055 EVL31-055 EVL32-055 ETN81-055 1DI240A-055 1DI480A-055 2DI50D-055A 2DI75D-055A 2DI240A-055 1DI200H-055 1DI200H055 1DI150 1di100 1di200h 1di50 1di75 1di15 1di200 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor Modules COLLMER SEMICONDUCTOR I NC MñE D • 22307^5 QQOlblS 141 « C O L T V * -^ 1000 volts class power transistor modules ■T w o p o w e r tra n s is to rs and tw o free w h e e ls are b u ilt into o ne package. • A ll te rm in a ls are in su la te d fro m m o u n tin g plate.


    OCR Scan     		EV1274 EV1277 EV1234 EV1255 Pack200D-100 1DI300D-100 1DI400D-100 PDF

    1DI100MA-050

    Abstract: 2d175m-120 6DI20MS-050 fuji darlington module 6di50m-120 1DI100MA 1DI100MA050 2DI50M-050 1DI100 M613
    Text: H igh H f e Series Darlington Modules Ratings and Characteristics Type Single Darlington Modules 600V Dual Darlington Modules 600V Six Pack Darlington Modules 600V SIL Six Pack Darlington Modules 600V v CE0 sus IV) vCEX(sus) <V) •c (A) hFE (min) •c (A)


    OCR Scan     		1DI30MA-050 1DI50MA-050 1DI100MA-050 1DI200MA-050 1DI300M-050 1DI400M-050 223A7C DD2S21 2d175m-120 6DI20MS-050 fuji darlington module 6di50m-120 1DI100MA 1DI100MA050 2DI50M-050 1DI100 M613 PDF

    ID500A-030

    Abstract: 2DI75S-050A EVK75-050 EVL31-050 EVG31-050 ETG81-050 IC 4511 ETN81-055 EVK31-050 ETK85-050
    Text: COLLHER SEMICONDUCTOR INC MAE D 2230715 DGÜlbSñ 2Mb ICOL <s Power Darlington Modules Switching Time max ton te tf ' Package Single Darlington Modules (Isolated) ETG81-050 ETK81 -050 ETK85-050 600 600 600 600 600 600 450 450 450 30 50 75 200 300 350 100


    OCR Scan     		ETG81-050 ETK81 ETK85-050 ETL81 ETN81 1DI240A-055 ETN85-050 1DI480A-055 36kg- 35-45kg ID500A-030 2DI75S-050A EVK75-050 EVL31-050 EVG31-050 IC 4511 ETN81-055 EVK31-050 PDF

    power bjt transistor 600v

    Abstract: fuji bjt 50D-050A transistor and schematic symbols Transistor BJT 100A 2D TRANSISTOR 50d-050 M208 bjt transistor 600v 2pack transistor module 50a 600V
    Text: FUJI 2DI 50D-050A M U M Ë ïïr a iÊ /< 2-Pack BJT 600 V 50 A 7— \ s7 'S *S 7 & :& > n .— V POWER TRANSISTOR MODULE Features • High Current • h F E ^ g i' High DC Current Gain •mm Insulated Type A pplicatio ns • High Power Switching • ftE fM n X X fll Uninterruptible Power Supply


    OCR Scan     		50D-050A E82988 power bjt transistor 600v fuji bjt 50D-050A transistor and schematic symbols Transistor BJT 100A 2D TRANSISTOR 50d-050 M208 bjt transistor 600v 2pack transistor module 50a 600V PDF

    fuji 2di 30Z-120

    Abstract: 30Z-120 fuji 2di BJT 1200V fuji bjt JA BJT Collmer Semiconductor 2DI VEBo-10V
    Text: 2-Pack BJT 1200 V 30A 2DI30Z-120 Ä I-/I J l / L ” U U /< 7 - ThîS ; Outline Drawings POWER TRANSISTOR MODULE •*NM! : Features • SSSÎŒ High Voltage i y ' f ' f ' i * - K r tiB E • ASO M £ i.' • t&tkfë Including Freewheeling Diode Excellent Safe Operating Area


    OCR Scan     		30Z-120 E82988 fuji 2di 30Z-120 30Z-120 fuji 2di BJT 1200V fuji bjt JA BJT Collmer Semiconductor 2DI VEBo-10V PDF

    fuji 2di

    Abstract: 1000v Transistor bjt power transistor bjt 1000 a Collmer Semiconductor 2DI 75Z-100 bl25
    Text: 2-Pack BJT 1000 V 75 A A t / 1 75Z-100 # I i/i/ EMfp^nK 2DI , < 7 - POWER TRANSISTOR MODULE : F ea tures • ¡SWfiE High Voftage • 7 U — f r ' i y > 5 *9 *4 • ASO M £ i ' • K rtft Inciuding Free Wheeling Diode Excellent Safe Operating Area Insulated Type


    OCR Scan     		75Z-100 E82988 Tj-125Â fuji 2di 1000v Transistor bjt power transistor bjt 1000 a Collmer Semiconductor 2DI 75Z-100 bl25 PDF

    ID500A-030

    Abstract: EVM31-050 ID500A030 2DI75S-050A ET127 EVK75-050 etn81-055 ET1275
    Text: COLLHER SEMICONDUCTOR INC MAE D 2236712 ÜGDlbSñ 2 Mb w Power Darlington Modules ICOL T - 3 > ^ '3 > 5 ' S ü t EO volts Device yp*W mMs M í£ i9 & ~ € : Switchinq Time max i ton ts tf fisec j.sec /isec. VCEO (sus) volts Pac' m w È â m Single Darlington Modules (Isolated)


    OCR Scan     		ETG81-050 ETK81 ETK85-050 ETL81 ETN81-055 1DI240A-055 ETN85-050 1DI480A-055 35kgcm ID500A-030 EVM31-050 ID500A030 2DI75S-050A ET127 EVK75-050 ET1275 PDF

    fuji 2di

    Abstract: Collmer Semiconductor 2DI 50z-100 Collmer Semiconductor 2DI bjt 50a power transistor bjt 1000 a 50Z-100 50Z100
    Text: 2-Pack BJT 1000 V 50 a 2DI Ä I - / I 50Z-100 I \ß \ß Outline Drawings s \ r7 — \ = 7 y j > 7 s ^ ^ : i > = L - V POWER TRANSISTOR MODULE • I t ë : Features • ¡SAME High Voltage • 7 l) — U KF*3/8c • ASO including Free W heeling Diode Excellent Safe Operating Area


    OCR Scan     		50Z-100 E82988 fuji 2di Collmer Semiconductor 2DI 50z-100 Collmer Semiconductor 2DI bjt 50a power transistor bjt 1000 a 50Z-100 50Z100 PDF

    200D-100

    Abstract: 200D100 IEBo-400mA two transistors power transistor bjt 1000 a 1000v Transistor bjt fuji bjt vebo10v
    Text: _ _ - _ 2-Pack BJT 2DI200D-100 '» A * I Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • High Voltage t 7 ' J “ 7h>f U > *f ¥ 4 KrtJSt Including Free Wheeling Diode • ASO Excellent Safe Operating Area • Insulated Type I A p p licatio n s


    OCR Scan     		200D-100 E82988 C-200A 200D-100 200D100 IEBo-400mA two transistors power transistor bjt 1000 a 1000v Transistor bjt fuji bjt vebo10v PDF

    transistor 3Ft

    Abstract: 75d05 fuji 2di fuji bjt 75D-050A 3Ft transistor VCBo-600V 2DI 75D 050A M208 free transistor high power
    Text: FUJI 2-Pack BJT 600 V 75 A 2DI 75D-050A MUMËïïraiÊ POWER TRANSISTOR MODULE ‘ Features m y i} — j ? < i # — K rtiR • hF E /^B v,' • H ftti In clud ing Free W h e e lin g D io d e H igh DC Current Gain In su lated Type : Applications • ^ iiJ X -f


    OCR Scan     		75D-050A IC-75A, transistor 3Ft 75d05 fuji 2di fuji bjt 75D-050A 3Ft transistor VCBo-600V 2DI 75D 050A M208 free transistor high power PDF

    transistor H1A

    Abstract: h1a transistor fuji 2di fuji 2DI 75Z-120 75Z12 bjt 1200V 15A JA BJT TRANSISTOR WM 9 75Z-120
    Text: 2-Pack BJT 1200 V 75A 2DI 75Z-120 r i^ u TLtlO ïïIâDE ^<7- h : Outline Drawings POWER TRANSISTOR MODULE : Features • SffiSGE High Voltage • y l — y K rtiR • A S O ^ '/ S i* • ÜÊÜSffê including Free W heeling Diode Excellent Safe Operating Area


    OCR Scan     		75Z-120 E82988 transistor H1A h1a transistor fuji 2di fuji 2DI 75Z-120 75Z12 bjt 1200V 15A JA BJT TRANSISTOR WM 9 75Z-120 PDF

    1B04 transistor

    Abstract: power transistor bjt 1000 a 1B04 1B04 transistors 130Z-100 30AF 30A two transistors 100equivalent transistor equivalent
    Text: 2-Pack BJT 1000 V ,030" Av 2DI30Z-100 / I l/U ä l i Outline Drawings POWER TRANSISTOR MODULE F e a tu re s • ftWBE • 7y — High Voltage U >$¥<4 =fr — KrtSS • ASO Including Free Wheeling Diode Excellent Safe Operating Area • W&M insulated Type


    OCR Scan     		130Z-100 100equivalent) E82988 1B04 transistor power transistor bjt 1000 a 1B04 1B04 transistors 130Z-100 30AF 30A two transistors 100equivalent transistor equivalent PDF

    6DI15S-050

    Abstract: 1DI100MA-050 m605 6DI30B-050 IC M605 6DI20MS-050 6DI100-050 1DI100 EVF31H-035 6DI20C-050
    Text: COLLMER S E M I C O N D U C T O R INC MAE D I 25367=12 00 01 57 4 50Ô « C O L Power Darlington Modules <s 4 PACK/6 PACK VCEX- Device Type Ic V ceo V ceo V ceo s u s c o n t. Volts Volts Volts Amps Pc Watts (per Xstr) Switching time (Max.) ton ts tf jisec.


    OCR Scan     		EVF31H-035 EVF31H-050 4DI30A-030 6DI10A-050 6DI10A-120 EVF33T-040 EVF31T-050A 1DI400MP-120 2DI50M-120 2DI75M-120 6DI15S-050 1DI100MA-050 m605 6DI30B-050 IC M605 6DI20MS-050 6DI100-050 1DI100 6DI20C-050 PDF

    6DI15S-050

    Abstract: 6di30z-100 6DI30A-050 1DI100MA-050 6DI15S050 6DI30B-050 EVF31H-050 EVF31H-035 2di75m-120 M605
    Text: COLLMER S E M I C O N D U C T O R INC MAE D I 25367=12 00 01 57 4 50Ô « C O L Power Darlington Modules <s 4 PACK/6 PACK VCEX- Device Type Ic V ceo V ceo V ceo s u s c o n t. Volts Volts Volts Amps Pc Watts (per Xstr) Switching time (Max.) ton ts tf jisec.


    OCR Scan     		EVF31H-035 EVF31H-050 4DI30A-030 6DI10A-050 6DI10A-120 EVF33T-040 EVF31T-050A 6DI15A-05015 1DI400MP-120 2DI50M-120 6DI15S-050 6di30z-100 6DI30A-050 1DI100MA-050 6DI15S050 6DI30B-050 2di75m-120 M605 PDF

    EVK31-050

    Abstract: EVL31-050 EVM31-050 EVF31T-050A EVK71-050 etk85-050 EV1234M EVG31-050 ET1266M ETL81-050
    Text: 2 2 3 8 7 9 2 C O LLM E R SEM ICO N D UCTO R IN C From ¡=UJT1 vüEK SfpE- 74 74C 0 0 7 4 8 D Ty D E | 223fl7T2 0 0 0 0 7 4 6 3 | The Leader in Power Transistor Technology ?3 ^7 f* mm* WÉ tÈÊÊÏÊ, • 200 A and 300 A Thesè 1200V {V0Ex <SUS } Darlington Powfcr


    OCR Scan     		480VAC 50AV75A, fa100 ETG81-050 ETK81-050 ETK85-050 ETL81-050 ET127* ETM36-030* ETN36-030* EVK31-050 EVL31-050 EVM31-050 EVF31T-050A EVK71-050 EV1234M EVG31-050 ET1266M PDF

    EVL31-050

    Abstract: 1DI500A-030 EVM31-050A EVK75-050 1D500A-030 EVK31-050 1DI400D-100 ETK81-050 1DI300D-100 2DI100D-100
    Text: COLLHER SEMICONDUCTOR INC MAE D 223 67* 12 D0 DLS7 5 7 3 5 Power Darlington Modules 'T - 3 3 - Z ° ï ICOL <s 200, 300 AND 500 VOLTS Device type VCEO VCBO volts VCEO Volts sus Volts Ic cont. Amps Pc Watts (perxstr) hre @ Ic min Amps. Switching time (max.)


    OCR Scan     		ETG81 ETK81-050 ETK85-050 ETL81-050 ETN81-0553 EV1234 2DI50D-100 2DI75D-100 EV1255 2DI100D-100 EVL31-050 1DI500A-030 EVM31-050A EVK75-050 1D500A-030 EVK31-050 1DI400D-100 1DI300D-100 PDF

    EVL31-050

    Abstract: EVK31-050 1DI500A-030 1DI200D-100 ET127 ETK81-050 1DI200D100 EVL31-055 ETL81-050 ETN81-055
    Text: COLLHER SEMICONDUCTOR INC MAE D 223 67* 12 D0 DLS7 5 7 3 5 Power Darlington Modules 'T - 3 3 - Z ° ï ICOL <s 200, 300 AND 500 VOLTS Device type VCEO VCBO volts VCEO Volts sus Volts Ic cont. Amps Pc Watts (perxstr) hre @ Ic min Amps. Switching time (max.)


    OCR Scan     		ETG81 ETK81-050 ETK85-050 ETL81-050 ETN81-055 EV1234 2DI50D-100 2DI75D-100 EV1255 2DI100D-100 EVL31-050 EVK31-050 1DI500A-030 1DI200D-100 ET127 1DI200D100 EVL31-055 PDF