EVK31-050
Abstract: EVL31-050 EVM31-050 EVF31T-050A EVK71-050 etk85-050 EV1234M EVG31-050 ET1266M ETL81-050
Text: 2 2 3 8 7 9 2 C O LLM E R SEM ICO N D UCTO R IN C From ¡=UJT1 vüEK SfpE- 74 74C 0 0 7 4 8 D Ty D E | 223fl7T2 0 0 0 0 7 4 6 3 | The Leader in Power Transistor Technology ?3 ^7 f* mm* WÉ tÈÊÊÏÊ, • 200 A and 300 A Thesè 1200V {V0Ex <SUS } Darlington Powfcr
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480VAC
50AV75A,
fa100
ETG81-050
ETK81-050
ETK85-050
ETL81-050
ET127*
ETM36-030*
ETN36-030*
EVK31-050
EVL31-050
EVM31-050
EVF31T-050A
EVK71-050
EV1234M
EVG31-050
ET1266M
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transistor darlington package to.3
Abstract: 2SC2625 I251 2SC2246 fl251 2sd920 2SC2243 sewing motor 2sd930 2SC2542
Text: “C D L L M E R S E M I C 0 N í üC T 0 R INC 74 DfT|223fl7T2 D 0 D G h 3 7 S Katings and Specifications 2238792 C O L L M E R S E M IC O N D U C T O R 74C 00637 IN C V ~ CÛiüMR SEMICOMOUCTÜ 14368 PROTON ROAD DALLAS, TEXAS 7S244 USMUWl 214-233-1589 High speed switching transistors
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a23fl7T2
D0DDh37
S-52M2SÃ
50kHz
2SC2929
T0-220AB
2SC2767
O-220AB
2SC2243
2SC2542
transistor darlington package to.3
2SC2625
I251
2SC2246
fl251
2sd920
sewing motor
2sd930
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GDM207
Abstract: No abstract text available
Text: 22307=12 O D Ü M m T2b • ‘ S P E C I F I C A T I ON DEVICE NAME : TYPE NAME : SPEC. No. : I GBT 1M B H 2 0 D - 0 6 0 M S5F3686 M I _ :_ Jun. -25-1996 F uj i E l e c t r i c Co., Ltd. This Specification is subject to change without notice.
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MS5F3686
223fl7c12
0G0420Q
MS5F3686
GDM207
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IG8T
Abstract: WE VQE 11 E Z4020 FUJI ELECTRIC CO.,LTD
Text: Ratings and characteristics of Fuji IGBT 1 IVI B M 5 1 1. Out Iine Drawing 6 2. Equivalent circuit C :Co Ilector r.ONNFCTION © CATE © COLLECTOR © EMITTER 3 @ < > 3. Absolute maximum ratings C Tc=25°C Symbo1s 1terns Ratings Units Col lector-Einitter Voltage
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H04-004-03
0QDM54S
000MSSS
H04-004-03
IG8T
WE VQE 11 E
Z4020
FUJI ELECTRIC CO.,LTD
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2SK897-M
Abstract: 897m 2sk897
Text: 2 S K 8 9 7 -M S IP M O S FU JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET • Features ■ Outline Drawings • High speed sw itching • Low on-resistance • No secondary breakdow n • Low driving p o w er • High voltage ■A pplications
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2SK897-M
SC-67
2SK897-M
897m
2sk897
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diode mark L2
Abstract: ERA83-004
Text: ERA83-004 1A • Outline Drawing SCHOTTKY BARRIER DIODE ■ Features • Lo w V f Color code ; W hite • Ultra small package, possible for 5mm V pitch automatic insertion V o lta g e class • Super high speed switching • High reliability by planer design
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ERA83-004
500ns,
223fl7T2
diode mark L2
ERA83-004
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cnc schematic
Abstract: A2214 3D7D 82307 SC 2630 2SK1505-M
Text: 2SK1505-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F-III SERIES • Outline Drawings ■ Features • High cu rren t • Low on-resistance • N o secondary breakdow n • Low driving p o w er • High fo rw a rd T ran scon d u ctan ce
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2SK1505-M
SC-67
A2-214
2SK1505-M
cnc schematic
A2214
3D7D
82307
SC 2630
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D83M-004
Abstract: d83m d83m004 tfk 545 d83m00 g30a ESAD83M-004 VM48 TFK 102
Text: E S A D 8 3 M -0 0 4 3 oa ê±/j Outline Drawings SCHOTTKY BARRIER DIODE : Features Insulated package by fully m o ld in g . • teVF m m m & fa Connection Diagram Low V F S up er h ig h speed s w itc h in g . High reliability by planer design . : A pplications
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ESAD83M-004
500ns
D83M-004
d83m
d83m004
tfk 545
d83m00
g30a
VM48
TFK 102
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SM 91A
Abstract: No abstract text available
Text: SPECIFICATION SILICON DIODE TYPE NAME : E RW O 4 - 0 6 0 SPEC. No. DATE : F u j i E l e c t r i c Co., Ltd. This Sp ecification is subject to change without notice. DATE NAME APPROVED DRAWN Fuji Electric Co^Lici. CHECKED 1/6 Y 0257-R-004a 22307^2 DDDSTbû 5T7
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0257-R-004a
C0W6C71QH
TD-Z20AC
20kHz
Duty50Ã
H04-004-Ã
D005175
ERWQ4-060
SM 91A
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Untitled
Abstract: No abstract text available
Text: S P E C 1 F 1 CAT 1 0 N DEVICE NAME 1G B T TYPE NAME 1M B 0 8 - 1 2 0 SPEC. No. M S 5 F 3 5 2 8 DATE_ :_ Jun.-25-1996 F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change without notice, DATE NAME APPROVED Fuji Electric C o ^ U d .
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H04-004-07
SC-65
MS5F3528
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1004P
Abstract: KBPC10005P KBPC1010P
Text: KBPC10005P Thru KBPC1010P 10 AM P SILICO N BR ID G E REC TIFIER • FE A TU R ES • • • • Rating to 1000V PRV Ideal for printed circuit board Surge overload rating to 150 Amperes peak Reliable low cost construction utilizing molded plastic technique results in inexpensive product
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KBPC10005P
KBPC1010P
E106441
MIL-STD-202,
KBPC10-P
2E337T2
1004P
KBPC1010P
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20kv diode
Abstract: ESJA53-20A HIGH VOLTAGE DIODE 20kv L#IF4
Text: 1, SCOPE This specification provide the ratings and the requirements for high voltage si Iicon diode ESJA53-20A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.
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ESJA53-20A
D0047Ã
ESJA53-CEA
20kv diode
HIGH VOLTAGE DIODE 20kv
L#IF4
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F3525
Abstract: D4270 FUJI IGBT
Text: SPEC I F I CATION DEVICE NAME :_I G B T IYPE NAME :_1 M B C 0 3 - 1 ? 1 SgEC- No._ ;_M S 5 F 3 5 2 5 PATE_ :_ Jun. -25-199fi F uj i Juh CHECKED - 3 $ NAME -'% APPROVED F u ji E le c tr ic Cc4_t<± (T. '[«fc-AOUfcll V
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MS5F35P5
DD042b7
T0-220AB
SC-46
MS5F3525
D04275
H04-004-03
n3525
F3525
D4270
FUJI IGBT
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6MBI50FA-060
Abstract: M603 6MBI50FA060
Text: 6MBI50FA-060 Fuji Pow er Module 50A IGBT MODULE ( F series) • Features • Low Saturation Voltage • Voltage Drive • All Screw Terminals for Automated Assembly ■ A p p lications • In v erte r fo r M o to r Drive • AC and DC Servo D rive A m p lifie r
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6MBI50FA-060
PE3671E
6MBI50FA-060
M603
6MBI50FA060
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fuji ipm
Abstract: ipm application note fuji 6MBP30RH060 fuji capacitor ipm application fuji 30a GDGS532 A05 zener fin heat sink igbt fuji igbt transistor modules fuji transistor modules
Text: Thla matarla! and ha Information haraln I» lha preparly of Fuji Glaatrlc Co,Lid. Thay ahailba nalthar reproduced, ooplad, lant, or disclosed In any way whatsoever for tha vie of any third party nor uaad for tha manufacturing purpose* w ithout tha expre»» written oonaant of Fuji EiectrlQ Co,Ltd.
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6MBP30RH060
MS6M0387
MS6M0387
H04-004-07
H04-004-Q3
6MBP30RH060.
6MBP30RH060)
223fl7TS
fuji ipm
ipm application note fuji
6MBP30RH060
fuji capacitor
ipm application fuji 30a
GDGS532
A05 zener
fin heat sink igbt
fuji igbt transistor modules
fuji transistor modules
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welding machines schematics
Abstract: M604 IC151 VCE-600V
Text: fMüßDe 6-Pack IGBT 600 V 15 A 6 M B Ì f 5 fM W Ô IGBT MODULE F series Outline Drawings • F e a tu re s • Low S a tu ratio n V oltage • Voltage Drive • V a rie ty o f P ow er Capacity Series ■ A p p lic a tio n s • Inverter fo r M otor Drive
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E23fl
DaS31S
welding machines schematics
M604
IC151
VCE-600V
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ERB83-004
Abstract: h03 diode
Text: E R B 8 3 - 0 4 i 7 A 4 "%— K v 'a y h ^ — : Outline Drawings SCHOTTKY BARRIER DIODE 5.0 : Features • vF Low V I M arking f * 5 - 3 —K : W Color code : ^ Super high speed sw itching. High reliability by planer design. A b rid g e d ty p e name
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ERB83-004
223fi712
223fl7T2
h03 diode
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IG8T
Abstract: 54B diode
Text: 6-Pack IGBT 1200 V 8A FUJI IGBT MODULE L series O utline D raw ings • Features 2-<6f5.4 • High Speed S w itch in g • Low Saturation Voltage • Voltage Drive ■ A p plica tio n s i mi m in « > [. i • Inverter for Motor Drive e k • AC and DC S ervo Drive A m p lifie r
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E82988
223fl7T2
IG8T
54B diode
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Untitled
Abstract: No abstract text available
Text: S P E C DEVICE NAME I F I C A T I O N :_ | G B T TYPE NAME 1 M B C 1 0 - 0 6 0 SPEC. No. M S : DATE 5 F 3 5 1 9 Jun.-25-1996 F u j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE D RA W N CHECKED -35 NAME APPROVED
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H04-004-07
T0-220AB
SC-46
MS5F3519
H04-004-03
H04-004-03
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HIGH VOLTAGE DIODE kv
Abstract: ESJA54-08A 1d0c esJA54
Text: DATE NAME CHECKED OWG.NO. ThU Mild lh« nlotmalkon liar tin I* Hie |»r«|>efly c l Fuji Eleelrle C o.,lid. Thay «itali bn n«lll«*r reproduced. cuplet , te n l, or dlscloaetf In any way whulanavar lor Ihn ni« of nny Uürd party nor ui«d lor Ih» mftfUifftCtuHr»(| purpo»«i wllh<ml
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ESJA54-08A
0IHDL242
H04-004-07
ESJA54-08A
H04-004-03
GGDbB43
DDDL244
000b245
523S7TS
00Db24b
HIGH VOLTAGE DIODE kv
1d0c
esJA54
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