Relays- 12V
Abstract: M070020 Betonvej 10 DK-4000 M2000 selco M0700-00 M0700-20 M1000
Text: M0700 Optional Print Cards M0700-00 Universal PC Board M-CONTROLLER 17 M0700-20 OUTPUT BOARD WITH RELAYS AND OPEN COLECTOR 17 M-CONTROLLER M0700-11 -21 -26 OUTPUT BOARD WITH RELAYS 17 51 51 71 71 18 18 18 52 52 72 72 M0700-20 Relay PC Board On the rear of M1000, M2000 and M2100
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M0700
M0700-00
M1000,
M2000
M2100
M0700-20
M0700-11
Relays- 12V
M070020
Betonvej 10 DK-4000
M2000 selco
M1000
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Q62702-F1574
Abstract: GMA marking
Text: BFS 483 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • fT = 8GHz F = 1.2dB at 900MHz • Two galvanic internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
OT-363
Q62702-F1574
p15mA
Dec-16-1996
Q62702-F1574
GMA marking
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5B00
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT ANODE MARK TOP VIEW REV, A B NOTES: 1t j 16 2E Ì15 1.3.5.7. ANODE 2.4.6.8. CATHODE 3t j 14- 10,12,14-/16. COLECTOR 4E Ì 13 5 È 3 12 bf 3 11 PART NUMBER REV. OCP — PCT41 1 6/E B E.C.N. NUMBER AND REVISION COMMENTS E.C.N, #10BRDR. & #10776.
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PCT41
10BRDR.
5B00
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PC702VB
Abstract: No abstract text available
Text: PC702V SHARP High Colector -emitter Voltage Type Photocoupler & Lead forming type I type and taping reel type (P type) are also available. (PC702VI/PC702VP)(Page 656) * * T U V (VDE0884) approved type is also available as an option. • Features (Unit ! mm)
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PC702V
PC702VI/PC702VP)
VDE0884)
E64380
PC702VB
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PC8052
Abstract: O300V pc8q52 sharp
Text: SHARP PC852 Series /PC853/ PC853H High Colector -emitter Voltage Type Photocouplers PC852 Series PC853/PC853H * Lead forming type I type and taping reel type (P type) are also available. (PC852I/PC852P/PC853I/PC853P) (Page 656) • Features 1. High collector-emitter voltage
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PC852
/PC853/
PC853H
PC853/PC853H
PC8D52
PC8Q52
PC852I/PC852P/PC853I/PC853P)
PC853
PC8052
O300V
pc8q52 sharp
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IRGB430UD2
Abstract: IRGTI140U06 CPV362MU IRGPC50U
Text: Illl E S S I n t e r n a t i o n a l R e c t if i e r Insulated Gate Bipolar Transistors VCES Colector to Emitter Voltage Volts PMt Number M«*VcE(on) Colector to Emitter Voltage (Volts) IGBTs ICContinuous Colector Current Tc=25‘ C Tc=100*C (Amps) (Amps)
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30kHz)
O-220AB
O-247AC
IRGB420UD2
IRGB430UD2
IRGP430UD2
IRGP440UD2
IRGP450UD2
IRGTI140U06
CPV362MU
IRGPC50U
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Untitled
Abstract: No abstract text available
Text: forward [ntejuatiokal electronicslid, BC818S SEMICONDUCTOR TECHNICAL DATA. NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS at Tamb=*25*C Characteristic Colectoi>Base Voka^ Colector-EmWer Vokage Emitter-Base Voltage Colector Curreit
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BC818S
Ta-25Â
100uA
100mA
500mA
300mA
50MHZ
300uSJ
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Untitled
Abstract: No abstract text available
Text: P FORWARDINTERNATIONAL ELECTRONICS LTD. 2N2222 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Colector-Bnittef Voltage: VCBO=30V * Cofcctor Dissipation: Pc max =625 mW ABSOLUTE MAXIMUM RATINGS at Tamb=25'C C haracteristic
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2N2222
300uS,
150mA
500roA
150mA
500mA
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106U
Abstract: be311
Text: PART NUMBER REV. OCP — PCT41 1 6 / E A UNCONTROLLED DOCUMENT TOP VIEW ANODE MARK REV, A NflTFS' j 16 1.3.5.7. ANODE 2E Ì15 2.4.6.8. CATHODE 9,11,13,15. EMITTER 3t j 14- 10,12,14-.16. COLECTOR 4E Ì 13 5 È 3 12 bf 3 11 7t 3 ID BE 3 9 E.C.N. NUMBER AND REVISION COMMENTS
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OCP-PCT41
106U
be311
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pc851
Abstract: No abstract text available
Text: SHARP PC851 High Colector-em itter Voltage Type Photocoupler PC851 * Lead forming type I type and taping reel type (P type) are also available. ( PC851I/PC851P) (Page 656) • Features ■ Outlne Dim ensions (Unit : mm) 1. High collector-emitter voltage
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PC851
PC851I/PC851P)
000VTM)
E64380
pc851
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2sb646
Abstract: 2SD666 2S8646 2SB646A
Text: HITACHI 2SB646, 2SB646A SILICON PNP EPiTAXIAL LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SD666/A a r 1. Hmiiier 2. Colector Base Dimension« in mm} I A B S O L U T E M AXIM UM R A T IN G S (Ta=255C Item Symbol M AXIM UM C O L L E C T O R D tSSiPA T lO H
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2SB646,
2SB646A
2SD666/A
2SB646
2S8646A
2SD666
2S8646
2SB646A
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em 434
Abstract: PC826 PC846 PC816 Sharp PC816
Text: SHARP PC816 Serise High Colector-emitter Voltage, High Density Mounting Type Photocoupler PC816 Series * Lead forming type I type and taping reel type (P type) are also available. (PC816I/PC816P) (Page 656) • Features ■ Applcatkm s 1. High collector-emitter voltage ( V c a : 7 0 V )
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PC816
PC816I/PC816P)
PC816
PC826
PC846
000Vrms)
E64380
em 434
PC826
PC846
PC816 Sharp
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I12C
Abstract: KSC2758 samsung tuner
Text: SAMSUNG SEM ICON D UCTOR . INC KSC2758 14E D | T 'lb M m a OOObTSS fl | NPN EPITAXIAL SILICO N TRANSISTOR ' RF. MIXER FOR UHF TUNER T-31-15 SO T-23 • HIGH POWER GAIN TYP. 17d8 • LOW NF TYP. 2.8dB ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Colector-Base Voltage
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71b4ma
KSC2758
T-31-15
OT-23
600MH
400MHz
I12C
samsung tuner
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Untitled
Abstract: No abstract text available
Text: F LS TTL DN74LS Series DN74LS156 DN74LS156 Dual 2-line to 4-line Decoders / Demultiplexers with Open Colector Outputs • Description P-2 DN74LS156 contains two 2-bit binary to quarternary decoder/demultiplexer circuits with open collector outputs. ■ Features
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DN74LS
DN74LS156
DN74LS156
16-pin
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PED relay
Abstract: ICA11 2SC2738 vdfc
Text: Silicon NPN Triple Diffused Power Transistors TO-220 Package 2SC2738 NPN A b s o lu te M axim um R a tin g s (T i= 2 5 °C ) item Colector-Base Voltage Colecto r-Emiter VoliOQO Em«ter-8asö Voilago Peak C dockx Carrent Coilector Curren« Baso Current Cottedor Power Dissipaion
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2SC2738
O-220
1c-i25Â
IC-02A,
L-25n
PED relay
ICA11
vdfc
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670p
Abstract: No abstract text available
Text: PC3Q66/PC3Q66Û SHARP PC3Q66/PC3Q66Q i-flat Package, High Colector-Em itter Voltage Type Half Pitch Photocoupler • Features ■ O ullne Dimensions 1. High collector-em itter voltage U nit : mm 1 0 .3 t u (V cko : 80V) 2. Half pitch type (lead pitch : 1.27mm)
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PC3Q66/PC3Q66Û
PC3Q66/PC3Q66Q
PC3Q16)
500VTM)
30seconds)
PC3Q66Q)
670p
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Untitled
Abstract: No abstract text available
Text: LS TTL DN74LS Series DN74LS156 DN74LS156 IV, 7 4 ^ 1 5 6 Dual 2 -lin e to 4 -lin e Decoders / Demultiplexers with Open Colector Outputs • Description D N 74LS156 P-2 c o n ta in s tw o 2 -b it b in a ry to q u a rte rn a ry d e c o d e r/d e m u ltip le x e r c irc u its w ith o p e n c o lle c to r o u tp u ts .
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DN74LS
DN74LS156
74LS156
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transistor marking RHs
Abstract: No abstract text available
Text: SIEMENS BFS 483 NPN Silicon RF Transistor « For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA » f i = 8GHz F = 1.2dB at 900MHz •Two galvanic internal isolated Transistors in one package n Fi I R Li 111 □ ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
Q62702-F1574
OT-363
900MHz
IS211
transistor marking RHs
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AVC8
Abstract: No abstract text available
Text: SI E M EN S C M P N T S -, OPTO ñS3b32b GGOSD4Û 3 H S I E X 44E » MCT2/MCT2E SIEMENS PHOTOTRANSISTOR OPTOCOUPLER T -m - 93 Package Dim ensions in Inches mm Ñ fl Pi um COLECTOR FEATURES M a x im u m R a t in g s • 7500 Volt W ithstand Test Voltage Gallium Arsenide LED
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S3b32b
E52744
S23b32b
AVC8
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DN74LS156
Abstract: ab2c
Text: LS TTL DN74LS Series D N 7 4 L S 1 5 6 DN74LS156 IV 7 ^ r5 & Dual 2-lin e to 4 -lin e Decoders / Demultiplexers with Open Colector Outputs) P-2 • Description D N 74LS156 contains tw o 2-bit binary to quarternary d ecoder/dem ultiplexer circuits w ith open collector outputs.
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DN74LS
DN74LS156
DN74LS156
16-pin
SO-16D)
ab2c
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ttl ic for demultiplexer
Abstract: DN74LS156 ab2c
Text: LS T T L DN74LS Series DN74LS156 DN74LS156 Dual 2-line to 4-line Decoders / Demultiplexers with Open Colector Outputs • Description P-2 D N 7 4 L S 1 5 6 c o n ta in s tw o 2 -b it b in a ry to q u a rte m a ry d e c o d e r/d e m u ltip le x e r c irc u its w ith o p e n c o lle c to r o u tp u ts .
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DN74LS
DN74LS156
DN74LS156
16-pin
SO-16D>
ttl ic for demultiplexer
ab2c
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TQ-220AB
Abstract: IRGBC20S IRGNI165F06 *gBC20f
Text: In t e r n a t io n a l R e c tifie r « Insulated Gate Bipolar Transistors IGBTs Part Numbar cran VCES Cdactorto EnMarVokage Volt. Mm VceM Colectorto EmitterVoltage (Vota) ICConUnuoiB Cohctof Currant Tc*25’C Tc«100*C (Amp*) (Amp*) Pd Mu Power Dissipation Qrcti
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IRGBC20S
IRGBC30S
IRGBC40S
IRGPC30S
IRGPC40S
IRGPC50S
O-220AB,
O-247AC
Applicat165
IRGBC20F
TQ-220AB
IRGNI165F06
*gBC20f
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PC895
Abstract: No abstract text available
Text: SHARP PC865 Serlos High Sensitivity, Low Colector Dark Current, High Colector-emitter Voltage Type Photocoupler • Applcatfons PC865 Series ■ Features 1. Low collector dark current I a o : M A X . 10 / / A at V ce — 2 4 V , Ta = 8 5 ° C 2. High current transfer ratio
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PC865
PC865
PC875
PC895
P264380
PC895
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFS 483 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • fT = 8GHz F = 1.2dB at 900MHz • Two galvanic internal isolated Transistors in one package El Fl F SI ¥ Ef FI ¥ C2 ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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900MHz
Q62702-F1574
OT-363
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