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    CODE A06 RF SEMICONDUCTOR Search Results

    CODE A06 RF SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    CODE A06 RF SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a06 transistor

    Abstract: Code "A06" RF Semiconductor transistor A06 f 1405 zs BFP450 A06 NPN Siemens 1713 Q62702-F1590 marking A06 SIEMENS BFP450
    Text: SIEGET 25 BFP450 NPN Silicon RF Transistor l For Medium Power Amplifiers l Compression Point P = +19 dBm at 1.8 GHz -1dB l l l Maximum Available Gain Gma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency fT = 24 GHz Gold metalization for high reliability


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    PDF BFP450 25-Line Transistor25 OT343 Q62702-F1590 a06 transistor Code "A06" RF Semiconductor transistor A06 f 1405 zs BFP450 A06 NPN Siemens 1713 Q62702-F1590 marking A06 SIEMENS BFP450

    a06 transistor

    Abstract: TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405
    Text: SIEGET 25 BFP405 NPN Silicon RF Transistor Low Current Applications l For Oscillators up to 12 GHz l For Noise Figure F = 1.15 dB at 1.8 GHz l Outstanding G = 22 dB at 1.8 GHz Transition Frequency f = 25 GHz l Gold metalization for high reliability l SIEGET 25-Line


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    PDF BFP405 1512dB 25-Line OT343 Q62702-F-1592 a06 transistor TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405

    AMS 3630

    Abstract: a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420
    Text: SIEGET 25 BFP420 NPN Silicon RF Transistor l For High Gain Low Noise Amplifiers l For Oscillators up to 10 GHz l Noise Figure F = 1.05 dB at 1.8 GHz Outstanding G = 20 dB at 1.8 GHz l Transition Frequency f = 25 GHz l Gold metalization for high reliability


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    PDF BFP420 25-Line OT343 Q62702-F1591 AMS 3630 a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420

    MMIC A06

    Abstract: marking A06 amplifier zo 103 ma Code "A06" RF Semiconductor HP MMIC mmic marking code MSA-0611 MSA-0611-BLK MSA-0611-TR1 msa a06
    Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0611 Features Description • Cascadable 50 Ω Gain Block The MSA-0611 is a low cost silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in the surface mount plastic SOT-143 package. This MMIC is


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    PDF MSA-0611 MSA-0611 OT-143 MMIC A06 marking A06 amplifier zo 103 ma Code "A06" RF Semiconductor HP MMIC mmic marking code MSA-0611-BLK MSA-0611-TR1 msa a06

    MMIC A06

    Abstract: MMIC SOT 89 marking CODE marking A06 amplifier HP MMIC MSA-2111 MSA-2111-BLK MSA-2111-TR1 MMIC marking code 101
    Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-2111 Features Description • Cascadable 50␣ Ω Gain Block The MSA-2111 is a low cost silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a surface mount plastic SOT-143 package. This MMIC is


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    PDF MSA-2111 MSA-2111 OT-143 MMIC A06 MMIC SOT 89 marking CODE marking A06 amplifier HP MMIC MSA-2111-BLK MSA-2111-TR1 MMIC marking code 101

    Code "A06" RF Semiconductor

    Abstract: MMIC A06 marking A06 amplifier MSA-2111 MSA-2111-BLK MSA-2111-TR1 10GHz Agilent RF amplifier SOT-89
    Text: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-2111 Features Description • Cascadable 50 Ω Gain Block The MSA-2111 is a low cost silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a surface mount plastic SOT-143 package. This MMIC is


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    PDF MSA-2111 MSA-2111 OT-143 5965-9663E Code "A06" RF Semiconductor MMIC A06 marking A06 amplifier MSA-2111-BLK MSA-2111-TR1 10GHz Agilent RF amplifier SOT-89

    MMIC A06

    Abstract: marking A06 amplifier agilent model marking code A06 Code "A06" RF Semiconductor MSA-0611 MSA-0611-BLK MSA-0611-TR1 A06 monolithic amplifier Code A06 RF Semiconductor msa a06
    Text: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0611 Features Description • Cascadable 50 Ω Gain Block The MSA-0611 is a low cost silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in the surface mount plastic SOT-143 package. This MMIC is


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    PDF MSA-0611 MSA-0611 OT-143 5965-9584E MMIC A06 marking A06 amplifier agilent model marking code A06 Code "A06" RF Semiconductor MSA-0611-BLK MSA-0611-TR1 A06 monolithic amplifier Code A06 RF Semiconductor msa a06

    Code "A06" RF Semiconductor

    Abstract: sot143 Marking code p1 MSA-0611 MSA-0611-BLK MSA-0611-TR1 hp mmic hp mmic marking code MSA0611
    Text: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0611 Features Description • Cascadable 50 Ω Gain Block The MSA-0611 is a low cost silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in the surface mount plastic SOT-143 package. This MMIC is


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    PDF MSA-0611 MSA-0611 OT-143 5965-9584E Code "A06" RF Semiconductor sot143 Marking code p1 MSA-0611-BLK MSA-0611-TR1 hp mmic hp mmic marking code MSA0611

    TLV5734

    Abstract: No abstract text available
    Text: TLV5734 TRIPLE 8ĆBIT 30ĆMSPS ADC WITH HIGHĆ PRECISION CLAMP FOR YUV/RGB VIDEO SLES026A − APRIL 2002 − REVISED JANUARY 2003 applications features D D D D D D D D D D D D D 3-Channel CMOS ADC Single 3.3-V Supply 8-Bit 30-MSPS A/D Conversion Very Low Power: <300 mW Typical


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    PDF TLV5734 SLES026A 30-MSPS 64-Pin TLV5734

    TLV5734

    Abstract: No abstract text available
    Text: TLV5734 TRIPLE 8ĆBIT 30ĆMSPS ADC WITH HIGHĆ PRECISION CLAMP FOR YUV/RGB VIDEO SLES026A − APRIL 2002 − REVISED JANUARY 2003 features applications D D D D D D D D D D D D D D D D D D D 3-Channel CMOS ADC Single 3.3-V Supply 8-Bit 30-MSPS A/D Conversion


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    PDF TLV5734 30MSPS SLES026A 30-MSPS 64-Pin

    Code A08 RF Semiconductor

    Abstract: TLV5734 TLV5734PAG TLV5734PAGG4 MS-026 Code "A06" RF Semiconductor SLES026A TS 3643 N1
    Text: TLV5734 TRIPLE 8ĆBIT 30ĆMSPS ADC WITH HIGHĆ PRECISION CLAMP FOR YUV/RGB VIDEO SLES026A − APRIL 2002 − REVISED JANUARY 2003 features applications D D D D D D D D D D D D D D D D D D D 3-Channel CMOS ADC Single 3.3-V Supply 8-Bit 30-MSPS A/D Conversion


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    PDF TLV5734 30MSPS SLES026A 30-MSPS 64-Pin Code A08 RF Semiconductor TLV5734 TLV5734PAG TLV5734PAGG4 MS-026 Code "A06" RF Semiconductor TS 3643 N1

    TLV5734

    Abstract: No abstract text available
    Text: TLV5734 TRIPLE 8ĆBIT 30ĆMSPS ADC WITH HIGHĆ PRECISION CLAMP FOR YUV/RGB VIDEO SLES026A − APRIL 2002 − REVISED JANUARY 2003 features applications D D D D D D D D D D D D D D D D D D D 3-Channel CMOS ADC Single 3.3-V Supply 8-Bit 30-MSPS A/D Conversion


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    PDF TLV5734 30MSPS SLES026A 30-MSPS 64-Pin

    B24 ti

    Abstract: TLV5734 b24 b03 MS-026 TLV5734PAG TLV5734PAGG4
    Text: TLV5734 TRIPLE 8ĆBIT 30ĆMSPS ADC WITH HIGHĆ PRECISION CLAMP FOR YUV/RGB VIDEO SLES026A − APRIL 2002 − REVISED JANUARY 2003 features applications D D D D D D D D D D D D D D D D D D D 3-Channel CMOS ADC Single 3.3-V Supply 8-Bit 30-MSPS A/D Conversion


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    PDF TLV5734 30MSPS SLES026A 30-MSPS 64-Pin B24 ti TLV5734 b24 b03 MS-026 TLV5734PAG TLV5734PAGG4

    Untitled

    Abstract: No abstract text available
    Text: TLC5733A 20 MSPS 3ĆCHANNEL ANALOGĆTOĆDIGITAL CONVERTER WITH HIGHĆPRECISION CLAMP SLAS104B − JULY 1995 − REVISED FEBRUARY 2001 D 3-Channel CMOS ADC D 5-V Single-Supply Operation or 5-V D D D D D D Analog/Digital Core Supply With I/O Digital Supply From 2.7 V to 5.25 V


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    PDF TLC5733A SLAS104B 64-Pin

    6dr6

    Abstract: No abstract text available
    Text: 1234567 Voltage Regulator with LIN Transceiver 89ABCD9E7 o o Compatible to LIN Specification 2.0 and SAE J2602 Operating voltage VS = 6 . 18 V Low standby current consumption of typ. 15 µA in sleep mode 1 “noload” current < 200µA o Linear low drop voltage regulator 5V/70mA ±2%


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    PDF 89ABCD9E7 J2602 V/70mA ISO9141 J2602 ISO14001 TH8062 6dr6

    N2T-TR-A02-00250

    Abstract: TRANSCALC N2A-XX-S1449-1KB HA 11561 N2F-TR-E01-00005 N2A-XX-S056R-350 t029 ir M-Flux AR kit fet 27611 U G N 3140 sensor v
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book transducer-class strain gages vishay micro-measurements vse-db0075-0802 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vse-db0075-0802 N2T-TR-A02-00250 TRANSCALC N2A-XX-S1449-1KB HA 11561 N2F-TR-E01-00005 N2A-XX-S056R-350 t029 ir M-Flux AR kit fet 27611 U G N 3140 sensor v

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


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    PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    diode B14 zp

    Abstract: B14 ZP B14 zp diode "Pager receiver" PBC 6500 f10 60s TM1D11 Code A08 RF Semiconductor SBP3 M6502
    Text: Preliminary HT9580 Character Pager Controller Features • • • • • • • • • • • • • • • • Operating voltage: 2.4V~3.5V Temperature range: -30°C to +85°C “CCIR Radio paging Code No.1” POCSAG compatible Low power crystal oscillator control


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    PDF HT9580 M6502 SED15X, MC141X HD66410 16-bit diode B14 zp B14 ZP B14 zp diode "Pager receiver" PBC 6500 f10 60s TM1D11 Code A08 RF Semiconductor SBP3

    Siemens DIODE E 1240

    Abstract: AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor
    Text: S IE M E N S SIEGET 25 BFP420 NPN Silicon RF Transistor • • • • • • For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency 1j = 25 GHz Gold metalization for high reliability


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    PDF BFP420 25-Line Transistor25 Q62702-F1591 OT343 Siemens DIODE E 1240 AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor

    SIEMENS BFP405

    Abstract: marking A06 transistor A06
    Text: SIEMENS SIEGET 25 BFP405 NPN Silicon RF Transistor • • • • • • For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability


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    PDF BFP405 25-Line Transistor25 62702-F-1592 OT343 SIEMENS BFP405 marking A06 transistor A06

    a06 transistor

    Abstract: CHIP T503 S BFP450 siemens BFP450
    Text: S IE M E N S SIEGET 25 BFP450 NPN Silicon RF Transistor • • • • • For Medium Power Amplifiers Compression Point P.1dB = +19 dBm at 1.8 GHz Maximum Available Gain G ma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency f j = 24 GHz


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    PDF 25-Line Transistor25 BFP450 Q62702-F1590 OT343 a06 transistor CHIP T503 S BFP450 siemens BFP450

    MMIC marking code S2

    Abstract: MARKING CODE A06
    Text: What HEW LETT* mLliM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-2111 Features Description • Cascadable 50 Q. Gain Block • Medium Power: 10 dBm at 900 MHz • High Gain: 16.5 dB Typical at 900 MHz • Low Noise Figure: 3.3 dB Typical at 900 MHz


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    PDF MSA-2111 MSA-2111 OT-143 MMIC marking code S2 MARKING CODE A06

    vic 6567

    Abstract: M5Y4 vic ii 6569 M5C1 6567 commodore 128 full color dot matrix 8 x 8 commodore M6C2 PAL-N-6572
    Text: COMMODORE SEMICONDUCTOR 73 DËJ 22^4173 0000133 4 D ~33~0? C o m m o d o r e S e m ic o n d u c t o r G r o u p C s q subsidiary of Commodore Business Machines, Inc. 6567 VIDEO IHTKRFACE CHIP SPECIFICATION SHEET General Description; The 6567 Video Interface Chip VIC II is a multi-purpose video


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    PDF PAL-N-6572, PAL-M-6573. 5ET4173 A000UT vic 6567 M5Y4 vic ii 6569 M5C1 6567 commodore 128 full color dot matrix 8 x 8 commodore M6C2 PAL-N-6572

    Untitled

    Abstract: No abstract text available
    Text: VIC64 CYPRESS SEMICONDUCTOR VMEbus Interface Controller with D64 Functionality Features In addition to D 8, D16 and D 32 operations, the V IC64 perform s D64 da ta transfer. T he V IC 64 is designed w ith an advanced C M O S process using high-perform ance stan d ard cells. O n-chip o u tp u t


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    PDF VIC64 V1C068A 64-bit 145-Pin 160-Lead