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    CMPA80 Search Results

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    CMPA80 Price and Stock

    MACOM CMPA801B030S

    IC AMP RADAR 7.9GHZ-11GHZ 48QFN
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    DigiKey CMPA801B030S Cut Tape 45 1
    • 1 $451.76
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    CMPA801B030S Reel 50
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    CMPA801B030S Digi-Reel 1
    • 1 $451.76
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    Mouser Electronics CMPA801B030S
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    • 100 $633.29
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    Richardson RFPD CMPA801B030S 12 1
    • 1 $898.28
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    MACOM CMPA801B030P

    GAN MMIC 30W 28V 8.0-11.0GHZ
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    MACOM CMPA801B030F

    IC RF AMP 8GHZ-11GHZ
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    MACOM CMPA801B025F

    IC RF AMP 8.5GHZ-11GHZ 440208
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    MACOM CMPA801B025P

    IC AMP RADAR 8.5GHZ-11GHZ 440216
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    CMPA80 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CMPA801B025F Cree/Wolfspeed RF/IF and RFID - RF Amplifiers - IC RF AMP 8.5GHZ-11GHZ 440208 Original PDF
    CMPA801B025F-AMP Wolfspeed CMPA801B025F DEV BOARD WITH HEMT Original PDF
    CMPA801B025F-TB Cree/Wolfspeed RF/IF and RFID - RF Amplifiers - IC RF AMP 8.5GHZ-11GHZ MODULE Original PDF
    CMPA801B030F Wolfspeed GAN MMIC 30W 28V 8.0-11.0GHZ Original PDF

    CMPA80 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CMPA801B025F CMPA801B025F CMPA80 1B025F

    Untitled

    Abstract: No abstract text available
    Text: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher


    Original     		PDF CMPA801B025D CMP801B025D CMPA801B025D

    CMPA801B025D

    Abstract: No abstract text available
    Text: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher


    Original     		PDF CMPA801B025D CMP801B025D CMPA801B025D

    CMPA801B025

    Abstract: X-band Internally Matched Power GaN HEMTs
    Text: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 X-band Internally Matched Power GaN HEMTs

    Untitled

    Abstract: No abstract text available
    Text: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CMPA801B025F CMPA801B025F CMPA80 1B025F

    CMPA801B025D

    Abstract: CMPA801B025
    Text: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher


    Original     		PDF CMPA801B025D CMP801B025D CMPA801B025D CMPA801B025

    CMPA801B025

    Abstract: CMPA801B025F x-band mmic 3.5 DC Jack
    Text: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 x-band mmic 3.5 DC Jack

    CMPA801B025F

    Abstract: CMPA801B025 cree rf 1B025F package 440208 cree rf cmpa801b025f
    Text: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 cree rf package 440208 cree rf cmpa801b025f

    CMPA801B025D

    Abstract: No abstract text available
    Text: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher


    Original     		PDF CMPA801B025D CMP801B025D CMPA801B025D