Untitled
Abstract: No abstract text available
Text: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher
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CMPA801B025D
CMP801B025D
CMPA801B025D
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CMPA801B025D
Abstract: No abstract text available
Text: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher
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Original
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PDF
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CMPA801B025D
CMP801B025D
CMPA801B025D
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CMPA801B025D
Abstract: CMPA801B025
Text: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher
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Original
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PDF
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CMPA801B025D
CMP801B025D
CMPA801B025D
CMPA801B025
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CMPA801B025D
Abstract: No abstract text available
Text: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher
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Original
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PDF
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CMPA801B025D
CMP801B025D
CMPA801B025D
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