F611
Abstract: L302 L611
Text: NEC Electronics Inc. CMOS-8LH 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary April 1996 Description Figure 1. CMOS-8LH Package Options: BGA & QFP NEC's CMOS-8LH gate-array family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high
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35-micron)
A11169EU1V0DS00
F611
L302
L611
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transistor f422
Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for
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50-MICRON
PD658xx
transistor f422
transistor f423
f422 transistor
transistor f421
BV09
F423
fet 13187
RJ4B
L442
bvoe
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F611
Abstract: No abstract text available
Text: NEC Electronics Inc. CMOS-8LHD 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary Description April 1996 Figure 1. CMOS-8LHD Package Options: BGA & QFP NEC's CMOS-8LHD gate-array family combines cellbased-level densities with the fast time-to-market and low
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35-micron)
A10616EU1V0DS00
F611
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uPD65801
Abstract: UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813
Text: NEC Electronics Inc. CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, submicron gate arrays, targeted for applications requiring extensive integration and high speeds. The device
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PD65800
uPD65801
UPD65812
uPD65800
PD65810
PD65811
CMOS Transmission gate Specifications
uPD65806
UPD65804
uPD65802
uPD65813
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430413
Abstract: 300K-600K CMOS-9 equivalent L302 sh micron aerospace
Text: CMOS-9 3.3-VOLT, 0.35-MICRON CMOS GATE ARRAYS NEC Electronics Inc. July 1997 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required to develop devices for high-speed computer and
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35-MICRON
35-micron
A12634EU1V0DS00
430413
300K-600K
CMOS-9 equivalent
L302
sh micron aerospace
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bv0T
Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
Text: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high
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50-MICRON
PD658xx
bv0T
F423
FV06
RJ4B
83YL-9164B
"Single-Port RAM"
B00J
transistor f423
bewf
diode ru4d
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65630
Abstract: uPD7105 UART TTL buffer CMOS-6A 65640 65611 CMOS-6S uPD71054 NS16550A uPD71037
Text: DATA SHEET CMOS-6 1.0 Micron CMOS Gate Array Description Features CMOS-6 is NEC’s well-established channelless gate array family. The CMOS-6 family comprises 17 masters, which are available in a wide variety of package types including thin packages T-QFP , QFP with
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set63
65630
uPD7105
UART TTL buffer
CMOS-6A
65640
65611
CMOS-6S
uPD71054
NS16550A
uPD71037
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CD54HC10
Abstract: CD54HC10F3A CD54HCT10 CD54HCT10F3A CD74HC10 CD74HC10E CD74HCT10 HC10 HCT10
Text: [ /Title CD74 HC10, CD74 HCT10 /Subject (High Speed CMOS Logic Triple 3-Input NAND Gate) /Autho r () /Keywords (High Speed CMOS Logic Triple 3-Input NAND Gate, High Speed CMOS Logic Triple 3-Input NAND Gate, Harris Semi- CD54HC10, CD74HC10, CD54HCT10, CD74HCT10
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HCT10
CD54HC10,
CD74HC10,
CD54HCT10,
CD74HCT10
SCHS128C
HCT10
CD54HC10
CD54HC10F3A
CD54HCT10
CD54HCT10F3A
CD74HC10
CD74HC10E
CD74HCT10
HC10
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Untitled
Abstract: No abstract text available
Text: [ /Title CD74 HC10, CD74 HCT10 /Subject (High Speed CMOS Logic Triple 3-Input NAND Gate) /Autho r () /Keywords (High Speed CMOS Logic Triple 3-Input NAND Gate, High Speed CMOS Logic Triple 3-Input NAND Gate, Harris Semi- CD54HC10, CD74HC10, CD54HCT10, CD74HCT10
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CD54HC10,
CD74HC10,
CD54HCT10,
CD74HCT10
SCHS128C
HCT10
HCT10
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CD54HC10
Abstract: CD54HC10F3A CD54HCT10 CD54HCT10F3A CD74HC10E CD74HCT10 HC10 HCT10 CD74HC10
Text: [ /Title CD74 HC10, CD74 HCT10 /Subject (High Speed CMOS Logic Triple 3-Input NAND Gate) /Autho r () /Keywords (High Speed CMOS Logic Triple 3-Input NAND Gate, High Speed CMOS Logic Triple 3-Input NAND Gate, Harris Semi- CD54HC10, CD74HC10, CD54HCT10, CD74HCT10
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HCT10
CD54HC10,
CD74HC10,
CD54HCT10,
CD74HCT10
SCHS128C
HCT10
CD54HC10
CD54HC10F3A
CD54HCT10
CD54HCT10F3A
CD74HC10E
CD74HCT10
HC10
CD74HC10
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CD54HC10
Abstract: CD54HC10F3A CD54HCT10 CD54HCT10F3A CD74HC10 CD74HC10E CD74HCT10 HC10 HCT10
Text: [ /Title CD74 HC10, CD74 HCT10 /Subject (High Speed CMOS Logic Triple 3-Input NAND Gate) /Autho r () /Keywords (High Speed CMOS Logic Triple 3-Input NAND Gate, High Speed CMOS Logic Triple 3-Input NAND Gate, Harris Semi- CD54HC10, CD74HC10, CD54HCT10, CD74HCT10
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HCT10
CD54HC10,
CD74HC10,
CD54HCT10,
CD74HCT10
SCHS128C
HCT10
CD54HC10
CD54HC10F3A
CD54HCT10
CD54HCT10F3A
CD74HC10
CD74HC10E
CD74HCT10
HC10
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Untitled
Abstract: No abstract text available
Text: [ /Title CD74 HC10, CD74 HCT10 /Subject (High Speed CMOS Logic Triple 3-Input NAND Gate) /Autho r () /Keywords (High Speed CMOS Logic Triple 3-Input NAND Gate, High Speed CMOS Logic Triple 3-Input NAND Gate, Harris Semi- CD54HC10, CD74HC10, CD54HCT10, CD74HCT10
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CD54HC10,
CD74HC10,
CD54HCT10,
CD74HCT10
SCHS128C
HCT10
HCT10
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CD54HC10
Abstract: CD54HC10F3A CD54HCT10 CD54HCT10F3A CD74HC10 CD74HC10E CD74HCT10 HC10 HCT10 CD54HC10F
Text: [ /Title CD74 HC10, CD74 HCT10 /Subject (High Speed CMOS Logic Triple 3-Input NAND Gate) /Autho r () /Keywords (High Speed CMOS Logic Triple 3-Input NAND Gate, High Speed CMOS Logic Triple 3-Input NAND Gate, Harris Semi- CD54HC10, CD74HC10, CD54HCT10, CD74HCT10
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HCT10
CD54HC10,
CD74HC10,
CD54HCT10,
CD74HCT10
SCHS128C
HCT10
CD54HC10
CD54HC10F3A
CD54HCT10
CD54HCT10F3A
CD74HC10
CD74HC10E
CD74HCT10
HC10
CD54HC10F
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HC10
Abstract: CD54HC10 CD54HC10F3A CD54HCT10 CD54HCT10F3A CD74HC10 CD74HC10E CD74HCT10 HCT10
Text: [ /Title CD74 HC10, CD74 HCT10 /Subject (High Speed CMOS Logic Triple 3-Input NAND Gate) /Autho r () /Keywords (High Speed CMOS Logic Triple 3-Input NAND Gate, High Speed CMOS Logic Triple 3-Input NAND Gate, Harris Semi- CD54HC10, CD74HC10, CD54HCT10, CD74HCT10
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HCT10
CD54HC10,
CD74HC10,
CD54HCT10,
CD74HCT10
SCHS128C
HCT10
HC10
CD54HC10
CD54HC10F3A
CD54HCT10
CD54HCT10F3A
CD74HC10
CD74HC10E
CD74HCT10
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HCT10
Abstract: CD54HC10 CD54HC10F3A CD54HCT10 CD54HCT10F3A CD74HC10 CD74HC10E CD74HCT10 HC10
Text: [ /Title CD74 HC10, CD74 HCT10 /Subject (High Speed CMOS Logic Triple 3-Input NAND Gate) /Autho r () /Keywords (High Speed CMOS Logic Triple 3-Input NAND Gate, High Speed CMOS Logic Triple 3-Input NAND Gate, Harris Semi- CD54HC10, CD74HC10, CD54HCT10, CD74HCT10
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HCT10
CD54HC10,
CD74HC10,
CD54HCT10,
CD74HCT10
SCHS128C
HCT10
CD54HC10
CD54HC10F3A
CD54HCT10
CD54HCT10F3A
CD74HC10
CD74HC10E
CD74HCT10
HC10
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CD54HC10
Abstract: CD54HC10F3A CD54HCT10 CD54HCT10F3A CD74HC10 CD74HC10E CD74HCT10 HC10 HCT10
Text: [ /Title CD74 HC10, CD74 HCT10 /Subject (High Speed CMOS Logic Triple 3-Input NAND Gate) /Autho r () /Keywords (High Speed CMOS Logic Triple 3-Input NAND Gate, High Speed CMOS Logic Triple 3-Input NAND Gate, Harris Semi- CD54HC10, CD74HC10, CD54HCT10, CD74HCT10
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HCT10
CD54HC10,
CD74HC10,
CD54HCT10,
CD74HCT10
SCHS128C
HCT10
CD54HC10
CD54HC10F3A
CD54HCT10
CD54HCT10F3A
CD74HC10
CD74HC10E
CD74HCT10
HC10
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Untitled
Abstract: No abstract text available
Text: [ /Title CD74 HC10, CD74 HCT10 /Subject (High Speed CMOS Logic Triple 3-Input NAND Gate) /Autho r () /Keywords (High Speed CMOS Logic Triple 3-Input NAND Gate, High Speed CMOS Logic Triple 3-Input NAND Gate, Harris Semi- CD54HC10, CD74HC10, CD54HCT10, CD74HCT10
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CD54HC10,
CD74HC10,
CD54HCT10,
CD74HCT10
SCHS128C
HCT10
HCT10
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Untitled
Abstract: No abstract text available
Text: Product Brief — Microelectronics ATT656 Series CMOS Gate Arrays Features Description • 1.0 |j.m CMOS Si-gate triple-layer metal process technology; 0.75 |^m effective channel length The ATT656 series of CMOS gate arrays combines the leading edge technology necessary
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ATT656
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ATT65630
Abstract: 65630 ATT65654 ci 7495 ATT65636 ttl 7495 ATT65640 ATT65646 ATT65650 ATT65658
Text: Product Brief = AT&T F Microelectronics ATT656 Series CMOS Gate Arrays Features Description • 1.0 im CMOS Si-gate triple-layer metal process technology; 0.75 |xm effective channel length The ATT656 series of CMOS gate arrays combines the leading edge technology necessary
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ATT656
ATT65630
65630
ATT65654
ci 7495
ATT65636
ttl 7495
ATT65640
ATT65646
ATT65650
ATT65658
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d 65632
Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
Text: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products
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nec d 588
Abstract: nec naming rule nec product naming rule NEC CMOS-4
Text: CMOS-9 3.3-VO LT, 0 .35-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. Preliminary March 1995 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required
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35-MICRON
66MHz
nec d 588
nec naming rule
nec product naming rule
NEC CMOS-4
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Untitled
Abstract: No abstract text available
Text: NEC NEC Electronics Inc. CMOS-8LH 3.3-V olt, 0.5-M icron CMOS G ate Arrays Preliminary April 1996 Description Figure 1. CMOS-8LH Package Options: BGA & QFP NEC's CMOS-8LH gate-array family consists of ultra-high perform ance, sub-m icron gate arrays, targeted for
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35-micron)
b4275E5
0Qb6651
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D65842
Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
Text: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform ance, sub-micron gate arrays, targeted for applications
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jPD65800
D65842
diode ru4d
136-Pin
CMOS7
BV09
180 nm CMOS standard cell library Synopsys
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PD65000
Abstract: 8748 NEC CMOS-5 NEC nec 8748 94Q3 NEC CMOS-4
Text: SEC CMOS-5 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIM INARY Description The CM O S-5 gate arrays are low -pow er, high-speed integrated circu its fea tu ring 1.2-m icron silicon -ga te CMOS technology. The basic cell on the gate array chip consists o f six transistors, three p-channel and
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PD65000
000to
NECEL-000837
8748 NEC
CMOS-5 NEC
nec 8748
94Q3
NEC CMOS-4
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