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    CMOS GATE ARRAYS Search Results

    CMOS GATE ARRAYS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TE512S32-25LC Rochester Electronics LLC TE512S32 - Field Programmable Gate Array, CMOS, PQFP128 Visit Rochester Electronics LLC Buy
    TE505S16-40QC-G Rochester Electronics LLC TE505S16 - Field Programmable Gate Array, CMOS, PQFP208 Visit Rochester Electronics LLC Buy
    TE505S16-40QI Rochester Electronics LLC TE505S16 - Field Programmable Gate Array, CMOS, PQFP208 Visit Rochester Electronics LLC Buy
    TE505S16-25QC-G Rochester Electronics LLC TE512S32 - Field Programmable Gate Array, CMOS Visit Rochester Electronics LLC Buy
    TE512S32-40LC Rochester Electronics LLC TE512S32 - Field Programmable Gate Array, CMOS, PQFP128 Visit Rochester Electronics LLC Buy

    CMOS GATE ARRAYS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BU16000 Series

    Abstract: BU16503 BU25507 BU16513 BU16311 BU25309 16848 BU25306 BU25307 BU25308
    Text: CMOS Gate Array CMOS Gate Array High Speed CMOS Gate Array BU25000 Series The BU25000 series gate arrays have a Sea-of-Gates SOG structure fabricated with a 0.5 micro metre CMOS process. The BU25300 is the base family for 3V systems, and the BU25500 Series is the base sevies for the 5V systems.


    Original     		PDF BU25000 BU25300 BU25500 BU25306 BU25307 BU25308 BU25309 BU25310 BU25311 BU16000 Series BU16503 BU25507 BU16513 BU16311 BU25309 16848 BU25306 BU25307 BU25308

    F611

    Abstract: L302 L611
    Text: NEC Electronics Inc. CMOS-8LH 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary April 1996 Description Figure 1. CMOS-8LH Package Options: BGA & QFP NEC's CMOS-8LH gate-array family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high


    Original     		PDF 35-micron) A11169EU1V0DS00 F611 L302 L611

    pin diagrams of basic gates

    Abstract: BGA and QFP Package Nand gate Crystal Oscillator 272000 astro tool HQFP-208 MCM NAND qcm 5 sim 980 CE61
    Text: To Top / Lineup / Index Product Line-up FUJITSU Semicustom Products Semicustom Products Gate arrays Sea-of-Gate CMOS Macro-embedded type cell arrays CMOS Standard cell CMOS Semicustom microcontrollers QCM series* ASTRO NT Bi-CMOS SIM/PLL SERIES Bi-CMOS SAW PLL


    Original     		PDF

    CG46533

    Abstract: CG46713 CE46F10 CE46F20 CE46F30 CE46F40 CE46F50 CE46F60 CE46F70 BGA-35
    Text: November 1995 Edition 1.5 DATA SHEET CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 µm drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 µm drawn channel length, digital CMOS embedded gate array


    Original     		PDF CG/CE46 ASIC-DS-20084-11/95 CG46533 CG46713 CE46F10 CE46F20 CE46F30 CE46F40 CE46F50 CE46F60 CE46F70 BGA-35

    transistor f422

    Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
    Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for


    Original     		PDF 50-MICRON PD658xx transistor f422 transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe

    F611

    Abstract: No abstract text available
    Text: NEC Electronics Inc. CMOS-8LHD 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary Description April 1996 Figure 1. CMOS-8LHD Package Options: BGA & QFP NEC's CMOS-8LHD gate-array family combines cellbased-level densities with the fast time-to-market and low


    Original     		PDF 35-micron) A10616EU1V0DS00 F611

    transistor Bc 540

    Abstract: BC 241 BC 511 description of transistor bc 148 pf958 SLA6028 bc 148 transistor 107ps BC 247 transistor bc 548
    Text: PF958-02 SLA60000 Series High Density Gate Array ● 0.25µm CMOS Gate Array ● Low power consumption ● Covered from 99k to 2,519k raw gates • DESCRIPTION The SLA60000 Series are CMOS Gate Arrays which are adopting on 0.25µm silicon gate process with 3


    Original     		PDF PF958-02 SLA60000 107ps 107ps 270ps 1600ps transistor Bc 540 BC 241 BC 511 description of transistor bc 148 pf958 SLA6028 bc 148 transistor BC 247 transistor bc 548

    uPD65801

    Abstract: UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813
    Text: NEC Electronics Inc. CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, submicron gate arrays, targeted for applications requiring extensive integration and high speeds. The device


    Original     		PDF PD65800 uPD65801 UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813

    430413

    Abstract: 300K-600K CMOS-9 equivalent L302 sh micron aerospace
    Text: CMOS-9 3.3-VOLT, 0.35-MICRON CMOS GATE ARRAYS NEC Electronics Inc. July 1997 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required to develop devices for high-speed computer and


    Original     		PDF 35-MICRON 35-micron A12634EU1V0DS00 430413 300K-600K CMOS-9 equivalent L302 sh micron aerospace

    bv0T

    Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
    Text: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high


    Original     		PDF 50-MICRON PD658xx bv0T F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d

    sla6050

    Abstract: SLA6270 SLA6080 SLA6430 SLA6620 SLA6000 AA132 SLA6270* plcc F44-6 SLA6140
    Text: SLA6000 / - y .2 ' CMOS HIGH SPEED GATE ARRAY • • • • High Speed Silicon Gate CMOS Technology TTL and CMOS I/O Compatible High Output Drive Compatible Gate Densities from 513 to 6,206 Gates • DESCRIPTION The SLA6000 series consists of a group of 8 CMOS gate arrays with gate counts from 513 to 6,206 gates. The


    OCR Scan     		PDF SLA6000 SLA6000 F44-6 F52-6 F60-6 F60-5 F80-5 F100-5 M24-2 M28-2 sla6050 SLA6270 SLA6080 SLA6430 SLA6620 AA132 SLA6270* plcc F44-6 SLA6140

    BU16503

    Abstract: BU16307 BU16515 bu16531
    Text: CMOS Gate Arrays 0.6 /¿m CMOS Gate Array BU16K Family The ROHM BU16K family of CMOS gate array ICs are fabricated using ROHM’s unique 0.6 /¿m submicron process. These gate array are compatible with ROHM’s new ISM model and have reduced noise. Series line-up


    OCR Scan     		PDF BU16K BU16300 BU16500 BU16303 BU16309 BU16310 BU16311 BU16503 BU16508 BU16307 BU16515 bu16531

    Untitled

    Abstract: No abstract text available
    Text: Product Brief — Microelectronics ATT656 Series CMOS Gate Arrays Features Description • 1.0 |j.m CMOS Si-gate triple-layer metal process technology; 0.75 |^m effective channel length The ATT656 series of CMOS gate arrays combines the leading edge technology necessary


    OCR Scan     		PDF ATT656

    ATT65630

    Abstract: 65630 ATT65654 ci 7495 ATT65636 ttl 7495 ATT65640 ATT65646 ATT65650 ATT65658
    Text: Product Brief = AT&T F Microelectronics ATT656 Series CMOS Gate Arrays Features Description • 1.0 im CMOS Si-gate triple-layer metal process technology; 0.75 |xm effective channel length The ATT656 series of CMOS gate arrays combines the leading edge technology necessary


    OCR Scan     		PDF ATT656 ATT65630 65630 ATT65654 ci 7495 ATT65636 ttl 7495 ATT65640 ATT65646 ATT65650 ATT65658

    z63n

    Abstract: t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W
    Text: A m itsu b ish i ELECTRO N IC DEVICE GROUP P R E LIM IN A R Y M6008X 0.8 Jim CMOS GATE ARRAYS Mitsubishi M6008X Series 0.8 Jim CMOS Gate Arrays INTRODUCTION Mitsubishi offers sub-m icron CMOS Gate Arrays us­ ing a 0.8 micron drawn twin well silicon gate process


    OCR Scan     		PDF M6008X MDS-GA-02-03-91 z63n t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W

    sla7800

    Abstract: TTL 7490 7905 TL 7490 SLA7000 F44-6 SLA7160 SLA7220 SLA7340 SLA7490
    Text: S L A 7 0 0 0 s e r ie s CMOS HIGH SPEED GATE ARRAY •DESCRIPTION The SLA7000 Series consists of a group of 6 CMOS gate arrays with gate counts from 1,632 to 16,250 gates. The series is fabricated utilizing our 1.5 micron high speed CMOS silicon gate technology to achieve


    OCR Scan     		PDF SLA7000series SLA7000 sla7000s sla7800 TTL 7490 7905 TL 7490 F44-6 SLA7160 SLA7220 SLA7340 SLA7490

    nec d 588

    Abstract: nec naming rule nec product naming rule NEC CMOS-4
    Text: CMOS-9 3.3-VO LT, 0 .35-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. Preliminary March 1995 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required


    OCR Scan     		PDF 35-MICRON 66MHz nec d 588 nec naming rule nec product naming rule NEC CMOS-4

    RS flip flop IC

    Abstract: transistor 6bn T flip flop IC 74LS series logic gates 3 input or gate RS flip flop cmos RS FLIP FLOP LAYOUT 1 bit full adder 1 bit full adder with carry 1-Bit full adder 7400 2-input nand gate
    Text: MA Series 2.5 MICRON SILICON-GATE CMOS GATE ARRAYS ./m a t r a -HARRIS SEMICONDUCTOR JULY 1986 2.5/a/1 METAL LAYER HIGH SPEED CMOS GATE ARRAYS UP TO 25 MHz INTERNAL OPERATING FREQUENCY Features Description • HIGH SPEED CMOS : 2 NS/G ATE TYPICAL PROPAGATION DELAY.


    OCR Scan     		PDF 6S20U' RS flip flop IC transistor 6bn T flip flop IC 74LS series logic gates 3 input or gate RS flip flop cmos RS FLIP FLOP LAYOUT 1 bit full adder 1 bit full adder with carry 1-Bit full adder 7400 2-input nand gate

    m60013

    Abstract: M60016 m60011 M60014 z46n M60030 M60024 Z24N M60012 m60043
    Text: A m its u b is h i CMOS GATE ARRAYS ELECTRONIC DEVICE GROUP Mitsubishi CMOS Gate Arrays INTRODUCTION Mitsubishi offers three fami­ lies of CMOS gate arrays: 1.0 /im, 1.3 /j.m, and 2.0 ji.m, with usable gates ranging from 200 to 35,000. The 1.0 and 1.3 p.m devices are


    OCR Scan     		PDF MDS-GA-11-90-RK m60013 M60016 m60011 M60014 z46n M60030 M60024 Z24N M60012 m60043

    CG46533

    Abstract: . rp 700 pc -24 CG46833 CG46134 SQFP100 CE46F10 CE46F20 CE46F30 CE46F40 CE46F50
    Text: FUJITSU Novem ber 1995 Edition 1.5 DATA SHEET '• CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 im drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 urn drawn channel length, digital CMOS embedded gate array


    OCR Scan     		PDF CG/CE46 CG/CE46 374175b 001173b CG46533 . rp 700 pc -24 CG46833 CG46134 SQFP100 CE46F10 CE46F20 CE46F30 CE46F40 CE46F50

    Untitled

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. CMOS-8LH 3.3-V olt, 0.5-M icron CMOS G ate Arrays Preliminary April 1996 Description Figure 1. CMOS-8LH Package Options: BGA & QFP NEC's CMOS-8LH gate-array family consists of ultra-high perform ance, sub-m icron gate arrays, targeted for


    OCR Scan     		PDF 35-micron) b4275E5 0Qb6651

    Untitled

    Abstract: No abstract text available
    Text: PF108-51 S L A 5 0 0 0 s e r ie s CMOS GATE ARRAY # 3 Micron Dual Layer Metal # 5 Sizes #Fast Design Cycle • DESCRIPTION The SLA5000 series consists of a group of five CMOS gate arrays with gate counts from 413 to 3,082 gates. The series is fabricated utilizing our 3 micron high speed CMOS silicon gate technology to achieve propa­


    OCR Scan     		PDF PF108-51 SLA5000 SLA5120 SLA5210 SLA5300

    CG46713

    Abstract: CG46194 CG46533 CG46134 CG46104
    Text: FUJITSU Novem ber 1995 Edition 1.5 DATA S H E E T : CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 |im drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 urn drawn channel length, digital CMOS embedded gate array


    OCR Scan     		PDF CG/CE46 CG46713 CG46194 CG46533 CG46134 CG46104

    D65842

    Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
    Text: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform­ ance, sub-micron gate arrays, targeted for applications


    OCR Scan     		PDF jPD65800 D65842 diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys