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    CMOS EEPROM Search Results

    CMOS EEPROM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    X28C512DM-15/B Rochester Electronics LLC X28C512 - EEPROM, 64KX8, Parallel, CMOS Visit Rochester Electronics LLC Buy
    X28C512JI-12 Rochester Electronics LLC EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
    FM93CS46M8 Rochester Electronics LLC EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SO-8 Visit Rochester Electronics LLC Buy
    NM93C56EN Rochester Electronics LLC EEPROM, 128X16, Serial, CMOS, PDIP8, PLASTIC, DIP-8 Visit Rochester Electronics LLC Buy
    X28C512DM-15 Rochester Electronics LLC EEPROM, 64KX8, 150ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, CERDIP-32 Visit Rochester Electronics LLC Buy

    CMOS EEPROM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    0.18-um CMOS technology characteristics

    Abstract: atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology
    Text: RF CMOS RF cmos 0.18 Micron Technology Atmel's 0.18 micron RF CMOS process technology provides a low-cost solution for high-performance RF applications. Key Features Key Benefits • 1.8V CMOS Transistors • Low Power • 3.3V I/O • Low Cost • Embedded EEPROM


    Original     		PDF 5136B-05/06/1K 0.18-um CMOS technology characteristics atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology

    Untitled

    Abstract: No abstract text available
    Text: FM93C56 2K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The FM93C56 device is 2048 bits of CMOS non-volatile electrically erasable memory organized as 128x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS


    Original     		PDF FM93C56 128x16 FM93C56

    NM93C06

    Abstract: M08A MTC08
    Text: NM93C06 256-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The NM93C06 devices are 256 bits of CMOS non-volatile electrically erasable memory divided into 16 16-bit registers. They are fabricated using Fairchild Semiconductor's floating-gate CMOS


    Original     		PDF NM93C06 256-Bit NM93C06 16-bit M08A MTC08

    NM93C46

    Abstract: 93C46T M08A MTC08
    Text: NM93C46 1K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The NM93C46 devices are 1024 bits of CMOS non-volatile electrically erasable memory divided into 64 16-bit registers. They are fabricated using Fairchild Semiconductor's floating-gate CMOS


    Original     		PDF NM93C46 NM93C46 16-bit 93C46T M08A MTC08

    Untitled

    Abstract: No abstract text available
    Text: FM93C66 4K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The FM93C66 device is 4096 bits of CMOS non-volatile electrically erasable memory organized as 256x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS


    Original     		PDF FM93C66 256x16 FM93C66

    FM93C46

    Abstract: No abstract text available
    Text: FM93C46 1K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The FM93C46 device is 1024 bits of CMOS non-volatile electrically erasable memory organized as 64x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS


    Original     		PDF FM93C46 64x16 FM93C46

    25c08v

    Abstract: No abstract text available
    Text: CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power requirements. The CAT25C08/


    Original     		PDF CAT25C08, CAT25C16 8K/16K 32-byte CAT25C08/16 1024x8/2048x8 CAT25C08/ 25c08v

    FM93C56

    Abstract: FM93C56E FM93C56V M08A MTC08
    Text: SEMICONDUCTOR TM 2K-Bit Serial CMOS EEPROM FM93C56 2K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface Features The FM93C56 device is 2048 bits of CMOS non-volatile electri­ cally erasable memory organized as 128x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS


    OCR Scan     		PDF FM93C56 FM93C56 128x16 Write808, FM93C56E FM93C56V M08A MTC08

    FM93C66

    Abstract: FM93C66E FM93C66V M08A MTC08
    Text: SEM ICONDUCTOR TM 4K-Bit Serial CMOS EEPROM FM93C66 4K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface Features The FM93C66 device is 4096 bits of CMOS non-volatile electri­ cally erasable memory organized as 256x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS


    OCR Scan     		PDF FM93C66 FM93C66 256x16 FM93C66E FM93C66V M08A MTC08

    PL22V10-10N

    Abstract: PL22V10-10A
    Text: Product specification Philips Semiconductors Programmable Logic Devices CMOS programmable electrically erasable logic device PL22V10-10 FEATURES DESCRIPTION • Advanced CMOS EEPROM technology The Philips Semiconductors PL22V10-10 is a CMOS programmable electrically erasable


    OCR Scan     		PDF PL22V10-10 110mA PL22V10-10N PL22V10-10A

    64x16

    Abstract: 8DIP 28-DIP KM28C64B 128X16
    Text: FUNCTION GUIDE MEMORY ICs 2.5 EEPROM 2 K b it 64K bit Remark 16x16 1MHz CMOS Ext.-timed 8DIP/8SOP Now 1MHz CMOS Self-timed 8DIP/8SOP Now KM93C46/G/GD/I 64x16 1MHz CMOS Self-timed 8DIP/8SOP Now KM93C46V/VG/VGD/I 64x16 250KHZ CMOS 3-OV-Operation 8DIP/8SOP Now


    OCR Scan     		PDF KM93C06/G/GD/I KM93C07/G/GD/I 16x16 16x16 KM93C46/G/GD/I KM93C46V/VG/VGD/I 64x16 128x8 250KHZ 8DIP 28-DIP KM28C64B 128X16

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL253 CMOS Programmable Electrically Erasable Logic Device Features • ADVANCED CMOS EEPROM TECHNOLOGY ■ FPLA ARCHITECTURE ■ COMPATIBLE PERFORMANCE — tpD = 30ns max, to E = 30ns max SUPERSET REPLACEMENT FOR PLS153


    OCR Scan     		PDF PEEL253 PLS153 terms/10

    22CV10

    Abstract: No abstract text available
    Text: AMI PEEL 22CV10 Z SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device February 1993 Features General Description Advanced CMOS EEPROM Technology The AMI PEEL22CV10(Z) is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance,


    OCR Scan     		PDF 22CV10 200jiA PEEL22CV10 PEEL22CVV10 480KH 22CV10CZ)

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL173 CMOS Programmable Electrically Erasable Logic Device Features • FPLA ARCHITECTURE ■ ADVANCED CMOS EEPROM TECHNOLOGY — — — ■ LOW POWER CONSUMPTION — 35m A + 1 .OmA/MHz max ■ COMPATIBLE PERFORMANCE


    OCR Scan     		PDF PEEL173 PLS173

    mcm2018a

    Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan     		PDF A16685-7 EMTR1147 mcm2018a sun hold RAS 0610 cqq 765 RT IC HX 710B U256D

    PEEL programming

    Abstract: 22CV10Z-25 22CV10 22CV10A-10 PEEL22CV10 22CV10A PEEL 22CV10A-15 22CV10A-7 22GV10
    Text: PEEL 22GV10 Z A M SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device i February 1993 Features General Description Advanced CMOS EEPROM Technology High Performance with Low Power Consumption The AMI PEEL22C V10(Z) is a CMOS Program m able


    OCR Scan     		PDF 22CV10 PEEL programming 22CV10Z-25 22CV10A-10 PEEL22CV10 22CV10A PEEL 22CV10A-15 22CV10A-7 22GV10

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL C M O S 5SE D 4flMQ707 DOOQMl 2 Product Preview INTERNATIONAL CMOS TECHNOLOGY, INC. 7 PEElIM 20CG10-12/PEE! 20CG1 0-15 CMOS Programmable Electrically Erasable Logic Device Features • 1 Micron CMOS EEPROM Technology Architectural Flexibility


    OCR Scan     		PDF 4flMQ707 20CG10-12/PEE! 20CG1 12-configuration 105mA 20CG10-12 20CG10-15

    sun hold RAS 0610

    Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan     		PDF A16685-7 EMTR1147 sun hold RAS 0610 oki Logic Motorola transistor 7144 MSC2304 M5M41000

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data INTERNATIONAL CMOS TECHNOLOGY, INC. March 1991 PEEL 22CV10A CMOS Programmable Electrically Erasable Logic Device Features • Advanced CMOS EEPROM Technology Architectural Flexibility — 132 product term x 44 input AND array — Up to 22 inputs and 10 outputs


    OCR Scan     		PDF 22CV10A 12-configuration 110mA

    Untitled

    Abstract: No abstract text available
    Text: 37E J> INTERNATIONAL C M O S 40 40707 0000347 7 T-46-19-07 INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL 18CV8-15/PEEL™18CV8-20 CMOS Programmable Electrically Erasable Logic Devic6 Features • Architectural Flexibility Advanced CMOS EEPROM Technology — —


    OCR Scan     		PDF T-46-19-07 18CV8-15/PEELâ 18CV8-20 105mA 18CV8-15 15nsmax 50MHz 18CV8-20:

    Untitled

    Abstract: No abstract text available
    Text: FM93C46 1K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The FM93C46 device is 1024 bits of CMOS non-volatile electri­ cally erasable memory organized as 64x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS


    OCR Scan     		PDF FM93C46 FM93C46 64x16

    68HCXX

    Abstract: EEPROMs NM95C12 NM25C04
    Text: SPECIALTY Products CMOS EEPROM Selection Guide National Semiconductor SPECIALTY Products CMOS EEPROM Selection Guide General Description Features National Semiconductor offers a full line of CMOS EEPROMs. Some share the MICROWIRE Serial Interface such as the NM93C06 and the NM93CS06; others share


    OCR Scan     		PDF NM93C06 NM93CS06; NM24C02 NM24C08. NM95C12, NM25C04 NM93C46A NM95C12 976-bit 68HCXX EEPROMs

    IC 93c46

    Abstract: No abstract text available
    Text: INTERNATIONAL CMOS TECHNOLOGY, INC. 93C46 1,024-Bit Serial 5V only CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) Features • Advanced CMOS EEPROM Technology ■ Read/Write Non-volatile Memory — — — Single 5V supply operation 1,024 bits, 64 x 16 organization


    OCR Scan     		PDF 93C46 024-Bit TMS1000, IC 93c46

    80CXX

    Abstract: uPD75X
    Text: Preliminary Data INTERNATIONAL CMOS TECHNOLOGY, INC. 93CX56/93CX66 2,048/4,096-Bit CMOS Serial EEPROM with extended-voltage operation 2.5V to 6.5V Features Ideal For Low-density Data Storage • Advanced CMOS EEPROM Technology — — — ■ Read/Write Non-volatile Memory


    OCR Scan     		PDF 93CX56/93CX66 096-Bit 93CX56. 93CX56/93CX66 80CXX uPD75X