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    CMLDM7484 Search Results

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    CMLDM7484 Price and Stock

    Central Semiconductor Corp CMLDM7484-TR-PBFREE

    MOSFET N/P-CH 30V 0.45A SOT563
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    DigiKey CMLDM7484-TR-PBFREE Digi-Reel 76,115 1
    • 1 $0.43
    • 10 $0.364
    • 100 $0.43
    • 1000 $0.17138
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    CMLDM7484-TR-PBFREE Cut Tape 76,115 1
    • 1 $0.43
    • 10 $0.364
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    • 1000 $0.17138
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    CMLDM7484-TR-PBFREE Reel 75,000 3,000
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    Central Semiconductor Corp CMLDM7484 TR PBFREE

    Transistor MOSFET Complementary N-CH/P-CH 30V 450mA 6-Pin SOT-563 T/R - Tape and Reel (Alt: CMLDM7484 TR PBFRE)
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    Avnet Americas CMLDM7484 TR PBFREE Reel 6,000
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    Mouser Electronics CMLDM7484 TR PBFREE 348,517
    • 1 $0.3
    • 10 $0.266
    • 100 $0.216
    • 1000 $0.172
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    Central Semiconductor Corp CMLDM7484 TR

    Transistor MOSFET Array Dual N-Channel/P-Channel 30V 450mA 6-Pin SOT-563 T/R - Tape and Reel (Alt: CMLDM7484 TR)
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    Avnet Americas CMLDM7484 TR Reel 10 Weeks 3,000
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    Central Semiconductor Corp CMLDM7484TRPBFREE

    TRANSISTOR, SURFACE MOUNT, N / P - CHANNEL, ENHANCEMENT-MODE COMPLEMENTARY MOSFET, SOT-563 (Also Known As: CMLDM7484)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components CMLDM7484TRPBFREE 384
    • 1 $0.7
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    • 100 $0.35
    • 1000 $0.21
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    CMLDM7484TRPBFREE 384
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    CMLDM7484TRPBFREE 55
    • 1 $0.36
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    CMLDM7484TRPBFREE 55
    • 1 $0.36
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    • 100 $0.3
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    CMLDM7484 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CMLDM7484 Central Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 8V 450MA SOT-563 Original PDF
    CMLDM7484 TR Central Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET N/P-CH 30V 0.45A SOT-563 Original PDF
    CMLDM7484 TR PBFREE Central Semiconductor MOSFET N/P-CH 30V 0.45A SOT-563 Original PDF

    CMLDM7484 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8C7 marking

    Abstract: CMLDM7484
    Text: CMLDM7484 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7484 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for


    Original
    PDF CMLDM7484 OT-563 350mW OT-50mm2 28-July 100mA 8C7 marking CMLDM7484

    8C7 marking

    Abstract: CMLDM7484 8C7 SOT
    Text: CMLDM7484 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7484 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for


    Original
    PDF CMLDM7484 OT-563 350mW 27-January 100mA 8C7 marking CMLDM7484 8C7 SOT

    8C7 marking

    Abstract: CMLDM7484 8C7 SOT
    Text: CMLDM7484 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7484 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for


    Original
    PDF CMLDM7484 OT-563 350mW 100mA 8C7 marking CMLDM7484 8C7 SOT

    Untitled

    Abstract: No abstract text available
    Text: CMLDM7484 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7484 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for


    Original
    PDF CMLDM7484 OT-563 350mW 100mA

    Untitled

    Abstract: No abstract text available
    Text: CMLDM7484 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7484 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for


    Original
    PDF CMLDM7484 OT-563 350mW 100mA 28-January

    Untitled

    Abstract: No abstract text available
    Text: PROCESS CP794R Small Signal MOSFET Transistor P - Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Die Size 15.7 x 15.7 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 9.1 x 8.1 MILS Top Side Metalization Al-Si - 35,000Å


    Original
    PDF CP794R CEDM8004 CMLM0584 CMLDM7484 29-July