CLY10 Search Results

CLY10 Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CLY10		Infineon Technologies	GaAs FET		Original	PDF
CLY10		Siemens	RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide		Original	PDF
CLY10		Siemens	GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)		Original	PDF
CLY 10		TriQuint Semiconductor	RF Amplifier, General purpose amplifier, Single channel, Chip, 6000 MHz, SOT-223, 4-Pin		Original	PDF
CLY10		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
CLY10		Siemens	Transistors		Scan	PDF

CLY10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: CLY10 Datasheet High-Power Packaged GaAs FET Description: The CLY10 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable	Original	PDF	CLY10
Untitled Abstract: No abstract text available Text: CLY10 Datasheet High-Power Packaged GaAs FET Description: The CLY10 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable	Original	PDF	CLY10
cly10 Abstract: CLY 10 Text: CLY10 Datasheet High-Power Packaged GaAs FET Description: The CLY10 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable	Original	PDF	CLY10 CLY 10
CLY10 Abstract: gaas fet marking a CLY 10 04917 07096 FET marking code marking code 5 small signal GaAs FET Q62702-L94 siemens gaas fet Text: CLY 10 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz 28.5 dBm typ.	Original	PDF	Q62702-L94 CLY10 CLY10 gaas fet marking a CLY 10 04917 07096 FET marking code marking code 5 small signal GaAs FET Q62702-L94 siemens gaas fet
c639 Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423 Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05	Original	PDF	3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
transistor C639 Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W	Original	PDF	3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
CLY10 Abstract: No abstract text available Text: SIEMENS CLY10 GaAs FET D a t a s h e e t * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * P „1Tat Vn=3V, f=1,8GHz 28.5 dBm typ. * High efficiency better 55 % 3 p k S 2 1 ESD: V PSC5 I6 J	OCR Scan	PDF	CLY10 Q62702-L94 CLY10
Untitled Abstract: No abstract text available Text: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40	OCR Scan	PDF	023SbOS CGY50 OT-143 CGY40 CLY10 CGY52
diode S6 78A Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14	OCR Scan	PDF	O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
c639 Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04	OCR Scan	PDF	3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
BF963 Abstract: BF544 BF930 BF987 triode sot23 gaasfets cLY2 BF965 CFY30 cly5 Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors M axim um Ratings Characteristics T.=25°C NF mW G ps dB dB 40 50 30 30 30 30 30 10 10 200 200 200 200 200 200 200 200 200 29 25	OCR Scan	PDF	BF930 BF993 BF994S BF995 BF996S BF997 BF998 BF1005 BF1012 BF543 BF963 BF544 BF987 triode sot23 gaasfets cLY2 BF965 CFY30 cly5
CLY10 Abstract: No abstract text available Text: Infineon tac hoologia» G a A s F E T C L Y 1 0 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V ,/= 1.8 GHz, Pom = 28.5 dBm typ High efficiency better 55%	OCR Scan	PDF	Q62702-L94 CLY10 P-SOT223-4-2 CLY10