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    Am27C020

    Abstract: No abstract text available
    Text: a Advanced Micro Devices Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 90 ns ■ Low power consumption — Typical programming time of 32 seconds ■ Latch-up protected to 100 mA from -1 V to


    OCR Scan     		PDF Am27C020 28-pin 32-pln KS000010

    AMD 27C040

    Abstract: 27c040
    Text: Advanced Micro Devices Am27C040 4 Megabit 524,288 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — Typical programm ing tim e of 1 minute — 100 ns ■ Latch-up protected to 100 mA from -1 V to ■ Low power consumption


    OCR Scan     		PDF Am27C040 28-pin 32-pin 27C040 KS000010 14971C-9 AMD 27C040

    Untitled

    Abstract: No abstract text available
    Text: PRE LIM INARY Advanced Micro Devices Am27LV010/Am27LV01 OB 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single +3.3 V power supply — Regulated power supply 3.0 V-3.6 V — Unregulated power supply 2.7 V-3.6 V (for battery operated systems)


    OCR Scan     		PDF Am27LV010/Am27LV01 28-pin 32-pin 7341A-11 Am27LV010/Am27LV010B

    Untitled

    Abstract: No abstract text available
    Text: Am27C64 Advanced Micro Devices 64 Kilobit 8,192 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time — 45 ns ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to — 20 nA typical CMOS standby current ■ JEDEC-approved pinout


    OCR Scan     		PDF Am27C64 28-pin 32-pln 64-Kbit KS000010 11419C-9

    Am27C64

    Abstract: No abstract text available
    Text: Advanced Micro Devices Am27C64 8,192 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time-55 ns JEDEC-approved pinout ■ Low power consumption: -100 nA maximum standby current ±10% power supply tolerance ■ Programming voltage: 12.75 V ■


    OCR Scan     		PDF Am27C64 time-55 64K-bit,

    Am27C512s

    Abstract: AM27C512-155
    Text: ; ADV MICRO MEMORY 33E Q25752Ô DG2 Öö i a D T IAM3>4 - T - H b - 1 3 -2 9 Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • • • Fast access time — 70 ns Low power consumption: - 100 /¿A maximum standby current


    OCR Scan     		PDF Q25752Ã Am27C512 512K-bit, CDV028 T-46-13-29 T-46-13-25 G2S75SÃ CLV032 Am27C512s AM27C512-155

    Zl11

    Abstract: A12C
    Text: ADV MI CRO MEMORY 4ÔE » 0E5755Ö GÜ3 D4 b ö ö • AÎ1DM T—46—13-29 Advanced Micro Devices Am27C020 2 Megabit (262,144 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ 100% Flashrlte programming -typical programming time of 30 seconds Fast access time


    OCR Scan     		PDF 0E5755Ã T-46-13-29 Am27C020 28-pin 32-pln 27C020 DG304Ã 10205-006B Zl11 A12C

    Untitled

    Abstract: No abstract text available
    Text: Am27C64 8,192 X 8-Bit CMOS EPROM > 3 DISTINCTIVE CHARACTERISTICS • • • • • • • Fast a ccess lim e — 55 ns Low pow er consum ption: - 100 juA maxim um standby current Program m ing voltage: 12.5 V Single + 5 -V pow er supply • M -J JED EC-approved pinout


    OCR Scan     		PDF Am27C64 AIS-WCP-SM-2/89-0

    AM27C256-205

    Abstract: Am27C258 27C256-250 Am27c256-155 AM27C256DC AM27C256 AMD 27C256 255
    Text: Am27C256 32,768 X Advanced Micro Devices 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS Fast access time — 55 ns Low power consumption: - 100 maximum standby current Programming voltage: 12.5 V Single +5-V power supply • • • • JEDEC-approved pinout


    OCR Scan     		PDF Am27C256 256K-bit, Am27C2S6 AM27C256-205 Am27C258 27C256-250 Am27c256-155 AM27C256DC AMD 27C256 255

    am27c128

    Abstract: No abstract text available
    Text: a Advanced Micro Devices Am27C128 128 Kilobit 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS Latch-up protected to 100 mA from -1 V to Vcc +1 V • Fast access time — 45 ns High noise immunity ■ Low power consumption — 20 nA typical CMOS standby current


    OCR Scan     		PDF Am27C128 28-pin 32-pin 128K-bit KS000010 11420C-9

    AM27C512

    Abstract: AM27C512-90DC 127C512
    Text: ADV MICRO MEMORY b*4E D • 025752Ö 0D31c14b 3 0 e! ■ AMDM a Advanced Micro Devices Am27C512 512 Kilobit (65,536 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc + 1 V — 70 ns ■ High noise immunity


    OCR Scan     		PDF Am27C512 28-pin 32-pin KS000010 08140G-9 AM27C512-90DC 127C512

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO M E M O R Y b4E J> D2S7S2Ô m 0031^21 T3T Advanced Micro Devices Am27C128 128 Kilobit (16,384 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS Latch-up protected to 100 mA from -1 V to Vcc +1 V • Fast access time — 45 ns High noise immunity


    OCR Scan     		PDF Am27C128 28-pin 32-pin KS000010 11420C-9

    EPROM AM27256

    Abstract: EPROM 27256 DC amd Am27128A Am27128A EPROM
    Text: ADV I MICRO A m 2 7 6 4 A , A m A m 2 7 5 1 2 8 -B it E P R O M {MEMORY} 2 7 1 2 8 A , A m Tb D E B DES7S2fi DOSbbSS 2 7 2 5 6 F a m ily 7 % * /3 - 7 ? DATA S H E E T A M E N D M E N T In c re a s e d l-_ fo r th e A m 2 7 5 1 2 D C Characteristics table, page 8


    OCR Scan     		PDF MIL-STD-883, EPROM AM27256 EPROM 27256 DC amd Am27128A Am27128A EPROM

    Untitled

    Abstract: No abstract text available
    Text: a PRELIM INARY Advanced Micro Devices Am27LV010/Am27LV01 OB 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single +3.3 V power supply — Regulated power supply 3.0 V -3.6 V — Unregulated power supply 2.7 V-3.6 V (for battery operated systems)


    OCR Scan     		PDF Am27LV010/Am27LV01 28-pin 32-pin 7341A-11 Am27LV010/Am27LV010B

    AMD am2 socket pinout

    Abstract: 2575S5 amd AM2 pinout AMD socket AM2 pinout v020 pinout AM2 AMD AM27LV020
    Text: PRELIM IN ARY Advanced Micro Devices Am27LV020/Am27LV020B 2 Megabit 262,144 x 8-Bit Low Voltage CMOS EPROM DISTINCTIVE CHARACTERISTICS 100% Flashrite programming — Typical programming time of 32 seconds • Single 3.3 V power supply — Regulated power supply 3.0 V -3 .6 V


    OCR Scan     		PDF Am27LV020/Am27LV020B 28-pin 32-pin CLV032 08243D CLV032 AMD am2 socket pinout 2575S5 amd AM2 pinout AMD socket AM2 pinout v020 pinout AM2 AMD AM27LV020

    AM27LV010

    Abstract: No abstract text available
    Text: PRELIM INARY & Advanced Micro Devices Am27LV010/Am27LV010B 1 Megabit 131,072 x 8-Bit Low Voltage CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single +3.3 V power supply Fast Flashrlte programming — Typical programming time of 16 seconds — Regulated power supply 3.0 V -3.6 V


    OCR Scan     		PDF Am27LV010/Am27LV01 28-pin 32-pln S575E5 004bb5S 32-Pin 25752S 004bb5b AM27LV010

    D2575

    Abstract: AM27C256 AM27C256-55 AM27C256-70
    Text: AD V MICRO MEMORY t4E » • D257S2Ô G03n33 7SO CI Advanced Micro Devices Am27C256 256 Kilobit (32,768 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ Fast access time Latch-up protected to 100 m A from -1 V to Vcc + 1 V — 55 ns ■ Low power consumption


    OCR Scan     		PDF D257S2Ã Am27C256 28-pin 32-pin Am27MORY KS000010 08007G-10 D2575 AM27C256-55 AM27C256-70

    AM27C128

    Abstract: zi11
    Text: ADV MI C RO MEMORY 4 ÔE D 055752Û 003G327 1 «AMD4 T -4 6 -1 3-29 & Advanced Micro Devices Am27C128 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tlme-55 ns JEDEC-approved pinout ■ Low power consumption: -1 0 0 pA maximum standby current


    OCR Scan     		PDF 003G327 T-46-13â Am27C128 tlme-55 128K-bit, T-46-13-29 1420-009A zi11

    am27h10

    Abstract: No abstract text available
    Text: ADV MIC RO M E MO RY MfiE D • Ü25752Ô □ D 3 0 l)13 5 ■ A M D 1» T-46-13-29 A m 2 7 H 0 1 0 Advanced 1 Megabit (131,072 x 8-Bit) High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Industry's fastest -45ns 1 megabit CMOS EPROM ■ Versions available in industrial and military


    OCR Scan     		PDF T-46-13-29 -45ns Am27C010 Am27H010 withtheAm27C010 KS000010 2750-006A am27h10

    27C010-10

    Abstract: No abstract text available
    Text: FINAL a Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS Latch-up protected to 100 mA from -1 V to • Fast access time Vcc +1 V — 90 ns High noise immunity ■ Low power consumption — 20 nA typical CMOS standby current


    OCR Scan     		PDF Am27C010 32-pin KS000010 10205D-10 27C010-10

    Untitled

    Abstract: No abstract text available
    Text: a PRELIMINARY Advanced Micro Devices Am27LV020/Am27LV020B 2 Megabit 262,144 x 8-Bit Low Voltage CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single 3.3 V power supply — Regulated power supply 3.0 V - 3.6 V — Unregulated power supply 2.7 V -3 .6 V (battery-operated systems)


    OCR Scan     		PDF Am27LV020/Am27LV020B 28-pin 32-pin 7342A-10

    Am27CQ40

    Abstract: Am27C040
    Text: ADV MICRO MEMORY DSS7S2Ö aoa'ibis 3ÖE D T = 4 fe -1 3 -2 9 Am27C040 1 mamdm CI Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Fast access time - 90 ns Low power consumption - 20 nA typical CMOS standby current


    OCR Scan     		PDF Am27C040 28-pin 32-pln T-46-13-29 14971-006B Am27CQ40

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices Am27C64 64 Kilobit 8,192 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity ■ Fast access time — 45 ns ■ Low power consumption ■ Versatile features for simple Interfacing


    OCR Scan     		PDF Am27C64 28-pin 32-pin 64-Kbit KS000010 11419C-9

    am27C512 eprom

    Abstract: AM27C512-200 AM27C512-25O/BXA
    Text: Advanced Micro Devices A m 2 7 C 5 1 2 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to ■ Fast access time V cc + 1 V — 70 ns ■ High noise Immunity ■ Low power consumption ■ Versatile features for simple interfacing


    OCR Scan     		PDF 28-pln 32-pln Am27C512 KS000010 am27C512 eprom AM27C512-200 AM27C512-25O/BXA