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    CLASS A LINEAR HF Search Results

    CLASS A LINEAR HF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    CLASS A LINEAR HF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5CX1500A

    Abstract: 5cx1500 SK-840
    Text: SVETLANA TECHNICAL DATA 5CX1500A Power Pentode T The Svetlana 5CX1500A is a high-performance ceramic/metal power pentode designed for use as a highly linear Class AB1 linear amplifier. It may also be used as a high-gain Class C amplifier in HF radio frequency


    Original     		PDF 5CX1500A 5CX1500A 5cx1500 SK-840

    ferroxcube 4322 020 97171

    Abstract: philips ferroxcube 4c6 NCO8704 philips toroidal transformer 2222 852 47103 PHILIPS toroidal core 4322 020 97171 toroidal transformer for philips BLF244 NCO8705
    Text: APPLICATION NOTE Linear performance of BLF244 in S.S.B. class-A operation NCO8704 Philips Semiconductors Linear performance of BLF244 in S.S.B. class-A operation CONTENTS 1 INTRODUCTION 2 TESTCIRCUIT 3 TESTCONDITIONS 4 TESTRESULTS 5 CONCLUSION 1998 Mar 23


    Original     		PDF BLF244 NCO8704 BLF244 R150C SCA57 ferroxcube 4322 020 97171 philips ferroxcube 4c6 NCO8704 philips toroidal transformer 2222 852 47103 PHILIPS toroidal core 4322 020 97171 toroidal transformer for philips NCO8705

    philips ferroxcube 4c6

    Abstract: ferroxcube toroid philips toroid 4c6 ferroxcube 4C6 toroid core Philips Components, Soft Ferrites Data Handbook M BLF175 ferroxcube 31 toroid core 4C6 toroid Philips Components, Soft Ferrites Data Handbook soft ferrites philips handbook
    Text: APPLICATION NOTE A linear amplifier 1.6 − 28 MHz for 8 W PEP in class-A with the BLF175 NCO8705 Philips Semiconductors A linear amplifier (1.6 − 28 MHz) for 8 W PEP in class-A with the BLF175 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 GENERAL CONSIDERATIONS


    Original     		PDF BLF175 NCO8705 SCA57 philips ferroxcube 4c6 ferroxcube toroid philips toroid 4c6 ferroxcube 4C6 toroid core Philips Components, Soft Ferrites Data Handbook M BLF175 ferroxcube 31 toroid core 4C6 toroid Philips Components, Soft Ferrites Data Handbook soft ferrites philips handbook

    10AM11

    Abstract: 08.24.35 ic sheet data 9847 9508 ic 4521 90436 130-047
    Text: 10AM11 11 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM11 is a COMMON EMITTER transistor capable of providing 11 Watts of Class A, RF output power to1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 10AM11 10AM11 to1000 08.24.35 ic sheet data 9847 9508 ic 4521 90436 130-047

    10A060

    Abstract: 20989 78561 MAG 1832 55FT
    Text: 10A060 6 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A060 is a COMMON EMITTER transistor capable of providing 6 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 10A060 10A060 20989 78561 MAG 1832 55FT

    fe 8622

    Abstract: 422-371 23A025 521603 18896
    Text: 23A025 2.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A025 is a COMMON EMITTER transistor capable of providing 2.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 23A025 23A025 fe 8622 422-371 521603 18896

    23A017

    Abstract: 33797 4561 140452
    Text: 23A017 1.7 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A017 is a COMMON EMITTER transistor capable of providing 1.7 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 23A017 23A017 33797 4561 140452

    ic 4040

    Abstract: IC 7427 134179 IC 8256 10AM12 153637
    Text: 10AM12 12 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 10AM12 10AM12 150oC 200o--- ic 4040 IC 7427 134179 IC 8256 153637

    4435 ic

    Abstract: data sheet IC 4435 IC 2272 DATASHEET IC 7446 1140-17 02580 2482 TRANSISTOR data sheet ic 7446 IC 7446 A 158314
    Text: 80143 1.0 Watts, 15 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 80143 is a COMMON EMITTER transistor capable of providing 1.0 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF

    IC 7476

    Abstract: IC 7476 datasheet 7476 IC datasheet data sheet IC 7476 data sheet of ic 7476 ic 7476 data sheet ic 7840 7476 data sheet 10A030 58167
    Text: 10A030 3 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A030 is a COMMON EMITTER transistor capable of providing 3 Watts of Class A, RF Output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 10A030 10A030 IC 7476 IC 7476 datasheet 7476 IC datasheet data sheet IC 7476 data sheet of ic 7476 ic 7476 data sheet ic 7840 7476 data sheet 58167

    97942

    Abstract: 74929 Transistor 5503 231369 TRansistor A 940 10AM20 273157
    Text: 10AM20 20 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM20 is a COMMON EMITTER transistor capable of providing 20 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 10AM20 10AM20 Temperatures13 97942 74929 Transistor 5503 231369 TRansistor A 940 273157

    C 33725

    Abstract: 4501 ic 6483 10A015 080620 144089 040196 BVces 33970 34-41-50
    Text: 10A015 1.5 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A015 is a COMMON EMITTER transistor capable of providing 1.5 Watts of Class A, RF Output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 10A015 10A015 C 33725 4501 ic 6483 080620 144089 040196 BVces 33970 34-41-50

    10AM12

    Abstract: COB1
    Text: 10AM12 12 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 10AM12 10AM12 150oC 200output COB1

    ic 74682

    Abstract: 160852 085016 74682 8813 40507 10AM05 44050-7 172113 E+170968
    Text: 10AM05 5.0 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM05 is a COMMON EMITTER transistor capable of providing 5 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 10AM05 10AM05 ic 74682 160852 085016 74682 8813 40507 44050-7 172113 E+170968

    100227

    Abstract: NEL2012F03-24 8614
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR NEL2012F03-24 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: PACKAGE OUTLINE F03 5 W Class A, 16 W Class AB • USEABLE FROM 1.8 TO 2.0 GHz 2.8±0.2 • HIGH LINEAR GAIN: 13.5 dB Class A, 11.0 dB Class AB


    Original     		PDF NEL2012F03-24 NEL2012F03-24 24-Hour 100227 8614

    30054

    Abstract: transistor 30054 8560 cob 2a82 17052 30054 transistor 326970 Diode 2A8 150401 28438
    Text: 2A8 0.5 Watts, 20 Volts, Class A Linear to 2000 MHz GENERAL DESCRIPTION The 2A8 is a COMMON EMITTER transistor capable of providing 0.5 Watts of Class A, RF output power at 2000 MHz. This transistor is specifically designed for general Class A amplifier applicatons. It utilizes gold


    Original     		PDF

    67334

    Abstract: data sheet IC 74266 74266 IC 74160 IC 74160 DATA SHEET ic 74266 data sheet IC 7474 IC 4614 IC 7474 datasheet 55295
    Text: 23A005 0.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A005 is a COMMON EMITTER transistor capable of providing 0.5 Watt of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold


    Original     		PDF 23A005 23A005 Temper5376 67334 data sheet IC 74266 74266 IC 74160 IC 74160 DATA SHEET ic 74266 data sheet IC 7474 IC 4614 IC 7474 datasheet 55295

    69099

    Abstract: 75902 79121 23A008 23A008-2 305303
    Text: 23A008 0.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A008 is a COMMON EMITTER transistor capable of providing up to 0.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		PDF 23A008 23A008 Tempe5384 69099 75902 79121 23A008-2 305303

    transistor ft 960

    Abstract: 1000MP
    Text: 1000MP 0.6 Watts, 18 Volts, Class A Linear to 1150 MHz GENERAL DESCRIPTION The 1000MP is a COMMON EMITTER transistor capable of providing 0.6 Watt of Class A, RF output power to 1150 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization


    Original     		PDF 1000MP 1000MP 55FW-2 transistor ft 960

    1N4153

    Abstract: NEL2001 NEL200101-24 2.2 uf 50v electrolytic
    Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W • LOW IM DISTORTION: Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:


    Original     		PDF NEL200101-24 NEL200101-24 24-Hour 1N4153 NEL2001 2.2 uf 50v electrolytic

    EIMAC* 5CX1500A

    Abstract: 5CX1500A scans-048 DSAGER00032
    Text: 5CX1500A Power Pentode he Svetlana 5CX1500A is a highperformance ceram ic/m etal power pentode designed for use as a highly linear Class AB I linear amplifier. It may also be used as a high-gain Class C amplifier in HF radio frequency' industrial processing applications such as plasma


    OCR Scan     		PDF 5CX1500A EIMAC* 5CX1500A scans-048 DSAGER00032

    C 5478 transistor

    Abstract: No abstract text available
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES OUTLINE DIMENSIONS NEL2004F02-24 Units in mm HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched HIGH LINEAR GAIN: 12.0 dB Class A, 10.0 dB Class AB


    OCR Scan     		PDF NEL2004F02-24 NEL2004F02-24isan th-19 24-Hour C 5478 transistor

    C 5478 transistor

    Abstract: 7807 transistor transistor 5478 TRANSISTOR c 5478 LARGE SIGNAL IMPEDANCES "class AB Linear"
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 1.5 W Class A, 7 W Class AB PACKAGE OUTLINE F02 USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) HIGH LINEAR GAIN: 12.0 dB Class A, 10.0 dB Class AB


    OCR Scan     		PDF NEL2004F02-24 NEL2004F02-24 C 5478 transistor 7807 transistor transistor 5478 TRANSISTOR c 5478 LARGE SIGNAL IMPEDANCES "class AB Linear"

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR NEL2012F03-24 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: PACKAGE OUTLINE F03 5 W Class A, 16 W Class AB • USEABLE FROM 1.8 TO 2.0 GHz 2.8±0.2 • HIGH LINEAR GAIN: 13.5 dB Class A, 11.0 dB Class AB


    OCR Scan     		PDF NEL2012F03-24 NEL2012F03-24isan NEL2012F03-24 98B-0279 24-Hour