stec
Abstract: No abstract text available
Text: SL72A8M64M8M-C75xW U (Where x = CAS Latency; U selects RoHS Compliant, lead-free version.) 64M X 72 Bits (512MB) 200-Pin DDR SDRAM SO-DIMM with ECC (PC2100) FEATURES GENERAL DESCRIPTION • PC2100 Compliant (DDR266A 133MHz-7.5ns@CL = 2) (DDR266B 133MHz-7.5ns@CL = 2.5)
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SL72A8M64M8M-C75xW
512MB)
200-Pin
PC2100)
PC2100
DDR266A
133MHz-7
DDR266B
stec
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QVL21653
Abstract: SLOTTED OPTICAL SENSOR 2611 sensor
Text: SLOTTED OPTICAL SWITCH QVL21653 PACKAGE DIMENSIONS 3 2 .020 .50 .03 (.75) .023 (.60) XXXXXXX XX XXX .020 (.50) 4 1 SECTION X-X X XXXXXX XX XX X 1.150 (29.21) CL .177 (4.50) 2PLCS .276 (7.01) .398 (10.11) .138 (3.51) .638 (16.21) .200 (5.09) CL .350 (8.89)
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QVL21653
QVL2165OUT
DS300379
QVL21653
SLOTTED OPTICAL SENSOR
2611 sensor
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QVL25335
Abstract: No abstract text available
Text: SLOTTED OPTICAL SWITCH QVL25335 PACKAGE DIMENSIONS 3 2 .020 .50 .03 (.75) .023 (.60) XXXXXXX XX XXX .020 (.50) 4 1 SECTION X-X X XXXXXX XX XX X 1.150 (29.21) CL .177 (4.50) 2PLCS .276 (7.01) .398 (10.11) .138 (3.51) .638 (16.21) .200 (5.09) CL .350 (8.89)
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QVL25335
QVL25335
DS300380
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IGBT welding circuit
Abstract: No abstract text available
Text: CM300DU-34KA Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD KA-Series Module 300 Amperes/1700 Volts A B F TC MEASURED POINT G CL M T - (4 TYP.) N G2 Z E2 P E2 C2E1 C1 C E CL X Q G1 E1 AA LABEL R Y P Description:
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CM300DU-34KA
Amperes/1700
IGBT welding circuit
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Untitled
Abstract: No abstract text available
Text: CM800DU-12H Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD U-Series Module 800 Amperes/600 Volts A B F G CL T - (4 TYP.) M N Z P C E CL X LABEL R Q AA Y P Description: Powerex IGBTMOD™ Modules are designed for use in switching
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CM800DU-12H
Amperes/600
Discrete697-1800
CM800DU-12H
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CM600DU-24F
Abstract: No abstract text available
Text: CM600DU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD F-Series Module 600 Amperes/1200 Volts A TC MEASURED POINT B F G CL T - (4 TYP.) M N Z P C E X CL LABEL R Q AA Y P W(4 PLACES) Description: Powerex IGBTMOD™ Modules are
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CM600DU-24F
Amperes/1200
CM600DU-24F
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Untitled
Abstract: No abstract text available
Text: SG572288FG8EWUU April 26, 2010 Ordering Information Part Numbers Description Module Speed SG572288FG8EWDB 128Mx72 1GB , DDR2, 200-pin SO-DIMM, Registered, ECC, 128Mx8 Based, DDR2-400-333, 30.00mm, Green Module (RoHS-6 Compliant). PC2-3200 @ CL 3.0 SG572288FG8EWDG
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SG572288FG8EWUU
SG572288FG8EWDB
128Mx72
200-pin
128Mx8
DDR2-400-333,
PC2-3200
SG572288FG8EWDG
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Untitled
Abstract: No abstract text available
Text: CM200DU-24F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Dual IGBTMOD 200 Amperes/1200 Volts A T - (4 TYP.) D TC MEASURED POINT U (4 PLACES) G2 E2 B E CM CL E2 C2E1 J C1 E1 G1 Q H P Q H Description:
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CM200DU-24F
Amperes/1200
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dual DIODE 200A 600V
Abstract: CM200DU-24F
Text: CM200DU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Dual IGBTMOD 200 Amperes/1200 Volts TC MEASURING POINT A D F T (4 TYP.) G2 B E CM C2E1 H E2 CL E2 J E1 C1 H G1 U Q P Q N K K K Description:
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CM200DU-24F
Amperes/1200
dual DIODE 200A 600V
CM200DU-24F
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Untitled
Abstract: No abstract text available
Text: SG564288TG8NWUU May 7, 2008 Ordering Information Part Numbers Description Module Speed SG564288TG8NWDB 128Mx64 1GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 128Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS-6 Compliant), PC2-3200 @ CL 3.0
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SG564288TG8NWUU
SG564288TG8NWDB
128Mx64
200-pin
128Mx8
DDR2-400-333,
PC2-3200
SG564288TG8NWDG
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Untitled
Abstract: No abstract text available
Text: SG564568TG8NWUU May 6, 2008 Ordering Information Part Numbers Description Module Speed SG564568TG8NWDB 256Mx64 2GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 128Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS-6 Compliant), PC2-3200 @ CL 3.0
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SG564568TG8NWUU
SG564568TG8NWDB
256Mx64
200-pin
128Mx8
DDR2-400-333,
PC2-3200
SG564568TG8NWDG
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Untitled
Abstract: No abstract text available
Text: SG564283TG8NWUU1 June 18, 2008 Ordering Information Part Numbers Description Module Speed SG564283TG8NWDB1 128Mx64 1GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 64Mx16 Based, DDR2-400-333, 25.40mm, 22Ω DQ termination, Green Module (RoHS Compliant), PC2-3200 @ CL 3.0
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SG564283TG8NWUU1
SG564283TG8NWDB1
128Mx64
200-pin
64Mx16
DDR2-400-333,
PC2-3200
SG564283TG8NWDG1
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Untitled
Abstract: No abstract text available
Text: SG564288TG8NZUU April 14, 2008 Ordering Information Part Numbers Description Module Speed SG564288TG8NZDB 128Mx64 1GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 64Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS-6 Compliant), PC2-3200 @ CL 3.0
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SG564288TG8NZUU
SG564288TG8NZDB
128Mx64
200-pin
64Mx8
DDR2-400-333,
PC2-3200
SG564288TG8NZDG
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Untitled
Abstract: No abstract text available
Text: SG564128FG8NZUU March 4, 2009 Ordering Information Part Numbers Description Module Speed SG564128FG8NZDB 512Mx64 4GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 256Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0
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SG564128FG8NZUU
SG564128FG8NZDB
512Mx64
200-pin
256Mx8
DDR2-400-333,
PC2-3200
SG564128FG8NZDG
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Untitled
Abstract: No abstract text available
Text: SG564568FG8NWUU May 28, 2008 Ordering Information Part Numbers Description Module Speed SG564568FG8NWDB 256Mx64 2GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 128Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0
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SG564568FG8NWUU
SG564568FG8NWDB
256Mx64
200-pin
128Mx8
DDR2-400-333,
PC2-3200
SG564568FG8NWDG
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SG572648FG8EZIL
Abstract: No abstract text available
Text: SG572648FG8EZUU July 29, 2008 Ordering Information Part Numbers Description Module Speed SG572648FG8EZDB 64Mx72 512MB , DDR2, 200-pin SO-RDIMM, Registered, ECC, 64Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS-6 Compliant). PC2-3200 @ CL 3.0
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SG572648FG8EZUU
SG572648FG8EZDB
64Mx72
512MB)
200-pin
64Mx8
DDR2-400-333,
PC2-3200
SG572648FG8EZDG
SG572648FG8EZIL
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier : Samsung electro-mechanics Samsung P/N : CL03C200JA3GNNH Product : Multi-layer Ceramic Capacitor Description : CAP, 20㎊, 25V, ±5%, C0G, 0201 A. Samsung Part Number ① Series CL 03 C 200 J A 3 G N N H ① ② ③
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CL03C200JA3GNNH
12/-0hrs
500Mohm
25Mohm
48/-0hrs
1000Mohm
50Mohm
10sec.
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier : Samsung electro-mechanics Samsung P/N : CL21C201JBANFNC Product : Multi-layer Ceramic Capacitor Description : CAP, 200㎊, 50V, ±5%, C0G, 0805 A. Samsung Part Number ① Series CL 21 C 201 J B A N F N C ① ② ③
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CL21C201JBANFNC
12/-0hrs
500Mohm
25Mohm
48/-0hrs
1000Mohm
50Mohm
10sec.
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N : CL03C200JA3GNNC • Product : Multi-layer Ceramic Capacitor • Description : CAP, 20㎊, 25V, ±5%, C0G, 0201 A. Samsung Part Number ① Series CL 03 C 200 J A 3 G N N C ① ② ③
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CL03C200JA3GNNC
500Mohm
25Mohm
48/-0hrs
1000Mohm
50Mohm
10sec.
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IRFD2Z3
Abstract: IRFD2Z0 A0025 43538
Text: Standard Power MOSFETs- IRFD2Z0, IRFD2Z1, IRFD2Z2, IRFD2Z3 File N u m b e r 2329 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -CHANNEL EN HANCEM ENT MODE 0.30 A and Cl.32 A, 150 V- 200 V
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9ZCS-33741
92CS-45S39
IRFD2Z3
IRFD2Z0
A0025
43538
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ STP10NB20 STP10NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET V TYPE S TP10N B20 STP10N B20FP • . . . . dss 200 V 200 V R D S(on) Id < 0.4 0 Q. < 0.4 0 Cl 10 A 6 A TYPICAL RDS(on) = 0.3 EXTREMELY HIGH dv/dt CAPABILITY
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STP10NB20
STP10NB20FP
TP10N
STP10N
B20FP
STP10NB20/FP
O-22QFP
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bad sec lar
Abstract: No abstract text available
Text: I p|-0 mationa I 9.1554 Provisional Data Sheet No. PD- M R Rectifier HEXFET POWER MOSFET IRFN9240 N -C H A N N E L -200 Volt, 0.51 Cl HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi
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F923
Abstract: IRF9230 IRF9232 IRF9231 IRF9233 transistors bipolar
Text: _ Rugged Power MOSFETs File Number IRF9230, IRF9231, IRF9232, IRF9233 2226 Avalanche-Energy-Rated P-Channel Power MOSFETs TERMINAL DIAGRAM -5.5 A and -6.5 A, -150 V and -200 V rDs on = 0.8 i l and 1.2 Cl D Features: • ■ ■ ■ • S ingle pulse avalanche e n ergy ra ted
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IRF9230,
IRF9231,
IRF9232,
IRF9233
IRF9232
IRF9233
92CS-4331I
92CS-43305
F923
IRF9230
IRF9231
transistors bipolar
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QML-38534
Abstract: hxa 400
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED 99-02-02 K.A. Cottongim Table I; Changed the max limit for the Capacitve load test (Cl ) from 200 |xf to 100 |xf. Redrew entire document, -s ld _ REV SHEET REV SHEET REV STATUS REV A A A A
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ASA2812D/CH
QML-38534
hxa 400
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