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    CJ6 DIODE Search Results

    CJ6 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    CJ6 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Cj45

    Abstract: S3028 S30-28 CJ6 DIODE
    Text: S3028 SILICON ABRUPT VARACTOR DIODE DESCRIPTION: The ASI S3028 is a Designed for use in general purpose filter and oscillator applications. PACKAGE STYLE 51 FEATURES: • Blue Cathode dot • Hermetic sealed Package MAXIMUM RATINGS IF 10 mA VR 50 V PDISS 1.5 W @ TC = 25 °C


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    S3028 S3028 Cj45 S30-28 CJ6 DIODE PDF

    step recovery diode

    Abstract: "Step Recovery Diode" 5082-0153 CJ6 DIODE
    Text: 5082-0153 GLASS PACKAGE STEP RECOVERY DIODE DESCRIPTION: PACKAGE STYLE 15 The ASI 5082-0153 is a Silicon Step Recovery Diode Designed for Synthesiser and Sampler Applications Requiring a High Performance to Cost Ratio. FEATURES INCLUDE: • Transition Time 95 pS


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    step recovery diode

    Abstract: 5082-0800 "Step Recovery Diode"
    Text: 5082-0800 SILICON STEP RECOVERY DIODE DESCRIPTION: The ASI 5082-0800 is a Silicon Step Recovery Diode Designed as a Frequency Multiplier with S-Band Output Frequencies. PACKAGE STYLE 50 FEATURES INCLUDE: • Replacement for HP 5082-0800 • POUT = 10 W typ. @ 4 GHz X 2


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    step recovery diode

    Abstract: No abstract text available
    Text: 5082-0335 SILICON STEP RECOVERY DIODE DESCRIPTION: The ASI 5082-0335 is a Silicon Step Recovery Diode Designed as a X 8 Frequency Multiplier with X-Band Output Frequencies. FEATURES INCLUDE: PACKAGE STYLE 51 • Replacement for HP 5082-0335 • POUT = 30 mW min. @ 16 GHz X 8


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    -65OC ASI30257 step recovery diode PDF

    SMMD805-SOD323

    Abstract: SMMD835-SOD323 SMMD805SO SMMD832-SOD323 smmd840 multiplier comb generator SMMD-840 0204 diode SMMD805SOD
    Text: SURFACE MOUNT SMMD SILICON MULTIPLIER SERIES SRD DIODES IN SOD 323 PACKAGE FEATURES • Low Rs • Transition Times Down to 65 ps • Higher Efficiency • Hi-Rel Available (MIL-S-19500, MIL-STD-750) APPLICATIONS • Comb Generator • Multiplier • Pulse Generator


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    MIL-S-19500, MIL-STD-750) OD323 SMMD805-SOD323 SMMD810-SOD323 SMMD820-SOD323 SMMD830-SOD323 94O86 SMMD835-SOD323 SMMD805SO SMMD832-SOD323 smmd840 multiplier comb generator SMMD-840 0204 diode SMMD805SOD PDF

    Untitled

    Abstract: No abstract text available
    Text: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com Step Recovery Diodes Part Number Case Style Vbr(min) Ir= 10µA (volts) MP4021 MP4022 MP4023 MP4025 MP4026 MP4031 MP4032 MP4033 MP4035 MP4036


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    MP4021 MP4022 MP4023 MP4025 MP4026 MP4031 MP4032 MP4033 MP4035 MP4036 PDF

    step recovery diode

    Abstract: 5082-0112 sampler "Step Recovery Diode"
    Text: 5082-0112 GLASS PACKAGE STEP RECOVERY DIODE DESCRIPTION: The 5082-0112 is a Silicon Step Recovery Diode Designed for Synthesiser and Sampler Applications Requiring a High Performance to Cost Ratio. PACKAGE STYLE 01A FEATURES INCLUDE: • Transition Time 90 pS Typical


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    ASI30263 step recovery diode 5082-0112 sampler "Step Recovery Diode" PDF

    CJ6 DIODE

    Abstract: step recovery diode
    Text: 5082-0810 SILICON STEP RECOVERY DIODE DESCRIPTION: The ASI 5082-0810 is a Silicon Step Recovery Diode Designed as a Frequency Multiplier with S-Band Output Frequencies. PACKAGE STYLE 51 FEATURES INCLUDE: • Replacement for HP 5082-0810 • POUT = 4 W typ. @ 4 GHz X 2


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    -65OC ASI30258 CJ6 DIODE step recovery diode PDF

    MMD0840

    Abstract: mmd805 SMMD-840 SMMD-805 MMD-810 step recovery diode 832 MMD-840 MMD-835 MMD-805 SMMD830
    Text: Spice Model for Metelics Step Recovery Diodes 1 of 2 Spice does not include the Transition Time in the diode model. The parameter TT in spice is the minority carrier life time. Model for MMD805 .MODEL D_805 IS=500.0E-15 N=1.3 RS=0.13 CJ0=4.55E-12 VJ=0.5 M=0.235 XTI=3.0 EG=1.12


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    MMD805 0E-15 55E-12 10E-6 30E-9) MMD-805, SMMD805 MMD-810, SMMD810 MMD-820, MMD0840 mmd805 SMMD-840 SMMD-805 MMD-810 step recovery diode 832 MMD-840 MMD-835 MMD-805 SMMD830 PDF

    step recovery diodes

    Abstract: MP4026 MP4063 MP4023 MP4033 MP4025 MP4022 MP4041 MP4043 MP4032
    Text: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com Step Recovery Diodes Part Number Case Style Vbr(min) Ir= 10µA (volts) MP4021 MP4022 MP4023 MP4025 MP4026 MP4031 MP4032 MP4033 MP4035 MP4036


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    MP4021 MP4022 MP4023 MP4025 MP4026 MP4031 MP4032 MP4033 MP4035 MP4036 step recovery diodes MP4026 MP4063 MP4023 MP4033 MP4025 MP4022 MP4041 MP4043 MP4032 PDF

    diode cross reference

    Abstract: 5082-0833 5082-0815 diode 725 IR 733 5082-0825 HP STEP RECOVERY DIODES 5082-0840 5082-0153 5082-0151
    Text: ASRD 700 SERIES GLASS PACKAGE STEP RECOVERY DIODE DESCRIPTION: PACKAGE STYLE 01A The ASRD 700 Series of Step Recovery Diodes are Designed for General Purpose VCO and Sampler Applications. FEATURES INCLUDE: • Transition Time as Low as 70 pS • Hermetic Glass Package


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    STEP RECOVERY

    Abstract: step recovery diode "Advanced Semiconductor, Inc" SOD 323 diode 830 ADVANCED SEMICONDUCTOR CJ6 DIODE
    Text: ASRD 800 SERIES SURFACE MOUNT STEP RECOVERY DIODE DESCRIPTION: The ASRD 800 Series of Step Recovery Diodes are Designed for Synthesiser and Sampler Applications Requiring a High Performance to Cost Ratio. PACKAGE STYLE SOD- 323 FEATURES INCLUDE: • Transition Time as Low as 70 pS


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    OD323 OT-23 STEP RECOVERY step recovery diode "Advanced Semiconductor, Inc" SOD 323 diode 830 ADVANCED SEMICONDUCTOR CJ6 DIODE PDF

    SOD 323 diode 830

    Abstract: step recovery diode CJ6 DIODE U 806 "step recovery diode" 1.7 pf
    Text: ASRD 800 SERIES SURFACE MOUNT STEP RECOVERY DIODE DESCRIPTION: The ASRD 800 Series of Step Recovery Diodes are Designed for Synthesiser and Sampler Applications Requiring a High Performance to Cost Ratio. PACKAGE STYLE SOD- 323 FEATURES INCLUDE: • Transition Time as Low as 70 pS


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    OD323 OT-23 SOD 323 diode 830 step recovery diode CJ6 DIODE U 806 "step recovery diode" 1.7 pf PDF

    MLP7121

    Abstract: MicroMetrics MLP7130 MLP7100 MLP7101 MLP7102 MLP7110 MLP7111 MLP7112 MLP7120 MLP7130
    Text: Limiter Diodes Description The MicroMetrics MLP 7100 series Limiter diodes are specially processed PIN diodes with a thin intrinsic region designed for use in passive or active limiters over the entire range of frequencies from 100 MHz to beyond 20 GHz. The different “I” region thicknesses and capacitances provide variable threshold and leakage power levels and power handling capability.


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    DH60034

    Abstract: DH60033 DH60106 DH60036 DH60056 DH60035 EH60033 M208
    Text: SILICON PIN DIODES Microwave applications SILICON LIMITER PIN DIODES Description These passivated mesa PIN diodes have a thin I layer. This series of diodes is available as chips and in hermetic ceramic packages. They operate as power dependent variable resistances and provide


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    EH60033 EH60034 EH60035 EH60036 EH60037 EH60052 EH60053 EH60054 EH60055 EH60056 DH60034 DH60033 DH60106 DH60036 DH60056 DH60035 M208 PDF

    DH60034

    Abstract: No abstract text available
    Text: SILICON PIN DIODES Microwave applications SILICON LIMITER PIN DIODES Description These passivated mesa PIN diodes have a thin I layer. This series of diodes is available as chips and in hermetic ceramic packages. They operate as power dependent variable resistances and provide


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    Ku band limiter

    Abstract: GC4702 RF limiter PIN diode band Limiter GC4700 pin diode limiter GC4701 GC PIN DIODE MICROSEMI 4741 attenuator limiter
    Text: TOC Control Devices LIMITER DIODES DESCRIPTION APPLICATIONS The GC4700 series diodes are specially processed PIN diodes designed for use in passive or active limiters at frequencies through Ku band. A diode limiter is a power-sensitive variable attenuator


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    GC4700 GC4721 GC4701, Ku band limiter GC4702 RF limiter PIN diode band Limiter pin diode limiter GC4701 GC PIN DIODE MICROSEMI 4741 attenuator limiter PDF

    MLP7100

    Abstract: MicroMetrics MLP7130 MLP7121 MLP7122 MLP7120 MLP7101 MLP7102 MLP7110 MLP7111 MLP7112
    Text: Control Devices: MLP 7100 Series Limiter Diodes Applications The MLP 7100 series limiters are for use in waveguides, coax, microstrip or stripline. Single or cascade devices may be used depending on power levels. Features • Low Loss • Greater Bandwidth


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    nanosecond pulse generator

    Abstract: GC2521 g8tb JVC 0J "step recovery diode" 1.7 pf GC2510 7S11 42nH step recovery diodes
    Text: LO RA L fllCROUAVE-FSI SU D • 5 5 0 0 1 3 0 0 0 0 0 4 5 0 5T7 STEP RECOVERY DIODES DESCRIPTION APPLICATIONS The GC2500 series step recovery diodes are epitaxial silicon varactors which provide high output power and efficiencies in harmonic generator applications.


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    GC2500 nanosecond pulse generator GC2521 g8tb JVC 0J "step recovery diode" 1.7 pf GC2510 7S11 42nH step recovery diodes PDF

    DH 636

    Abstract: dh 632
    Text: SILICON UP-CONVERTER VARACTORS These varactors are designed for up-conversion mixing and param etric m odulation applications. P ackag ed diodes C haracteristics at 2 5 °C Fr e q u e n c y Breakdown J unctio n V oltage C apacitance v br Test C onditions N/A


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    GC3300

    Abstract: GC3307 gc3306 GC3305
    Text: LORAL Î1ICROUAVE-FS I SIE D • T-07-11 5 5 0 0 13 0 O O O G M b E T2fl HARMONIC GENERATOR VARACTORS DESCRIPTION APPLICATIONS The GC3300 Series of Multiplier Varactors offer high break­ down voltage, lower transition time and lower capacitances than available with GC3200 Series. This is accomplished by


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    000G4b2 T-07-11 GC3300 GC3200 GC-3300 -90-rM GC3307 gc3306 GC3305 PDF

    AS11D

    Abstract: AS63B
    Text: STEP RECOVERY DIODES SRD'S TYPE (1) NUMBER AS11A AS11B AS11C AS11D AS12A AS12B AS12C AS12D AS21A AS21B AS21C AS21D AS22A AS22B AS22C AS22D AS31A AS31B AS31C AS31D AS32A AS32B AS32C AS32D AS41A AS41B AS41C AS41D AS42A AS42B AS42C AS42D AS43A AS43B AS43C AS43D


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    AS11A AS11B AS11C AS11D AS12A AS12B AS12C AS12D AS21A AS21B AS11D AS63B PDF

    Untitled

    Abstract: No abstract text available
    Text: Step Recovery Diodes, Multichip SRD and SRD Chips — ALPHA IND/ S E M I C O N D U C T O R MAE D 05flS443 O D G i a b b Features tia « alp T D 1 - M • Low Transition Time ■ High Cutoff Frequency ■ High Reliability Description Alpha Step Recovery Diodes SRD are oxide passi­


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    05flS443 DVB6870-06 DVB6870-12 DVB6870-18 DVB6871 DVB6871-12 DVB6871-18 DVB6872-06 DVB6872-12 PDF

    DVB6723-04

    Abstract: dvb6101 HP STEP RECOVERY DIODES CVB1015-12 CVB1015-06 CVB1015-18 CVB1030-06 CVB1030-12 CVB1030-18 CVB1045-18
    Text: Step Recovery Diodes, Multichip SRD and SRD Chips — ALPHA IND/ S E M I C O N D U C T O R MAE D 05flS443 O D G i a b b Features tia « alp T D 1 - M • Low Transition Time ■ High Cutoff Frequency ■ High Reliability Description Alpha Step Recovery Diodes SRD are oxide passi­


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    05flS443 DVB6871 DVB6871-12 DVB6871-18 DVB6872-06 DVB6872-12 DVB6723-04 dvb6101 HP STEP RECOVERY DIODES CVB1015-12 CVB1015-06 CVB1015-18 CVB1030-06 CVB1030-12 CVB1030-18 CVB1045-18 PDF