Untitled
Abstract: No abstract text available
Text: Step Recovery Diodes, Multichip SRD and SRD Chips — ALPHA IND/ S E M I C O N D U C T O R MAE D 05flS443 O D G i a b b Features tia « alp T D 1 - M • Low Transition Time ■ High Cutoff Frequency ■ High Reliability Description Alpha Step Recovery Diodes SRD are oxide passi
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05flS443
DVB6870-06
DVB6870-12
DVB6870-18
DVB6871
DVB6871-12
DVB6871-18
DVB6872-06
DVB6872-12
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DVB6723-04
Abstract: dvb6101 HP STEP RECOVERY DIODES CVB1015-12 CVB1015-06 CVB1015-18 CVB1030-06 CVB1030-12 CVB1030-18 CVB1045-18
Text: Step Recovery Diodes, Multichip SRD and SRD Chips — ALPHA IND/ S E M I C O N D U C T O R MAE D 05flS443 O D G i a b b Features tia « alp T D 1 - M • Low Transition Time ■ High Cutoff Frequency ■ High Reliability Description Alpha Step Recovery Diodes SRD are oxide passi
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05flS443
DVB6871
DVB6871-12
DVB6871-18
DVB6872-06
DVB6872-12
DVB6723-04
dvb6101
HP STEP RECOVERY DIODES
CVB1015-12
CVB1015-06
CVB1015-18
CVB1030-06
CVB1030-12
CVB1030-18
CVB1045-18
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DMJ3086
Abstract: DMJ4317 DME4750-000 DMF3068-000 mip 290 dmf5818 DMF6554-000 DME3040-000 DMJ3181-000 DMF3291-000
Text: ALPHA IN»/ S E M I C O N D U C T O R 33E D • Q S 6 S H M B 0 0 0 0 7 5 4 7 ■ ALP Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes : ^ L Features \ ■ Ideal for MIC Low 1/f Noise Low Intermodi Intermodulation Distortion Low Turn On Hermetically Sealed Packages
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DMV3946-000
DMB4500-000
DMB4501-000
DMB6780-000
DMB3000-000
DMB6782-000
DMB3001-000
DMB6781-000
DMB3003-000
DMB3004-000
DMJ3086
DMJ4317
DME4750-000
DMF3068-000
mip 290
dmf5818
DMF6554-000
DME3040-000
DMJ3181-000
DMF3291-000
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DMG-6414A
Abstract: DMF3068 DMF4384 diodos led DMH6570 dmj4317 DMF3243 DMF5847 DMJ4708 dmf5818
Text: 0585443 ALPHA ALPHA ~Ü3 DSflSMM3'DGGG3Sl S | ~ D J‘ - Q ' 7 —0 1 Silicon Beam-Lead and Chip Schottky Barrier INC/ SEMICONDUCTOR Mixer Diodes \ n i - ' i - =:- V] Features :IT • Ideal for MIC • Low 1/f Noise • Low Intermodulation Distortion • Low Turn On
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DME3256-000
Abstract: DMF6554-000 DMB2855-000 DMJ3102-000 132-042 DMJ4317-000 DMJ3086-000 DMJ3086 DME3014-000 silicon di for microwave diode mixer
Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes ALPHA IND/ S E M I C O N D U C T O R _ 4ÛE D • 0 S Ô S 4 4 3 0 0 0 1 1 Q S ¿145 ■ ALP ék . Features '^ k \ / T *07*07 ^ / ■ Ideal for MIC ■ Low 1/f Noise Low Intermodulation Distortion Low Turn On
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DMB2853-000
DMB2854-000
DMB2855-000
DMB2856-000
DMB6780-000
DMB6782-000
DMB3000-000
DMB3001-000
DMB6781-000
DMB3003-000
DME3256-000
DMF6554-000
DMJ3102-000
132-042
DMJ4317-000
DMJ3086-000
DMJ3086
DME3014-000
silicon di for microwave diode mixer
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varactor alpha
Abstract: DVG51 x-band varactor diode
Text: ALPHA IND/ S E M I C O N D U C T O R 4flE D • D 5 Ô 5 44 3 GG Ü1 32 Ö 104 * A L P GaAs Hyperabrupt Tuning Diodes ' T ' ö ‘7 ' 10' Features ■ ■ ■ ■ ■ ■ Description Alpha's GaAs hyperabrupt tuning varactors feature high Q up to 5,000 with constant gamma of 1.0 and 1.25
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DDB-4503
Abstract: KA band detector
Text: 0585443 ALPHA ~0Ì IND/ SEMICONDUCTOR 03E 00 37 3 T-07-0 7 D eT | 05A5443 0D0D373 4 Silicon Schottky Barrier Detector Diodes -u r- • f e : '/- .- /- •: > Features • Low 1/f Noise • Bonded Junctions for Reliability • Planar Passivated Beam-Lead and Chip Construction
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T-07-0
05A5443
0D0D373
0a37L,
DDB-4503
KA band detector
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1N23C
Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:
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