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    CIRCUIT USING IRF640 Search Results

    CIRCUIT USING IRF640 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    SCL3400-D01-1 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    SCC433T-K03-004 Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd
    MRMS591P Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd

    CIRCUIT USING IRF640 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    7438

    Abstract: IRF640S SiHF640S AN609 IRF640L irf640* spice
    Text: IRF640S_RC, IRF640L_RC, SiHF640S_RC, SiHF640L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		IRF640S IRF640L SiHF640S SiHF640L AN609, 12-Mar-10 7438 AN609 irf640* spice PDF

    irf640* spice

    Abstract: AN609 IRF640 SiHF640
    Text: IRF640_RC, SiHF640_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRF640 SiHF640 AN609, 12-Mar-10 irf640* spice AN609 PDF

    schematic diagram UPS

    Abstract: irf640s SCHEMATIC ups
    Text: IRF640S  N - CHANNEL 200V - 0.150Ω - 18A TO-263 MESH OVERLAY MOSFET TYPE IRF640S • ■ ■ ■ V DSS R DS on ID 200 V < 0.18 Ω 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    Original     		IRF640S O-263 schematic diagram UPS irf640s SCHEMATIC ups PDF

    irf640s

    Abstract: T4 1560 50Vt
    Text: IRF640S N - CHANNEL 200V - 0.150Ω - 18A TO-263 MESH OVERLAY MOSFET TYPE IRF640S • ■ ■ ■ V DSS R DS on ID 200 V < 0.18 Ω 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    Original     		IRF640S O-263 irf640s T4 1560 50Vt PDF

    IRFS640A

    Abstract: IRFS640
    Text: IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF640B/IRFS640B O-220F IRFS640B FP001 IRFS640A IRFS640 PDF

    power MOSFET IRF640 fp

    Abstract: irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220
    Text: IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE V DSS R DS on ID IRF640 IRF640FP 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A • ■ ■ ■ TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		IRF640 IRF640FP O-220/TO-220FP O-220 power MOSFET IRF640 fp irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220 PDF

    IRF640

    Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		IRF640 IRF640FP O-220/FP IRF640F O-220 IRF640 IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco PDF

    irf640

    Abstract: IRF640FP IRF640 P CHANNEL MOSFET
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		IRF640 IRF640FP O-220/FP IRF640F O-220 irf640 IRF640FP IRF640 P CHANNEL MOSFET PDF

    irf640

    Abstract: IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF DI L6 power MOSFET IRF640 fp IRF640FP IRF640 circuit IRF640 morocco IRF n CHANNEL MOSFET
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640FP • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		IRF640 IRF640FP O-220/TO-220FP O-220 irf640 IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF DI L6 power MOSFET IRF640 fp IRF640FP IRF640 circuit IRF640 morocco IRF n CHANNEL MOSFET PDF

    irf640

    Abstract: IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp irf640f stmicroelectronics datecode TO-220 0118mm
    Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original     		IRF640 IRF640FP O-220/TO-220FP IRF640F O-220 O-220FP IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp stmicroelectronics datecode TO-220 0118mm PDF

    MOSFET 640N

    Abstract: TO-262 MOSFET IRF640N IRF640NS 640N IRF640NL irf640* spice
    Text: IRF640N/IRF640NS/IRF640NL N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		IRF640N/IRF640NS/IRF640NL O-263 O-220 O-262 100oC, 10opment. MOSFET 640N TO-262 MOSFET IRF640N IRF640NS 640N IRF640NL irf640* spice PDF

    IRF640T

    Abstract: JESD97
    Text: IRF640T N-channel 200V - 0.15Ω - 15A - TO-220 MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID IRF640T 200V <0.16Ω 15A • Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances 3 1 2 TO-220 Description


    Original     		IRF640T O-220 IRF640T JESD97 PDF

    irf640

    Abstract: hexfet irf640 IRF640 circuit
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 O-220 12-Mar-07 irf640 hexfet irf640 IRF640 circuit PDF

    irf640

    Abstract: 5d surface mount diode IRF640L IRF640S SiHF640S SiHF640S-E3 power MOSFET IRF640 IRF640SPBF
    Text: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D D2PAK (TO-263) I2PAK (TO-262)


    Original     		IRF640S, IRF640L, SiHF640S SiHF640L O-263) O-262) 18-Jul-08 irf640 5d surface mount diode IRF640L IRF640S SiHF640S-E3 power MOSFET IRF640 IRF640SPBF PDF

    IRF640

    Abstract: IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
    Text: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■


    Original     		IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco PDF

    IRF640 SILICONIX

    Abstract: No abstract text available
    Text: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D D2PAK (TO-263) I2PAK (TO-262)


    Original     		IRF640S, IRF640L, SiHF640S SiHF640L O-262) O-263) 12-Mar-07 IRF640 SILICONIX PDF

    MOSFET 640N

    Abstract: IRF640NS irf640* spice irf640n circuit using irf640n
    Text: IRF640N/IRF640NS/IRF640NL N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		IRF640N/IRF640NS/IRF640NL O-263 O-262 O-220 100oC, MOSFET 640N IRF640NS irf640* spice irf640n circuit using irf640n PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Low-Profile Through-Hole • Available in Tape and Reel • Dynamic dV/dt Rating


    Original     		IRF640S, IRF640L, SiHF640S SiHF640L 2002/95/EC O-262) O-263) 18-Jul-08 PDF

    IRF640

    Abstract: IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
    Text: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■


    Original     		IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97 PDF

    IRF640L

    Abstract: IRF640S SiHF640S IRF640STRRPBF
    Text: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Low-Profile Through-Hole • Available in Tape and Reel • Dynamic dV/dt Rating


    Original     		IRF640S, IRF640L, SiHF640S SiHF640L 2002/95/EC O-263) O-262) 11-Mar-11 IRF640L IRF640S IRF640STRRPBF PDF

    irf640b

    Abstract: No abstract text available
    Text: IRF640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		IRF640B irf640b PDF

    IRF640

    Abstract: SiHF640 SiHF640-E3 linear applications of power MOSFET IRF640 IRF640 applications note IRF640 application note
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF640 SiHF640-E3 linear applications of power MOSFET IRF640 IRF640 applications note IRF640 application note PDF

    AN-994

    Abstract: IRF640 IRF640L IRF640S linear applications of power MOSFET IRF640
    Text: PD -90902B IRF640S/L HEXFET Power MOSFET l l l l l l l Surface Mount IRF640S Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 200V RDS(on) = 0.18Ω


    Original     		-90902B IRF640S/L IRF640S) IRF640L) 12-Mar-07 AN-994 IRF640 IRF640L IRF640S linear applications of power MOSFET IRF640 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF640, SiHF640 2002/95/EC O-220AB 11-Mar-11 PDF