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    DD 127 D TRANSISTOR

    Abstract: 7318s AN 7145 M circuit power amplifier ADT7316 7317 2N3906 ADT7317 ADT7318 ADT7318ARQ semiconductor ta 7317
    Text: PRELIMINARY TECHNICAL DATA ±0.5°C Accurate Digital Temperature Sensor and a Quad Voltage Output 12/10/8-Bit DAC Preliminary Technical Data ADT7316/7317/7318 FEATURES ADT7316 - Four 12-Bit DACs ADT7317 - Four 10-Bit DACs ADT7318 - Four 8-Bit DACs Buffered Voltage Output


    Original     		PDF 12/10/8-Bit ADT7316/7317/7318 ADT7316 12-Bit ADT7317 10-Bit ADT7318 -40oC 125oC DD 127 D TRANSISTOR 7318s AN 7145 M circuit power amplifier 7317 2N3906 ADT7318ARQ semiconductor ta 7317

    BD920

    Abstract: GLONASS GPS receiver module Trimble sbas kalman filter C NMEA GPS usb
    Text: TRIMBLE BD920 GNSS RECEIVER MODULE DATASHEET KEY FEATURES 220 Channels for multi-constellation GNSS support Fully EMI shielded module Compact design for mobile applications Flexible RS232, USB and ethernet interfacing Centimeter level position accuracy Proven Trimble Maxwell 6 technology


    Original     		PDF BD920 GLONASS GPS receiver module Trimble sbas kalman filter C NMEA GPS usb

    750H

    Abstract: ST-100S
    Text: TL RM,RMM,SM,OM,YM 1052(T20) TOSHIBA LED Lamp TLRM1052(T20),TLRMM1052(T20),TLSM1052(T20), TLOM1052(T20),TLYM1052(T20) Unit: mm Panel Circuit Indicator • 5.2 (L) x 5.2 (W) × 4.0 (H) mm • φ3.6×4.4 mm transparent lens top type • InGaAℓP LEDs • High luminous intensity and low power consumption.


    Original     		PDF TLRM1052 TLRMM1052 TLSM1052 TLOM1052 TLYM1052 TLRM1052 750H ST-100S

    750H

    Abstract: ST-100S AK 1052 TLOM1052T20
    Text: TL RM,RMM,SM,OM,YM 1052(T20) TOSHIBA LED Lamp TLRM1052(T20),TLRMM1052(T20),TLSM1052(T20), TLOM1052(T20),TLYM1052(T20) Unit: mm Panel Circuit Indicator • 5.2 (L) x 5.2 (W) × 4.0 (H) mm • φ3.6×4.4 mm transparent lens top type • InGaAℓP LEDs • High luminous intensity and low power consumption.


    Original     		PDF TLRM1052 TLRMM1052 TLSM1052 TLOM1052 TLYM1052 TLRM1052 750H ST-100S AK 1052 TLOM1052T20

    UHF UHF Transistors

    Abstract: BF909R BF98 BF991
    Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Tuner transistors & diodes NPN TUNER TRANSISTORS type ratings_ number V CEO 'c P.O. V (mA) 50 50 50 50 25 35 25 25 characteristics11_


    OCR Scan     		PDF BF547 BF547W BF747 BFG67 BFR92A BFR93A BFS17 BFS17A OT323 OT143 UHF UHF Transistors BF909R BF98 BF991

    philips vhf uhf tuner

    Abstract: UHF UHF Transistors BF909R philips rf mosfets SOT343R BF908R BF98 BF991
    Text: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Tuner transistors & diodes RF & MICROWAVE SEMICONDUCTORS & MODULES NPN TUNER TRANSISTORS type number characteristics11_ ratings V CEO 'c Ptot h V (mA) (mW) (MHz) F (dB) 50


    OCR Scan     		PDF BF547 BF547W BF747 BFG67 BFR92A BFR93A BFS17 BFS17A OT323 listeF908WR philips vhf uhf tuner UHF UHF Transistors BF909R philips rf mosfets SOT343R BF908R BF98 BF991

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 2M X 32-Bit Dynamic RAM Module HYM 322160S/GS-60/-70 Advanced Information 2 097 152 words by 32-Bit organization alternative 4 194 304 words by 16-Bit CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Fast access and cycle time 60 ns access time


    OCR Scan     		PDF 32-Bit 322160S/GS-60/-70 16-Bit) 023Sb05

    322120S-70

    Abstract: HYB514400
    Text: SIEMENS 2 M X 32-Bit Dynamic RAM Module HYM 322120S-60/-70/-80 Advanced Information • 2 097 152 words by 32-Bit organization alternative 4 194 304 words by 16-Bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time


    OCR Scan     		PDF 32-Bit 322120S-60/-70/-80 16-Bit) fl235bGS 322120S-70 HYB514400

    Untitled

    Abstract: No abstract text available
    Text: ISSI 32,768 X 8 HIGH-SPEED CMOS EPROM FEATURES DESCRIPTION • Fast read access time: 45 ns • Pin compatible with the IS 27C 256 • Low power consumption The I S S IIS27HC256 is a ultra-high-speed 256K-bit Ultravio­ let Erasable CMOS Programmable Read-Only Memory. It


    OCR Scan     		PDF IIS27HC256 256K-bit IS27C256, 600-mil IS27HC256-45WI IS27HC256-45PLI IS27HC256-45CWI IS27HC256-55WI

    74S107

    Abstract: No abstract text available
    Text: BiCMOS STATIC RAM 64K 8K x 8-BIT CACHE-TAG RAM IDT71B74 In te g ra te d D evice T ec hnology, In c . FEATURES: DESCRIPTION: • H igh-speed ad dress to M A TC H com parison tim e — C om m ercia l: 8/1 0/12 /15/20ns (m ax.) • H igh-speed ad dress acce ss tim e


    OCR Scan     		PDF IDT71B74 /15/20ns 6/7/8/10ns 28-pin 28-pi-7 T71B74 74S107

    Q67100-Q2007

    Abstract: Q67100-Q985
    Text: SIEM EN S 8M x 36-Bit Dynamic RAM Module HYM 368020S/GS-60/-70 Prelim inary Inform ation • 24 decoupling capacitors mounted on substrate 8 388 608 words by 36-bit organization alternative 16 777 216 words by 18-bit All inputs, outputs and clocks fully


    OCR Scan     		PDF 36-Bit 368020S/GS-60/-70 18-bit) CMOS-132 fl23SbOS Q67100-Q2007 Q67100-Q985

    Untitled

    Abstract: No abstract text available
    Text: flX IU N XC7336 36-Macrocell CMOS EPLD X Preliminary Product Specifications Features General Description • The XC7336 is a member of the Xilinx Dual-Block EPLD family. It consists of four Fast Function Blocks intercon­ nected by a central Universal Interconnect Matrix UIM .


    OCR Scan     		PDF XC7336 36-Macrocell XC7336 ninC44 44-Pin PG144 PQ160

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS 16-BIT INVERTING BUFFER/LINE DRIVER WITH 3-STATE OUTPUTS AND BUS-HOLD DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)


    OCR Scan     		PDF 16-BIT 250ps MIL-STD-883, 200pF, 635mm IDT74ALVCH16540 ALVCH165puts.

    ED 05 Diode

    Abstract: No abstract text available
    Text: In teg rated D evice T echnology, inc. IDT74LVCH1 6276A 3.3V CMOS 12-BIT ADVANCE INFORMATION S YNCHRO NO US BUS EXCHANGER WITH BUS HOLD AND 5 V O L T T O L E R N A T I/O FEATURES: DESCRIPTION: • C o m m o n feat ur es: The LVCH16276A synchronous tri-port bus exchangers are


    OCR Scan     		PDF IDT74LVCH1 12-BIT LVCH16276A 12-bit, ED 05 Diode

    CD4000C

    Abstract: 72v dc- ac inverter AN-90 CD4000 CD4000M national semiconductor CD4000
    Text: CD4000M/CD4000C Dual 3-Input NOR Gate Plus Inverter General Description Features The CD4000M/CD4000C is a monolithic complementary MOS CMOS dual 2-input NOR gate plus an inverter. Nand P-channel enhancement mode transistors provide a symmetrical circuit with output swings essentially equal to


    OCR Scan     		PDF CD4000M/CD4000C 54C/74C AN-90. CD4000C 72v dc- ac inverter AN-90 CD4000 CD4000M national semiconductor CD4000

    2164 dynamic ram

    Abstract: 2118 intel 2164 RAM Intel 2164 2164 intel 2164 tea 2164 g hidden refresh Intel 2118
    Text: intei' 2164-25 65,536 x 1 BIT DYNAMIC RAM 2164-25 Maximum Access Time ns 250 Read, Write Cycle (ns) 465 Read-Modify-Write Cycle (ns) 530 • Industry Standard 16-pin DIP 128 Refresh Cycles/2 ms RAS-only Refresh ■ HMOS Technology Non-Latched Output is Three-State


    OCR Scan     		PDF 16-pin 2164 dynamic ram 2118 intel 2164 RAM Intel 2164 2164 intel 2164 tea 2164 g hidden refresh Intel 2118

    Untitled

    Abstract: No abstract text available
    Text: SME5222AUPA-400 microsystems Ju ly 1999 _ UltraSPARC -!! CPU Module DATASHEET 400 MHz CPU, 2.0 MB E-Cache M o d u l e D e s c r ip t io n The U ltraSPARC™ -II, 400 M H z CPU, 2.0 M byte E-cache module, SM E5222AUPA-400 , delivers high perfor­


    OCR Scan     		PDF SME5222AUPA-400 E5222AUPA-400)

    Untitled

    Abstract: No abstract text available
    Text: f""* 1 3.3V D U A L D I F F E R E N T I A L S Y N ER G Y P E C L-to -n t L/ \ r j o Ku f' ^ m I ^ ; PQE, , 71i translator S E M IC O N D U C T O R " ' ' “ DESCRIPTION FEATURES • 2.0ns typical propagation delay ■ <500ps typical output-to-output skew ■ Differential PECL inputs


    OCR Scan     		PDF 500ps 10/100ELT23L SY10ELT23LZC SY10ELT23LZCTR SY100ELT23LZC SY100ELT23LZCTR

    2118 intel

    Abstract: Intel 2118 2118 dynamic ram intel 2118 FAMILY tcp 8111 2118 ram S6447 2118-15 S6331 2118-10
    Text: intei 2118 FAMILY 16,384 x 1 BIT DYNAMIC RAM 2118-10 2118-12 Maximum Access Time ns 100 120 150 Read, Write Cycle (ns) 235 270 320 Read-Modify-Write Cycle (ns) 285 320 410 Single +5V Supply, ±10% Tolerance CAS Controlled Output is Three-State, TTL Compatible


    OCR Scan     		PDF

    P80A49H

    Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel
    Text: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.


    OCR Scan     		PDF RMX/80, P80A49H 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel

    SENSYM sx150

    Abstract: SENSYM sx01 SX300N SENSYM SX01DN SSAN-16 SENSYM SENSYM SX05 SX15DD4 sensym vacuum SX1000
    Text: SXOl, 05, 15/ 30/ 100/ 150 0 to 1 psî and 0 to 150 psi PRESSURE SENSORS FEATURES GENERAL DESCRIPTION • Low Cost • High Impedance Bridge • Absolute and Differential Gage The SX Series of pressure sensors provide the lowest cost components for measuring pressures up to 150 psi.


    OCR Scan     		PDF SX150 SENSYM sx150 SENSYM sx01 SX300N SENSYM SX01DN SSAN-16 SENSYM SENSYM SX05 SX15DD4 sensym vacuum SX1000

    CEM9435

    Abstract: No abstract text available
    Text: CEM9435 March 1998 P-Channel Enhancement Mode MOSFET FEATURES • - 3 0 V , - 5 . 1 A , R ds o n =55 itiQ RDS(ON)=105mQ @ V g s = -10 V . @ V gs = -4 .5 V . • Super high dense cell design for extremely low Rds(on). • High power and current handing capability.


    OCR Scan     		PDF CEM9435 55itiQ 105mQ CEM9435

    SK 50 DB 060D

    Abstract: B794 Semitrans Semikron sk 75 DB060D DDQ3617 H21E
    Text: SIE D •'sT h ■ fil3bb?l D003ölb SÔ7 « S E K Ö Sr ö h I hT SEMIKRDN - Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, V be = - 2 V Values Units V V 600 V I 600 600 SEMITRANS 3 NPN Power Darlington Modules 100 A, 600 V II o m I CM > II UJ VcBO


    OCR Scan     		PDF l3bb71 T-33-35 B7-94 SK 50 DB 060D B794 Semitrans Semikron sk 75 DB060D DDQ3617 H21E

    m27c56

    Abstract: M27C516
    Text: [ Z J SGS-THOMSON M27C516 CMOS 512K 32K x 16 UV EPROM and OTP ROM • FAST ACCESS TIME: 120ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 200|xA ■ PROGRAMMING VOLTAGE: 12.75V


    OCR Scan     		PDF M27C516 120ns M27C516 FDIP40W PLCC44 m27c56