DD 127 D TRANSISTOR
Abstract: 7318s AN 7145 M circuit power amplifier ADT7316 7317 2N3906 ADT7317 ADT7318 ADT7318ARQ semiconductor ta 7317
Text: PRELIMINARY TECHNICAL DATA ±0.5°C Accurate Digital Temperature Sensor and a Quad Voltage Output 12/10/8-Bit DAC Preliminary Technical Data ADT7316/7317/7318 FEATURES ADT7316 - Four 12-Bit DACs ADT7317 - Four 10-Bit DACs ADT7318 - Four 8-Bit DACs Buffered Voltage Output
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12/10/8-Bit
ADT7316/7317/7318
ADT7316
12-Bit
ADT7317
10-Bit
ADT7318
-40oC
125oC
DD 127 D TRANSISTOR
7318s
AN 7145 M circuit power amplifier
7317
2N3906
ADT7318ARQ
semiconductor ta 7317
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BD920
Abstract: GLONASS GPS receiver module Trimble sbas kalman filter C NMEA GPS usb
Text: TRIMBLE BD920 GNSS RECEIVER MODULE DATASHEET KEY FEATURES 220 Channels for multi-constellation GNSS support Fully EMI shielded module Compact design for mobile applications Flexible RS232, USB and ethernet interfacing Centimeter level position accuracy Proven Trimble Maxwell 6 technology
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BD920
GLONASS
GPS receiver module Trimble sbas
kalman filter C
NMEA GPS usb
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750H
Abstract: ST-100S
Text: TL RM,RMM,SM,OM,YM 1052(T20) TOSHIBA LED Lamp TLRM1052(T20),TLRMM1052(T20),TLSM1052(T20), TLOM1052(T20),TLYM1052(T20) Unit: mm Panel Circuit Indicator • 5.2 (L) x 5.2 (W) × 4.0 (H) mm • φ3.6×4.4 mm transparent lens top type • InGaAℓP LEDs • High luminous intensity and low power consumption.
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TLRM1052
TLRMM1052
TLSM1052
TLOM1052
TLYM1052
TLRM1052
750H
ST-100S
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750H
Abstract: ST-100S AK 1052 TLOM1052T20
Text: TL RM,RMM,SM,OM,YM 1052(T20) TOSHIBA LED Lamp TLRM1052(T20),TLRMM1052(T20),TLSM1052(T20), TLOM1052(T20),TLYM1052(T20) Unit: mm Panel Circuit Indicator • 5.2 (L) x 5.2 (W) × 4.0 (H) mm • φ3.6×4.4 mm transparent lens top type • InGaAℓP LEDs • High luminous intensity and low power consumption.
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TLRM1052
TLRMM1052
TLSM1052
TLOM1052
TLYM1052
TLRM1052
750H
ST-100S
AK 1052
TLOM1052T20
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UHF UHF Transistors
Abstract: BF909R BF98 BF991
Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Tuner transistors & diodes NPN TUNER TRANSISTORS type ratings_ number V CEO 'c P.O. V (mA) 50 50 50 50 25 35 25 25 characteristics11_
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BF547
BF547W
BF747
BFG67
BFR92A
BFR93A
BFS17
BFS17A
OT323
OT143
UHF UHF Transistors
BF909R
BF98
BF991
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philips vhf uhf tuner
Abstract: UHF UHF Transistors BF909R philips rf mosfets SOT343R BF908R BF98 BF991
Text: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Tuner transistors & diodes RF & MICROWAVE SEMICONDUCTORS & MODULES NPN TUNER TRANSISTORS type number characteristics11_ ratings V CEO 'c Ptot h V (mA) (mW) (MHz) F (dB) 50
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BF547
BF547W
BF747
BFG67
BFR92A
BFR93A
BFS17
BFS17A
OT323
listeF908WR
philips vhf uhf tuner
UHF UHF Transistors
BF909R
philips rf mosfets
SOT343R
BF908R
BF98
BF991
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2M X 32-Bit Dynamic RAM Module HYM 322160S/GS-60/-70 Advanced Information 2 097 152 words by 32-Bit organization alternative 4 194 304 words by 16-Bit CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Fast access and cycle time 60 ns access time
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32-Bit
322160S/GS-60/-70
16-Bit)
023Sb05
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322120S-70
Abstract: HYB514400
Text: SIEMENS 2 M X 32-Bit Dynamic RAM Module HYM 322120S-60/-70/-80 Advanced Information • 2 097 152 words by 32-Bit organization alternative 4 194 304 words by 16-Bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time
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32-Bit
322120S-60/-70/-80
16-Bit)
fl235bGS
322120S-70
HYB514400
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Untitled
Abstract: No abstract text available
Text: ISSI 32,768 X 8 HIGH-SPEED CMOS EPROM FEATURES DESCRIPTION • Fast read access time: 45 ns • Pin compatible with the IS 27C 256 • Low power consumption The I S S IIS27HC256 is a ultra-high-speed 256K-bit Ultravio let Erasable CMOS Programmable Read-Only Memory. It
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IIS27HC256
256K-bit
IS27C256,
600-mil
IS27HC256-45WI
IS27HC256-45PLI
IS27HC256-45CWI
IS27HC256-55WI
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74S107
Abstract: No abstract text available
Text: BiCMOS STATIC RAM 64K 8K x 8-BIT CACHE-TAG RAM IDT71B74 In te g ra te d D evice T ec hnology, In c . FEATURES: DESCRIPTION: • H igh-speed ad dress to M A TC H com parison tim e — C om m ercia l: 8/1 0/12 /15/20ns (m ax.) • H igh-speed ad dress acce ss tim e
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IDT71B74
/15/20ns
6/7/8/10ns
28-pin
28-pi-7
T71B74
74S107
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Q67100-Q2007
Abstract: Q67100-Q985
Text: SIEM EN S 8M x 36-Bit Dynamic RAM Module HYM 368020S/GS-60/-70 Prelim inary Inform ation • 24 decoupling capacitors mounted on substrate 8 388 608 words by 36-bit organization alternative 16 777 216 words by 18-bit All inputs, outputs and clocks fully
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36-Bit
368020S/GS-60/-70
18-bit)
CMOS-132
fl23SbOS
Q67100-Q2007
Q67100-Q985
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Untitled
Abstract: No abstract text available
Text: flX IU N XC7336 36-Macrocell CMOS EPLD X Preliminary Product Specifications Features General Description • The XC7336 is a member of the Xilinx Dual-Block EPLD family. It consists of four Fast Function Blocks intercon nected by a central Universal Interconnect Matrix UIM .
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XC7336
36-Macrocell
XC7336
ninC44
44-Pin
PG144
PQ160
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS 16-BIT INVERTING BUFFER/LINE DRIVER WITH 3-STATE OUTPUTS AND BUS-HOLD DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)
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16-BIT
250ps
MIL-STD-883,
200pF,
635mm
IDT74ALVCH16540
ALVCH165puts.
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ED 05 Diode
Abstract: No abstract text available
Text: In teg rated D evice T echnology, inc. IDT74LVCH1 6276A 3.3V CMOS 12-BIT ADVANCE INFORMATION S YNCHRO NO US BUS EXCHANGER WITH BUS HOLD AND 5 V O L T T O L E R N A T I/O FEATURES: DESCRIPTION: • C o m m o n feat ur es: The LVCH16276A synchronous tri-port bus exchangers are
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IDT74LVCH1
12-BIT
LVCH16276A
12-bit,
ED 05 Diode
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CD4000C
Abstract: 72v dc- ac inverter AN-90 CD4000 CD4000M national semiconductor CD4000
Text: CD4000M/CD4000C Dual 3-Input NOR Gate Plus Inverter General Description Features The CD4000M/CD4000C is a monolithic complementary MOS CMOS dual 2-input NOR gate plus an inverter. Nand P-channel enhancement mode transistors provide a symmetrical circuit with output swings essentially equal to
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CD4000M/CD4000C
54C/74C
AN-90.
CD4000C
72v dc- ac inverter
AN-90
CD4000
CD4000M
national semiconductor CD4000
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2164 dynamic ram
Abstract: 2118 intel 2164 RAM Intel 2164 2164 intel 2164 tea 2164 g hidden refresh Intel 2118
Text: intei' 2164-25 65,536 x 1 BIT DYNAMIC RAM 2164-25 Maximum Access Time ns 250 Read, Write Cycle (ns) 465 Read-Modify-Write Cycle (ns) 530 • Industry Standard 16-pin DIP 128 Refresh Cycles/2 ms RAS-only Refresh ■ HMOS Technology Non-Latched Output is Three-State
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16-pin
2164 dynamic ram
2118 intel
2164 RAM
Intel 2164
2164 intel
2164
tea 2164 g
hidden refresh
Intel 2118
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Untitled
Abstract: No abstract text available
Text: SME5222AUPA-400 microsystems Ju ly 1999 _ UltraSPARC -!! CPU Module DATASHEET 400 MHz CPU, 2.0 MB E-Cache M o d u l e D e s c r ip t io n The U ltraSPARC™ -II, 400 M H z CPU, 2.0 M byte E-cache module, SM E5222AUPA-400 , delivers high perfor
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SME5222AUPA-400
E5222AUPA-400)
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Untitled
Abstract: No abstract text available
Text: f""* 1 3.3V D U A L D I F F E R E N T I A L S Y N ER G Y P E C L-to -n t L/ \ r j o Ku f' ^ m I ^ ; PQE, , 71i translator S E M IC O N D U C T O R " ' ' “ DESCRIPTION FEATURES • 2.0ns typical propagation delay ■ <500ps typical output-to-output skew ■ Differential PECL inputs
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500ps
10/100ELT23L
SY10ELT23LZC
SY10ELT23LZCTR
SY100ELT23LZC
SY100ELT23LZCTR
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2118 intel
Abstract: Intel 2118 2118 dynamic ram intel 2118 FAMILY tcp 8111 2118 ram S6447 2118-15 S6331 2118-10
Text: intei 2118 FAMILY 16,384 x 1 BIT DYNAMIC RAM 2118-10 2118-12 Maximum Access Time ns 100 120 150 Read, Write Cycle (ns) 235 270 320 Read-Modify-Write Cycle (ns) 285 320 410 Single +5V Supply, ±10% Tolerance CAS Controlled Output is Three-State, TTL Compatible
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P80A49H
Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel
Text: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.
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RMX/80,
P80A49H
8035HL
F1L 250 V fuse
BPK-70
interfacing 8275 crt controller with 8086
i8282
hall marking code A04
Transistor AF 138
DK55
82720 intel
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SENSYM sx150
Abstract: SENSYM sx01 SX300N SENSYM SX01DN SSAN-16 SENSYM SENSYM SX05 SX15DD4 sensym vacuum SX1000
Text: SXOl, 05, 15/ 30/ 100/ 150 0 to 1 psî and 0 to 150 psi PRESSURE SENSORS FEATURES GENERAL DESCRIPTION • Low Cost • High Impedance Bridge • Absolute and Differential Gage The SX Series of pressure sensors provide the lowest cost components for measuring pressures up to 150 psi.
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SX150
SENSYM sx150
SENSYM sx01
SX300N
SENSYM SX01DN
SSAN-16
SENSYM
SENSYM SX05
SX15DD4
sensym vacuum
SX1000
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CEM9435
Abstract: No abstract text available
Text: CEM9435 March 1998 P-Channel Enhancement Mode MOSFET FEATURES • - 3 0 V , - 5 . 1 A , R ds o n =55 itiQ RDS(ON)=105mQ @ V g s = -10 V . @ V gs = -4 .5 V . • Super high dense cell design for extremely low Rds(on). • High power and current handing capability.
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CEM9435
55itiQ
105mQ
CEM9435
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SK 50 DB 060D
Abstract: B794 Semitrans Semikron sk 75 DB060D DDQ3617 H21E
Text: SIE D •'sT h ■ fil3bb?l D003ölb SÔ7 « S E K Ö Sr ö h I hT SEMIKRDN - Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, V be = - 2 V Values Units V V 600 V I 600 600 SEMITRANS 3 NPN Power Darlington Modules 100 A, 600 V II o m I CM > II UJ VcBO
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l3bb71
T-33-35
B7-94
SK 50 DB 060D
B794
Semitrans
Semikron sk 75
DB060D
DDQ3617
H21E
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m27c56
Abstract: M27C516
Text: [ Z J SGS-THOMSON M27C516 CMOS 512K 32K x 16 UV EPROM and OTP ROM • FAST ACCESS TIME: 120ns ■ COMPATIBLE WITH HIGH SPEED MICRO PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 200|xA ■ PROGRAMMING VOLTAGE: 12.75V
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M27C516
120ns
M27C516
FDIP40W
PLCC44
m27c56
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