Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CGS RESISTOR C14 Search Results

    CGS RESISTOR C14 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LT5400ACMS8E-2#PBF Analog Devices 4x Matched Res Network Visit Analog Devices Buy
    LT5400AHMS8E-2#PBF Analog Devices 4x Matched Res Network Visit Analog Devices Buy
    LT5400AIMS8E-3#TRPBF Analog Devices 4x Matched Res Network Visit Analog Devices Buy
    LT5400BCMS8E-3#TRPBF Analog Devices 4x Matched Res Network Visit Analog Devices Buy
    LT5400BCMS8E-8#TRPBF Analog Devices 4x Matched Res Network Visit Analog Devices Buy

    CGS RESISTOR C14 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cgs resistor c7

    Abstract: CGS C14 cgs resistor c14 Meggitt CGS 1 R/cgs resistor c7 CGS 1R0
    Text: MEGGITT CGS HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS High Power Resistors TYPE C SERIES Meggitt CGS has manufactured the 'C' Series of Vitreous Enamelled Wirewound Resistors for more than


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ISL6113, ISL6114 Data Sheet September 25, 2007 FN6457.0 Dual Slot PCI-E Hot Plug Controllers Features The ISL6113, ISL6114 both target the PCI-Express Add-in card hot swap application. Together with a pair of N-Channel and P-Channel MOSFETs, and two sense resistors per slot, either


    Original     		PDF ISL6113, ISL6114 FN6457 ISL6114 5m-1994.

    IRZ 40

    Abstract: pci-e 98 pins pcb layout PCI-Express 2.0 X8 connector Pinout IRZ 46 graphic card circuit diagram ISL6113 l48 diode marking x16 MOSFET marking -ddr -sdram -rimm -sram -fla ISL6112 ISL6114
    Text: ISL6113, ISL6114 Data Sheet September 25, 2007 FN6457.0 Dual Slot PCI-E Hot Plug Controllers Features The ISL6113, ISL6114 both target the PCI-Express Add-in card hot swap application. Together with a pair of N-Channel and P-Channel MOSFETs, and two sense resistors per slot, either


    Original     		PDF ISL6113, ISL6114 FN6457 ISL6114 5m-1994. IRZ 40 pci-e 98 pins pcb layout PCI-Express 2.0 X8 connector Pinout IRZ 46 graphic card circuit diagram ISL6113 l48 diode marking x16 MOSFET marking -ddr -sdram -rimm -sram -fla ISL6112

    k1206

    Abstract: cgs resistor c7 A123 transistor l2 k1206 220 r3
    Text: e PTF 10120 120 Watts, 1.8–2.0 GHz LDMOS Field Effect Transistor Description The 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts minimum


    Original     		PDF K1206 G-200, 1-877-GOLDMOS 1301-PTF k1206 cgs resistor c7 A123 transistor l2 k1206 220 r3

    k1206

    Abstract: G200 LDMOS transistor 1W
    Text: PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output.


    Original     		PDF K1206 1-877-GOLDMOS 1301-PTF k1206 G200 LDMOS transistor 1W

    k1206

    Abstract: k1206 220 r3 cgs resistor G200
    Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description The PTF 10125 is an internally matched 135–watt GOLDMOS FET intended for linear driver and final applications from 1.4 to 1.6 GHz such as DAB/DRB. It operates at 40% efficiency with 12.5 dB typical


    Original     		PDF K1206 1-877-GOLDMOS 1522-PTF k1206 k1206 220 r3 cgs resistor G200

    k1206

    Abstract: RF Transistor 1500 MHZ
    Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. Rated output power is 135 watts. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.


    Original     		PDF K1206 G-200, 1-877-GOLDMOS 1301-PTF RF Transistor 1500 MHZ

    10125

    Abstract: G200 K1206 rf mosfet ericsson
    Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated


    Original     		PDF K1206 1-877-GOLDMOS 1301-PTF 10125 G200 K1206 rf mosfet ericsson

    J120 MOSFET

    Abstract: J115 mosfet AN211A MRF175LU VK200 MOSFET J140
    Text: Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original     		PDF MRF175LU/D MRF175LU J120 MOSFET J115 mosfet AN211A MRF175LU VK200 MOSFET J140

    Untitled

    Abstract: No abstract text available
    Text: Dual Slot PCI-Express Hot Plug Controller ISL6112 Features The ISL6112 targets the PCI-Express add-in card hot plug application. Together with two each of N-Channel and P-Channel MOSFETs, four current sense resistors, and several external passive components, the ISL6112 provides a


    Original     		PDF ISL6112 ISL6112 5m-1994. FN6456

    smd capa

    Abstract: p33k
    Text: Package 20275 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET PD21120R6 Description Key Features The PD21120R6 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold


    Original     		PDF PD21120R6 PD21120R6 PCS6106TR PCC103BCT 1/16W smd capa p33k

    MRF1550

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


    Original     		PDF MRF1550T1 AN215A, MRF1550

    Untitled

    Abstract: No abstract text available
    Text: 120 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102003 Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold


    Original     		PDF 1/16W 1-877-GOLDMOS 1522-PTF

    capicitor

    Abstract: smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19
    Text: PTF 10161 165 Watts, 869–894 MHz GOLDMOS Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride


    Original     		PDF 220QBK-ND 1-877-GOLDMOS 1522-PTF capicitor smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19

    48 Ohms Resistors CGS

    Abstract: PTF102003 600B microstrip resistor PCC103BCT
    Text: 375D–03, STYLE 1 Package 20275 120 Watts, 21 10-2170 MHz PUSH/PULL LATERAL MOSFET PTF102003 Description Key Features The PTF102003 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold


    Original     		PDF PTF102003 PTF102003 PCS6106TR PCC103BCT 1/16W 48 Ohms Resistors CGS 600B microstrip resistor PCC103BCT

    VK200 20/4B inductor

    Abstract: VK200 inductor of high frequencies VK200 4B inductor 100 watt hf mosfet 12 volt IN 965 b zener diode AN211A MRF175LU MRF175LV VK200 Nippon capacitors
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original     		PDF MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LU/D* VK200 20/4B inductor VK200 inductor of high frequencies VK200 4B inductor 100 watt hf mosfet 12 volt IN 965 b zener diode AN211A MRF175LV VK200 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode . . . designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original     		PDF MRF175LU/D MRF175LU MRF175LV 10orola MRF175LU MRF175LU/D*

    inductor vk200

    Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LU MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original     		PDF MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LU/D* inductor vk200 VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor

    MRF1550F

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices


    Original     		PDF AN215A, MRF1550T1 MRF1550FT1 MRF1550F

    MOTOROLA LINEAR HF

    Abstract: MRF175LV Nippon capacitors MRF175
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original     		PDF MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LV MRF175LU/D* MRF175LU/D MOTOROLA LINEAR HF Nippon capacitors MRF175

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    Original     		PDF MRF175LU/D MRF175LU MRF175LV MRF175LU MRF175LU/D*

    MRF1550N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 MRF1550T1 MRF1550FT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices


    Original     		PDF AN215A, MRF1550NT1 MRF1550FNT1 MRF1550T1 MRF1550FT1 MRF1550N

    EB209

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband


    Original     		PDF MRF1550T1 AN215A, EB209

    25Wx4

    Abstract: PCI-Express 2.0 X8 connector Pinout ISL6112 ISL6112EVAL1Z ISL6112INZA ISL6112INZA-T ISL6112IRZA ISL6112IRZA-T MIC2592B-2YTQ TPS2363
    Text: ISL6112 Data Sheet September 28, 2007 FN6456.0 Dual Slot PCI-Express Power Controller Features The ISL6112 targets the PCI-Express add-in card hot plug application. Together with two each of N-Channel and P-Channel MOSFETs, four current sense resistors and


    Original     		PDF ISL6112 FN6456 ISL6112 25Wx4 PCI-Express 2.0 X8 connector Pinout ISL6112EVAL1Z ISL6112INZA ISL6112INZA-T ISL6112IRZA ISL6112IRZA-T MIC2592B-2YTQ TPS2363