Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CGH400 Search Results

    SF Impression Pixel

    CGH400 Price and Stock

    MACOM CGH40006S

    RF MOSFET HEMT 28V 6QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH40006S Reel 955 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $37.775
    • 10000 $37.775
    Buy Now
    CGH40006S Digi-Reel 955 1
    • 1 $56.02
    • 10 $43.544
    • 100 $37.775
    • 1000 $37.775
    • 10000 $37.775
    Buy Now
    CGH40006S Cut Tape 955 1
    • 1 $56.02
    • 10 $43.544
    • 100 $37.775
    • 1000 $37.775
    • 10000 $37.775
    Buy Now
    Mouser Electronics CGH40006S 1,404
    • 1 $49.44
    • 10 $45.14
    • 100 $40.02
    • 1000 $39.26
    • 10000 $39.26
    Buy Now
    Richardson RFPD CGH40006S 1
    • 1 $63.55
    • 10 $63.55
    • 100 $63.55
    • 1000 $63.55
    • 10000 $63.55
    Buy Now

    MACOM CGH40025F

    RF MOSFET HEMT 28V 440166
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH40025F Tray 621 1
    • 1 $133.12
    • 10 $133.12
    • 100 $133.12
    • 1000 $133.12
    • 10000 $133.12
    Buy Now
    Mouser Electronics CGH40025F
    • 1 $151.71
    • 10 $143.33
    • 100 $143.33
    • 1000 $143.33
    • 10000 $143.33
    Get Quote
    Verical CGH40025F 39 1
    • 1 $251.2
    • 10 $251.2
    • 100 $251.2
    • 1000 $251.2
    • 10000 $251.2
    Buy Now
    Richardson RFPD CGH40025F 39 1
    • 1 $251.2
    • 10 $251.2
    • 100 $251.2
    • 1000 $251.2
    • 10000 $251.2
    Buy Now

    MACOM CGH40090PP

    RF MOSFET HEMT 28V 440199
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH40090PP Tray 273 1
    • 1 $400.3
    • 10 $368.562
    • 100 $368.562
    • 1000 $368.562
    • 10000 $368.562
    Buy Now
    Mouser Electronics CGH40090PP
    • 1 -
    • 10 -
    • 100 $374.24
    • 1000 $374.24
    • 10000 $374.24
    Get Quote

    MACOM CGH40045F

    RF MOSFET HEMT 28V 440193
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH40045F Tray 193 1
    • 1 $276.59
    • 10 $243.288
    • 100 $243.288
    • 1000 $243.288
    • 10000 $243.288
    Buy Now
    Mouser Electronics CGH40045F 61
    • 1 $253.93
    • 10 $239.31
    • 100 $239.26
    • 1000 $239.26
    • 10000 $239.26
    Buy Now
    Verical CGH40045F 24 1
    • 1 $448.65
    • 10 $448.65
    • 100 $448.65
    • 1000 $448.65
    • 10000 $448.65
    Buy Now
    Richardson RFPD CGH40045F 24 1
    • 1 $448.61
    • 10 $448.61
    • 100 $448.61
    • 1000 $448.61
    • 10000 $448.61
    Buy Now

    MACOM CGH40035F

    RF MOSFET HEMT 28V 440193
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH40035F Tray 118 1
    • 1 $278.15
    • 10 $244.838
    • 100 $244.838
    • 1000 $244.838
    • 10000 $244.838
    Buy Now
    Mouser Electronics CGH40035F 258
    • 1 $197.65
    • 10 $189.29
    • 100 $185.12
    • 1000 $185.12
    • 10000 $185.12
    Buy Now
    Richardson RFPD CGH40035F 1
    • 1 $368.04
    • 10 $368.04
    • 100 $368.04
    • 1000 $368.04
    • 10000 $368.04
    Buy Now

    CGH400 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH40006P Cree RF FETs, Discrete Semiconductor Products, TRANS 8W RF GAN HEMT 440109 PKG Original PDF
    CGH40006P-AMP Wolfspeed CGH40006P DEV BOARD WITH HEMT Original PDF
    CGH40006P-AMP Wolfspeed CGH40006P DEV BOARD WITH HEMT Original PDF
    CGH40006P-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40006P Original PDF
    CGH40006S Cree RF FETs, Discrete Semiconductor Products, FET RF HEMT 6GHZ 28V 3X3QFN Original PDF
    CGH40006S-AMP1 Wolfspeed FET RF HEMT 28V 100MA 440203 Original PDF
    CGH40006S-AMP1 Wolfspeed FET RF HEMT 28V 100MA 440203 Original PDF
    CGH40006S-KIT Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, FET RF HEMT 28V 100MA 440203 Original PDF
    CGH40010 Cree 10 W, RF Power GaN HEMT Original PDF
    CGH40010F Cree RF FETs, Discrete Semiconductor Products, TRANS 10W RF GAN HEMT 440166 PKG Original PDF
    CGH40010F-AMP Wolfspeed CGH40010F DEV BOARD WITH HEMT Original PDF
    CGH40010F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40010 Original PDF
    CGH40010P Cree RF FETs, Discrete Semiconductor Products, TRANS 10W RF GAN HEMT 440196 Original PDF
    CGH40025F Cree RF FETs, Discrete Semiconductor Products, TRANS 25W RF GAN HEMT 440166 PKG Original PDF
    CGH40025F Cree 25 W, RF Power GaN HEMT Original PDF
    CGH40025F-AMP Wolfspeed CGH40025F DEV BOARD WITH HEMT Original PDF
    CGH40025F-AMP Wolfspeed CGH40025F DEV BOARD WITH HEMT Original PDF
    CGH40025F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40025 Original PDF
    CGH40035F Cree RF FETs, Discrete Semiconductor Products, TRANS 35W RF GAN HEMT 440193 PKG Original PDF
    CGH40035F-AMP Wolfspeed CGH40035F DEV BOARD WITH HEMT Original PDF

    CGH400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    str w 6554 a

    Abstract: STR 6554 a
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    PDF CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a STR 6554 a

    Untitled

    Abstract: No abstract text available
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original
    PDF CGH40006P CGH40006P CGH40006P, CGH40

    Cree Microwave

    Abstract: No abstract text available
    Text: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    PDF CGH40010 CGH40010 CGH40010, CGH40 40010P Cree Microwave

    CGH40006P-TB

    Abstract: RO5880 006P CGH40006P JESD22 CGH40006
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original
    PDF CGH40006P CGH40006P CGH40006P, CGH40 CGH40006P-TB RO5880 006P JESD22 CGH40006

    CGH40045

    Abstract: CGH40045F JESD22 AN 17821 A 40045P CGH40045-TB
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original
    PDF CGH40045 CGH40045 CGH40045, CGH40 40045P CGH40045F JESD22 AN 17821 A 40045P CGH40045-TB

    STR 6307 POWER

    Abstract: RO4350B STR 6735 470PF CGH4003 CGH40035 CGH40035F CGH40035F-TB CGH40035-TB JESD22
    Text: CGH40035F 35 W, RF Power GaN HEMT Cree’s CGH40035F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original
    PDF CGH40035F CGH40035F CGH40035F, CGH4003 CGH40035 STR 6307 POWER RO4350B STR 6735 470PF CGH4003 CGH40035F-TB CGH40035-TB JESD22

    CGH40090PP

    Abstract: 10UF CGH4009 CGH40090PP-TB JESD22 transistor 702 F smd
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original
    PDF CGH40090PP CGH40090PP CGH40090PP, CGH4009 10UF CGH4009 CGH40090PP-TB JESD22 transistor 702 F smd

    STR F 6168

    Abstract: CGH40025-TB j326 CGH40025 Cree Microwave CGH40025F JESD22 40025F CGH40025P hemt .s2p
    Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original
    PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F STR F 6168 CGH40025-TB j326 Cree Microwave CGH40025F JESD22 40025F CGH40025P hemt .s2p

    CGH40090PP

    Abstract: CGH40090PP-TB Cree Microwave JESD22 10UF CGH4009 hemt .s2p
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original
    PDF CGH40090PP CGH40090PP CGH40090PP, CGH4009 CGH40090PP-TB Cree Microwave JESD22 10UF CGH4009 hemt .s2p

    TRANSISTOR SMD 9014

    Abstract: 9014 SMD CGH40090PP CGH40090PP-TB 9014 transistor smd Cree Microwave LK 10 0112 64 10UF CGH4009 RO4350B
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original
    PDF CGH40090PP CGH40090PP CGH40090PP, CGH4009 TRANSISTOR SMD 9014 9014 SMD CGH40090PP-TB 9014 transistor smd Cree Microwave LK 10 0112 64 10UF CGH4009 RO4350B

    CGH40035F

    Abstract: No abstract text available
    Text: CGH40035F 35 W, RF Power GaN HEMT Cree’s CGH40035F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original
    PDF CGH40035F CGH40035F CGH40035F, CGH4003 CGH40035

    CGH40045

    Abstract: No abstract text available
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original
    PDF CGH40045 CGH40045 CGH40045, CGH40 40045P

    CGH40045F

    Abstract: CGH40045 10UF cree L2
    Text: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    PDF CGH40045 CGH40045 CGH40045, CGH4004 CGH40045F 10UF cree L2

    CGH40006

    Abstract: f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original
    PDF CGH40006P CGH40006 CGH40006, CGH40 f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649

    Untitled

    Abstract: No abstract text available
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original
    PDF CGH40006P CGH40006P CGH40006P, CGH40

    CGH40045F

    Abstract: CGH40045 ATC100B Cree Microwave 10UF JESD22
    Text: CGH40045F 45 W, RF Power GaN HEMT Cree’s CGH40045F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    PDF CGH40045F CGH40045F CGH40045F, CGH4004 CGH40045 ATC100B Cree Microwave 10UF JESD22

    CGH40035

    Abstract: str f 6267 CGH40035F of str 6309 8402 0121 Cree Microwave 10UF 470PF str 6267 f CGH40035F-TB
    Text: CGH40035 35 W, RF Power GaN HEMT Cree’s CGH40035 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original
    PDF CGH40035 CGH40035 CGH40035, CGH4003 str f 6267 CGH40035F of str 6309 8402 0121 Cree Microwave 10UF 470PF str 6267 f CGH40035F-TB

    str w 6554 a

    Abstract: str 6554 str w 6554 STR 6754 RO4350 RO4350B 0618 Cree Microwave STR 6554 a CGH40025
    Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain


    Original
    PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F str w 6554 a str 6554 str w 6554 STR 6754 RO4350 RO4350B 0618 Cree Microwave STR 6554 a

    STR W 5753 a

    Abstract: CGH40010 str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    PDF CGH40010 CGH40010 CGH40010, CGH40 40010P STR W 5753 a str 5753 str w 5753 8891 8952 Cree Microwave 10UF 470PF CGH40010F

    CGH40045

    Abstract: 8644 cgh40045f 8822 TRANSISTOR ATC100B Cree Microwave TC 8644 10UF 33UF RO4350B
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    PDF CGH40045 CGH40045 CGH40045, CGH4004 8644 cgh40045f 8822 TRANSISTOR ATC100B Cree Microwave TC 8644 10UF 33UF RO4350B

    10UF

    Abstract: CGH4009 CGH40090PP CGH40090PP-TB JESD22 smd transistor s2p
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original
    PDF CGH40090PP CGH40090PP CGH40090PP, CGH4009 10UF CGH4009 CGH40090PP-TB JESD22 smd transistor s2p

    Untitled

    Abstract: No abstract text available
    Text: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original
    PDF CGH40045 CGH40045 CGH40045, CGH40 40045P

    str w 6554 a

    Abstract: CGH40010 Large Signal Model CGH40010F str w 6554 CGH40015 CGH40015F STR 6554 a CGH40010P str f 6554 str 6808
    Text: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original
    PDF CGH40010 CGH40010 CGH40010, CGH40 40010P str w 6554 a CGH40010 Large Signal Model CGH40010F str w 6554 CGH40015 CGH40015F STR 6554 a CGH40010P str f 6554 str 6808

    cgh40090

    Abstract: CGH40090PP-TB
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original
    PDF CGH40090PP CGH40090PP CGH40090PP, CGH4009 cgh40090 CGH40090PP-TB