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    CGH27015P Price and Stock

    MACOM CGH27015P

    RF MOSFET HEMT 28V 440196
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    Richardson RFPD CGH27015P 1
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    CGH27015P Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CGH27015P Wolfspeed 15W, GAN HEMT, 28V, DC-6.0GHZ, P Original PDF
    CGH27015P Wolfspeed 15W, GAN HEMT, 28V, DC-6.0GHZ, P Original PDF

    CGH27015P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CGH27015

    Abstract: CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF
    Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF

    CGH09120F

    Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
    Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR


    Original     		PDF CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F

    CGH27015-TB

    Abstract: CGH27015 CGH27015F JESD22
    Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P CGH27015-TB CGH27015F JESD22

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P

    STR W 5753 a

    Abstract: str w 5753 str 5753 CGH27015-TB 10UF 470PF CGH27015 CGH27015F 44019
    Text: CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P STR W 5753 a str w 5753 str 5753 CGH27015-TB 10UF 470PF CGH27015F 44019

    CGH27015-TB

    Abstract: CGH27015
    Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P CGH27015-TB

    Untitled

    Abstract: No abstract text available
    Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P