cew 55
Abstract: No abstract text available
Text: =W e9 S H See Pag CAW o R oir / 54 à/to 65 CEW 54 à/to 65 Appellation commerciale / Commercial type CAW 54 9 ± 0,1 Version R 0,3 ± 0,05 15 min. Version AR Version W % Ø 0,8 +- 10 0,05 у 30 CARACTERISTIQUES GENERALES Diélectrique Céramique haute tension
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150VDC
cew 55
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Untitled
Abstract: No abstract text available
Text: =W e9 S H e Pag CAW 54 à/to 65 CEW 54 à/to 65 Appellation commerciale / Commercial type CAW 54 L, W, T : ± 0,5 mm 9 ± 0,1 Version R 15 min. 0,3 ± 0,05 Version AR Version W % Ø 0,8 +- 10 0,05 у 30 CARACTERISTIQUES GENERALES Diélectrique Céramique haute tension
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facon capacitors
Abstract: CEC CAPACITORS resistor codification EUROFARAD EUROFARAD CAPACITORS datasheet EUROFARAD cec EUROFARAD cec 14 cec 2r0 1 CEW65 E24-E48-E96
Text: CONDENSATEURS CHIPS CERAMIQUE HYPERFREQUENCE MICROWAVE CERAMIC CHIP CAPACITORS SOMMAIRE SUMMARY Généralités sur les chips céramique multicouches hyperfréquence Feuilles particulières sur les chips céramique multicouches hyper. Généralités sur les condensateurs céramique monocouches hyper.
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ceramic capacitor Eurofarad X7R
Abstract: CEC CAPACITORS EUROFARAD capacitor datasheet ceramique EUROFARAD cec cea 271 EUROFARAD EUROFARAD CAPACITORS datasheet EUROFARAD datasheet CECC32101
Text: CONDENSATEURS CHIPS CERAMIQUE HYPERFREQUENCE MICROWAVE CERAMIC CHIP CAPACITORS SOMMAIRE SUMMARY Généralités sur les chips céramique multicouches hyperfréquence Feuilles particulières sur les chips céramique multicouches hyper. Généralités sur les condensateurs céramique monocouches hyper.
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Untitled
Abstract: No abstract text available
Text: Advance‡ 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and
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MT45W1MW16BDGB
09005aef81cb58ed/Source:
09005aef81c7a667
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active suspension sensor
Abstract: No abstract text available
Text: 2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BA MT45W1MW16BA* *Note: Please contact the factory for all new 16Mb designs. For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/products/psram/cellularram/
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MT45W2MW16BA
MT45W1MW16BA*
09005aef80ec6f63/Source:
09005aef80ec6f46
active suspension sensor
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962n
Abstract: No abstract text available
Text: 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W2MW16BAFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns
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09005aef80ec6f63
pdf/09005aef80ec6f46
962n
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features • • • • • Figure 1: Ball Assignment 54-Ball VFBGA Single device supports asynchronous, page, and burst operations VCC, VCCQ Voltages
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MT45W4MW16BFB
MT45W2MW16BFB
54-Ball
09005aef80be1fbd
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BCR100
Abstract: No abstract text available
Text: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc
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128Mb
09005aef80ec6f79
pdf/09005aef80ec6f65
128Mb_
BCR100
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB MT45W4ML16BFB MT45W2ML16BFB Features Figure 1: Ball Assignment 54-Ball FBGA For the latest data sheet, please refer to Micron’s Web site:
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09005aef80be2036/09005aef80be1fbd
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PX3541
Abstract: PX3551 Burst CellularRAM Memory PW245 T2025
Text: ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: Ball Assignment 54-Ball FBGA For the latest data sheet, please refer to Micron’s Web site: www.micron.com/datasheets.
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MT45W4MW16BFB
MT45W2MW16BFB
54-Ball
Int/03
09005aef80be2036/09005aef80be1fbd
PX3541
PX3551
Burst CellularRAM Memory
PW245
T2025
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PX245
Abstract: PX2511 pw251 BCR150
Text: ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: Ball Assignment 54-Ball FBGA For the latest data sheet, please refer to Micron’s Web site: www.micron.com/datasheets.
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09005aef80be2036/09005aef80be1fbd
PX245
PX2511
pw251
BCR150
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A09 N03 MOSFET
Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04
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AD1580-A
AD1580-B
AD1582-A
AD1582-B
AD1582-C
AD1583-A
AD1583-B
AD1583-C
AD1584-A
AD1584-B
A09 N03 MOSFET
marking B3A sot23-5
t7G SOT23-6
marking H2A sot-23
ADM2004
marking moy sot-23
A06 N03 MOSFET
SOT23-5 D2Q
M05 SOT-23
M2A MARKING SOT-23
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Untitled
Abstract: No abstract text available
Text: 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory Features Async/Page/Burst CellularRAMTM 1.5 Memory MT45W4MW16BCGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.70V–1.95V VCC 1.70V–3.30V VCCQ1
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MT45W4MW16BCGB
09005aef816fba98
09005aef816fbaa3
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MT45W8MW16BGX
Abstract: MT45W8MW16BGX-701LWT BDQ8 CSP3-20
Text: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ
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128Mb
MT45W8MW16BGX
54-Ball
39nsH
09005aef80ec6f79
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128Mb_
MT45W8MW16BGX
MT45W8MW16BGX-701LWT
BDQ8
CSP3-20
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Untitled
Abstract: No abstract text available
Text: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features Power supply voltage of 1.7 to 1.95V
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S71WSxxxJ
16-bit)
66MHz
S71WS
S71WS256/128/064J
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S71WS512ND0BFWEP
Abstract: LZ 48H 526 71WS512ND0BFWEP BAX55 S71WS512 71WS512ND
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CELLULAR RAM ADVANCE INFORMATION Datasheet Distinctive Characteristics
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
54MHz
S71WS
S71WS512/256Nx0
S71WS512Nx0/S71WS256Nx0
S71WS512ND0BFWEP
LZ 48H 526
71WS512ND0BFWEP
BAX55
S71WS512
71WS512ND
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Untitled
Abstract: No abstract text available
Text: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM ADVANCE Distinctive Characteristics MCP Features Power supply voltage of 1.7 to 1.95V
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S71WSxxxJ
16-bit)
66MHz
S71WS
S71WS256/128/064J
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MT45W8MW16BGX
Abstract: MT45W8MW16BGX-701LWT 700000H-7FFFFFH
Text: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc
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MT45W8MW16BGX
54-Ball
09005aef80ec6f79
pdf/09005aef80ec6f65
MT45W8MW16BGX
MT45W8MW16BGX-701LWT
700000H-7FFFFFH
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Untitled
Abstract: No abstract text available
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
S71WS-N-00
S71WS-N-00
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CEW SOT23
Abstract: marking CEW transistor marking CEW sot23 cew marking
Text: KSC3123 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER SOT-23 GcE=23dB C r e “ * .0 p F ABSOLUTE MAXIMUM RATINGS TA-251C C haracteristic Sym bol Collector Base Voltage Collector Em itter Voltage Em itter Base Voltage Collector Current Base Current
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KSC3123
OT-23
-251C)
CEW SOT23
marking CEW transistor
marking CEW sot23
cew marking
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S-8324AXXM
Abstract: HA2010
Text: Contents Features. 1 A Block D iagram . 1 Selection G u id e .2
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S-8324/8328
S-8324AXXM
HA2010
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S201000
Abstract: No abstract text available
Text: S-201000 1M-bit MASK ROM The S -201000 is a high-speed, low-power 1,048,576-bit 131,072 words x 8 bits mask programmable ROM, that uses the CMOS process. The control pin can be selected from chip select, chip enable, and output enable. Its completely static operation requires no
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S-201000
576-bit
28-pin
Q0D2413
S201000
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diode B14A
Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070
Text: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato*1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)
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00CHb51
000Rb52
T0126
15A3DIN
diode B14A
B14A diode
TFK 03 Diode
TFK3070D
TFK 001
B14A
23 TFK 001
TFK u 269
TFK 03
TFK3070
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