CEP6060R
Abstract: CEP6060R equivalent CEB6060R cep6060
Text: CEP6060R/CEB6060R N-Channel Enhancement Mode Field Effect Transistor 4 FEATURES 60V , 60A , RDS ON =25m Ω D @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. G D G S CEB SERIES
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CEP6060R/CEB6060R
O-220
O-263
CEP6060R
CEP6060R equivalent
CEB6060R
cep6060
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ceb6060l
Abstract: No abstract text available
Text: CEP6060L/CEB6060L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A,RDS ON = 20mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired.
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CEP6060L/CEB6060L
O-220
O-263
ceb6060l
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cep6060n
Abstract: No abstract text available
Text: CEP6060N/CEB6060N N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 42A, RDS ON = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.
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CEP6060N/CEB6060N
O-220
O-263
cep6060n
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CEP6060R
Abstract: CEP6060
Text: CEP6060R/CEB6060R N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 60A, RDS ON = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.
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CEP6060R/CEB6060R
O-220
O-263
CEP6060R
CEP6060
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CEP6060R
Abstract: CEP6060R equivalent S-1320
Text: CEP6060R/CEB6060R N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A, RDS ON = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.
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CEP6060R/CEB6060R
O-220
O-263
CEP6060R
CEP6060R equivalent
S-1320
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cep6060
Abstract: ceb6060l CEP6060L C3020
Text: CEP6060L/CEB6060L March 1998 4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V , 48A , RDS ON =20m Ω @VGS=10V. RDS(ON)=25m Ω @VGS= 5 V. Super high dense cell design for extremely low RDS(ON). D High power and current handling capability.
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CEP6060L/CEB6060L
O-220
O-263
cep6060
ceb6060l
CEP6060L
C3020
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CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223
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O-251/TO-252
O-220/TO-263
OT-23
OT-223
OT-89
2928-8J
O-220FM
CEP50N06
CEP83A3 equivalent
cep83a3
CEF02N6A
cep6355
FQPF8N60C equivalent
CEF04N6 equivalent
CEP63A3
CEP20N06
cep76139
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cep6060
Abstract: u1520 IDM144 S1200 TQ-220
Text: mu CEP6060/CEB6060 March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 4 8 A , Rds on =25i7iQ @Vgs=10V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability. • TO-220 & TO-263 package.
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CEP6060/CEB6060
25itiQ
TQ-220
O-263
to-263
cep6060
u1520
IDM144
S1200
TQ-220
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CEP6060R
Abstract: EP6060R CEP6060
Text: CEP6060R/CEB6060R PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 6 0 A , RDS ON =25m Q @ V g s = 10 V . • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability. • TO-220 & TO-263 package.
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CEP6060R/CEB6060R
25itiQ
TQ-220
O-263
P6060R/C
B6060R
CEP6060R
EP6060R
CEP6060
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CEP6060L
Abstract: ceb6060l B606
Text: E CEP6060L/CEB6060L E E M arch 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 4 8 A , RDS ON =20m Q @ V gs =1 0V. R ds(on)=25iti Q @ V gs = 5 V. D • Super high dense cell design for extremely low Rds(on> • High power and current handling capability.
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CEP6060L/CEB6060L
25itiQ
O-220
O-263
to-263
to-220
CEP6060L/CEB6060L
CEP6060L
ceb6060l
B606
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I2110
Abstract: No abstract text available
Text: PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 6 0 A , RDS ON =20mQ @ V g s = 10 V . R ds (o n )=25 iti Q @ V gs= 5 V . • Super high dense cell design for extremely low Rds(on> • High power and current handling capability.
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CEP6060LR/CEB6060LR
25itiQ
O-220
O-263
to-263
to-220
I2110
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