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    CEB6060L Search Results

    CEB6060L Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CEB6060L Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEB6060LR Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF

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    ceb6060l

    Abstract: No abstract text available
    Text: CEP6060L/CEB6060L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A,RDS ON = 20mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired.


    Original     		PDF CEP6060L/CEB6060L O-220 O-263 ceb6060l

    cep6060

    Abstract: ceb6060l CEP6060L C3020
    Text: CEP6060L/CEB6060L March 1998 4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V , 48A , RDS ON =20m Ω @VGS=10V. RDS(ON)=25m Ω @VGS= 5 V. Super high dense cell design for extremely low RDS(ON). D High power and current handling capability.


    Original     		PDF CEP6060L/CEB6060L O-220 O-263 cep6060 ceb6060l CEP6060L C3020

    CEP6060L

    Abstract: ceb6060l B606
    Text: E CEP6060L/CEB6060L E E M arch 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 4 8 A , RDS ON =20m Q @ V gs =1 0V. R ds(on)=25iti Q @ V gs = 5 V. D • Super high dense cell design for extremely low Rds(on> • High power and current handling capability.


    OCR Scan     		PDF CEP6060L/CEB6060L 25itiQ O-220 O-263 to-263 to-220 CEP6060L/CEB6060L CEP6060L ceb6060l B606

    I2110

    Abstract: No abstract text available
    Text: PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 6 0 A , RDS ON =20mQ @ V g s = 10 V . R ds (o n )=25 iti Q @ V gs= 5 V . • Super high dense cell design for extremely low Rds(on> • High power and current handling capability.


    OCR Scan     		PDF CEP6060LR/CEB6060LR 25itiQ O-220 O-263 to-263 to-220 I2110