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    CE DIODE Search Results

    CE DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    CE DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5R380CE

    Abstract: IPA50R380CE 5R38 IPI50R380CE IPP50R380CE ID032 5r380
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R380CE Data Sheet Rev. 2.0, 2010-08-27 Final Industrial & Multimarket 500V CoolMOS™ CE Power Transistor 1 IPP50R380CE, IPA50R380CE IPI50R380CE Description


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    PDF IPx50R380CE IPP50R380CE, IPA50R380CE IPI50R380CE 5R380CE 5R38 IPI50R380CE IPP50R380CE ID032 5r380

    IPP50R280Ce

    Abstract: IPD50R1K4CE IPD50R380CE IPD50R800CE
    Text: Product Brief Features 500V CoolMOS CE Power MOSFET The CoolMOS™ CE is a new technology platform of Infineon’s market leading high voltage power MOSFETs designed according to the revolutionary superjunction SJ principle. 500V CE portfolio provides all benefits of a fast switching SJ MOSFET while not


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    Current-Voltage Based Lookup-Table Diode Model

    Abstract: No abstract text available
    Text: Accurate Scalable Capacitance/Current-Voltage Based Lookup-Table Diode Model Ce-Jun Wei1, Yu Zhu, Hong Yin, D. Whitefield, Frank Gao, and Dylan Bartle SKYWORKS SOLUTION INC., 20 SYLVAN ROAD, WOBURN, MA 01801, USA 1 ce-jun.wei@skyworksinc.com ABSTRACT — A capacitance and Current look-up table based


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    3550C

    Abstract: 5KP Series 3Kp Transistor tvs cr 3050B r-6 package
    Text: Banned Substances Report Generated 05/19/05. Reference Report No.: CE/2005/52487A RoHS Compliance Product Type: Part Number Series: TVS Diodes R-6 package type 3KP series & 5KP series Test Result PART NAME NO. 1: PART NAME NO. 2: PART NAME NO. 3: BLACK PLASTIC BODY / WITH WHITE PRINTING (CE/2005/15132)


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    PDF CE/2005/52487A CE/2005/15132) CE/2005/52487) 00hromium 3050B 3550C 5KP Series 3Kp Transistor tvs cr 3050B r-6 package

    magnetron 2m210-m1

    Abstract: NL10250 power supply for magnetron magnetron 200 2M130 RM1C60D50 Magnetron 2 kW 2M130 OTTO FU10X38 IEC664
    Text: FX 740 T POWER SUPPLY UNIT FOR 2 KW MAGNETRON TECHNICAL NOTE Issue October 2004 FX 740 T CE Declaration of Conformity Dichiarazione di Conformità CE Manufacturer’s Name: Nome del Costruttore: Manufacturer’s Address: Indirizzo del Costruttore: ALTER s.r.l


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    PDF FX740 FX740T EN55011: 73/23/EEC. c42100 FX740T magnetron 2m210-m1 NL10250 power supply for magnetron magnetron 200 2M130 RM1C60D50 Magnetron 2 kW 2M130 OTTO FU10X38 IEC664

    thyristor control arc welding rectifier circuit

    Abstract: YJ1600 AIR FLOW DETECTOR CIRCUIT DIAGRAM WR340 waveguide directional coupler power supply for magnetron microwave oven magnetron circuit diagram electronic choke for tube light power supply for magnetron YJ1600 wiring diagram motor autotransformer SCHEMATIC POWER SUPPLY kw
    Text: SM1180T & TM060 SWITCHING POWER GENERATOR FOR 6 KW MAGNETRON TECHNICAL NOTE Issue June 2002 SM1180T & TM060 Dichiarazione di Conformità CE CE Declaration of Conformity Nome del Costruttore: Manufacturer’s Name: ALTER s.r.l Indirizzo del Costruttore: Manufacturer’s Address:


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    PDF SM1180T TM060 SM1180T thyristor control arc welding rectifier circuit YJ1600 AIR FLOW DETECTOR CIRCUIT DIAGRAM WR340 waveguide directional coupler power supply for magnetron microwave oven magnetron circuit diagram electronic choke for tube light power supply for magnetron YJ1600 wiring diagram motor autotransformer SCHEMATIC POWER SUPPLY kw

    2M265-M12

    Abstract: FX950T power supply for magnetron autotransformer wiring diagram 3KW HV transformer t 250v t250v 3KW GENERATOR magnetron 10 kw model m330
    Text: FX 950 T POWER SUPPLY UNIT FOR 3 KW MAGNETRON TECHNICAL NOTE Issue April 2004 FX 950 T CE Declaration of Conformity Dichiarazione di Conformità CE Manufacturer’s Name: Nome del Costruttore: Manufacturer’s Address: Indirizzo del Costruttore: ALTER s.r.l


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    PDF FX950 FX950T EN55011: 73/23/EEC. FX950T 2M265-M12 power supply for magnetron autotransformer wiring diagram 3KW HV transformer t 250v t250v 3KW GENERATOR magnetron 10 kw model m330

    Heft 10

    Abstract: MATSUA RELAIS Funkamateur Siemens Halbleiter
    Text: Wolfgang Sammet CE-Zeichen für Bauelemente? – Nein danke! Die Kennzeichnung von Produkten mit dem europäischen CE-Konformitätskennzeichen soll den freien Warenverkehr innerhalb der Europäischen Union EU vereinfachen. Prüfungen nach harmonisierten Normen stellen dabei in der


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    Untitled

    Abstract: No abstract text available
    Text: Wolfgang Sammet CE-Zeichen für Bauelemente? – Nein danke! Die Kennzeichnung von Produkten mit dem europäischen CE-Konformitätskennzeichen soll den freien Warenverkehr innerhalb der Europäischen Union EU vereinfachen. Prüfungen nach harmonisierten Normen stellen dabei in der


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    Untitled

    Abstract: No abstract text available
    Text: Light Emitting Diodes LNP129041 Pandel Display Units RG Type • Structure  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d d te te ow p:/ fo d l /w low isc isc nan nan ing ww in on on ce ce fo


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    Untitled

    Abstract: No abstract text available
    Text: ALPHABETICAL LIST OF SYMBOLS CD Q o P arasitic capac itan ce betw een drain and body Parasitic ca pacitan ce betw een drain and source o Parasitic ca pacitan ce betw een g ate and drain Q O C ds C qs Parasitic ca pacitan ce betw een g ate and source Cjss Input capacitan ce


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    Silicon Zener Diodes melf

    Abstract: 1N5225 1N5262 DL5225B DL5262B
    Text: DL5225B thru DL5262B SILICON PLANAR ZENER DIODES Cathode Mark S tandard Z e n e r v o lta g e to e ra n ce is 620% . A d d s u ffix “A" fo r 610% to le ra n ce and su ffix “ B" fo r 65% tole ran ce. O th er tole ran ce, non sta n d a rd and h ig h e r Z e n e r vo lta g e s


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    PDF DL5225B DL5262B DO-35 1N5225. 1N5262 kDO-35 200mA Silicon Zener Diodes melf 1N5225 1N5262 DL5262B

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    Abstract: No abstract text available
    Text: DL5225B thru DL5262B SILICON PLANAR ZENER DIODES Cathode Mark S tandard Z e n e r v o lta g e to e ra n ce is 620% . A d d s u ffix “A" fo r 610% to le ra n ce and su ffix “ B" fo r 65% tole ran ce. O th er tole ran ce, non sta n d a rd and h ig h e r Z e n e r vo lta g e s


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    PDF DL5225B DL5262B ZMM5225.

    BD400

    Abstract: TD-429 1N3712 in3712 TD-427 TD-423 TD-437 TD-408 TD-401 TD-422
    Text: TUNNEL DIODES MICROWAVE Cj :> Vp Vv Type’ Peak Current Typ. mA Peak Vo Itaiie Typ (mV) Valley Voltage Typ. (mV) V^ Forward Peak Voltage Typ. (mV) (Ip/lv) Peak to Valley Ratio Typ. —R Negative R e sista n ce Rs S e rie s R esista n ce Max. Junction C ap acitan ce


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    PDF TD-401 TD-402 TD-403 O-404 TD-405 TD-406 TD-407 TD-408 TD-409 TD-411 BD400 TD-429 1N3712 in3712 TD-427 TD-423 TD-437 TD-422

    1N5221

    Abstract: 1N5281 75nC
    Text: 1N5221 thru 1N5281 S IL IC O N P L A N A R Z E N E R D IO D E S Silicon Planar Zener Diodes S tandard Z e n e r v o lta g e to le ra n ce is ± 2 0 % .A d d s u ffix “A" fo r ± 1 0 % T o le ra n ce , su ffix “ B ' for ±5% tole ran ce, suffix “C " fo r ±2% to le ra n c e and suffix “ D ” for ±1% tole ran ce,


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    PDF 1N5221 1N5281 DO-35 200mA 1N5281 75nC

    1N5225

    Abstract: 1N5262 SL5225 SL5226 SL5227 SL5228 SL5229 SL5230 SL5262
    Text: SL5225 THRU SL5262 SILICON PLANAR ZENER DIODES, 500 mW, MINIMELF PACKAGE Silicon Planar Zener Diodes Standard Zener voltage tolerance is +20%. Add suffix "A” for ±10% to le ra n ce and su ffix “B" for ± 5 % tole ran ce. O th er A dm issible po w e r dissipation


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    PDF SL5225 SL5262 DO-35 1N5225. 1N5262. SL5225. SL5260 SL5261 SL5262 1N5225 1N5262 SL5226 SL5227 SL5228 SL5229 SL5230

    Untitled

    Abstract: No abstract text available
    Text: DL4728 thru DL4764 SILIC O N PLAN AR PO W ER Z E N E R DIODES Cathode Mark fo r use in s ta b ilizin g and clipp ing circu its w ith high pow er rating. S tan da rd Z e n e r vo lta g e to e ra n ce is 610% . Add 0 2 . 55 0 2 . 35 suffix "A " fo r 65% to le ra n ce . O th er to le ra n ce s a va ilab le


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    PDF DL4728 DL4764 DO-41 ZM4728.

    2n2082

    Abstract: 2N2152 2N2075 2N2076 2N2153 2N2156 2N3312 2N2079 2N2077 2N2078
    Text: germanium power transistors PNP TO-36 I c max — 5 to 30A V c e o js u s j — 20 to 65V Ii f e VcEO(SUS) V ebo (Volts) (Volts) Type# @ Ic /V ce (Min-Max @ A /V ) VcEISAT) @ Ic / I b (V @ A /A ) V be @ Ic / V ce (V @ A /V ) IC EV Pd @ @ V cE (m A @ V )


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    PDF 2N3311 2N3312 2N3313 2N33ff 2N3314 2N3315 1N5555 1N5555 1N5556 1N5557 2n2082 2N2152 2N2075 2N2076 2N2153 2N2156 2N2079 2N2077 2N2078

    Bridge diodes

    Abstract: No abstract text available
    Text: Whal HEWLETT iL'ttM PACKARD GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 F eatu res • Gold Tri-M etal System For Improved Reliability • Low C ap acitan ce • Low S eries R esistan ce • H igh C utoff F req u en cy


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    PDF HSCH-9301 HSCH-9351 HSCH-9351 HSCH-9301 Bridge diodes

    Untitled

    Abstract: No abstract text available
    Text: NEWS Updates on the world of Hitachi semiconductors Hitachi Introduces High-Performance Variable-ce Diodes for Mobile Communications itach i h as d ev elo p ed highp erform an ce variable-capac­ itance d iod es to im prove th e p erform an ce o f m ob ile co m m u n i­


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    PDF D-85622

    15N120CD1

    Abstract: 15N120 GC smd diode IXGT15N120BD1 smd diode Lf 047
    Text: □ IXYS Advanced Technical Information V DSS Low VrF, n IGBT with Diode CE sat IXGH/T 15N120BD1 IXGH/T 15N120CD1 ^C25 1200 V 30 A 1200 V 30 A V CE(sat) 3.2 V 3.8 V Combi Pack Symbol TestConditions Maximum Ratings V C ES T j = 25°C to 150°C 1200 V V CGR


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    PDF 15N120BD1 15N120CD1 O-268 15N120CD1 15N120 GC smd diode IXGT15N120BD1 smd diode Lf 047

    10j 5kV

    Abstract: No abstract text available
    Text: _SANKEN ELECTRIC CO LTD S5E D • 7^0741 GGOlDb? 4bû H S A K J 7 High Voltage Diodes for Distributor-less Ignitor I E x ce llen t heat re sista n ce for high tem perature operations I Anti-twist p ro c e sse d at time of resin molding along with ignition coil


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    PDF SHV-10J 100jiA 10j 5kV

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    Abstract: No abstract text available
    Text: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C


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    PDF 12N100U1 12N100AU1 O-247 IXGH12N100U1 IXGH12N100AU1

    sony tuners

    Abstract: C25 diode sony tuner radio 1T359 DIODE C2 7
    Text: SONY CORP/COMPONENT PRODS MTE 0 3 f i E 3f l3 D 000200=1 7 ISONY 1T359 S O N Y . Silicon Variable C ap a cita n ce Diode Description The 1 T 3 5 9 is a variable cap a cita n ce diode for electronic tuning, designed for radio or T V tuners. t- o 7 - n Package Outline


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    PDF 1T359 1T359 C2/C25) sony tuners C25 diode sony tuner radio DIODE C2 7