BSM150GB160D
Abstract: No abstract text available
Text: BSM150GB160D Transistors Half Bridge IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.6k V(BR)GES (V)20 I(C) Max. (A)200 Absolute Max. Power Diss. (W)1.25k Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case100m
|
Original
|
PDF
|
BSM150GB160D
Junc-Case100m
|
Untitled
Abstract: No abstract text available
Text: BSM150GB120D Transistors Half Bridge IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V) I(C) Max. (A)150 Absolute Max. Power Diss. (W)1.2k Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case100m
|
Original
|
PDF
|
BSM150GB120D
Junc-Case100m
|
IRFP250NPbF
Abstract: IRFP250N 035H IRFPE30 irfp250n* applications 4.5v to 100v input regulator
Text: PD - 95007A IRFP250NPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET Power MOSFET D VDSS = 200V RDS on = 0.075Ω
|
Original
|
PDF
|
5007A
IRFP250NPbF
O-247
IRFPE30
IRFP250NPbF
IRFP250N
035H
IRFPE30
irfp250n* applications
4.5v to 100v input regulator
|
IRFP260NPBF
Abstract: 4.5v to 100v input regulator
Text: PD - 95010 IRFP260NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l D l VDSS = 200V
|
Original
|
PDF
|
IRFP260NPbF
O-247
O-247AC
IRFPE30
IRFPE30
IRFP260NPBF
4.5v to 100v input regulator
|
IRFP260N applications
Abstract: IRFP260N 035H IRFPE30 4.5V to 100V input regulator
Text: PD - 94004B IRFP260N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.04Ω G ID = 50A
|
Original
|
PDF
|
94004B
IRFP260N
O-247
O-247AC
IRFPE30
IRFP260N applications
IRFP260N
035H
IRFPE30
4.5V to 100V input regulator
|
AN-994
Abstract: IRF630NL IRL3103L
Text: PD - 95047 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l HEXFET Power MOSFET
|
Original
|
PDF
|
IRF630NPbF
IRF630NSPbF
IRF630NLPbF
O-220
O-220AB
AN-994.
AN-994
IRF630NL
IRL3103L
|
AN-994
Abstract: IRF640NL IRL3103L
Text: PD - 95046 Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF640NPbF IRF640NSPbF IRF640NLPbF l HEXFET Power MOSFET
|
Original
|
PDF
|
IRF640NPbF
IRF640NSPbF
IRF640NLPbF
O-220
O-220AB
AN-994.
AN-994
IRF640NL
IRL3103L
|
IRFP250NPbF
Abstract: 035H IRFPE30 4.5v to 100v input regulator
Text: PD - 95007 IRFP250NPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET Power MOSFET D VDSS = 200V RDS on = 0.075Ω
|
Original
|
PDF
|
IRFP250NPbF
O-247
O-247AC
IRFPE30
IRFP250NPbF
035H
IRFPE30
4.5v to 100v input regulator
|
International Rectifier irf640n
Abstract: irf640n N-Channel MOSFET 200v
Text: PD - 94007 IRF640N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.15Ω G ID = 18A
|
Original
|
PDF
|
IRF640N
O-220
International Rectifier irf640n
irf640n
N-Channel MOSFET 200v
|
irfp250n
Abstract: 4.5V to 100V input regulator
Text: PD - 94008A IRFP250N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.075Ω G ID = 30A
|
Original
|
PDF
|
4008A
IRFP250N
O-247
O-247AC
IRFPE30
IRFPE30
irfp250n
4.5V to 100V input regulator
|
Untitled
Abstract: No abstract text available
Text: PD - 95007A IRFP250NPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET Power MOSFET D VDSS = 200V RDS on = 0.075Ω
|
Original
|
PDF
|
5007A
IRFP250NPbF
O-247
IRFPE30
|
IRFP260MPBF
Abstract: No abstract text available
Text: PD - 96293 IRFP260MPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l D l VDSS = 200V
|
Original
|
PDF
|
IRFP260MPbF
O-247
O-247AC
IRFP260MPBF
|
200v 3A schottky
Abstract: bc557 package sot23
Text: BC856A/BLT1 FM120-M+ THRU BC857A/B/CLT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors BC858A/B/CLT1 WILLAS Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers
|
Original
|
PDF
|
BC856A/BLTFM120-M
BC857A/B/CLT1
FM1200-M
BC858A/B/C
OD-123+
OD-123H
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
200v 3A schottky
bc557 package sot23
|
AN-994
Abstract: IRF1010 IRF530S IRF630NL IRL3103L 4.5V TO 100V INPUT REGULATOR
Text: PD - 95047A Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l Fifth Generation HEXFET Power MOSFETs from
|
Original
|
PDF
|
5047A
IRF630NPbF
IRF630NSPbF
IRF630NLPbF
O-220
O-220AB
AN-994.
AN-994
IRF1010
IRF530S
IRF630NL
IRL3103L
4.5V TO 100V INPUT REGULATOR
|
|
|
IRF630N
Abstract: IRF630NL IRF630NS
Text: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω
|
Original
|
PDF
|
94005B
IRF630N
IRF630NS
IRF630NL
O-220
AN-994.
O-220AB
IRF630N)
IRF630NS/L)
IRF630N
IRF630NL
IRF630NS
|
SEC irf630
Abstract: IRF630 SEC irf630 datasheet CIRF630 irf630 IRF630 p 4.5V to 100V input regulator 4.5V TO 100V INPUT REGULATORS
Text: IRF630 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high Dynamic dv/dt Rating speed power switching applications such as switching Repetitive Avalanche Rated regulators, converters, solenoid and relay drivers.
|
Original
|
PDF
|
IRF630
O-220
IRF630.
SEC irf630
IRF630 SEC
irf630 datasheet
CIRF630
irf630
IRF630 p
4.5V to 100V input regulator
4.5V TO 100V INPUT REGULATORS
|
IRFP250N
Abstract: irfp250n DRIVER 4.5v to 100v input regulator
Text: PD - 94008 IRFP250N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.075Ω G ID = 30A
|
Original
|
PDF
|
IRFP250N
O-247
commerci52-7105
IRFP250N
irfp250n DRIVER
4.5v to 100v input regulator
|
AN-994
Abstract: IRF630N IRF630NL IRF630NS
Text: PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l HEXFET Power MOSFET l D RDS on = 0.30Ω
|
Original
|
PDF
|
4005A
IRF630N
IRF630NS
IRF630NL
O-220
preferre2-7105
AN-994
IRF630N
IRF630NL
IRF630NS
|
AC Transformer 50A 100V inductance
Abstract: 035H IRFPE30 4.5v to 100v input regulator
Text: PD - 95010 IRFP260NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l D l VDSS = 200V
|
Original
|
PDF
|
IRFP260NPbF
O-247
O-247AC
IRFPE30
AC Transformer 50A 100V inductance
035H
IRFPE30
4.5v to 100v input regulator
|
irfp250m
Abstract: IRFP250MPBF 76T marking 4.5V to 100V input regulator
Text: PD - 96292 IRFP250MPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET Power MOSFET D VDSS = 200V RDS on = 0.075Ω
|
Original
|
PDF
|
IRFP250MPbF
O-247
O-247AC
irfp250m
IRFP250MPBF
76T marking
4.5V to 100V input regulator
|
irfp260m
Abstract: IRFP260MPBF IRF*260 4.5V to 100V input regulator
Text: PD - 96293 IRFP260MPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l D l VDSS = 200V
|
Original
|
PDF
|
IRFP260MPbF
O-247
O-247AC
irfp260m
IRFP260MPBF
IRF*260
4.5V to 100V input regulator
|
IRFP260N
Abstract: IRFP260N applications IRFP260N IR IRFP260N data sheet Mosfet IRFP260N to irfp260n display 7 segmentos 035H IRFPE30 4.5V to 100V input regulator
Text: PD - 94004B IRFP260N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.04Ω G ID = 50A
|
Original
|
PDF
|
94004B
IRFP260N
O-247
IRFPE30
IRFP260N
IRFP260N applications
IRFP260N IR
IRFP260N data sheet
Mosfet IRFP260N
to irfp260n
display 7 segmentos
035H
IRFPE30
4.5V to 100V input regulator
|
diode byx 32
Abstract: diode byx diode byx 66-1000 DIODE REDRESSEMENT Diodes de redressement LA 7123 byx 21 diodes redressement thomson alimentation decoupage t03h
Text: S G STC S -¡-THOMSON D | 7 ^ 2 3 7 ÜODaaôT BYX 66-600, R BYX 66-1000, (R) O THOMSON-CSF 'DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02289 d r^oi-n \ HIGH VOLTAGE SUPERSWITCH RECTIFIERS
|
OCR Scan
|
PDF
|
712TE37
180cm
diode byx 32
diode byx
diode byx 66-1000
DIODE REDRESSEMENT
Diodes de redressement
LA 7123
byx 21
diodes redressement thomson
alimentation decoupage
t03h
|
esm diodes
Abstract: 181800r c81 004 cb33 182100 REDRESSEMENT ESM182-100R 87400 DRT76 C701
Text: C B 1 9 7 (C B 1 2 6 ) (C B 3 3 ) (T O 126 ) Fast recovery silicon re c tifie r diodes — t rr 3 0 0 ns D io d e s d e re d re s s e m e n t ra p id e s a u s ilic iu m — t r r 3 0 0 ns Case Type B oîtier V RRM (V) T (vjï (°C) max •f s m (A) l 0 <A)
|
OCR Scan
|
PDF
|
D029pl.
lTamb50Â
D027pl.
esm diodes
181800r
c81 004
cb33
182100
REDRESSEMENT
ESM182-100R
87400
DRT76
C701
|