IRF630N
Abstract: IRF630NL IRF630NS
Text: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω
|
Original
|
94005B
IRF630N
IRF630NS
IRF630NL
O-220
AN-994.
O-220AB
IRF630N)
IRF630NS/L)
IRF630N
IRF630NL
IRF630NS
|
PDF
|
IRF630N
Abstract: IRF630NL IRF630NS
Text: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω
|
Original
|
94005B
IRF630N
IRF630NS
IRF630NL
O-220
AN-994.
O-220AB
IRF630N)
IRF630NS/L)
IRF630N
IRF630NL
IRF630NS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω
|
Original
|
94005B
IRF630N
IRF630NS
IRF630NL
O-220
AN-994.
O-220AB
IRF630N)
IRF630NS/L)
|
PDF
|