transistor TL131
Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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PTFB212507SH
PTFB212507SH
200-watt
H-34288G-4/2
transistor TL131
TL231
tl127
TL130
tl131
transistor tl120
8C802
tl-130
LM78L05ACMND
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transistor di 960
Abstract: No abstract text available
Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications
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PTFA092211EL
PTFA092211FL
PTFA092211EL
PTFA092211FL
220-watt,
H-34288-2
transistor di 960
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BTS5672E
Abstract: transistor JSW 12
Text: Data Sheet, Rev. 1.0, Jan. 2008 SPOC - BTS5672E SPI Power Controller Automotive Power SPOC - BTS5672E Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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BTS5672E
BTS5672E
transistor JSW 12
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tl249
Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier
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PTFB182503EL
PTFB182503FL
PTFB182503EL
PTFB182503FL
240-watt
H-33288-6,
H-34288-6,
tl249
tl2472
TL244
TRANSISTOR tl131
TL251
tl239
PTFB182503
tl250
TL242
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a2324
Abstract: PTFA192401E PTFA192401F RF35 RO4350 BCP56 LM7805 PTFA192401F V4
Text: PTFA192401E PTFA192401F Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,
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PTFA192401E
PTFA192401F
PTFA192401E
PTFA192401F
240-watt
H-36260-2
H-37260-2
a2324
RF35
RO4350
BCP56
LM7805
PTFA192401F V4
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PTFB212507SH
Abstract: No abstract text available
Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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PTFB212507SH
PTFB212507SH
200-watt
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Untitled
Abstract: No abstract text available
Text: PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 30 W, 28 V, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation formats
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PTMA080302M
PTMA080302M
30-watt,
20-lead,
PG-DSO-20-63
50-ohm
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diode c723
Abstract: PTFA072401FL VARIABLE RESISTOR 2K LM7805 PTFA072401EL RO4350 BCP56 LM7805 voltage regulator packages DD 127 D TRANSISTOR
Text: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to
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PTFA072401EL
PTFA072401FL
PTFA072401EL
PTFA072401FL
240-watt
H-33288-2
H-34288-2
diode c723
VARIABLE RESISTOR 2K
LM7805
RO4350
BCP56
LM7805 voltage regulator packages
DD 127 D TRANSISTOR
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C66065-A2326-C001-01-0027
Abstract: transistor a102 r025 capacitor elna 50v INFINEON schematic diagram 200B BCP56 LM7805 PTFA070601E PTFA070601F
Text: PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz Description The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770
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PTFA070601E
PTFA070601F
PTFA070601E
PTFA070601F
60-watt
H-36265-2
H-37265-2
C66065-A2326-C001-01-0027
transistor a102
r025 capacitor
elna 50v
INFINEON schematic diagram
200B
BCP56
LM7805
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c102 TRANSISTOR
Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency
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PTFA220041M
PTFA220041M
PG-SON-10
c102 TRANSISTOR
LM7805 M SMD
R804
c103 TRANSISTOR
transistor c107 m
TRANSISTOR c801
NFM18PS105R0J3
TRANSISTOR c104
TL217
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a2324
Abstract: H-37260-2 elna 50v LM7805 05 BCP56 LM7805 PTFA092201E PTFA092201F RO4350
Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced
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PTFA092201E
PTFA092201F
PTFA092201E
PTFA092201F
220-watt,
H-36260-2
H-37260-2
a2324
H-37260-2
elna 50v
LM7805 05
BCP56
LM7805
RO4350
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PTMA080152M
Abstract: VARIABLE RESISTOR 2K BCP56 RO4350
Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz Description The PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband
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PTMA080152M
PTMA080152M
15-watt,
20-lead
PG-DSO-20-63
50-ohm
10-ohm
VARIABLE RESISTOR 2K
BCP56
RO4350
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100uf HFK
Abstract: HFK CAPACITOR 100 HFK capacitor
Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications
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PTFA092211EL
PTFA092211FL
PTFA092211EL
PTFA092211FL
220-watt,
H-33288-2
H-34288-2
100uf HFK
HFK CAPACITOR
100 HFK capacitor
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TL107 linear
Abstract: TRANSISTOR tl131
Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805
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PTFB182557SH
PTFB182557SH
250-watt
H-34288G-4/2
TL107 linear
TRANSISTOR tl131
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Untitled
Abstract: No abstract text available
Text: PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz Description The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz
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PTFA142401EL
PTFA142401FL
PTFA142401EL
PTFA142401FL
240-watt
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transistor c735
Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103
Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency
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PTFA220041M
PTFA220041M
PG-SON-10
transistor c735
ATC100A120FW150XB
TRANSISTOR c104
TL107
c103 m TRANSISTOR
c103 TRANSISTOR
TRANSISTOR C802
C735 transistor
TRANSISTOR C107
TRANSISTOR C103
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ISO26262
Abstract: TLE7189QK TLE7189F TLE7189 Thermal Shut Down Functioned MOSFET LQFP-64 PG-LQFP-64-17-PO ASIL MARKING
Text: Data Sheet, Rev. 2.0, July 2009 TLE7189QK P R O - S I L TM 3 - P h a s e B r i d g e D r i v e r I C Automotive Power TLE7189QK Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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TLE7189QK
ISO26262
TLE7189QK
TLE7189F
TLE7189
Thermal Shut Down Functioned MOSFET
LQFP-64
PG-LQFP-64-17-PO
ASIL MARKING
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PTMA210404FL
Abstract: R250 INFINEON marking amplifier
Text: Preliminary PTMA210404FL Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 40 W, 1800 – 2200 MHz Description The PTMA210404FL integrates two wideband, 20-watt, 2-stage LDMOS integrated amplifiers into an open-cavity, ceramic package.
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PTMA210404FL
PTMA210404FL
20-watt,
PTMA210404FL*
H-34248-12
R250
INFINEON marking amplifier
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LM7805
Abstract: BCP56 PTFA212401E PTFA212401F
Text: PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier
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PTFA212401E
PTFA212401F
PTFA212401E
PTFA212401F
240-watt
H-36260-2
H-37260-2
LM7805
BCP56
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PTMA210152
Abstract: PTMA210152M PCC104bct-nd 210152 PTMA210152M V1 PCC104BCTND RO4350 3224W-202ETR-ND P00ECT-ND PCE3718CT-ND
Text: PTMA210152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 – 2200 MHz Description The PTMA210152M is a wideband, matched, 15-watt, 2-stage LDMOS integrated amplifier intended for wideband driver applications in the 1800 to 2200 MHz band. This device is offered in
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PTMA210152M
PTMA210152M
15-watt,
20-lead
PTMA210152
PCC104bct-nd
210152
PTMA210152M V1
PCC104BCTND
RO4350
3224W-202ETR-ND
P00ECT-ND
PCE3718CT-ND
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Untitled
Abstract: No abstract text available
Text: PTFA080551E PTFA080551F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz Description The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the
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PTFA080551E
PTFA080551F
PTFA080551E
PTFA080551F
55-watt
H-36265-2
H-37265-2
CDMA2000
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Untitled
Abstract: No abstract text available
Text: PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier
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PTFA212401E
PTFA212401F
PTFA212401F
240-watt
H-36260-2
H-37260-2
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pof infineon
Abstract: 650nm LED
Text: Data Sheet Version 1.0, November 2006 SPFEIM100_G Fiber Optic Transceiver For Fast Ethernet Automotive, Industrial & Multimarket Never stop thinking Data Sheet, V1.0, November 2006 SPFEIM100_G Revision History: V1.0 2006-November-21 Previous Version: V0.9
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SPFEIM100
2006-November-21
2006-August-29
D-85579
C66065-A2297-A001-xx-0027
pof infineon
650nm LED
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diode C728
Abstract: RFP100200-4Y502 600S0R7BT CD 5888 IC JESD22-A114F RFP100200-4Y50-2 RFP-100200-4Y50-2 2A1306-3 PTMA210404FL R250
Text: PTMA210404FL Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 40 W, 1800 – 2200 MHz Description The PTMA210404FL integrates two wideband, 20-watt, 2-stage LDMOS integrated amplifiers into an open-cavity, ceramic package.
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PTMA210404FL
PTMA210404FL
20-watt,
H-34248-12
diode C728
RFP100200-4Y502
600S0R7BT
CD 5888 IC
JESD22-A114F
RFP100200-4Y50-2
RFP-100200-4Y50-2
2A1306-3
R250
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