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    PTFB182557SH Search Results

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    PTFB182557SH Price and Stock

    MACOM PTFB182557SH-V1-R250

    RF MOSFET LDMOS
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    DigiKey PTFB182557SH-V1-R250 Reel 250
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    • 1000 $108.72224
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    PTFB182557SH Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFB182557SHV1R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF

    PTFB182557SH Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TL107 linear

    Abstract: TRANSISTOR tl131
    Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805


    Original     		PTFB182557SH PTFB182557SH 250-watt H-34288G-4/2 TL107 linear TRANSISTOR tl131 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET specifically designed for use in Doherty cellular power amplifier applications in the 1805


    Original     		PTFB182557SH PTFB182557SH 250-watt PDF

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PTFB183408SV PTFB183408SV 340-watt PDF