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    C6606 Price and Stock

    Advantech Co Ltd IPC-6606P3-25BE

    IPC-6606 W/PAC-6106P3 & 80+ 250W
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    Advantech Co Ltd IPC-6606BP-30CE

    SMALL DESKTOP 6-SLOT IPC BAREBON
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    Advantech Co Ltd IPC-6606BP-25BE

    IPC-6606 W/O BP WITH 80+ 250W PS
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    Vishay Roederstein MKP1848C66060JY2

    CAP FILM 60UF 5% 600VDC RADIAL
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    Vishay Roederstein MKP1848C66060JY5

    CAP FILM 60UF 5% 600VDC RADIAL
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    C6606 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor TL131

    Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND

    transistor di 960

    Abstract: No abstract text available
    Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


    Original     		PDF PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-34288-2 transistor di 960

    BTS5672E

    Abstract: transistor JSW 12
    Text: Data Sheet, Rev. 1.0, Jan. 2008 SPOC - BTS5672E SPI Power Controller Automotive Power SPOC - BTS5672E Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF BTS5672E BTS5672E transistor JSW 12

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242

    TAIMAG HD 081 A

    Abstract: ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627
    Text: 5 4 3 2 1 G1S: MEROM/965-PM/ICH8-M/NB8P-GS BLOCK DIAGRAM CLOCK GEN CK505 ICS9LPR363CGLF-T D Merom CPU FAN + THERMAL SENSOR 478B uFCPGA VRAM CH.C GDDR3 *2 LVDS PAGE 45 PAGE 46 PAGE 50 FSB 800 MHz 136 FBGA PAGE 72 NVIDIA NB8P-GS CRT PAGE 3-6 VRAM CH.A GDDR3 *2


    Original     		PDF MEROM/965-PM/ICH8-M/NB8P-GS CK505) ICS9LPR363CGLF-T 965PM 667MHz RTL8111B ISL6227 FDS2501 TPS51116 MAX1844 TAIMAG HD 081 A ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627

    Q8031

    Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
    Text: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED


    Original     		PDF ITP700FLEX LIP-SM-M42 Q8031 ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H

    RT9713

    Abstract: C6091 C6093 R61531 c6090 C6085 c6092 inventec vail 1.0 Inventec 070912FR015S200ZU
    Text: VAIL SI2-BUILD-FINAL 2004.08.31 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : VAIL1.0 SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX2 67 TABLE OF CONTENTS


    Original     		PDF V/5V/12V) 31-Aug-2004 CN6035 RT9713 C6091 C6093 R61531 c6090 C6085 c6092 inventec vail 1.0 Inventec 070912FR015S200ZU

    RTL8211E

    Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
    Text: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


    Original     		PDF

    PP3V42G3H

    Abstract: temperature controller CHB 402 manual I251 diode c3909 ar9350 PP3V42 R859 p66 apple temperature controller CHB 402 U6700
    Text: 8 6 7 REV .csa Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


    Original     		PDF ITP700FLEX PP3V42G3H temperature controller CHB 402 manual I251 diode c3909 ar9350 PP3V42 R859 p66 apple temperature controller CHB 402 U6700

    ar9350

    Abstract: Apple 820-1881 p51 apple diode sot 143 s5 C7555 PP3V42G3H 101B SOT23-6 ah530 R7549 MLB-EVT
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MLB,M1 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE D DATE 428208PRODUCTION RELEASED 03/04/06


    Original     		PDF ITP700FLEX ar9350 Apple 820-1881 p51 apple diode sot 143 s5 C7555 PP3V42G3H 101B SOT23-6 ah530 R7549 MLB-EVT

    ITE 8511

    Abstract: ITE8511 C6290 U606-3 C-6533 C6384 asus u6042 B C6113 U6048
    Text: 5 4 3 2 1 T76S: MEROM/965-PM/ICH8-M/NB8M-SE BLOCK DIAGRAM CLOCK GEN. ICS9LPR363CGLF-T GDDR2 VRAM*4 16X16 D Merom PAGE 21 D 478B uFCPGA FAN + Thermal sensor 84 FBGA PAGE 51 PAGE 3,4,5 PAGE 36 FSB 800 MHz LVDS nVIDIA NB8M-SE PAGE 34 CRT PAGE 35 533 BGA POWER


    Original     		PDF MEROM/965-PM/ICH8-M/NB8M-SE 16X16) ICS9LPR363CGLF-T 965PM 667MHz RTL8111B ALC660D PMN45EN FDW2501 MAX8632 ITE 8511 ITE8511 C6290 U606-3 C-6533 C6384 asus u6042 B C6113 U6048

    a2324

    Abstract: PTFA192401E PTFA192401F RF35 RO4350 BCP56 LM7805 PTFA192401F V4
    Text: PTFA192401E PTFA192401F Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,


    Original     		PDF PTFA192401E PTFA192401F PTFA192401E PTFA192401F 240-watt H-36260-2 H-37260-2 a2324 RF35 RO4350 BCP56 LM7805 PTFA192401F V4

    PTFB212507SH

    Abstract: No abstract text available
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB212507SH PTFB212507SH 200-watt

    Untitled

    Abstract: No abstract text available
    Text: PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 30 W, 28 V, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation formats


    Original     		PDF PTMA080302M PTMA080302M 30-watt, 20-lead, PG-DSO-20-63 50-ohm

    C66065-A2326-C001-01-0027

    Abstract: transistor a102 r025 capacitor elna 50v INFINEON schematic diagram 200B BCP56 LM7805 PTFA070601E PTFA070601F
    Text: PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz Description The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770


    Original     		PDF PTFA070601E PTFA070601F PTFA070601E PTFA070601F 60-watt H-36265-2 H-37265-2 C66065-A2326-C001-01-0027 transistor a102 r025 capacitor elna 50v INFINEON schematic diagram 200B BCP56 LM7805

    c102 TRANSISTOR

    Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PDF PTFA220041M PTFA220041M PG-SON-10 c102 TRANSISTOR LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217

    a2324

    Abstract: H-37260-2 elna 50v LM7805 05 BCP56 LM7805 PTFA092201E PTFA092201F RO4350
    Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced


    Original     		PDF PTFA092201E PTFA092201F PTFA092201E PTFA092201F 220-watt, H-36260-2 H-37260-2 a2324 H-37260-2 elna 50v LM7805 05 BCP56 LM7805 RO4350

    PTMA080152M

    Abstract: VARIABLE RESISTOR 2K BCP56 RO4350
    Text: PTMA080152M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 15 W, 700 – 1000 MHz Description The PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage LDMOS integrated power amplifier intended for wideband


    Original     		PDF PTMA080152M PTMA080152M 15-watt, 20-lead PG-DSO-20-63 50-ohm 10-ohm VARIABLE RESISTOR 2K BCP56 RO4350

    100uf HFK

    Abstract: HFK CAPACITOR 100 HFK capacitor
    Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications


    Original     		PDF PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-33288-2 H-34288-2 100uf HFK HFK CAPACITOR 100 HFK capacitor

    TL107 linear

    Abstract: TRANSISTOR tl131
    Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805


    Original     		PDF PTFB182557SH PTFB182557SH 250-watt H-34288G-4/2 TL107 linear TRANSISTOR tl131

    TRANSISTOR tl131

    Abstract: No abstract text available
    Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include


    Original     		PDF PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131

    Untitled

    Abstract: No abstract text available
    Text: PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz Description The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz


    Original     		PDF PTFA142401EL PTFA142401FL PTFA142401EL PTFA142401FL 240-watt

    transistor c735

    Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PDF PTFA220041M PTFA220041M PG-SON-10 transistor c735 ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103

    ISO26262

    Abstract: TLE7189QK TLE7189F TLE7189 Thermal Shut Down Functioned MOSFET LQFP-64 PG-LQFP-64-17-PO ASIL MARKING
    Text: Data Sheet, Rev. 2.0, July 2009 TLE7189QK P R O - S I L TM 3 - P h a s e B r i d g e D r i v e r I C Automotive Power TLE7189QK Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF TLE7189QK ISO26262 TLE7189QK TLE7189F TLE7189 Thermal Shut Down Functioned MOSFET LQFP-64 PG-LQFP-64-17-PO ASIL MARKING