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    C5 SMD TRANSISTOR Search Results

    C5 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C5 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c3 smd transistor

    Abstract: smd transistor C3 SMD M1 DIODE smd transistor r2 smd transistor 560 SMD transistor 23 SMD capacitor smd diode M1 m1 smd transistor SMD capacitor package
    Text: STEVAL-IFS005V1 BILL OF MATERIAL Component C1 C2 C3 C4 C5 DL1 IC1 L1 M1 Q1 R1 R2 R3 R4 * Value 470pF 470pF 1nF LV 0.1µF 50V 1µF 50V LED DIODE TDA0161 330uH Screw Plug 3 Position MMBT3904 18 KΩ 120 Ω 560 Ω 2.2 KΩ Description SMD Capacitor 1206 Size


    Original     		PDF STEVAL-IFS005V1 470pF TDA0161 330uH MMBT3904 TDA0161FP B82462-A4334K c3 smd transistor smd transistor C3 SMD M1 DIODE smd transistor r2 smd transistor 560 SMD transistor 23 SMD capacitor smd diode M1 m1 smd transistor SMD capacitor package

    ATC 600F

    Abstract: NPTB00004 transistors ND C9 GRM188R72A104KA35D ERJ2GE0R00X 01UF 100UF 10UF AD-015 Nitron
    Text: AD-015 AD-015 Nitronex NPTB00004 GaN HEMT Power Transistors Application Board Tuned for 5.1 to 5.2GHz Application design AD-015 with a Nitronex NPTB00004 GaN HEMT device has approximately 29dBm average RF power under single carrier OFDM WiMax modulation1 and approximately 11dB gain with 23% drain efficiency at 2.5% EVM


    Original     		PDF AD-015 AD-015 NPTB00004 29dBm 150mA. 100ma AD-015: ATC 600F transistors ND C9 GRM188R72A104KA35D ERJ2GE0R00X 01UF 100UF 10UF Nitron

    ATC 600F

    Abstract: NPTB00004 AD-016 100uf 16v murata tantalum GRM188R72A104KA35D 490-3285-2-ND ERJ2GE0R00X P033A 06031C103KAT2A Cer cap 100uf
    Text: AD-016 AD-016 Nitronex NPTB00004 GaN HEMT Power Transistors Application Board Tuned for 5.7 to 5.8GHz Application design AD-016 with a Nitronex NPTB00004 GaN HEMT device has approximately 27dBm average RF power under single carrier OFDM WiMax modulation1 and approximately 10dB gain with 23% drain efficiency at 2.5% EVM


    Original     		PDF AD-016 AD-016 NPTB00004 27dBm 150mA. 100ma AD-016: ATC 600F 100uf 16v murata tantalum GRM188R72A104KA35D 490-3285-2-ND ERJ2GE0R00X P033A 06031C103KAT2A Cer cap 100uf

    capacitor 2200 uF

    Abstract: transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08 ACPR1980 ACPR400 ACPR600 ACPR750
    Text: BLF4G10-160 UHF power LDMOS transistor Rev. 01 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB test circuit.


    Original     		PDF BLF4G10-160 ACPR400 ACPR600 ACPR750 ACPR1980 BLF4G10-160 capacitor 2200 uF transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08

    transistor 2N2222 SMD

    Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980
    Text: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF4G10LS-160 ACPR400 ACPR600 BLF4G10LS-160 transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980

    L05 SMD

    Abstract: w05 smd transistor SMD W05 W05 transistor W05 SMD L6 PHILIPS CMP401 CMP281 CMP263 CMP286
    Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-770 : T. Buss : 20-Jan-00 : P.G. Transistors & Diodes, Development 900MHz LOW NOISE AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG410W Double Poly


    Original     		PDF RNR-T45-96-B-770 20-Jan-00 900MHz BFG410W BFG410W 900MHz. 900MHz CMP180 CMP210 L05 SMD w05 smd transistor SMD W05 W05 transistor W05 SMD L6 PHILIPS CMP401 CMP281 CMP263 CMP286

    Philips npo 0805

    Abstract: 5Ghz lna transistor datasheet BFG425W 0805CS Series BFG425W APPLICATION philips satellite systems w2 smd transistor 0805CS CMP230 CMP231
    Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0584 : T.F. Buss : 16-07-97 : P.G. Transistors & Diodes, Development 1.5GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly


    Original     		PDF RNR-T45-97-B-0584 BFG425W BFG425W CMP266 s10mi CMP403 CMP351 CMP250 CMP270 Philips npo 0805 5Ghz lna transistor datasheet 0805CS Series BFG425W APPLICATION philips satellite systems w2 smd transistor 0805CS CMP230 CMP231

    transistor l7805cv

    Abstract: in4148 smd diode l7805cv transistor ots-16-03 8B TRANSISTOR SMD smd transistor A1 smd diode code A2 SMD BERG header 805 smd code capacitor datasheet L7805CV
    Text: Date: 4-May-07 PCB reference: STEVAL-IFS003V1 Date: March, 20 2006 Company: S Contact person: Nishant Omar E-mail: nishant.omar@st.com Phone:+91 0120 4003603 Reference 1 ST7 - MCU 1 NAND-Flash 1 Voltage Regulator 1 Real Time Clock 1 MOSFET 1 Diode 1 npn Transistor


    Original     		PDF 4-May-07 STEVAL-IFS003V1 ST7F651AR6T1 NAND512W3A L7805 M41T81S STB100NF IN4148 2STR1215 TQFP64 transistor l7805cv in4148 smd diode l7805cv transistor ots-16-03 8B TRANSISTOR SMD smd transistor A1 smd diode code A2 SMD BERG header 805 smd code capacitor datasheet L7805CV

    smd transistor A6

    Abstract: transistor SMD A6
    Text: DISCRETE SEMICONDUCTORS DAT M3D392 BLF647 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 02 2001 Nov 27 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES • High power gain


    Original     		PDF M3D392 BLF647 OT540A SCA73 613524/03/pp16 smd transistor A6 transistor SMD A6

    L05 SMD

    Abstract: CMP266 RNR-T45-96-B-1025 L6 PHILIPS transistor smd Sb1 BFG425W CMP401 BFG400W CMP409 CMP231
    Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-1025 : T.F. Buss : 10 Dec. 1996 : P.G. Transistors & Diodes, Development IMPROVED IP3 BEHAVIOUR OF THE 900MHz LOW NOISE AMPLIFIER WITH THE BFG425W


    Original     		PDF RNR-T45-96-B-1025 900MHz BFG425W RNR-T45-96-B-771 BFG425W 900MHz, 900MHz: CMP257 CMP383 L05 SMD CMP266 RNR-T45-96-B-1025 L6 PHILIPS transistor smd Sb1 CMP401 BFG400W CMP409 CMP231

    rogers 5880

    Abstract: UT70-25 1008CS-102XKBC BLF647 transistor 2164 transistor 2001 H1 rf transistor smd pages 2222 595 smd transistor w1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 02 2001 Nov 27 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 FEATURES PINNING - SOT540A • High power gain


    Original     		PDF M3D392 BLF647 OT540A SCA73 613524/03/pp16 rogers 5880 UT70-25 1008CS-102XKBC BLF647 transistor 2164 transistor 2001 H1 rf transistor smd pages 2222 595 smd transistor w1

    Led driver schematic

    Abstract: AN2259 1w led driver 12vdc 350ma led driver circuit L5973D L5973d application note smd transistor equivalent table BRIDGE RECTIFIER SMD SMD TRANSISTOR D2 L5973D equivalent
    Text: AN2259 APPLICATION NOTE High intensity LED driver using the L5970D/L5973D Introduction High brightness LEDs are becoming a prominent source of light and often have better efficiency and reliability than conventional light sources. While LEDs can operate from an energy source


    Original     		PDF AN2259 L5970D/L5973D Led driver schematic AN2259 1w led driver 12vdc 350ma led driver circuit L5973D L5973d application note smd transistor equivalent table BRIDGE RECTIFIER SMD SMD TRANSISTOR D2 L5973D equivalent

    UHF TRANSISTOR

    Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
    Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV0405-175 429-HVVi EG-01-DS10B 05/XX/09 UHF TRANSISTOR J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet

    MGH80

    Abstract: TRANSISTOR SMD catalog AN98017 AN98020 AN98026 BLV909 SMD TRANSISTOR
    Text: APPLICATION NOTE 9 W Linear Class-AB Amplifier with the BLV909 for 935 − 960 MHz AN98020 Philips Semiconductors 9 W Linear Class-AB Amplifier with the BLV909 for 935 − 960 MHz CONTENTS 1 INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER BACKGROUND 4 AMPLIFIER PERFORMANCE


    Original     		PDF BLV909 AN98020 BLV909. SCA57 MGH80 TRANSISTOR SMD catalog AN98017 AN98020 AN98026 SMD TRANSISTOR

    smd-transistor DATA BOOK

    Abstract: SMD Transistor rt/duroid 6006 TRANSISTOR SMD catalog transistor SMD DK Philips 2222-581 smd-transistor -1.am Duroid 6006 SMD Transistor 6f smd transistor l6
    Text: APPLICATION NOTE 4 W Linear Class-AB amplifier with the BLV2042 for 1930 −1990 MHz AN98018 Philips Semiconductors 4 W Linear Class-AB amplifier with the BLV2042 for 1930 −1990 MHz CONTENTS 1 INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER DESCRIPTION


    Original     		PDF BLV2042 AN98018 BLV2042. 199lding SCA57 smd-transistor DATA BOOK SMD Transistor rt/duroid 6006 TRANSISTOR SMD catalog transistor SMD DK Philips 2222-581 smd-transistor -1.am Duroid 6006 SMD Transistor 6f smd transistor l6

    thermistor 100k

    Abstract: 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E
    Text: Design Application Note AN-090 2 x SLD-1026Z LDMOS Application Circuits Abstract Bias Discussion Sirenza Microdevices' SLD-1026Z is a high performance LDMOS transistor designed for operation up to 2.7 GHz. This application note demonstrates balanced configuration application circuits operating in the 800,


    Original     		PDF AN-090 SLD-1026Z EAN-105860 thermistor 100k 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E

    TEKELEC

    Abstract: 1800 ldmos sot540a transistor 2001 H1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D392 BLF647 BLF647 OT540A MBK777 budgetnum/printrun/ed/pp15 TEKELEC 1800 ldmos sot540a transistor 2001 H1

    CW 7805

    Abstract: CW 7805 regulator regulator CW 7805 TRANSISTOR CW 7805 5Bp smd transistor data smd-transistor 5bp 5Bp smd 7805 smd SMD DIODE gp 317 smd-transistor DATA BOOK
    Text: MOTOROLA Order this document by TP3006/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3006 The TP3006 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and


    Original     		PDF TP3006/D TP3006 TP3006 TP3006/D* CW 7805 CW 7805 regulator regulator CW 7805 TRANSISTOR CW 7805 5Bp smd transistor data smd-transistor 5bp 5Bp smd 7805 smd SMD DIODE gp 317 smd-transistor DATA BOOK

    5BP smd transistor data

    Abstract: 5Bp smd smd-transistor DATA BOOK 725 REGULATOR motorola smd-transistor 5bp 7805 smd Datasheet of ic 7805 SMD TRANSISTOR smd-transistor -1.am 8 PIN SMD IC 305 Equivalent
    Text: MOTOROLA Order this document by TP3061/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor TP3061 The TP3061 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold


    Original     		PDF TP3061/D TP3061 TP3061 TP3060 TP3061/D* 5BP smd transistor data 5Bp smd smd-transistor DATA BOOK 725 REGULATOR motorola smd-transistor 5bp 7805 smd Datasheet of ic 7805 SMD TRANSISTOR smd-transistor -1.am 8 PIN SMD IC 305 Equivalent

    J152-ND

    Abstract: No abstract text available
    Text: EVALUATION KIT >LL'&''#,&&#;A RF Power Transistor Part Number: HVV1011-600 Evaluation Kit Part Number: HVV1011-600-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at sales@adsemi.com Contents: - PCB Component Placement Diagram


    Original     		PDF HVV1011-600 HVV1011-600-EK 712-1388-1-ND 478-2646-1-ND 399-1222-2-ND 399-1236-2-ND 478-3134-1-ND PCE3484TR-ND HV800 FXT000116 J152-ND

    BLF6G10LS-160RN

    Abstract: TRANSISTOR SMD BV BLF6G10-160RN RF35 nxp TRANSISTOR SMD 13
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN BLF6G10LS-160RN TRANSISTOR SMD BV RF35 nxp TRANSISTOR SMD 13

    22 pf TEKELEC

    Abstract: BLF647 transistor 2001 H1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Preliminary specification 2001 Mar 27 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D392 BLF647 BLF647 OT540A MBK777 budgetnum/printrun/ed/pp15 22 pf TEKELEC transistor 2001 H1

    transistor 9575

    Abstract: BLF6G10-160RN BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 — 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN transistor 9575 BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1

    Untitled

    Abstract: No abstract text available
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN