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    C3N TRANSISTOR Search Results

    C3N TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C3N TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VGA001

    Abstract: No abstract text available
    Text: VGA001 Variable Gain Amplifier • 100Hz - 100MHz Variable Gain Amplifier • Fully differential input and output • Can be used as single-ended input to differential output • 3.3V Supply • Designed in C3N 0.35µ process (See General Notes 1) 1.0 Description


    Original     		PDF VGA001 100Hz 100MHz 600uV 100MHz.

    MMBT3906

    Abstract: MMBT3906Q-7-F transistor marking c3n K3N diodes npn k3n MMBT3906Q MMBT3906-13-F
    Text: MMBT3906 40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)


    Original     		PDF MMBT3906 MMBT3904) AEC-Q101 J-STD-020 MIL-STD-202, DS30059 MMBT3906 MMBT3906Q-7-F transistor marking c3n K3N diodes npn k3n MMBT3906Q MMBT3906-13-F

    Mls 7 segment

    Abstract: No abstract text available
    Text: KS0010 4-Line MLS Multi Line Selection Power Supply IC FOR STN LCD May. 1999. Ver. 0.0 Prepared by: Jun-Seok, Han jeongb@samsung.co.kr Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express


    Original     		PDF KS0010 KS0010 Mls 7 segment

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C13FU T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 r 1 3 F II • ■ u 'm mm ■ mm ■ 'mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C13FU

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TENTATIVE 2SB1667 SM TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Low Collector Saturation Voltage : VCE (sat) = —1.7V (Max.) (IC = - 3 A , Iß — —0.3A) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SB1667 ----10Vf 20/zs

    Untitled

    Abstract: No abstract text available
    Text: 2SC5351 TOSHIBA TO SH IBA TRANSISTOR i SILICON NPN TRIPLE DIFFUSED TYPE <;r >5 3 R1 HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER A N D POW ER SUPPLY t • High Voltage : V ç e O~450V High Speed : tr = 0.5/¿s Max. , tf= 0.3//s (Max.) (Iç = 0.8A)


    OCR Scan     		PDF 2SC5351 2SC5351

    transistor marking c3n

    Abstract: Transistor Marking C3 marking UM 5pin c3n transistor marking C3 5-pin D marking PNP pnp npn dual emitter connected
    Text: C3N Transistor, digital, dual, PNP and NPN, with 2 resistors Features Dimensions Units : mm • available in UMT5 (UM5) package • package marking: C3 • package contains an NPN (DTC114EKA) and a PNP (DTA114EKA) digital transistor, each with two resistors. Base of DTr2 is


    OCR Scan     		PDF DTC114EKA) DTA114EKA) SC-70) transistor marking c3n Transistor Marking C3 marking UM 5pin c3n transistor marking C3 5-pin D marking PNP pnp npn dual emitter connected

    c3n transistor

    Abstract: No abstract text available
    Text: TO SH IB A 2SC5279 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5279 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • • Excellent Switching Times : tr = 1.0,«s Max. tf = 1.0,«s (Max.) (Iq = 0.8A)


    OCR Scan     		PDF 2SC5279 61001EAA1 c3n transistor

    transistor marking c3n

    Abstract: No abstract text available
    Text: TOSHIBA HN3C10F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 r 1 HF • ■ 'm ■ mmr ■ U nit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C10F transistor marking c3n

    transistor marking c3n

    Abstract: No abstract text available
    Text: TO SH IB A HN2C10FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H M 9 f 1 fi F 11 • ■ ■ w u 'm ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN2C10FU transistor marking c3n

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2C12FU T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN7ri7Fll • ■ u 'm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) SYMBOL


    OCR Scan     		PDF HN2C12FU

    transistor marking c3n

    Abstract: No abstract text available
    Text: TOSHIBA HN3C09F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C09F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Em itter Voltage


    OCR Scan     		PDF HN3C09F N3C09F transistor marking c3n

    2C11FU

    Abstract: No abstract text available
    Text: TOSHIBA H N 2C 11 FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN7ri1Fll • ■ u 'm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2531 TOSHIBA TRANSISTOR i SILICON NPN TRIPLE DIFFUSED TYPE < ; n i mm mmr s 3 1 w POWER AMPLIFIER APPLICATIONS U nit in mm 10 + 0.3 , ^ 3 .2 ± 0 .2 2J± 0 2 Low Collector Saturation Voltage : V C E s a t = 0.5V (Typ.) Oc = 2.5A, IB = 0.25A) High Power Dissipation


    OCR Scan     		PDF 2SD2531

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5317 T O SH IBA TRANSISTOR i SILICON NPN EPITAXIAL PLANAR TYPE <;r s 3 1 7 MT V • m V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS U n it in mm 3 f l . M T U 1 ET 2 M IC R O W A V E CHARACTERISTICS Ta = 25°C CHARACTERISTIC Transition Frequency


    OCR Scan     		PDF 2SC5317 --15mA,

    2SD1947A

    Abstract: No abstract text available
    Text: 2SD1947A TO SH IB A 2SD1947A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS LAMP, SOLENOID DRIVE APPLICATIONS t • High DC Current Gain : hFE = 500-1500 Ic = lA Low Collector Saturation Voltage


    OCR Scan     		PDF 2SD1947A 2SD1947A

    transistor HD marking

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN3C14F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 • ■ 'm ■ m tr r1AF ■ ■ ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C14F transistor HD marking

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C13F TOSHIBA TRANSISTOR TENTATIVE HN3 • ■ ■ r13F SILICON NPN EPITAXIAL PLANAR TYPE 'm m tr ■ w ■ V H F- U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C13F

    transistor marking c3n

    Abstract: No abstract text available
    Text: TOSHIBA HN3C14FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 r 1 A F 11 • ■ u 'm mm V H F- U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 U ltra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C14FU transistor marking c3n

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C11FU T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3ri1Fll • ■ u 'm mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C11FU

    transistor marking c3n

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5262 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5262 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure : N F = 1.7dB f=2G H z H igh Gain : Gain = lld B (f= 2 G H z ) MAXIMUM RATINGS (Ta = 25°C) SYM BOL CHARACTERISTIC


    OCR Scan     		PDF 2SC5262 transistor marking c3n

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C11F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3r 11F • ■ 'm ■ m tr ■ ■ ■ V H F - U H F B A N D LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X I M U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C11F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5263 T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5263 V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS Low Noise Figure : NF = 1.7dB f=2GHz High Gain : Gain = lld B (f= 2 G H z ) M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


    OCR Scan     		PDF 2SC5263

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE AÍ17A PO W ER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS High. Breakdown Voltage : V£ e o = 100V Low Collector Saturation Voltage : V q e gat = 2.0V (Max.) Complementary to 2SB1016A


    OCR Scan     		PDF 2SD1407A 2SB1016A 10hts