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    C3474 Search Results

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    C3474 Price and Stock

    TDK Epcos B32521C3474K189

    CAP FILM 0.47UF 10% 250VDC RAD
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    DigiKey B32521C3474K189 Reel 22,000 1,100
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    Bristol Electronics B32521C3474K189 4,400
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    TME B32521C3474K189 1
    • 1 $0.652
    • 10 $0.652
    • 100 $0.453
    • 1000 $0.336
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    ComSIT USA B32521C3474K189 8,800
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    TDK Epcos B32522C3474J289

    CAP FILM 0.47UF 5% 250VDC RADIAL
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    DigiKey B32522C3474J289 Ammo Pack 15,360 960
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    B32522C3474J289 Cut Tape 2,713 1
    • 1 $0.91
    • 10 $0.656
    • 100 $0.4677
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    TME B32522C3474J289 1
    • 1 $0.43
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    • 100 $0.43
    • 1000 $0.285
    • 10000 $0.257
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    TDK Epcos B32922C3474M189

    CAP FILM 0.47UF 20% 630VDC RAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B32922C3474M189 Reel 14,000 700
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    • 1000 $0.3253
    • 10000 $0.251
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    B32922C3474M189 Cut Tape 1,344 1
    • 1 $0.87
    • 10 $0.626
    • 100 $0.4462
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    Bristol Electronics B32922C3474M189 8,648
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    TME B32922C3474M189 1,934 1
    • 1 $0.773
    • 10 $0.529
    • 100 $0.396
    • 1000 $0.29
    • 10000 $0.29
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    ComSIT USA B32922C3474M189 22,400
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    TDK Epcos B32922C3474M289

    CAP FILM 0.47UF 20% 630VDC RAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B32922C3474M289 Ammo Pack 12,800 640
    • 1 -
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    • 1000 $0.3253
    • 10000 $0.251
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    B32922C3474M289 Cut Tape 373 1
    • 1 $0.87
    • 10 $0.626
    • 100 $0.4462
    • 1000 $0.4462
    • 10000 $0.4462
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    TDK Epcos B32923C3474M289

    CAP FILM 0.47UF 20% 630VDC RAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B32923C3474M289 Ammo Pack 10,528 480
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    • 1000 $0.26994
    • 10000 $0.24188
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    B32923C3474M289 Cut Tape 471 1
    • 1 $0.84
    • 10 $0.603
    • 100 $0.43
    • 1000 $0.43
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    C3474 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C3474

    Abstract: 2SC3474
    Text: C3474 TOSHIBA Transistor Silicon NPN Epitaxial Type C3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		PDF 2SC3474 C3474 2SC3474

    r9824

    Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
    Text: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16


    Original     		PDF 1/10W XW9902 XC9901 50R28 U9500 XW9903 25MIL 10MIL R9915 r9824 R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523

    IRF5505

    Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
    Text: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT


    Original     		PDF TEST10 TEST11 CS8406 RA300 RA302 1/16W IRF5505 C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi

    C3474

    Abstract: 2SC3474
    Text: C3474 TOSHIBA Transistor Silicon NPN Epitaxial Type C3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		PDF 2SC3474 C3474 2SC3474

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    Untitled

    Abstract: No abstract text available
    Text: C3474 TOSHIBA Transistor Silicon NPN Epitaxial Type C3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		PDF 2SC3474

    C3474

    Abstract: 2SC3474
    Text: C3474 TOSHIBA Transistor Silicon NPN Epitaxial Type C3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		PDF 2SC3474 C3474 2SC3474

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    C3474

    Abstract: 2SC3474
    Text: C3474 東芝トランジスタ シリコンNPNエピタキシャル形 C3474 ○ スイッチング用 ○ ソレノイドドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 500 最小 (IC = 400 mA) • コレクタ•エミッタ間飽和電圧が低い。


    Original     		PDF 2SC3474 20070701-JA C3474 2SC3474

    Untitled

    Abstract: No abstract text available
    Text: C3474 TOSHIBA Transistor Silicon NPN Epitaxial Type C3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		PDF 2SC3474

    C3474

    Abstract: 2SC3474
    Text: C3474 東芝トランジスタ シリコンNPNエピタキシャル形 C3474 ○ スイッチング用 ○ ソレノイドドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 500 最小 (IC = 400 mA) • コレクタ•エミッタ間飽和電圧が低い。


    Original     		PDF 2SC3474 C3474 2SC3474

    SMC1602

    Abstract: SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900
    Text: 8 6 7 C B A PAGE PDF 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 2 3


    Original     		PDF CS8406 RA300 RA302 1/16W SMC1602 SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900

    Untitled

    Abstract: No abstract text available
    Text: C3474 TOSHIBA Transistor Silicon NPN Epitaxial Type C3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		PDF 2SC3474

    C3474

    Abstract: 2SC3474
    Text: C3474 TOSHIBA Transistor Silicon NPN Epitaxial Type C3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		PDF 2SC3474 C3474 2SC3474

    c3207

    Abstract: C3331 c3206 C3374 C3478 C3507 c3355 C3502 Toshiba C3388 c3320
    Text: CR-1 8 7 6 5 3 4 2 1 REVISIONS ZONE DESCRIPTION LTR DATE APPR. SONY PROPRIETARY INFORMATION F F SONY CONFIDENTIAL IRX-3130 E SCHEMATICS E TV TUNER BOARD ENX-31 TABLE OF CONTENTS BLOCK TITLE D PAGE REF.NO. DESCRIPTIONS 1 XXXX - XXXX INDEX THIS PAGE HISTORY


    Original     		PDF IRX-3130 ENX-31 RB3557 RB3600 RB3601 RB3602 RB3603 RB3610 RB3611 RB3612 c3207 C3331 c3206 C3374 C3478 C3507 c3355 C3502 Toshiba C3388 c3320

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    C3331

    Abstract: c3207 c3206 C3478 C3381 TP3407 c3355 r3301 C3128 c3309
    Text: CR-1 8 7 6 5 3 4 2 1 REVISIONS ZONE DESCRIPTION LTR DATE APPR. SONY PROPRIETARY INFORMATION F F SONY CONFIDENTIAL IRX-2890 E SCHEMATICS E TV TUNER BOARD ENX-31 TABLE OF CONTENTS BLOCK TITLE D PAGE REF.NO. DESCRIPTIONS 1 XXXX - XXXX INDEX THIS PAGE HISTORY


    Original     		PDF IRX-2890 ENX-31 SL3300 SL3301 SL3350 SL3430 SL3450 SL3451 SL3570 SL3600 C3331 c3207 c3206 C3478 C3381 TP3407 c3355 r3301 C3128 c3309

    R9810

    Abstract: HT 1200-4 smd r9824 HT 1200-4 c6011 L9707 L5800 c9611 C3150 ic c2335
    Text: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 B 1 2 3 4 6 7 8 9 10 11 13* 14 16 17 18 21* 22


    Original     		PDF 1/10W XW9902 XC9901 50R28 U9500 XW9903 25MIL 10MIL R9915 R9810 HT 1200-4 smd r9824 HT 1200-4 c6011 L9707 L5800 c9611 C3150 ic c2335

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322

    capacitor 1.50 MKT 400V

    Abstract: IEC 68-2-6 Vibration c1474 C3105 1.50 MKT av series C3684 mkt 1.50 400V capacitor 0 033 j mkt 250v capacitor 100 nf 100v mkt Siemens film capacitor
    Text: fl235bOS GG37b47 7 • S IE G MKT Capacitors SIEMENS A K T I E N 6 E S E L L S C H A F M7E D -/ f 'C E3 B 32520 .B 32529 fS l 7 ' O S. M e ta liz a d p o ly e s te r film c a p a c ito rs in a c c o rd a n c e w it h DIN 4 4 1 1 2 VR = 63 to 6 3 0 Vdc


    OCR Scan     		PDF fl235bOS D037b47 capacitor 1.50 MKT 400V IEC 68-2-6 Vibration c1474 C3105 1.50 MKT av series C3684 mkt 1.50 400V capacitor 0 033 j mkt 250v capacitor 100 nf 100v mkt Siemens film capacitor

    C6104

    Abstract: C3684 c1474 C3104
    Text: fl235bOS D037b47 7 M K T Capacitors S IE G □ SIEMENS A KT IE N G E S E L L S C H A F M7E D B 32520 .B 3 2 5 2 9 ft~ O S l 7 - o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.


    OCR Scan     		PDF fl235bOS D037b47 C6104 C3684 c1474 C3104