C3474
Abstract: 2SC3474
Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)
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2SC3474
C3474
2SC3474
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C3474
Abstract: 2SC3474
Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)
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2SC3474
C3474
2SC3474
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b0239c
Abstract: diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode
Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N5000 2N5150 2N5602 2N5154 2N6717 92GU06 92PU06 B0379-16 ~~~~~ 30 SOT5513 SOT5513 SOT5913 B0379-25 2SC3474 2S01914 2S01981 SK3512 - :g~~:~ - 25 35 -40 45 -50 RCA1A03 S2N4863-2 S2N4863-3 SMl5509 SMl5514
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OT5503
OT5903
2N6409
2S01516
b0239c
diode GG 66
diode 2U 66
MEAB
to-53
2U 39 diode
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Untitled
Abstract: No abstract text available
Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)
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2SC3474
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Untitled
Abstract: No abstract text available
Text: 2SC3474 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC3474
Freq85M
req85M
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C3474
Abstract: 2SC3474
Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)
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2SC3474
C3474
2SC3474
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C3474
Abstract: 2SC3474
Text: 2SC3474 東芝トランジスタ シリコンNPNエピタキシャル形 2SC3474 ○ スイッチング用 ○ ソレノイドドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 500 最小 (IC = 400 mA) • コレクタ•エミッタ間飽和電圧が低い。
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2SC3474
20070701-JA
C3474
2SC3474
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Untitled
Abstract: No abstract text available
Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)
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2SC3474
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C3474
Abstract: 2SC3474
Text: 2SC3474 東芝トランジスタ シリコンNPNエピタキシャル形 2SC3474 ○ スイッチング用 ○ ソレノイドドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 500 最小 (IC = 400 mA) • コレクタ•エミッタ間飽和電圧が低い。
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2SC3474
C3474
2SC3474
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Untitled
Abstract: No abstract text available
Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)
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2SC3474
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C3474
Abstract: 2SC3474
Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)
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2SC3474
C3474
2SC3474
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C3474
Abstract: 2SC3474
Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)
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2SC3474
C3474
2SC3474
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2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
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2N5655
2N5656
2N5657
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2N5657 equivalent
2SA1046
BU326
BU108
BU100
2SC2331 Y
tip47 419
2N3792 application notes
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MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
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BD157
BD158
BD159
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
MJE494
2SC1419
BD 804
2SD675
MJE104
BD581
BD135 CURVES
MJ1000
DTS-4041
2N5037
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2SC495
Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
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MJF6107
2N6107
E69369,
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2SC495
NSP41A
BU108
transistor BD614 MOTOROLA
2SA663
BD4122
BD661
MJ1000
NSP2100
D45VH4 similar
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2sc3474
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC3474 INDUSTRIAL APPLICATIONS Unit in mm SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. &8MAX. FEATURES : . High DC Current: Gain : hFE=500 Min. (Ic=400mA) . Low Saturation Voltage: VcE(sat)=0 •5V(Max.) (Ic=300mA) 06±015
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2SC3474
400mA)
300mA)
100mA
2sc3474
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SC3474 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3474 SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SOLENOID DRIVE APPLICATIONS • • U n it in mm High DC Current Gain : hpE = 500 Min. (Iç = 400 mA) Low Saturation Voltage : VcE (sat) = 0.5 V (Max.) (Iç = 300 mA)
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2SC3474
961001EAA
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2SC3474
Abstract: No abstract text available
Text: 2SC3474 SILICON NPN EPITAXIAL TYPE INDUSTRIAL APPLICATIONS Unit in a SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. S8MAX. FEATURES : . High DC Current Gain : hFE=500 Min. (Ic=400mA) . Low Saturation Voltage: VcE(sat)=0-5V(Max.)(Ic=300mA) Û 9 5M A X .
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2SC3474
400mA)
300mA)
2SC3474
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2SC3474
Abstract: 2U211
Text: TOSHIBA 2SC3474 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC3474 INDUSTRIAL APPLICATIONS SOLENOID DRIVE APPLICATIONS • • High DC Current Gain : hpE = 500 Min. (Iç; = 400 mA) Low Saturation Voltage : (sat) = 0.5 V (Max.) (Iç; = 300 mA)
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2SC3474
2SC3474
2U211
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2SC347
Abstract: 2SC3474
Text: TO SH IBA 2SC3474 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC3474 INDUSTRIAL APPLICATIONS SOLENOID DRIVE APPLICATIONS • • High DC Current Gain : hpE = 500 Min. (Iç; = 400 mA) Low Saturation Voltage : (sat) = 0.5 V (Max.) (Iç; = 300 mA)
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2SC3474
2SC347
2SC3474
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2SC3474
Abstract: No abstract text available
Text: TOSHIBA 2SC3474 ? <;r 3 a.7 a. TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • High DC Current Gain : hpE = 500 Min. (Iq = 400 mA) • Low Saturation Voltage : V çje (sat) = 0.5 V (Max.) (10 = 300 mA)
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2SC3474
2SC3474
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2SC3474
Abstract: No abstract text available
Text: TO SH IBA 2SC3474 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC3474 SOLENOID DRIVE APPLICATIONS • • High DC Current Gain : hpE = 500 Min. (Iç; = 400 mA) Low Saturation Voltage : (sat) = 0.5 V (Max.) (Iç; = 300 mA) MAXIMUM RATINGS (Tc = 25°C)
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2SC3474
2SC3474
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SSG 23 TRANSISTOR
Abstract: No abstract text available
Text: TOSHIBA 2SC3474 TOSHIBA TRANSISTOR V SILICON IMPN EPITAXIAL TYPE W • M A■ SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm SOLENOID DRIVE APPLICATIONS. 6.8MAX A 0.6 MAX 5.2 ± 0 .2 _ i • H igh DC C u rre n t G ain : h p ^ —500 (Min.) (I(} = 400mA)
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2SC3474
400mA)
95MAX
--300mA)
SSG 23 TRANSISTOR
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2sd1878
Abstract: 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431
Text: - 264 - m « tt € Type No. Manuf. SANYO ÍL ÍL ±L ÍL 2SD1403 « 2SD1841 2SD 2298 2SD 2299 2SD 2300 2SD 2301 2SD 2302 « ± 2SD 2303 « d t« m±wM 2SD 2304 n = 36 2 TOSHIBA 2SC3887A m NEC B ÍI HITACHI ± Ü FU JITSU fâ T MATSUSHITA 2SD1274D ZSU56Ö
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2SD2298
2SD2299
2SD2300
2SD2301
2SD2302
2SD2303
2SD2304
2SD2305
2SD2306
2SD2307
2sd1878
2sd2339
2SD1876
2SD2333
2SC3887A
2SD1545
2SD2009
2SC3887
T M 2313
2SD1431
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