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    KEMET Corporation C1825C564J5RACTU

    Multilayer Ceramic Capacitor, 0.56 uF, 50 V, ± 5%, X7R, 1825 [4564 Metric] - Tape and Reel (Alt: C1825C564J5RACTU)
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    Avnet Americas C1825C564J5RACTU Reel 8 Weeks 1,000
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    • 1000 $1.84188
    • 10000 $1.57875
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    Mouser Electronics C1825C564J5RACTU
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    • 1000 $1.36
    • 10000 $1.36
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    Newark C1825C564J5RACTU Reel 1,000
    • 1 $1.74
    • 10 $1.74
    • 100 $1.74
    • 1000 $1.74
    • 10000 $1.44
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    C1825C564J5RACTU Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    C1825C564J5RACTU KEMET Ceramic Capacitors, Capacitors, CAP CER 0.56UF 50V 5% X7R 1825 Original PDF

    C1825C564J5RACTU Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original     		PDF MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3

    J307

    Abstract: J249 AD255A AN1955 MRF8S9100HR3 MRF8S9100HSR3 J032 ATC100B200JT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original     		PDF MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3 J307 J249 AD255A AN1955 MRF8S9100HSR3 J032 ATC100B200JT500XT

    J280

    Abstract: MRF8S19140H C1825C564J5RACTU J296 J589 MRF8S19140HS mrf8s19140 ATC800B AN1955 MCRH63V337M13X21-RH
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S19140H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S19140HR3 MRF8S19140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with


    Original     		PDF MRF8S19140H MRF8S19140HR3 MRF8S19140HSR3 MRF8S19140HR3 J280 MRF8S19140H C1825C564J5RACTU J296 J589 MRF8S19140HS mrf8s19140 ATC800B AN1955 MCRH63V337M13X21-RH

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S19140H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S19140HR3 MRF8S19140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with


    Original     		PDF MRF8S19140H MRF8S19140HR3 MRF8S19140HSR3 MRF8S19140HR3