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    C1825C103J1GAC Price and Stock

    KEMET Corporation C1825C103J1GAC7800

    CAP CER 10000PF 100V C0GNP0 1825
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    DigiKey C1825C103J1GAC7800 Reel 1,000
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    Bristol Electronics C1825C103J1GAC7800 1,100
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    Avnet Abacus C1825C103J1GAC7800 Reel 11 Weeks 1,000
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    Component Electronics, Inc C1825C103J1GAC7800 973
    • 1 $1.25
    • 10 $1.25
    • 100 $0.94
    • 1000 $0.81
    • 10000 $0.81
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    KEMET Corporation C1825C103J1GACTU

    Multilayer Ceramic Capacitor, 0.01 uF, 100 V, ± 5%, C0G (NP0), 1825 [4564 Metric] - Tape and Reel (Alt: C1825C103J1GACTU)
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    Avnet Americas C1825C103J1GACTU Reel 8 Weeks 1,000
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    • 10000 $1.023
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    Mouser Electronics C1825C103J1GACTU
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    Newark C1825C103J1GACTU Reel 1,000
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    Bristol Electronics C1825C103J1GACTU 1,837
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    C1825C103J1GACTU 825 2
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    • 100 $1.2545
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    Quest Components C1825C103J1GACTU 800
    • 1 $2.24
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    • 1000 $0.924
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    C1825C103J1GACTU 660
    • 1 $3.6
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    • 1000 $1.56
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    KEMET Corporation C1825C103J1GAC

    Capacitor, Ceramic, 10nf, 100V, 5±%, C0G Temp Coef.
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    Quest Components C1825C103J1GAC 1,450
    • 1 $1.5
    • 10 $1.5
    • 100 $1.5
    • 1000 $0.69
    • 10000 $0.63
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    Others C1825C103J1GAC

    Capacitor, Ceramic, 10nf, 100V, 5±%, C0G Temp Coef.
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    Quest Components C1825C103J1GAC 401
    • 1 $2.4
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    • 100 $2.4
    • 1000 $1.11
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    C1825C103J1GAC Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    C1825C103J1GAC KEMET Ceramic Chip Capacitors / Standard C0G; Capacitance [nom]: 0.01uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252" Container: Bulk; Features: Unmarked Original PDF
    C1825C103J1GAC7800 KEMET Ceramic Chip Capacitors / Standard C0G; Capacitance [nom]: 0.01uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 1825; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.177" x 0.252" Container: Tape & Reel, 7" Reel, Plastic Tape; Features: Unmarked Original PDF
    C1825C103J1GACTU KEMET Ceramic Capacitors, Capacitors, CAP CER 10000PF 100V 5% NP0 1825 Original PDF

    C1825C103J1GAC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking WB4

    Abstract: NIPPON CHEMI nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3 MRF377HR5 MRF377H marking WB4 NIPPON CHEMI nippon capacitors

    845 motherboard circuit

    Abstract: MRF377 0603HC-10NXJB Coilcraft Rogers 3006 MRF377R3 NIPPON CAPACITORS DVB-T acpr dvbt transmitter 3A412 MRF377R5
    Text: MOTOROLA Order this document by MRF377/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF377 MRF377R3 MRF377R5 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377/D MRF377 MRF377R3 MRF377R5 MRF377 MRF377R3 845 motherboard circuit 0603HC-10NXJB Coilcraft Rogers 3006 NIPPON CAPACITORS DVB-T acpr dvbt transmitter 3A412 MRF377R5

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1 MRF6S21100NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100NR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1

    T491D106K010AT

    Abstract: MRF377H PCN13170 nippon capacitors dvbt dvbt transmitter MRF377 T491D106K050at 3A412 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 2, 3/2009 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377HR3 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3 T491D106K010AT MRF377H PCN13170 nippon capacitors dvbt dvbt transmitter MRF377 T491D106K050at 3A412 Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF377H Rev. 2, 3/2009 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3

    2DS1047

    Abstract: nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377 MRF377R3 MRF377R5 MRF377 2DS1047 nippon capacitors Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377 MRF377R3 MRF377R5 MRF377 MRF377R3

    MRF377HR3

    Abstract: NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi
    Text: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377HR3 MRF377HR5 NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi

    ATC100B100BT500XT

    Abstract: No abstract text available
    Text: Document Number: MRF6S21100N Rev. 3, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100N ATC100B100BT500XT

    J1112

    Abstract: transistor J1112 MRF7S19120N A113 A114 A115 AN1955 C101 JESD22 MRF7S19120NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 1, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF7S19120N MRF7S19120NR1 J1112 transistor J1112 MRF7S19120N A113 A114 A115 AN1955 C101 JESD22 MRF7S19120NR1

    MRF377

    Abstract: 845 motherboard circuit 0805J resistor kyocera 845 motherboard dvbt nippon capacitors 2508051107Y0 datasheet dvbt transmitter Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF377 Rev. 1, 12/2004 RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377 MRF377R3 MRF377R5 MRF377 MRF377R3 845 motherboard circuit 0805J resistor kyocera 845 motherboard dvbt nippon capacitors 2508051107Y0 datasheet dvbt transmitter Nippon chemi

    ATC100B120JT500XT

    Abstract: atc100b270 MRF9210R3 06035J nippon capacitors 2508051107Y0 3A412 rf push pull mosfet power amplifier MRF9210 ATC100B1
    Text: Freescale Semiconductor Technical Data Document Number: MRF9210 Rev. 6, 9/2008 RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common source amplifier


    Original     		PDF MRF9210 MRF9210R3 ATC100B120JT500XT atc100b270 MRF9210R3 06035J nippon capacitors 2508051107Y0 3A412 rf push pull mosfet power amplifier MRF9210 ATC100B1

    atc100b270

    Abstract: No abstract text available
    Text: Document Number: MRF9210 Rev. 6, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with fre- quencies from 865 to 895 MHz. The high gain and broadband performance of


    Original     		PDF MRF9210 IS-95 MRF9210R3 atc100b270

    transistor amplifier 1ghz 1400 watts

    Abstract: nippon capacitors 0603HC-10NXJB Nippon chemi
    Text: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377 MRF377R3 MRF377R5 transistor amplifier 1ghz 1400 watts nippon capacitors 0603HC-10NXJB Nippon chemi

    nippon capacitors

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9210 Rev. 3, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9210 MRF9210R3 MRF9210 nippon capacitors

    nippon capacitors

    Abstract: dvbt transmitter j564 Nippon chemi
    Text: Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3 MRF377HR5 nippon capacitors dvbt transmitter j564 Nippon chemi

    ATC100B100BT500XT

    Abstract: 250GX-0300-55-22 AN1955 JESD22-A113 JESD22-A114 MRF6S21100N MRF6S21100NBR1 MRF6S21100NR1 J361 J527
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 3, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W-CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100NR1 ATC100B100BT500XT 250GX-0300-55-22 AN1955 JESD22-A113 JESD22-A114 MRF6S21100N MRF6S21100NBR1 J361 J527

    100B270JP500X

    Abstract: NIPPON CAPACITORS MRF9210 DS0978 TRANSISTOR J408 865 marking amplifier
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9210R3 100B270JP500X NIPPON CAPACITORS MRF9210 DS0978 TRANSISTOR J408 865 marking amplifier

    murata process

    Abstract: CRCW12061001FKEA
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 3, 3/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF7S19120N MRF7S19120NR1 MRF7S19120N murata process CRCW12061001FKEA

    845 motherboard circuit

    Abstract: DS1046 NIPPON CAPACITORS 470-860 mhz Power amplifier w 470-860 mhz Power amplifier 5 w Nippon chemi 845 motherboard
    Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF377 MRF377R3 MRF377R5 845 motherboard circuit DS1046 NIPPON CAPACITORS 470-860 mhz Power amplifier w 470-860 mhz Power amplifier 5 w Nippon chemi 845 motherboard

    MRF377H

    Abstract: dvbt transmitter MRF377HR3 resistor kyocera 845 motherboard circuit nippon capacitors MRF377 2508051107Y0 64 QAM Transmitter Nippon chemi
    Text: Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF377H MRF377HR3 MRF377HR5 MRF377HR3 MRF377H dvbt transmitter resistor kyocera 845 motherboard circuit nippon capacitors MRF377 2508051107Y0 64 QAM Transmitter Nippon chemi

    j378

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1 MRF6S21100NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100NR1 j378 A113 A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF7S19120N MRF7S19120NR1 -38fficers,

    nippon capacitors

    Abstract: 2508051107Y0 3A412 MRF9210R3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9210/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9210R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with


    Original     		PDF MRF9210/D MRF9210R3 nippon capacitors 2508051107Y0 3A412 MRF9210R3