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    C1812C224K5RAC Price and Stock

    KEMET Corporation C1812C224K5RACTU

    CAP CER 0.22UF 50V X7R 1812
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    DigiKey C1812C224K5RACTU Digi-Reel 3,320 1
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    Avnet Americas C1812C224K5RACTU Reel 5,000 9 Weeks 1,000
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    Mouser Electronics C1812C224K5RACTU 7,745
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    Quest Components C1812C224K5RACTU 2,790
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    C1812C224K5RACTU 1,545
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    C1812C224K5RACTU 1,484
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    Component Electronics, Inc C1812C224K5RACTU 800
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    KEMET Corporation C1812C224K5RACAUTO

    CAP CER 0.22UF 50V X7R 1812
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    DigiKey C1812C224K5RACAUTO Cut Tape 940 1
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    Mouser Electronics C1812C224K5RACAUTO 6,864
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    KEMET Corporation C1812C224K5RAC7025

    CAP CER 0.22UF 50V X7R 1812
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    DigiKey C1812C224K5RAC7025 Reel 1,000
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    KEMET Corporation C1812C224K5RAC3070

    CAP CER 0.22UF 50V X7R 1812
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    DigiKey C1812C224K5RAC3070 Reel 1,000
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    KEMET Corporation C1812C224K5RAC7210

    CAP CER 0.22UF 50V X7R 1812
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    DigiKey C1812C224K5RAC7210 Reel 4,000
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    Find more C1812C224K5RAC price and stock on Findchips.com

    C1812C224K5RAC Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C1812C224K5RAC KEMET Ceramic Chip Capacitors / Standard X7R; Capacitance [nom]: 0.22uF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R; Lead Style: Surface Mount Chip; Lead Dimensions: 1812; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.177" x 0.126" Container: Bulk; Features: Unmarked Original PDF
    C1812C224K5RAC3972 KEMET CAP 0.22UF 50V 10% X7R SMD-1812 SN-NIBAR SPECIAL PKG Original PDF
    C1812C224K5RAC7025 KEMET Ceramic Chip Capacitors / Standard X7R; Capacitance [nom]: 0.22uF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R; Lead Style: Surface Mount Chip; Lead Dimensions: 1812; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.177" x 0.126" Container: Tape & Reel, 7" Reel, Plastic Tape; Features: Marked Original PDF
    C1812C224K5RAC7800 KEMET Ceramic Chip Capacitors / Standard X7R; Capacitance [nom]: 0.22uF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R; Lead Style: Surface Mount Chip; Lead Dimensions: 1812; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.177" x 0.126" Container: Tape & Reel, 7" Reel, Plastic Tape; Features: Unmarked Original PDF
    C1812C224K5RACTM KEMET CAP 0.22UF 50V 10% X7R SMD-1812 TR-7-PL SN-NIBAR MARKED Original PDF
    C1812C224K5RACTU KEMET Ceramic Capacitors, Capacitors, CAP CER 0.22UF 50V 10% X7R 1812 Original PDF
    C1812C224K5RACTU KEMET CAP 0.22UF 50V 10% X7R SMD-1812 TR-7-PL SN-NIBAR Original PDF

    C1812C224K5RAC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: C1812C224K5RACTU C1812C224K5RAC7800 Capacitor, ceramic, 0.22 uF, +/-10% Tol, 50V, X7R, 1812 General Information Manufacturer: Miscellaneous Electrical: KEMET Note: Referee time for X7R dielectric for this part number is 1000 hours Electrical Specifications


    Original     		C1812C224K5RACTU C1812C224K5RAC7800) ce462cea-5d2d-4652-93a5-207208abf355 PDF

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: C1812C224K5RACTU C1812C224K5RAC7800 Capacitor, ceramic, 0.22 uF, +/-10% Tol, 50V, X7R, 1812 General Information Manufacturer: Miscellaneous Electrical: KEMET Note: Referee time for X7R dielectric for this part number is 1000 hours Electrical Specifications


    Original     		C1812C224K5RACTU C1812C224K5RAC7800) PDF

    Untitled

    Abstract: No abstract text available
    Text: C1812C224K5RAC Capacitor, ceramic, 0.22 uF, +/-10% Tol, 50V, X7R, 1812 Dimensions mm Specifications ID Dimension Tolerance L W T B 4.50 3.20 1 0.60 +/-0.30 +/-0.30 +/-0.1 +/-0.35 Manufacturer: Capacitance: Chip Size: Voltage: Temperature Coefficient: Tolerance:


    Original     		C1812C224K5RAC PDF

    DMX RECEIVER

    Abstract: TEMPERATURE CONTROLLER with pid AVR pid 420 f9001 93F2330 PID code for avr circuit diagram of pid controller DMX chip PC keyboard CIRCUIT diagram AT43USB324 PANASONIC ECEV1AA101SP
    Text: Features • • • • • • • • • • • • • • • AVR 8-bit RISC Microcontroller with 83 ns Instruction Cycle Time USB Hub with One Attached and Two External Ports USB Keyboard Function with Three Endpoints 16K Bytes of Program Memory, 512 Bytes SRAM


    Original     		48-lead AT43USB324 02/01/xM DMX RECEIVER TEMPERATURE CONTROLLER with pid AVR pid 420 f9001 93F2330 PID code for avr circuit diagram of pid controller DMX chip PC keyboard CIRCUIT diagram PANASONIC ECEV1AA101SP PDF

    mrfe6vp5600hs

    Abstract: MRFE6VP5600H
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 mrfe6vp5600hs MRFE6VP5600H PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


    Original     		MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1 PDF

    ATC200B103KT50X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X PDF

    G2225X7R225KT3AB

    Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6 PDF

    USB KEYBOARD CONTROLLER

    Abstract: 93F2330 PID code for avr TEMPERATURE CONTROLLER with pid AVR 151R8
    Text: Features • • • • • • • • • • • • • • • AVR 8-bit RISC Microcontroller with 83 ns Instruction Cycle Time USB Hub with One Attached and Two External Ports USB Keyboard Function with Three Programmable Endpoints 16 KB Program Memory, 512 Bytes Data SRAM


    Original     		48-lead USB KEYBOARD CONTROLLER 93F2330 PID code for avr TEMPERATURE CONTROLLER with pid AVR 151R8 PDF

    tantulum capacitor

    Abstract: 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 0, 9/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


    Original     		MRF6P3300H MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 tantulum capacitor 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955 PDF

    NIPPON CAPACITORS

    Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		MRF6VP2600H MRF6VP2600HR6 NIPPON CAPACITORS MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi PDF

    81c1000

    Abstract: ATC100B241JT200XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 3, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,


    Original     		MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 81c1000 ATC100B241JT200XT PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


    Original     		MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5 PDF

    93F2330

    Abstract: AT43USB326
    Text: Features • • • • • • • • • • • • • • • AVR 8-bit RISC Microcontroller with 83 ns Instruction Cycle Time USB Hub with One Attached and Two External Ports USB Keyboard Function with Three Programmable Endpoints 16 KB Program Memory, 512 Bytes Data SRAM


    Original     		48-lead 3313C 93F2330 AT43USB326 PDF

    2225x7r225kt3ab

    Abstract: MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHR6 MRF6VP41KHSR6 ATC100B9R1CT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP41KH Rev. 0, 1/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,


    Original     		MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 2225x7r225kt3ab MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHSR6 ATC100B9R1CT500XT PDF

    UT-90-25

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1305H Rev. 0, 12/2013 RF Power LDMOS Transistors MMRF1305HR5 MMRF1305HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or


    Original     		MMRF1305H MMRF1305HR5 MMRF1305HSR5 MMRF1305HR5 UT-90-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1006H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1006HR5 MMRF1006HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to


    Original     		MMRF1006H MMRF1006HR5 MMRF1006HSR5 MMRF1006HR5 PDF

    RF1000LF

    Abstract: RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in


    Original     		MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1 RF1000LF RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with fre-


    Original     		MRF6P3300H MRF6P3300HR3/HR5 MRFE6P3300HR3/HR5. PCN12895 MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 AFT05MP075NR1 PDF

    RR1220P-102-D

    Abstract: D58764 HSF-141C-35
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 1, 7/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR


    Original     		MRFE6VP5150N MRFE6VP5150NR1 MRFE6VP5150GNR1 MRFE6VP5150NR1 RR1220P-102-D D58764 HSF-141C-35 PDF

    TUI-lf-9

    Abstract: ATC700B392JT50X
    Text: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched


    Original     		MMRF1016H MMRF1016HR5 7/2014Semiconductor, TUI-lf-9 ATC700B392JT50X PDF

    G2225X7R225KT3AB

    Abstract: m27500 transfer impedance
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


    Original     		MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5 G2225X7R225KT3AB m27500 transfer impedance PDF