Untitled
Abstract: No abstract text available
Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power ampliier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,
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PTFA220041M
PTFA220041M
PG-SON-10
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capacitor marking c106
Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200
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PTFA220081M
PTFA220081M
capacitor marking c106
NFM18Ps105
TL217
NFM18PS105R0J3
TL222
Transistor tl217
TRANSISTOR SMD w2
c105 TRANSISTOR
c103 TRANSISTOR DATA
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SMD r801
Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223
Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,
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PTFA220041M
PTFA220041M
SMD r801
TL217
TL218
TL2082
TRANSISTOR c801
c803
R804
3224W-202ECT-ND
transistor c803
TL223
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TL113
Abstract: tl201 TL217 w3 smd transistor transistor c111
Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200
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PTFA220081M
PTFA220081M
PG-SON-10
TL113
tl201
TL217
w3 smd transistor
transistor c111
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c102 TRANSISTOR
Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS
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PTFA220121M
PTFA220121M
12-watt
PG-SON-10
c102 TRANSISTOR
NFM18PS105R0J3
tl111
TRANSISTOR C802
TL204
TL231
c801
TL-205A
tl113
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TL225
Abstract: ATC100A6R2CW150X
Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS
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PTFA220121M
PTFA220121M
12-watt
PG-SON-10
TL225
ATC100A6R2CW150X
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TRANSISTOR C802
Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS
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PTFA220121M
PTFA220121M
12-watt
PG-SON-10
TRANSISTOR C802
TL2262
c102 TRANSISTOR
C102 M transistor
atc100a
c103 m TRANSISTOR
c103 TRANSISTOR
ATC100A100JW150X
smd transistor bd 37
TRANSISTOR c104
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c102 TRANSISTOR
Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111
Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency
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PTFA220041M
PTFA220041M
c102 TRANSISTOR
tl113
c103 TRANSISTOR
TRANSISTOR c104
NFM18PS105R0J3
c103 TRANSISTOR equivalent
c104 TRANSISTOR
TL108
tl111
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c102 TRANSISTOR
Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200
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PTFA220081M
PTFA220081M
PG-SON-10
c102 TRANSISTOR
c103 TRANSISTOR
c106 TRANSISTOR
TRANSISTOR c105
TRANSISTOR c104
c103 m TRANSISTOR
p 4712
NFM18PS105R0J3
c105 TRANSISTOR
tl113
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C801
Abstract: 1/db3 c801
Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS
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PTFA220121M
PTFA220121M
12-watt
PG-SON-10
C801
1/db3 c801
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c102 TRANSISTOR
Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency
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PTFA220041M
PTFA220041M
PG-SON-10
c102 TRANSISTOR
LM7805 M SMD
R804
c103 TRANSISTOR
transistor c107 m
TRANSISTOR c801
NFM18PS105R0J3
TRANSISTOR c104
TL217
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TRANSISTOR C802
Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS
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PTFA220121M
PTFA220121M
12-watt
PG-SON-10
TRANSISTOR C802
LM7805 c SMD
V4 MARKING
p 4712
transistor c803
atc100a200jw
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TL205
Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's
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PTFC260202FC
PTFC260202FC
10-watt
H-37248-4
TL205
TL2322
RO4350
tl233
tl241
587-1818-2-ND
c201
017 C202
tl147
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Untitled
Abstract: No abstract text available
Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular ampliier applications in the 2300 to 2700 MHz frequency band. Manufactured with Inineon's
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PTFC260202FC
PTFC260202FC
10-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's
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PTFC260202FC
PTFC260202FC
10-watt
H-37248-4
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Untitled
Abstract: No abstract text available
Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET specifically designed for use in Doherty cellular power amplifier applications in the 1805
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PTFB182557SH
PTFB182557SH
250-watt
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TL107 linear
Abstract: TRANSISTOR tl131
Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805
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PTFB182557SH
PTFB182557SH
250-watt
H-34288G-4/2
TL107 linear
TRANSISTOR tl131
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TRANSISTOR tl131
Abstract: C805 capacitor C207 capacitor ATC200B103MW LM78L05ACM-ND TL131 LM78L05ACMND TL228 capacitor 471 c103 TRANSISTOR
Text: PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.
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PTFA091203EL
PTFA091203EL
120-watt,
H-33288-4/2
TRANSISTOR tl131
C805 capacitor
C207 capacitor
ATC200B103MW
LM78L05ACM-ND
TL131
LM78L05ACMND
TL228
capacitor 471
c103 TRANSISTOR
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tl136
Abstract: TRANSISTOR tl131 LM78L05ACM-ND LM78L05ACMND TL127 3882 PTFA091203EL
Text: PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.
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PTFA091203EL
PTFA091203EL
120-watt,
H-33288-6
tl136
TRANSISTOR tl131
LM78L05ACM-ND
LM78L05ACMND
TL127
3882
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Untitled
Abstract: No abstract text available
Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.
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PTFA091503EL
PTFA091503EL
150-watt,
H-33288-6
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LM78L05ACM-ND
Abstract: LM78L05ACMND C210 TL122
Text: PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band. This device features internal I/O matching and thermally-enhanced
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PTFA091203EL
PTFA091203EL
120-watt,
H-33288-6
LM78L05ACM-ND
LM78L05ACMND
C210
TL122
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Untitled
Abstract: No abstract text available
Text: PTFB210801FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multistandard cellular power ampliier applications in the 2110 to 2170 MHz
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PTFB210801FA
PTFB210801FA
H-37265-2
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TRANSISTOR tl131
Abstract: TL235 TL231 TL137 tl117 TL130 tl134 Tl232 C804 tl127
Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.
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PTFA091503EL
PTFA091503EL
150-watt,
H-33288-6
84MHz
TRANSISTOR tl131
TL235
TL231
TL137
tl117
TL130
tl134
Tl232
C804
tl127
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PCC104bct-nd
Abstract: No abstract text available
Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.
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PTFA091503EL
PTFA091503EL
150-watt,
H-33288-6
84MHz
PCC104bct-nd
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