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    C05S Search Results

    C05S Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    54AC05/SDA-R Rochester Electronics LLC 54AC05 - Hex Inverter, With Open-Drain Outputs - Dual marked (5962R9059001SDA) Visit Rochester Electronics LLC Buy
    SF Impression Pixel

    C05S Price and Stock

    Diodes Incorporated 74HC05S14-13

    IC INVERTER 6CH 1-INP 14SO
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    DigiKey 74HC05S14-13 Cut Tape 2,500 1
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    74HC05S14-13 Digi-Reel 2,500 1
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    • 1000 $0.15239
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    74HC05S14-13 Reel 2,500 2,500
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    74HC05S14-13 Cut Tape 57 1
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    Avnet Americas 74HC05S14-13 Reel 8 Weeks 2,500
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    RS 74HC05S14-13 Bulk 25
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    TME 74HC05S14-13 5
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    • 10000 $0.074
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    Avnet Silica 74HC05S14-13 2,500 10 Weeks 2,500
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    Anytek Technology Corporation Ltd AM4C05SCLD02400G

    RELAY GEN PURPOSE 4PDT 5A 24V
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    DigiKey AM4C05SCLD02400G Box 985 1
    • 1 $5.42
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    Interstate Connecting Components AM4C05SCLD02400G
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    Sullins Connector Solutions PBC05SFAN

    CONN HEADER VERT 5POS 2.54MM
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    DigiKey PBC05SFAN Bulk 980 1
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    Anytek Technology Corporation Ltd AM2C05SCLD02400G

    RELAY GEN PURPOSE DPDT 5A 24V
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    DigiKey AM2C05SCLD02400G Box 950 1
    • 1 $4.9
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    • 100 $3.7425
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    TME AM2C05SCLD02400G 1
    • 1 $4.91
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    Interstate Connecting Components AM2C05SCLD02400G
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    Adam Technologies Inc PCB-C-05-SA-20

    CONN FFC FPC 5POS 1MM R/A
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    DigiKey PCB-C-05-SA-20 Tube 933 1
    • 1 $0.18
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    RS PCB-C-05-SA-20 Bulk 12 Weeks 5,016
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    Find more C05S price and stock on Findchips.com

    C05S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode in58

    Abstract: OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908
    Text: Interface Technology and Switching Devices 2013 / 2014 7 PCB connection technology and electronics housing • PCB terminal blocks and plug-in connectors • Electronics housing Connection technology for field devices • Plug-in connectors • Cables and connectors


    Original     		PDF unitB-FLK50/0 VIP-CAB-FLK50/0 VIP-CAB-FLK50/FR/OE/0 diode in58 OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908

    C02S

    Abstract: c28s
    Text: 8 7 4 5 6 1 2 3 REVISIONS PART NUMBER CODING P _ C _ _ S_ _N REV. ECO. NO DESCRIPTION DATE BY A 861 INITIAL RELEASE 12/14/2005 HT B 1143 ADD ALL TERMINATION TYPES 9/14/2006 MV F F TERMINATION TYPE TERMINATION TYPE NUMBER OF POSITIONS PER ROW HEAD DIMENSION


    Original     		PDF C10640 Drawings\C10640, C02S c28s

    ADI1364

    Abstract: No abstract text available
    Text: — d! MOTOROLA - % Order this data sheet by VNIOLM/D SEMICONDUCTOR TECHNICAL DATA a Advance v~loLM /formation Small-Signal L Field Effect . . . are designed for high voltage, high speed switching applications such as line drivers, relay drivers. CMOS logic, microprocessor or TTL-to-high voltage inlterface and


    Original     		PDF MK145BP, ADI1364

    C02S

    Abstract: c28s c14s C04S C33S
    Text: 8 7 4 5 6 1 2 3 P _ C _ _ S_ _N REVISIONS TERMINATION TYPE F NUMBER OF POSITIONS PER ROW TERMINATION CODE BA BB BC BD BE BF BG LEAD FREE GA GB GC GD D DA .140 3.56 B A .050 1.27 A B .140 3.56 HEAD DIMENSION .100 2.54 A .100 2.54 TYP. P _C _ _S _ _ N FITS RIGHT ANGLE BEND


    Original     		PDF C10907 Drawings\C10907, C02S c28s c14s C04S C33S

    TRACTION MOTOR GE 763

    Abstract: TRACTION MOTOR GE 764 SA01-FE-3092-3 FLOW ELEMENT PDE2669TCUK 3EV290V20 VGd15 parker Bus Bar torque value table for metric bolts
    Text: aerospace climate control electromechanical filtration fluid & gas handling hydraulics pneumatics process control sealing & shielding Parker Pneumatic A complete range of pneumatic system components Catalogue PDE2600PNUK March 2014 PDE2600PNUK Parker Pneumatic


    Original     		PDF PDE2600PNUK application987 PDE2600PNUK TRACTION MOTOR GE 763 TRACTION MOTOR GE 764 SA01-FE-3092-3 FLOW ELEMENT PDE2669TCUK 3EV290V20 VGd15 parker Bus Bar torque value table for metric bolts

    Untitled

    Abstract: No abstract text available
    Text: t InNET TECH N O LO G IES T0466S Electrical REV. X E L E C T R IC A L S P E C IF IC A T IO N S TURNS RATIO: (TD+)—(TD—) : (TX +)-C TX -) 1 : 1 ± 3% (RD +)—(RD—) : (RX+)—(RX—) 1 : 1 ± 3% INDUCTANCE: (TD+)—(TD—) 350uH MIN. O 0.1V, 100KHz,


    OCR Scan     		PDF 10OKHz 100MHz 30MHz 60MHz 80MHz 100MHz --18dB

    Untitled

    Abstract: No abstract text available
    Text: Æ iitron 3 3 0 1 E L E C T R O N IC S W A Y . TEL: 407 848-4311 PRODUCT DEVICES.INC. W E S T P A LM B E A C H , F L O R I D A 3 3 4 0 7 FAX: (407) 8 6 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS PET 100V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 1 t . ( 1 )


    OCR Scan     		PDF 300iiS,

    PHP36

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications, Switched Mode Power Supplies SMPS ,


    OCR Scan     		PDF PHP36N06E T0220AB PHP36

    ufnf320

    Abstract: No abstract text available
    Text: POWER MOSFET TRANSISTORS 400 Volt, 1.8 O hm FEATURES UFNF322 UFNF323 DESCRIPTION • Fast Switching • Low Drive Current The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.


    OCR Scan     		PDF UFNF322 UFNF323 Par40 UFNF320 UFNF321

    bu 517

    Abstract: NDS352P
    Text: March 1996 N ational Semiconductor" NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS352P b50113D 003T74G bSD113D bSD113D 317H2 bu 517 NDS352P

    MPT100

    Abstract: No abstract text available
    Text: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: t InNET TECHNOLOGIES T0468S Electrical REV. X E L E C T R IC A L S P E C IF IC A T IO N S TURNS RATIO: (TXIN+)—(CTIN)—(TXIN—) : (TXO+)-(CTO)-CTXO-) 1.25CT : 1CT ± 3% (RXO+)—(RXO—) : (RXIN+)—(RXIN—) 1 : 1 ± 3% R X 1+<D_i^rH|if— INDUCTANCE:


    OCR Scan     		PDF 30KHz 125MHz 10OKHz 10MHz 30MHz 60MHz 80MHz T0468S 350uH 100KHz,

    BUK456

    Abstract: BUK456-60A BUK456-60B T0220AB BUK456-80A
    Text: PHILIPS INTERNATIONAL bSE D B 711062b OObMlDb 2Ô7 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711062b D0b41Db BUK456-60A/B T0220AB BUK456 7110fi2b DDb411D BUK456-80A/B BUK456-60A BUK456-60B BUK456-80A

    74AC05

    Abstract: 74AC05SC AC05 M14A
    Text: A I R C H I L D Revised D ecem ber 1999 S E M I C O N D U C T O R TM 74AC05 Hex Inverter with Open Drain Outputs General Description Features The A C 05 contains six inverters. • O utputs sink 24 mA ■ O pen drain fo r w ired NO R function ■ R adiation tolerant FACT process


    OCR Scan     		PDF 74AC05 74AC05SC 14-Lead MS-012, 74AC05 AC05 M14A

    vectron C0-257B27

    Abstract: vectron co-257 CO-257 CO-566 co257 vectron 257 C0-257f CO-08 C0-253B57 C0-257B57
    Text: TCXOs to 140 MHz Model CO-257 uses surface mount construction on a printed circuit board housed in a solder sealed FEATURES: • metal can. This model includes discrete thermistors Miniature Highperformance Series and resistors in the temperature compensation


    OCR Scan     		PDF CO-257 CO-557 CO-08. CO-511 1390ij0, vectron C0-257B27 vectron co-257 CO-566 co257 vectron 257 C0-257f CO-08 C0-253B57 C0-257B57

    Untitled

    Abstract: No abstract text available
    Text: HE D I 4Ö 554 5 2 ÛQQflSS2 1 | INTERNATIONAL Data Sheet No. PD-9.324N RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF820 IRFSS1 IRFS22 IRF823 N-CHANNEL 500 Volt, 3.0 Ohm HEXFET TO-220AB Plastic Package


    OCR Scan     		PDF IRF820 IRFS22 IRF823 O-220AB C-307 IRF820, IRF821, IRF822, IRF823 C-308

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs IRFY240 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) P A R A M E T E R S / T E ST C O N D IT IO N S


    OCR Scan     		PDF IRFY240

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs iZiA Q T NSG2649 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) P A R A M E T E R S / T E ST C O N D IT IO N S


    OCR Scan     		PDF NSG2649

    BUK637-500B

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL fc.SE D B 7110fl2fc, DDfci43Dfci OMR • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode


    OCR Scan     		PDF 711002b D0b43Db BUK637-500B BUK637-500B

    Untitled

    Abstract: No abstract text available
    Text: CATALOG MI CRO SWI T CH 2EX1 S W IT C H -E N C L O S E D » !iV.- CK Of MlOHdHtllVHOKTWÎll HGULTOR CQWHT j j j j j j j L IS T IN G FEO. MF R. CODE 91929 MTS. HOLE FOR .280 DIA. FLAT HEAD SCREW.- 4 HOLE FOR *10 FLAT SCREW. 6.0 - ± .0 1 0 .2 6 5 -


    OCR Scan     		PDF

    k554

    Abstract: kiv 499 BUK554-200A BUK554-200B
    Text: PHILIPS INTERNATIONAL bSE D m 7110fl2h D0b423b TTS « P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF BUK554-200A/B -T0220AB ID/100 k554 kiv 499 BUK554-200A BUK554-200B

    B4t diode surface mount

    Abstract: C05S 702 TRANSISTOR sot-23 S-108 NDS331N supersot-3
    Text: J u ly 1 9 9 6 N ational < ß Semiconductor" NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode po w e r fie ld effect tran sisto rs are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS331N bS0113G B4t diode surface mount C05S 702 TRANSISTOR sot-23 S-108 NDS331N supersot-3

    Untitled

    Abstract: No abstract text available
    Text: OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 FOUR UNCOMMITTED POWER MOSFETS IN ISOLATED LOW PROFILE PLASTIC PACKAGE Four Uncommitted 100V To 1000V, Up To 30A N-Channel Power MOSFETs In One Package FEATURES • • • • • • Isolated High Density Package High Current


    OCR Scan     		PDF OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 energ025 300/isec,

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC M O S FIELD EFFECT TRANSISTOR 2SJ199 P-CHANNEL MOS FET FOR SW ITCHING The 2SJ199, P-channel vertical ty p e MOS FE T, is a sw itching device w h ich can be driven d ire c tly by th e o u tp u t o f ICs having a 5 V pow er source. As the M OS F E T has lo w on-state resistance and excellen t s w itc h ­


    OCR Scan     		PDF 2SJ199 2SJ199, K1485 WS60-00