Untitled
Abstract: No abstract text available
Text: APTGF300U120DG Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 300A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK Features Non Punch Through NPT FAST IGBT - Low voltage drop - Low tail current
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APTGF300U120DG
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Untitled
Abstract: No abstract text available
Text: APTGF200U120DG Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 200A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK Features Non Punch Through NPT FAST IGBT - Low voltage drop - Low tail current
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APTGF200U120DG
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Untitled
Abstract: No abstract text available
Text: APTGF300U120DG Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 300A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK E Features • Non Punch Through NPT FAST IGBT - Low voltage drop - Low tail current
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APTGF300U120DG
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Untitled
Abstract: No abstract text available
Text: APTGF200U120DG Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 200A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK E Features • Non Punch Through NPT FAST IGBT - Low voltage drop - Low tail current
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APTGF200U120DG
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igbt 400V 40A
Abstract: No abstract text available
Text: FGB40N60SM tm 600V, 40A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop 2nd generation IGBTs offer the optimum performance for welding and PFC applications where low conduction
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FGB40N60SM
FGB40N60SM
O-263AB/D2-PAK
igbt 400V 40A
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Untitled
Abstract: No abstract text available
Text: FGAF20N60SMD 600 V, 20 A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ = 175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low
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FGAF20N60SMD
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Untitled
Abstract: No abstract text available
Text: FGAF40N60SMD 600 V, 40 A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ = 175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low
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FGAF40N60SMD
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Untitled
Abstract: No abstract text available
Text: FGA30N65SMD 650 V, 30 A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low
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FGA30N65SMD
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400v 20A ultra fast recovery diode
Abstract: No abstract text available
Text: FGAF20N60SMD 600V, 20A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, Welder and SMPS applications where low conduction and switching losses are essential.
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FGAF20N60SMD
FGAF20N60SMD
400v 20A ultra fast recovery diode
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FGAF40N60SMD
Abstract: smps welder inverter fgaf40n
Text: FGAF40N60SMD 600V, 40A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, Welder and SMPS applications where low conduction and switching losses are essential.
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FGAF40N60SMD
FGAF40N60SMD
smps welder inverter
fgaf40n
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Untitled
Abstract: No abstract text available
Text: FGH60N60SMD 600 V, 60 A Field Stop IGBT Features General Description o • Maximum Junction Temperature: TJ = 175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
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FGH60N60SMD
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din 7985
Abstract: din 6900 push switch 6mm c-series IGBT instructions din 46244 A 100N DIN46244 IGBT AS switch SCREW din 7985 AN2002
Text: APPLICATION NOTE Date:2002-07-09 Page 1 of 6 AN-Number: AN2002-08 Mounting instructions 62mm C-series IGBT - modules half-bridges and single switches 1. Heat sink The mounting surface must be clan and free of particles. Flatness ≤ 25µm on a length of 100 mm
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AN2002-08
53N53N
EN61210
din 7985
din 6900
push switch 6mm
c-series IGBT instructions
din 46244 A
100N
DIN46244
IGBT AS switch
SCREW din 7985
AN2002
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4500a
Abstract: APT0502 APT0601 APTGF300U120DG
Text: APTGF300U120DG Single Switch with Series diodes NPT IGBT Power Module VCES = 1200V IC = 300A @ Tc = 80°C Application • Zero Current Switching resonant mode EK E C G CK Benefits • Outstanding performance at high frequency operation • Stable temperature behavior
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APTGF300U120DG
4500a
APT0502
APT0601
APTGF300U120DG
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Untitled
Abstract: No abstract text available
Text: TRENCHSTOP Series IKA15N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C
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IKA15N60T
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Untitled
Abstract: No abstract text available
Text: APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 VCES = 1200V IC = 475A @ Tc = 100°C EK E C G CK Application • Zero Current Switching resonant mode Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current
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APTGL475U120DAG
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Untitled
Abstract: No abstract text available
Text: APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 EK E C G CK VCES = 1200V IC = 475A @ Tc = 100°C Application • Zero Current Switching resonant mode Features Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current
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APTGL475U120DAG
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APT0502
Abstract: APT0601
Text: APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 VCES = 1200V IC = 475A @ Tc = 100°C EK E C G CK Application • Zero Current Switching resonant mode Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current
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APTGL475U120DAG
APT0502
APT0601
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K15T60
Abstract: IKA15N60T 15A 400 - 600V FAST DIODES
Text: IKA15N60T q TrenchStop Series IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKA15N60T
PG-TO-220-3-31
K15T60
IKA15N60T
15A 400 - 600V FAST DIODES
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Untitled
Abstract: No abstract text available
Text: IKA15N60T q TrenchStop Series IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKA15N60T
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Untitled
Abstract: No abstract text available
Text: IKA15N60T q TrenchStop Series IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Low Loss DuoPack : • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKA15N60T
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k15t60
Abstract: IKA15N60T marking k15t60
Text: IKA15N60T q TrenchStop Series IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKA15N60T
P-TO-220-3-31
O-220
k15t60
IKA15N60T
marking k15t60
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Untitled
Abstract: No abstract text available
Text: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175°C
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IKA10N60T
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k15t60
Abstract: FAST RECOVERY DIODE diode 400V 4A FAST RECOVERY DIODE 200ns 8A 40V marking k15t60 5014-3 DEVICE MARKING CODE 150A fast recovery diode 1a trr 200ns MARKING CODE 150A IKA15N60T
Text: IKA15N60T q TrenchStop Series IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKA15N60T
P-TO-220-3-31
O-220
k15t60
FAST RECOVERY DIODE
diode 400V 4A
FAST RECOVERY DIODE 200ns 8A 40V
marking k15t60
5014-3
DEVICE MARKING CODE 150A
fast recovery diode 1a trr 200ns
MARKING CODE 150A
IKA15N60T
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k10t60
Abstract: 5304 marking code IKA10N60T
Text: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time – 5µs
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IKA10N60T
Oct-04
k10t60
5304 marking code
IKA10N60T
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