k10t60
Abstract: igbt 1000v 10A IKB10N60T PG-TO263-3-2
Text: IKB10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKB10N60T
k10t60
igbt 1000v 10A
IKB10N60T
PG-TO263-3-2
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K10T60
Abstract: IKP10N60T PG-TO-220-3-1 fast recovery diode 1000v 10A
Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKP10N60T
K10T60
IKP10N60T
PG-TO-220-3-1
fast recovery diode 1000v 10A
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IKP10N60T
Abstract: IKP10N60T IGBT k10t60
Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKP10N60T
PG-TO-220-3-1
O-220AB)
IKP10N60T IGBT
k10t60
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k10t60
Abstract: 2.2 k resistor K10T
Text: IKB10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKB10N60T
k10t60
2.2 k resistor
K10T
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k10t60
Abstract: IKP10N60T PG-TO-220-3-1
Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKP10N60T
k10t60
IKP10N60T
PG-TO-220-3-1
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k10t60
Abstract: Q67040S4681 Q67040S4682 30A20V fast recovery diode 1000v 10A IKP10N60T K10T60 IKB10N60T IKP10N60T SWITCHING DIODE 600V 2A Q67040-S4681
Text: IKP10N60T IKB10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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Original
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IKP10N60T
IKB10N60T
P-TO-220-3-1
O-220AB)
Oct-04
k10t60
Q67040S4681
Q67040S4682
30A20V
fast recovery diode 1000v 10A
IKP10N60T K10T60
IKB10N60T
IKP10N60T
SWITCHING DIODE 600V 2A
Q67040-S4681
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PDF
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Untitled
Abstract: No abstract text available
Text: TRENCHSTOP Series IKB10N60T p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
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IKB10N60T
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PDF
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Untitled
Abstract: No abstract text available
Text: IKB10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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Original
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IKB10N60T
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PDF
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Untitled
Abstract: No abstract text available
Text: IKB10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled 3 diode C • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKB10N60T
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k10t60
Abstract: 5304 marking code IKA10N60T
Text: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time – 5µs
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Original
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IKA10N60T
Oct-04
k10t60
5304 marking code
IKA10N60T
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PDF
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k10t60
Abstract: No abstract text available
Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKP10N60T
PG-TO-220-3-1
k10t60
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k10t60
Abstract: diode 10a 400v fast recovery diode 600v 12A IKA10N60T fast recovery diode 1a trr 200ns 10A 600A DC diode IGBT DRIVE 50V 300A diode 400V 4A 600v 75a fast recovery diode 1000v 10A
Text: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175°C • Short circuit withstand time – 5µs
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IKA10N60T
PG-TO-220-3-31
O-220
k10t60
diode 10a 400v
fast recovery diode 600v 12A
IKA10N60T
fast recovery diode 1a trr 200ns
10A 600A DC diode
IGBT DRIVE 50V 300A
diode 400V 4A
600v 75a
fast recovery diode 1000v 10A
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MJ-06
Abstract: Q67040-S4681
Text: IKB10N60T p TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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Original
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IKB10N60T
MJ-06
Q67040-S4681
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PDF
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k10t60
Abstract: No abstract text available
Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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Original
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IKP10N60T
k10t60
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Untitled
Abstract: No abstract text available
Text: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175°C • Short circuit withstand time – 5µs
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Original
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IKA10N60T
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PDF
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Untitled
Abstract: No abstract text available
Text: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time – 5s
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Original
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IKA10N60T
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PDF
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Untitled
Abstract: No abstract text available
Text: IKA10N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
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Original
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IKA10N60T
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PDF
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Untitled
Abstract: No abstract text available
Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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Original
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IKP10N60T
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PDF
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Untitled
Abstract: No abstract text available
Text: TRENCHSTOP Series IKP10N60T p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
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Original
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IKP10N60T
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PDF
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Untitled
Abstract: No abstract text available
Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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Original
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IKP10N60T
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PDF
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Untitled
Abstract: No abstract text available
Text: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175°C
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IKA10N60T
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PDF
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